*RoHS Directive 2002/95/EC Jan 27 2003 including Annex
JANUARY 1999 - REVISED JANUARY 2007
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP3xxxH3SL Overvoltage Protector Series
TISP3070H3SL THRU TISP3115H3SL,
TISP3125H3SL THRU TISP3210H3SL,
TISP3250H3SL THRU TISP3350H3SL
DUAL BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
TISP3xxxH3SL Overview
This TISP®device series protects central office, access and customer premise equipment against overvoltages on the telecom line. The
TISP3xxxH3SL protects R-G and T-G. In addition, the device is rated for simultaneous R-G and T-G impulse conditions. The
TISP3xxxH3SL is available in a wide range of voltages and has a high current capability, allowing minimal series resistance to be used.
These protectors have been specified mindful of the following standards and recommendations: GR-1089-CORE, FCC Part 68, UL1950,
EN 60950, IEC 60950, ITU-T K.20, K.21 and K.45. The TISP3350H3SL meets the FCC Part 68 “B” ringer voltage requirement and sur-
vives both Type A and B impulse tests. These devices are housed in a through-hole 3-pin single-in-line (SL) plastic package.
Summary Electrical Characteristics
Summary Current Ratings
Part # VDRM
V
V(BO)
V
VT @ IT
V
IDRM
µA
I(BO)
mA
IT
A
IH
mA
Co @ -2 V
pF
Functionally
Replaces
TISP3070H3 58 70 3 5 600 5 150 140 P1402AC†
TISP3080H3 65 80 3 5 600 5 150 140 P1602AC†
TISP3095H3 75 95 3 5 600 5 150 140
TISP3115H3 90 115 3 5 600 5 150 74 P2202AC†
TISP3125H3 100 125 3 5 600 5 150 74
TISP3135H3 110 135 3 5 600 5 150 74
TISP3145H3 120 145 3 5 600 5 150 74 P2702AC†
TISP3180H3 145 180 3 5 600 5 150 74 P3002AC
TISP3210H3 160 210 3 5 600 5 150 74 P3602AC†
TISP3250H3 190 250 3 5 600 5 150 62 P4202AC
TISP3290H3 220 290 3 5 600 5 150 62 P4802AC†
TISP3350H3 275 350 3 5 600 5 150 62 P6002AC
† Bourns part has an improved protection voltage
Parameter ITSP
A
ITSM
A
di/dt
A/µs
Waveshape 2/10 1.2/50, 8/20 10/160 5/320 10/560 10/1000 1 cycle 60 Hz 2/10 Wavefront
Value 500 300 250 200 130 100 60 400
*RoHS COMPLIANT
JANUARY 1999 - REVISED JANUARY 2007
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP3xxxH3SL Overvoltage Protector Series
Description
The TISP3xxxH3SL limits overvoltages between the telephone line Ring and Tip conductors and Ground. Overvoltages are normally
caused by a.c. power system or lightning flash disturbances which are induced or conducted on to the telephone line.
The protector consists of two symmetrical voltage-triggered bidirectional thyristors. Overvoltages are initially clipped by breakdown
clamping until the voltage rises to the breakover level, which causes the device to crowbar into a low-voltage on state. This low-voltage
on state causes the current resulting from the overvoltage to be safely diverted through the device. The high crowbar holding current
prevents d.c. latchup as the diverted current subsides.
How To Order
This TISP3xxxH3SL range consists of twelve voltage variants to meet various maximum system voltage levels (58 V to 275 V). They are
guaranteed to voltage limit and withstand the listed international lightning surges in both polarities. These high current protection devices
are in a 3-pin single-in-line (SL) plastic package and are supplied in tube pack. For alternative impulse rating, voltage and holding cur-
rent values in SL packaged protectors, consult the factory. For lower rated impulse currents in the SL package, the 35 A 10/1000
TISP3xxxF3SL series is available. These monolithic protection devices are fabricated in ion-implanted planar structures to ensure pre-
cise and matched breakover control and are virtually transparent to the system in normal operation.
ITU-T K.20/21 Rating . . . . . . . . 8 kV 10/700, 200 A 5/310
Ion-Implanted Breakdown Region
Precise and Stable Voltage
Low Voltage Overshoot under Surge
Rated for International Surge Wave Shapes
- Single and Simultaneous Impulses
SL Package (Top View)
Device Symbol
3-Pin Through-Hole Packaging
- Compatible with TO-220AB pin-out
- Low Height..............................................................8.3 mm
Low Differential Capacitance..................................< 67 pF
1
2
3
T
G
R
MDXXAGA
G
TR
SD3XAA
Terminals T, R and G correspond to the
alternative line designators of A, B and C
Device VDRM
V
V(BO)
V
‘3070 58 70
‘3080 65 80
‘3095 75 95
‘3115 90 115
‘3125 100 125
‘3135 110 135
‘3145 120 145
‘3180 145 180
‘3210 160 210
‘3250 190 250
‘3290 220 290
‘3350 275 350
Waveshape Standard ITSP
A
2/10 µs GR-1089-CORE 500
8/20 µs IEC 61000-4-5 300
10/160 µs FCC Part 68 250
10/700 µsFCC Part 68
ITU-T K.20/21 200
10/560 µs FCC Part 68 160
10/1000 µs GR-1089-CORE 100
Device Package Carrier
TISP3xxxH3 SL (Single-in-Line) Tube TISP3xxxH3SL-S
Insert xxx value corresponding to protection voltages of 070, 080, 095, 115 etc.
Order As
.......................................UL Recognized Component
JANUARY 1999 - REVISED JANUARY 2007
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
Rating Symbol Value Unit
Repetitive peak off-state voltage, (see Note 1)
‘3070
‘3080
‘3095
‘3115
‘3125
‘3135
‘3145
‘3180
‘3210
‘3250
‘3290
‘3350
VDRM
± 58
± 65
± 75
±90
±100
±110
±120
±145
±160
±190
±220
±275
V
Non-repetitive peak on-state pulse current (see Notes 2, 3 and 4)
ITSP A
2/10 µs(GR-1089-CORE, 2/10 µs voltage wave shape) 500
8/20 µs(IEC 61000-4-5, 1.2/50 µs voltage, 8/20 current combination wave generator) 300
10/160 µs(FCC Part 68, 10/160 µs voltage wave shape) 250
5/200 µs(VDE 0433, 10/700 µs voltage wave shape) 220
0.2/310 µs(I3124, 0.5/700 µs voltage wave shape) 200
5/310 µs(ITU-T K.20/21, 10/700 µs voltage wave shape) 200
5/310 µs(FTZ R12, 10/700 µs voltage wave shape) 200
5/320 µs(FCC Part 68, 9/720 µs voltage wave shape) 200
10/560 µs(FCC Part 68, 10/560 µs voltage wave shape) 160
10/1000 µs(GR-1089-CORE, 10/1000 µs voltage wave shape) 100
Non-repetitive peak on-state current (see Notes 2, 3 and 5)
ITSM
55
60
1
A
20 ms (50 Hz) full sine wave
16.7 ms (60 Hz) full sine wave
1000 s 50 Hz/60 Hz a.c.
Initial rate of rise of on-state current, Exponential current ramp, Maximum ramp value < 200 A diT/dt 400 A/µs
Junction temperature TJ-40 to +150 °C
Storage temperature range Tstg -65 to +150 °C
NOTES: 1. See Figure 9 for voltage values at lower temperatures.
2. Initially the TISP3xxxH3SL must be in thermal equilibrium.
3. These non-repetitive rated currents are peak values of either polarity. The rated current values may be applied to the R or T
terminals. Additionally, both R and T terminals may have their rated current values applied simultaneously (in this case the G
terminal return current will be the sum of the currents applied to the R and T terminals). The surge may be repeated after the
TISP3xxxH3SL returns to its initial conditions.
4. See Figure 10 for impulse current ratings at other temperatures. Above 85 °C, derate linearly to zero at 150 °C lead
temperature.
5. EIA/JESD51-2 environment and EIA/JESD51-3 PCB with standard footprint dimensions connected with 5 A rated printed wiring
track widths. See Figure 8 for the current ratings at other durations. Figure 8 shows the R and T terminal current rating for
simultaneous operation. In this condition, the G terminal current will be 2xITSM(t), the sum of the R and T terminal currents. Derate
current values at -0.61 %/°C for ambient temperatures above 25 °C.
Absolute Maximum Ratings, TA = 25 °C (Unless Otherwise Noted)
TISP3xxxH3SL Overvoltage Protector Series
JANUARY 1999 - REVISED JANUARY 2007
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
Electrical Characteristics for the R and G or T and G Terminals, TA = 25 °C (Unless Otherwise Noted)
TISP3xxxH3SL Overvoltage Protector Series
Parameter Test Conditions Min Typ Max Unit
IDRM Repetitive peak off-
state current VD = VDRM TA = 25 °C
TA = 85 °C
±5
±10 µA
V(BO) Breakover voltage dv/dt = ±750 V/ms, RSOURCE =300 Ω
‘3070
‘3080
‘3095
‘3115
‘3125
‘3135
‘3145
‘3180
‘3210
‘3250
‘3290
‘3350
±70
±80
±95
±115
±125
±135
±145
±180
±210
±250
±290
±350
V
V(BO) Impulse breakover
voltage
dv/dt ≤
±1000 V/µs, Linear voltage ramp,
Maximum ramp value = ±500 V
di/dt = ±20 A/µs, Linear current ramp,
Maximum ramp value = ±10 A
‘3070
‘3080
‘3095
‘3115
‘3125
‘3135
‘3145
‘3180
‘3210
‘3250
‘3290
‘3350
±78
±88
±103
±124
±134
±144
±154
±189
±220
±261
±302
±362
V
I(BO) Breakover current dv/dt = ±750 V/ms, RSOURCE =300 Ω±0.15 ±0.6 A
VTOn-state voltage IT=±5A, t
W=100 µs±3V
IHHolding current IT=±5A, di/dt=-/+30mA/ms ±0.15 ±0.6 A
dv/dt Critical rate of rise of
off-state voltage Linear voltage ramp, Maximum ramp value < 0.85VDRM ±5kV/µs
IDOff-state current VD=±50 V TA = 85 °C±10 µA
Coff Off-state capacitance
f=100 kHz, Vd=1V rms, V
D=0,
f=100 kHz, Vd=1V rms, V
D=-1V
f=100 kHz, Vd=1V rms, V
D=-2V
f=100 kHz, Vd=1V rms, V
D=-50V
f=100 kHz, Vd=1V rms, V
D=-100 V
(see Note 6)
‘3070 thru ‘3115
‘3125 thru ‘3210
‘3250 thru ‘3350
‘3070 thru ‘3115
‘3125 thru ‘3210
‘3250 thru ‘3350
‘3070 thru ‘3115
‘3125 thru ‘3210
‘3250 thru ‘3350
‘3070 thru ‘3115
‘3125 thru ‘3210
‘3250 thru ‘3350
‘3125 thru ‘3210
‘3250 thru ‘3350
170
90
84
150
79
67
140
74
62
73
35
28
33
26
pF
NOTE 6: To avoid possible voltage clipping, the ‘3125 is tested with VD=-98V.
JANUARY 1999 - REVISED JANUARY 2007
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
Electrical Characteristics for the R and T Terminals, TA = 25 °C (Unless Otherwise Noted)
Thermal Characteristics
TISP3xxxH3SL Overvoltage Protector Series
Parameter Test Conditions Min Typ Max Unit
IDRM Repetitive peak off-
state current VD = 2VDRM ±5µA
V(BO) Breakover voltage dv/dt = ±750 V/ms, RSOURCE =300 Ω
‘3070
‘3080
‘3095
‘3115
‘3125
‘3135
‘3145
‘3180
‘3210
‘3250
‘3290
‘3350
±140
±160
±190
±230
±250
±270
±290
±360
±420
±500
±580
±700
V
V(BO) Impulse breakover
voltage
dv/dt ≤±1000 V/µs, Linear voltage ramp,
Maximum ramp value = ±500 V
di/dt = ±20 A/µs, Linear current ramp,
Maximum ramp value = ±10 A
‘3070
‘3080
‘3095
‘3115
‘3125
‘3135
‘3145
‘3180
‘3210
‘3250
‘3290
‘3350
±156
±176
±206
±248
±268
±288
±308
±378
±440
±522
±604
±724
V
Parameter Test Conditions Min Typ Max Unit
RθJA Junction to free air thermal resistance EIA/JESD51-3 PCB, IT = ITSM(1000),
TA = 25 ° °
C, (see Note 7) 50 C/W
NOTE 7: EIA/JESD51-2 environment and PCB has standard footprint dimensions connected with 5 A rated printed wiring track widths.
JANUARY 1999 - REVISED JANUARY 2007
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
Parameter Measurement Information
TISP3xxxH3SL Overvoltage Protector Series
Figure 1. Voltage-current Characteristic for Terminal Pairs
-v V
DRM
I
DRM
V
D
I
H
I
T
V
T
I
TSM
I
TSP
V
(BO)
I
(BO)
I
D
Quadra nt I
Switching
Characteristic
+v
+i
V
(BO)
I
(BO)
V
D
I
D
I
H
I
T
V
T
I
TSM
I
TSP
-i
Quadrant III
Switching
Characteristic
PM4XAAC
V
DRM
I
DRM
V
D
= ±50 V and I
D
= ±10 µA
used for reliability release
JANUARY 1999 - REVISED JANUARY 2007
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
Typical Characteristics
TISP3xxxH3SL Overvoltage Protector Series
.
Figure 2. Figure 3.
Figure 4. Figure 5.
TJ - Junction Temperature - °C
-25 0 25 50 75 100 125 150
|ID| - Off-State Current - µA
0·001
0·01
0·1
1
10
100 TCHAG
VD = ±50 V
TJ - Junction Temperature - °C
-25 0 25 50 75 100 125 150
Norm alized Breakover Voltage
0.95
1.00
1.05
1.10 TC4HAF
VT - On-State Voltage - V
0.7 1.5 2 3 4 5 7110
IT - On-State Current - A
1.5
2
3
4
5
7
15
20
30
40
50
70
150
200
1
10
100
TA = 25 °C
tW = 100 µs
'3250
THRU
'3350
'3125
THRU
'3210
'3070
THRU
'3115
TC7AJ
TJ - Junction Temperature - °C
-25 0 25 50 75 100 125 150
Normalized Holding Current
0.4
0.5
0.6
0.7
0.8
0.9
1.5
2.0
1.0
TC4HAD
OFF-STATE CURRENT
vs
JUNCTION TEMPERA TURE
ON-STATE CURRENT
vs
ON-ST A TE V OL T A GE
NORMALIZED BREAKOVER VOLTAGE
vs
JUNCTION TEMPERA TURE
NORMALIZED HOLDING CURENT
vs
JUNCTION TEMPERA TURE
JANUARY 1999 - REVISED JANUARY 2007
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
Typical Characteristics
TISP3xxxH3SL Overvoltage Protector Series
Figure 6. Figure 7.
V
D
- Off-state Voltage - V
0.5 1 2 3 5 10 20 30 50 100 150
Capacitance Normalized to V
D
= 0
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
T
J
= 25 °C
V
d
= 1 Vrms
'3125 THRU '3210
'3250 THRU '3350
'3070 THRU '3115
TC7HAK
V
DRM
- Repetitive Peak Off-State Voltage - V
50 60 70 80 90 150 200 250 300100
C - Differential Off-State Capacitance - pF
30
35
40
45
50
55
60
65
70
75
DC = Coff(-2 V) - Coff(-50 V)
'3070
'3080
'3095
'3125
'3135
'3145
'3180
'3250
'3290
'3350
'3210
'3115
TC7XAN
NORMALIZED CAPACITANCE
vs
OFF-ST A TE V OL T A GE
DIFFERENTIAL OFF-STATE CAPACITANCE
vs
RATED REPETITIVE PEAK OFF-STATE VOLTAGE
JANUARY 1999 - REVISED JANUARY 2007
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
Typical Characteristics
TISP3xxxH3SL Overvoltage Protector Series
.
Figure 8.
Figure 9. Figure 10.
t - Current Duratio n - s
0·1 1 10 100 1000
ITSM(t) - Non-Repetitive Peak On-State Current - A
1.5
2
3
4
5
6
7
8
9
15
20
1
10
TI4HACA
VGEN = 600 V rms, 50/60 Hz
RGEN = 1.4*VGEN/ITSM(t)
EIA/JESD51-2 ENVIRONMENT
EIA/JESD51-3 PCB, TA = 25 °C
SIMULTANEOUS OPERATION
OF R AND T TERM INAL S. G
TERMINAL CURRENT = 2 x ITSM(t)
TAMIN - Minimum Ambient Temperature - °C
-35 -25 -15-5 5 15 25-40 -30 -20 -10 0 10 20
Derating Factor
0.93
0.94
0.95
0.96
0.97
0.98
0.99
1.00
'3250 THRU '3350
'3125 THRU '3210
'3070 THRU '3115
TC7HAM
TA - Ambient Temperature - °C
-40 -30 -20 -10 0 10 20304050607080
Impulse Current - A
90
100
120
150
200
250
300
400
500
600
700
IEC 1.2/50, 8/20
ITU-T 10/700
FCC 10/560
BELLCORE 2/10
BELLCORE 10/1000
FCC 10/160
TC4HAA
NON-REPETITIVE PEAK ON-STATE CURRENT
vs
CURRENT DURATION
IMPULSE RATING
vs
AMBIENT TEMPERA TURE
VDRM DERATING FACTOR
vs
MINIMUM AMBIIENT TEMPERATURE
JANUARY 1999 - REVISED JANUARY 2007
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP3xxxH3SL Overvoltage Protector Series
APPLICATIONS INFORMATION
Impulse Testing
To verify the withstand capability and safety of the equipment, standards require that the equipment is tested with various impulse wave
forms. The table below shows some common values.
If the impulse generator current exceeds the protector’s current rating, then a series resistance can be used to reduce the current to the
protector’s rated value to prevent possible failure. The required value of series resistance for a given waveform is given by the following
calculations. First, the minimum total circuit impedance is found by dividing the impulse generator’s peak voltage by the protector’s rated
current. The impulse generator’s fictitious impedance (generator’s peak voltage divided by peak short circuit current) is then subtracted
from the minimum total circuit impedance to give the required value of series resistance. In some cases, the equipment will require verifi-
cation over a temperature range. By using the rated waveform values from Figure 10, the appropriate series resistor value can be calcu-
lated for ambient temperatures in the range of -40 °C to 85 °C.
AC Power Testing
The protector can withstand the G return currents applied for times not exceeding those shown in Figure 8. Currents that exceed these
times must be terminated or reduced to avoid protector failure. Fuses, PTC (Positive Temperature Coefficient) resistors and fusible resis-
tors are overcurrent protection devices which can be used to reduce the current flow. Protective fuses may range from a few hundred
milliamperes to one ampere. In some cases, it may be necessary to add some extra series resistance to prevent the fuse opening during
impulse testing. The current versus time characteristic of the overcurrent protector must be below the line shown in Figure 8. In some
cases, there may be a further time limit imposed by the test standard (e.g. UL 1459 wiring simulator failure).
Capacitance
The protector characteristic off-state capacitance values are given for d.c. bias voltage, VD, values of 0, -1 V, -2 V, and -50 V. Where pos-
sible, values are also given for -100 V. Values for other voltages may be calculated by multiplying the VD= 0 capacitance value by the
factor given in Figure 6. Up to 10 MHz, the capacitance is essentially independent of frequency. Above 10 MHz, the effective capaci-
tance is strongly dependent on connection inductance. In many applications, the typical conductor bias voltages will be about -2 V and
-50 V. Figure 7 shows the differential (line unbalance) capacitance caused by biasing one protector at -2 V and the other at -50 V.
Normal System Voltage Levels
The protector should not clip or limit the voltages that occur in normal system operation. For unusual conditions, such as ringing without
the line connected, some degree of clipping is permissible. Under this condition, about 10 V of clipping is normally possible without acti-
vating the ring trip circuit. Figure 9 allows the calculation of the protector VDRM value at temperatures below 25 °C. The calculated value
should not be less than the maximum normal system voltages. The TISP3290H3, with a VDRM of 220 V, can be used for the protection of
ring generators producing 105 V rms of ring on a battery voltage of -58 V. The peak ring voltage will be 58 + 1.414*105 = 206.5 V.
However, this is the open circuit voltage and the connection of the line and its equipment will reduce the peak voltage.
Standard
Peak Voltage
Setting
V
Voltage
Waveform
µs
Peak Current
Value
A
Current
Waveform
µs
TISP3xxxH3
25 °C Rating
A
Series
Resistance
Ω
GR-1089-CORE 2500 2/10 500 2/10 500 0
1000 10/1000 100 10/1000 100
FCC Part 68
(March 1998)
1500 10/160 200 10/160 250 0
800 10/560 100 10/560 160 0
1500 9/720 † 37.5 5/320 † 200 0
1000 9/720 † 25 5/320 † 200 0
I3124 1500 0.5/700 37.5 0.2/310 200 0
ITU-T K.20/K.21 1500
4000 10/700 37.5
100 5/310 200 0
† FCC Part 68 terminology for the waveforms produced by the ITU-T recommendation K.21 10/700 impulse generator
JANUARY 1999 - REVISED JANUARY 2007
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP3xxxH3SL Overvoltage Protector Series
APPLICATIONS INFORMATION
Normal System Voltage Levels (continued)
For the extreme case of an unconnected line, the temperature at which clipping begins can be calculated using the data from Figure 9.
To possibly clip, the VDRM value has to be 206.5 V. This is a reduction of the 220 V 25 °C VDRM value by a factor of 206.5/220 = 0.94.
Figure 9 shows that a 0.94 reduction will occur at an ambient temperature of -32 °C. In this example, the TISP3290H3 will allow normal
equipment operation, even on an open-circuit line, provided that the minimum expected ambient temperature does not fall below -32 °C.
JESD51 Thermal Measurement Method
To standardize thermal measurements, the EIA (Electronic Industries Alliance) has created the JESD51 standard. Part 2 of the standard
(JESD51-2, 1995) describes the test environment. This is a 0.0283 m3(1 ft3) cube which contains the test PCB (Printed Circuit Board)
horizontally mounted at the center. Part 3 of the standard (JESD51-3, 1996) defines two test PCBs for surface mount components; one
for packages smaller than 27 mm (1.06 ”) on a side and the other for packages up to 48 mm (1.89 ”). The thermal measurements used
the smaller 76.2 mm x 114.3 mm (3.0 ” x 4.5 ”) PCB. The JESD51-3 PCBs are designed to have low effective thermal conductivity (high
thermal resistance) and represent a worse case condition. The PCBs used in the majority of applications will achieve lower values of
thermal resistance and so can dissipate higher power levels than indicated by the JESD51 values.
“TISP” is a trademark of Bourns, Ltd., a Bourns Company, and is Registered in U.S. Patent and Trademark Office.
“Bourns” is a registered trademark of Bourns, Inc. in the U.S. and other countries.
