Aaiitron ruse _ PRODUCT CATALOG a 1) N=CHANNEL. ENHANCEMENT MOS FET ABSOLUTE MAX IMUM RATINGS 5O0V SA O 85 QD PARAMETER SYMBOL. UNITS . | SDF440_ JAA Drain-source Volt.(1) VDSS 500 Vde Drain-Gate Vo! tage VDGR 500 Vd SDF 440 JAB (Res=1.0Mo) (1) SDF440 JDA Bate- Source Voltage VGS +20 Vde - Bees Continuous FEATURES (Tc = 35C) iD 8.0 Ade SEE Drain Current Pulsed(3) iOM. . 32 A |@ RUGGED PACKAGE Total Power Dissipation PD 100 W @ HI-REL CONSTRUCTION Power Dissipation Wee @ CERAMIC EYELETS ~ | Derating > 25C 0.83 -}@ LEAD BENDING OPTIONS Operating & Storage Temp. | Tu/Tsig -55 TO +150 C @ COPPER CORED 52 ALLOY PINS Thermal Resistance RthJc 1.2 C/W @ LOW IR LOSSES Max.Lead temperature TL 300 c @ LOW THERMAL RESISTANCE @ OPTIONAL MIL-S-19500 ELECTRICAL CHARACTERISTICS Te=a25c (HIGESS.BEHERE, SCREENING PARAMETER _|SYMBOL| TEST CONDITIONS MIN J TYP..| MAX JUNITS CHEM ATIC | Drain-sour VGS=0V , Breokdawn, Vel t {YCBRI0SS| | 5c A S00] - | - | V TERMINAL CONNECTIONS Gote Threshold G H VGS(TH = = 2. - . a Voltage __ (TH)}VDS=VGS 1D=250 HA 0 4.0| V Toaz TORAIN Leakage IGSS_|VGS=#20 V - | = [100] nA 2| DRAIN | 2| SOURCE Zero Gate VDS=MAX.RATING VGS=0| - | - [250] HA 3} SOURCE | 3] GATE oltage Drain | IDSS |yps=09.8 MAX.RATING STANDARD BEND Current VGS=0.- TU=125C ~ | [O00] BA CONFIGURATIONS JAA Static Drain- , 7 VGS=10 V Source On Gtgte RDS(ON)| | 524. 4A - | - j0.85) O JDA F d Trans- Conductance (2)| OFS | \psq4.4n ~ 4.3] - | - [S() Input Capacitance] CISS ~_ {1300} .- pF neu Output Capacitance} COSS GS=OV OSes v - {180] - pF S Feyeetfonesrerer| crss |! = [45 [= [oF Turn-On Delay |td(on)|/yop=250v RG=9.19 - | - | 21 [ns Rise Time tr -|10=8.0A RD=300 - | - [35] ns Turn-Off Delayltd(off)| sre cssentiaity indenee- |= [= 174 [ns Fall Time if dent of operating temp.) [_ 30 | ns Total Gate Charge D (Gate-Source Plus} Qg - - 63 | nc , sae SLE Oh et ! Gate-S =Q. . ] Charge Qgs (Gate, charge. is essenti- - | - 19.3] nc (CUSTOM BEND OPTIONS AVAILABLE) Gate-Drain ally indep . STANDARD BEND "Miller Qad operating temperature) _ _ 32 | nc CyMi ler ) g CONF IGURAT IONS JAB SOURCE-DRAIN DIODE RATINGS & CHARACT.Tc = 25C (HILESS OTHER PARAMETER SYMBOL. TEST CONDITIONS MIN.| TYP.|MAX .JUNITS Continuous wpe . Modified MOSFET Source Current] IS ; -|- | 8] A Fi symbol showing the (Body Diode) integral reverse Pulse Source P-N junction recti- Current (Body ISM |fier (See schematic)} ~ | - |.32] A Diode) (1) Diode Forward {F=8.0A, VGS=OV _ _ Voltage (2) VSD [tc=+25C 2.0) V Reverse pe OHO _ _ Recovery Time trr Te=+25 C 970i ns Reverse Re- Fg OA covery Charge | @rr |di/dt=100A/ nS 7 [4-2] > | He (CUSTOM BEND OPTIONS AVAILABLE) 1 = 25C to 150C. REV. 10/93 2 pilee test: Pulse Width <300uS, Duty Cycle <2%. 3) Repetitive Rating: Pulse Width limited By Mox.junction Temperature. ; A25