blue binder, tab 4 Philips Components PowerMOS transistor BUK456-800A BUK456-800B GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL | PARAMETER MAX. MAX. UNIT field-effect power transistor in a plastic envelope. BUK456 | -800A | -800B The device is intended for use in Vos Drain-source voltage 800 800 Vv Switched Mode Power Supplies | Drain current (DC) 4 3.5 A (SMPS), motor control, welding, Pra Total power dissipation 125 125 Ww Dc/DC and AC/DC converters, Rosion) Drain-source on-state resistance 3 4 Q and in general purpose switching applications. MECHANICAL DATA Dimensions in mm 45 max Net Mass: 2g 10,3 > ~~ 1.3> ry Pinning: as qo 5 5,9 1 = Gate | min 2 = Drain } 15,8 ! max 3 = Source r { 3,5 max 51 not tint d n m= 13,5 >| min 1,3 max _l4 (2x) 0,9 max (3x) le 06 2,54 2,54 rt 2,4 9 s Fig.1 TO220AB; drain connected to mounting base. Notes 1. Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent damage to MOS gate oxide. 2. Accessories supplied on request: refer to Mounting instructions for T0220 envelopes. January 1989 PHILIPSPowerMOS transistor BUK456-800A BUK456-800B RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL | PARAMETER CONDITIONS MIN. MAX. UNIT Vos Drain-source voltage - - 800 Vv Voca Drain-gate voltage Res = 20 kQ - 800 Vv +Vos Gate-source voltage - - 30 v -800A -800B Ib Drain current (DC) Tre = 25C - 4.0 3.5 A lp Drain current (DC) Tm = 100 C - 2.5 2.2 A low Drain current (pulse peak value) [T,. = 25 C . 16 14 A P, Total power dissipation Try = 25 C : 125 WwW Too Storage temperature - - 55 150 C T Junction Temperature - : 150 Cc THERMAL RESISTANCES From junction to mounting base Rs ime = 1.0 KW From junction to ambient Rina = 60 K/W STATIC CHARACTERISTICS Two = 25 C unless otherwise specitied SYMBOL | PARAMETER CONDITIONS MIN, | TYP. | MAX. | UNIT Viaryss Drain-source breakdown Ves = 0 V3 Ip = 0.25 MA 800 - - Vv voltage Vasito) Gate threshold voltage Vos = Vas: | 2.1 3.0 4.0 Vv loss Zero gate voltage drain current | Vos = 800 Vee = 74 V; 7, =25C - 2 20 pA loss Zero gate voltage drain current | Vps = 800 V; Vee =0V; 7, =125 C : 0.1 1.0 mA 5 Gate source leakage current yes =+30V =0V - 10 100 nA DS(ON) Drain-source on-state yes =10V; BUK456-800A|_- 2.7 3.0 Q resistance =i5A BUK456-800B - 3.5 4.0 Q DYNAMIC CHARACTERISTICS Tw = 25 C unless otherwise specified SYMBOL | PARAMETER CONDITIONS MIN. | TYP. | MAX. | UNIT Os Forward transconductance Vos = 25. V3 1p =1.5A 3.0 43 - Ss Cis Input capacitance Veg = 0 Vi Vos = 25 Vi f = 1 MHz - 1000 | 1250] pF Cons Output capacitance - 80 120 pF Crs Feedback capacitance - 30 50 pF te on Tum-on delay time Vop = 30 V; Ip = 2.3 A; - 10 25 ns t Turn-on rise time Veg = 10 V; Res = 50 Q; : 25 40 ns ts off Tum-oft delay time Reon = 50 Qa - 130 150 ns t Tum-off fall time : 40 60 ns i Internal drain inductance Measured from contact screw on - 3.5 - nH tab to centre of die Ly Internal drain inductance Measured from drain lead 6 mm : 45 - nH from package to centre of die u Internal source inductance Measured from source lead 6 mm : 75 - nH from package to source bond pad December 1988 Philips ComponentsPowerMOS transistor BUK456-800A BUK456-800B REVERSE DIODE RATINGS AND CHARACTERISTICS Tr = 25 C unless otherwise specified SYMBOL | PARAMETER CONDITIONS MIN. | TYP. | MAX. | UNIT for Continuous reverse drain . . - 4.0 A current loam Pulsed reverse drain current - - - 16 A SD Diode forward voliage Ip =4.0A; Veg =0V - 1.0 1.3 Vv t Reverse recovery time I; = 4.0 A; -di-/dt = 100 A/us; - 1800 - ns a, Reverse recovery charge Ves = 0 V; V_a = 100 V - 12 : pwc 0 2 4 60 80, 100 1200 140 Tmb/ C Fig.2. Normalised power dissipation. PD% = 100-Pp/Pp a5 c= f(T nt) 0.1 10 100 1000 VDS/V Fig.4. Safe operating area. T,. = 25 C Ip & low = f(Vos); low Single pulse; parameter t Normalised Current Derating 2th j-mb/ (KW) 120 0 = 110 100 90 80 70 60 50 4 30 20 | 10 o 0.001 Qo ao w 60 &, 100 120 140 Tmb/ C t/s Fig.3. Normalised continuous drain current. Fig.5. Transient thermal impedance. ID% = 100-Ip/Ip 25 - = f(T); CONItIONS: Veg > 10 V 2 jme = f(t); parameter D = t/T December 1988 Philips ComponentsPowerMOS transistor BUK456-800A BUK456-800B ID/A oO 4 8 12 16 20 24 28 VDS/V lp = {Vos}; parameter Veg Fig.6.' Typical output characteristics, T; = 25 C. o 2 4 8 ID/A Fig.9. Typical transconductance, T, = 25 C. Qn = f(b); Conditions: Vos = SV RDS(ON) / Ohm 10 0 2 4 IOfA Fig.7. Typical on-state resistance, T, = 25 C. __ Fosow = (lo); parameter Vas Normalised 60 40 -20 0 4 40, & 80 100 120 140 Wee Fig.10. Normalised drain-source on-state resistance. @ = Roswon/Rosyonjas c= f(T); Ip = 1.5 A; Vas = 10V D/A 8 Qo 2 4 6 8 10 VGS/V Fig.8. Typical transfer characteristics. Ip = (Vas) ; Conditions: Vos = 25 V; parameter T, 60 0 20 0 20 6, 8% 8 100 120 140 Wee Fig.11. Gate threshold voltage. Vesiro) = (Tj); Conditions: Ip = 1 MA; Vos = Ves December 1988 Philips Components, PowerMOS transistor BUK456-800A BUK456-800B ID/A SUB-THRESHOLD CONDUCTION 1E0t VGS/V Fig.12. Sub-threshold drain current. Ip = f(Vasy Conditions: T, = 25 C; Vos = Vas 0 0 VSDS/V Fig.15. Typical reverse diode current. I. = f(Vsps); CONAILIONS: Vag = O V; parameter T, a 20 40 vDs/V Fig.13. Typical capacitances, Ciss, Coss, Cras- = (Vos); Conditions: Vag = 0 V; f = 1 MHz 12 VGS/V o 20 40 OG /ne a); conditions: Ip = 4 A; parameter Vp, Fig.14. Ty ypical turn-on gate-charge characteristics. Ves = (6 December 1988 M89-1165/RC Philips Components