NTMFS4C032N MOSFET - Power, Single, N-Channel, SO-8 FL 30 V, 38 A Features * * * * Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant Applications www.onsemi.com V(BR)DSS RDS(ON) MAX ID MAX 7.35 mW @ 10 V 30 V 38 A 11.15 mW @ 4.5 V * CPU Power Delivery * DC-DC Converters D (5-8) MAXIMUM RATINGS (TJ = 25C unless otherwise stated) Parameter Symbol Value Unit Drain-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGS 20 V ID 13.0 A Continuous Drain Current RqJA (Note 1) TA = 25C Power Dissipation RqJA (Note 1) TA = 25C PD 2.46 W Continuous Drain Current RqJA 10 s (Note 1) TA = 25C ID 19.1 A Power Dissipation RqJA 10 s (Note 1) TA = 25C Continuous Drain Current RqJA (Note 2) TA = 80C N-CHANNEL MOSFET D 5.32 W 1 TA = 25C ID TA = 80C 7.2 A 5.4 TA = 25C PD 0.75 W Continuous Drain Current RqJC (Note 1) TC = 25C ID 38 A Power Dissipation RqJC (Note 1) TC = 25C PD 21.6 W TA = 25C, tp = 10 ms IDM 106 A TC =80C Current Limited by Package MARKING DIAGRAM 14.3 PD Power Dissipation RqJA (Note 2) Pulsed Drain Current S (1,2,3) 9.7 TA = 80C Steady State G (4) TA = 25C 29 IDmax 70 A TJ, TSTG -55 to +150 C IS 19 A Drain to Source DV/DT dV/dt 7.0 V/ns Single Pulse Drain-to-Source Avalanche Energy (TJ = 25C, VGS = 10 V, IL = 21 Apk, L = 0.1 mH, RGS = 25 W) (Note 3) EAS 22 mJ TL 260 C Operating Junction and Storage Temperature Source Current (Body Diode) Lead Temperature for Soldering Purposes (1/8 from case for 10 s) SO-8 FLAT LEAD CASE 488AA STYLE 1 A Y W ZZ S S S G D 4C032 AYWZZ D D = Assembly Location = Year = Work Week = Lot Traceabililty ORDERING INFORMATION Package Shipping NTMFS4C032NT1G SO-8 FL (Pb-Free) 1500 / Tape & Reel NTMFS4C032NT3G SO-8 FL (Pb-Free) 5000 / Tape & Reel Device For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Surface-mounted on FR4 board using 1 sq-in pad, 1 oz Cu. 2. Surface-mounted on FR4 board using the minimum recommended pad size. (c) Semiconductor Components Industries, LLC, 2016 May,2019 - Rev. 1 1 Publication Order Number: NTMFS4C032N/D NTMFS4C032N 3. This is the absolute maximum rating. Parts are 100% tested at TJ = 25C, VGS = 10 V, IL = 15 Apk, EAS = 11 mJ. THERMAL RESISTANCE MAXIMUM RATINGS Parameter Symbol Value Junction-to-Case (Drain) RqJC 5.8 Junction-to-Ambient - Steady State (Note 4) RqJA 50.8 Junction-to-Ambient - Steady State (Note 5) RqJA 166.6 Junction-to-Ambient - (t 10 s) (Note 4) RqJA 23.5 Unit C/W 4. Surface-mounted on FR4 board using 1 sq-in pad, 1 oz Cu. 5. Surface-mounted on FR4 board using the minimum recommended pad size. ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise specified) Parameter Symbol Test Condition Min Drain-to-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 30 Drain-to-Source Breakdown Voltage (transient) V(BR)DSSt VGS = 0 V, ID(aval) = 6.1 A, Tcase = 25C, ttransient = 100 ns 34 Drain-to-Source Breakdown Voltage Temperature Coefficient V(BR)DSS/ TJ Typ Max Unit OFF CHARACTERISTICS Zero Gate Voltage Drain Current Gate-to-Source Leakage Current IDSS V V 14.9 VGS = 0 V, VDS = 24 V mV/C TJ = 25C 1.0 TJ = 125C 10 IGSS VDS = 0 V, VGS = 20 V VGS(TH) VGS = VDS, ID = 250 mA mA 100 nA 2.1 V ON CHARACTERISTICS (Note 6) Gate Threshold Voltage Negative Threshold Temperature Coefficient Drain-to-Source On Resistance 1.3 VGS(TH)/TJ RDS(on) 4.8 mV/C VGS = 10 V ID = 30 A 6.11 7.35 VGS = 4.5 V ID = 12 A 9.29 11.15 Forward Transconductance gFS VDS = 1.5 V, ID = 15 A Gate Resistance RG TA = 25C 40 0.3 1.0 mW S 2.0 W CHARGES AND CAPACITANCES Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS 770 VGS = 0 V, f = 1 MHz, VDS = 15 V 443 pF 127 Capacitance Ratio CRSS/CISS Total Gate Charge QG(TOT) 7.8 Threshold Gate Charge QG(TH) 1.4 Gate-to-Source Charge QGS Gate-to-Drain Charge QGD 3.7 Gate Plateau Voltage VGP 3.6 V 15.2 nC Total Gate Charge VGS = 0 V, VDS = 15 V, f = 1 MHz VGS = 4.5 V, VDS = 15 V; ID = 30 A QG(TOT) VGS = 10 V, VDS = 15 V; ID = 30 A SWITCHING CHARACTERISTICS (Note 7) 6. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 7. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2 0.165 2.9 nC NTMFS4C032N ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise specified) Parameter Symbol Test Condition Min Typ Max Unit SWITCHING CHARACTERISTICS (Note 7) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time td(ON) tr td(OFF) 9.0 VGS = 4.5 V, VDS = 15 V, ID = 15 A, RG = 3.0 W 35 tf 5.0 td(ON) 6.0 tr td(OFF) VGS = 10 V, VDS = 15 V, ID = 15 A, RG = 3.0 W tf ns 13 26 ns 16 3.0 DRAIN-SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time VSD TJ = 25C 0.82 TJ = 125C 0.69 tRR Charge Time ta Discharge Time tb Reverse Recovery Charge VGS = 0 V, IS = 10 A 1.1 V 23.4 VGS = 0 V, dIS/dt = 100 A/ms, IS = 30 A QRR 12.1 11.3 9.7 6. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 7. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 3 ns nC NTMFS4C032N TYPICAL CHARACTERISTICS 10 V 70 6.5 V TJ = 25C 60 4.2 V 50 4.0 V 3.8 V 40 3.6 V 30 3.4 V 20 3.2 V 10 RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) 0 2.8 V 1 3 2 TJ = 125C 20 TJ = 25C 0 ID = 30 A 0.011 0.010 0.009 0.008 0.007 2.0 2.5 3.0 3.5 4.0 4.0 5.0 6.0 7.0 8.0 9.0 VGS, GATE-TO-SOURCE VOLTAGE (V) 10 4.5 5.0 0.022 0.020 TJ = 25C 0.018 0.016 VGS = 4.5 V 0.014 0.012 0.010 VGS = 10 V 0.008 0.006 10 20 30 40 50 60 70 ID, DRAIN CURRENT (A) Figure 3. On-Resistance vs. VGS Figure 4. On-Resistance vs. Drain Current and Gate Voltage 1.7 10000 VGS = 0 V ID = 30 A VGS = 10 V IDSS, LEAKAGE (nA) RDS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) 1.5 Figure 2. Transfer Characteristics 0.012 1.5 1.0 Figure 1. On-Region Characteristics 0.013 1.6 0.5 TJ = -55C VGS, GATE-TO-SOURCE VOLTAGE (V) 0.014 3.0 30 VDS, DRAIN-TO-SOURCE VOLTAGE (V) 0.015 0.006 40 0 5 4 50 10 3.0 V 0 VDS = 5 V 60 RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) ID, DRAIN CURRENT (A) 4.5 V ID, DRAIN CURRENT (A) 70 1.4 1.3 1.2 1.1 1.0 TJ = 150C 1000 TJ = 125C 100 TJ = 85C 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 150 10 5 10 15 20 25 TJ, JUNCTION TEMPERATURE (C) VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 5. On-Resistance Variation with Temperature Figure 6. Drain-to-Source Leakage Current vs. Voltage www.onsemi.com 4 30 NTMFS4C032N 1000 900 C, CAPACITANCE (pF) VGS = 0 V TJ = 25C Ciss 800 VGS, GATE-TO-SOURCE VOLTAGE (V) TYPICAL CHARACTERISTICS 700 600 Coss 500 400 300 200 Crss 100 0 0 5 10 15 20 25 30 5 Qgd Qgs 4 TJ = 25C VDD = 15 V VGS = 10 V ID = 30 A 3 2 1 0 0 4 2 6 8 10 12 14 16 30 IS, SOURCE CURRENT (A) VGS = 0 V tf td(off) tr 10 td(on) 1 10 25 20 15 TJ = 25C TJ = 125C 10 5 0 100 0.4 0.5 0.6 0.7 0.8 0.9 1.0 RG, GATE RESISTANCE (W) VSD, SOURCE-TO-DRAIN VOLTAGE (V) Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current 10 ms 100 ms 10 1 ms 10 ms 1 0 V < VGS < 10 V Single Pulse TC = 25C RDS(on) Limit Thermal Limit Package Limit 0.01 0.1 dc 1 10 EAS, SINGLE PULSE DRAIN-TO- SOURCE AVALANCHE ENERGY (mJ) t, TIME (ns) 6 Figure 8. Gate-to-Source and Drain-to-Source Voltage vs. Total Charge 100 ID, DRAIN CURRENT (A) 7 Figure 7. Capacitance Variation 100 0.01 9 8 Qg, TOTAL GATE CHARGE (nC) VDD = 15 V ID = 15 A VGS = 10 V 0.1 QT 10 VDS, DRAIN-TO-SOURCE VOLTAGE (V) 1000 1 11 100 12 ID = 15 A 10 8 6 4 2 0 25 50 75 100 125 VDS, DRAIN-TO-SOURCE VOLTAGE (V) TJ, STARTING JUNCTION TEMPERATURE (C) Figure 11. Maximum Rated Forward Biased Safe Operating Area Figure 12. Maximum Avalanche Energy vs. Starting Junction Temperature www.onsemi.com 5 150 NTMFS4C032N TYPICAL CHARACTERISTICS 100 R(t) (C/W) Duty Cycle = 50% 10 20% 10% 5% 1 2% 1% 0.1 Single Pulse 0.01 0.000001 0.00001 0.0001 0.001 0.1 0.01 1 10 100 1000 PULSE TIME (sec) Figure 13. Thermal Response 100 50 45 ID, DRAIN CURRENT (A) 40 GFS (S) 35 30 25 20 15 10 TA = 85C 10 TA = 25C 5 0 0 10 20 30 40 50 60 1 1.E-08 70 1.E-07 1.E-06 1.E-05 1.E-04 1.E-03 ID (A) PULSE WIDTH (SECONDS) Figure 14. GFS vs. ID Figure 15. Avalanche Characteristics www.onsemi.com 6 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS DFN5 5x6, 1.27P (SO-8FL) CASE 488AA ISSUE N 1 DATE 25 JUN 2018 SCALE 2:1 2X NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH PROTRUSIONS OR GATE BURRS. 0.20 C D A 2 B D1 2X 0.20 C 4X E1 2 q E c 1 2 3 A1 4 TOP VIEW C DETAIL A 0.10 C SEATING PLANE A 0.10 C SIDE VIEW MILLIMETERS MIN NOM MAX 0.90 1.00 1.10 0.00 --- 0.05 0.33 0.41 0.51 0.23 0.28 0.33 5.00 5.15 5.30 4.70 4.90 5.10 3.80 4.00 4.20 6.00 6.30 6.15 5.70 5.90 6.10 3.45 3.65 3.85 1.27 BSC 0.51 0.575 0.71 1.20 1.35 1.50 0.51 0.575 0.71 0.125 REF 3.00 3.40 3.80 0_ --- 12 _ DIM A A1 b c D D1 D2 E E1 E2 e G K L L1 M q GENERIC MARKING DIAGRAM* DETAIL A 1 0.10 b C A B 0.05 c 8X XXXXXX AYWZZ e/2 e L 1 4 K RECOMMENDED SOLDERING FOOTPRINT* E2 PIN 5 (EXPOSED PAD) L1 M 2X 0.495 4.560 2X 1.530 G D2 2X BOTTOM VIEW XXXXXX = Specific Device Code A = Assembly Location Y = Year W = Work Week ZZ = Lot Traceability *This information is generic. Please refer to device data sheet for actual part marking. Pb-Free indicator, "G" or microdot " G", may or may not be present. Some products may not follow the Generic Marking. 0.475 3.200 4.530 STYLE 1: PIN 1. SOURCE 2. SOURCE 3. SOURCE 4. GATE 5. DRAIN 1.330 STYLE 2: 2X PIN 1. ANODE 0.905 2. ANODE 3. ANODE 4. NO CONNECT 0.965 5. CATHODE 1 4X 1.000 4X 0.750 1.270 PITCH DIMENSIONS: MILLIMETERS *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DOCUMENT NUMBER: DESCRIPTION: 98AON14036D DFN5 5x6, 1.27P (SO-8FL) Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped "CONTROLLED COPY" in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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