MITSUBISHI Nch POWER MOSFET FS2KM-16A HIGH-SPEED SWITCHING USE FS2KM-16A OUTLINE DRAWING Dimensions in mm 3 0.3 6.5 0.3 2.8 0.2 3.2 0.2 3.6 0.3 14 0.5 15 0.3 10 0.3 1.1 0.2 1.1 0.2 0.75 0.15 w 2.6 0.2 1 2 3 VDSS ................................................................................ 800V rDS (ON) (MAX) ................................................................ 6.0 ID ............................................................................................ 2A Viso ................................................................................ 2000V 0.75 0.15 2.54 0.25 4.5 0.2 2.54 0.25 q GATE w DRAIN e SOURCE q e TO-220FN APPLICATION SMPS, DC-DC Converter, battery charger, power supply of printer, copier, HDD, FDD, TV, VCR, personal computer etc. MAXIMUM RATINGS Symbol VDSS VGSS ID IDM (Tc = 25C) Parameter Drain-source voltage Gate-source voltage PD Tch Tstg Drain current Drain current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Viso -- Isolation voltage Weight Conditions VGS = 0V VDS = 0V AC for 1minute, Terminal to case Typical value Ratings Unit 800 30 2 6 V V A A 30 -55 ~ +150 -55 ~ +150 2000 W C C Vrms 2 g Feb.1999 MITSUBISHI Nch POWER MOSFET FS2KM-16A HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS (Tch = 25C) Symbol Parameter V (BR) DSS Drain-source breakdown voltage Gate-source breakdown voltage Gate-source leakage current Drain-source leakage current ID = 1mA, VGS = 0V IGS = 100A, VDS = 0V VGS = 25V, VDS = 0V VDS = 800V, VGS = 0V Gate-source threshold voltage Drain-source on-state resistance ID = 1mA, VDS = 10V ID = 1A, VGS = 10V ID = 1A, VGS = 10V ID = 1A, VDS = 10V V (BR) GSS IGSS IDSS VGS (th) rDS (ON) VDS (ON) yfs Ciss Drain-source on-state voltage Forward transfer admittance Input capacitance Coss Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Crss td (on) tr td (off) tf VSD Rth (ch-c) Limits Test conditions Turn-off delay time Fall time Source-drain voltage VDS = 25V, VGS = 0V, f = 1MHz VDD = 200V, ID = 1A, VGS = 10V, RGEN = RGS = 50 IS = 1A, VGS = 0V Channel to case Thermal resistance Unit Min. Typ. Max. 800 30 -- -- -- -- -- -- 10 V V A -- 2 -- -- -- 3 4.6 4.6 1 4 6.0 6.0 mA V V 1.2 -- -- -- 2.0 460 45 8 -- -- -- -- S pF pF pF -- -- -- -- 11 13 55 22 -- -- -- -- ns ns ns ns -- 1.0 1.5 V -- -- 4.17 C/W PERFORMANCE CURVES DRAIN CURRENT ID (A) 40 30 20 10 0 0 50 100 150 DRAIN CURRENT ID (A) 100ms 100 7 5 3 2 1ms 10ms 100ms 10-1 7 5 3 2 10-2 200 tw = 10ms TC = 25C Single Pulse DC 3 5 7 101 2 3 5 7 102 2 3 5 7 103 2 3 DRAIN-SOURCE VOLTAGE VDS (V) OUTPUT CHARACTERISTICS (TYPICAL) OUTPUT CHARACTERISTICS (TYPICAL) 2.0 TC = 25C Pulse Test VGS = 20V 10V 4.0 5V 3.0 PD = 30W 2.0 4.5V 1.0 4V 0 101 7 5 3 2 CASE TEMPERATURE TC (C) 5.0 0 MAXIMUM SAFE OPERATING AREA DRAIN CURRENT ID (A) POWER DISSIPATION PD (W) POWER DISSIPATION DERATING CURVE 50 10 20 30 40 50 DRAIN-SOURCE VOLTAGE VDS (V) TC = 25C Pulse Test VGS = 20V 10V 5V PD = 30W 1.6 4.5V 1.2 0.8 0.4 0 4V 0 4 8 12 16 20 DRAIN-SOURCE VOLTAGE VDS (V) Feb.1999 MITSUBISHI Nch POWER MOSFET FS2KM-16A HIGH-SPEED SWITCHING USE ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) 30 ID = 4A 20 2A 10 1A 0 4 8 12 16 VGS = 10V 20V 6 4 2 0 10-1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 20 TRANSFER CHARACTERISTICS (TYPICAL) FORWARD TRANSFER ADMITTANCE VS.DRAIN CURRENT (TYPICAL) 101 7 5 TC = 25C VDS = 50V Pulse Test FORWARD TRANSFER ADMITTANCE yfs (S) 3 2 1 VDS = 10V Pulse Test TC = 25C 3 2 100 7 5 125C 75C 3 2 0 4 8 12 16 10-1 -1 10 20 2 3 5 7 100 2 3 5 7 101 GATE-SOURCE VOLTAGE VGS (V) DRAIN CURRENT ID (A) CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) SWITCHING CHARACTERISTICS (TYPICAL) 103 7 5 3 2 Ciss 102 7 5 3 2 Coss 101 7 5 3 Tch = 25C 2 f = 1MHZ 100 8 DRAIN CURRENT ID (A) 4 0 TC = 25C Pulse Test GATE-SOURCE VOLTAGE VGS (V) 5 DRAIN CURRENT ID (A) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) () 40 0 CAPACITANCE Ciss, Coss, Crss (pF) 10 TC = 25C Pulse Test Crss VGS = 0V 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 DRAIN-SOURCE VOLTAGE VDS (V) SWITCHING TIME (ns) DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V) 50 ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) 103 7 5 3 2 Tch = 25C VDD = 200V VGS = 10V RGEN = RGS = 50 102 7 5 3 2 td(off) tf tr 101 7 5 3 2 100 -1 10 td(on) 2 3 4 5 7 100 2 3 4 5 7 101 DRAIN CURRENT ID (A) Feb.1999 MITSUBISHI Nch POWER MOSFET FS2KM-16A HIGH-SPEED SWITCHING USE 20 SOURCE CURRENT IS (A) VDS = 250V 12 400V 600V 8 4 0 4 8 12 16 6 4 2 0 0 0.8 1.6 2.4 3.2 4.0 SOURCE-DRAIN VOLTAGE VSD (V) ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 5.0 VGS = 10V ID = 1/2ID Pulse Test 3 2 100 7 5 3 2 -50 0 50 100 3.0 2.0 1.0 0 150 BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 1.4 VGS = 0V ID = 1mA 1.2 1.0 0.8 0.6 -50 0 50 100 150 CHANNEL TEMPERATURE Tch (C) VDS = 10V ID = 1mA 4.0 CHANNEL TEMPERATURE Tch (C) 0.4 TC = 125C 75C 25C GATE CHARGE Qg (nC) 101 7 5 10-1 VGS = 0V Pulse Test 8 20 GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25C) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (tC) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (tC) 10 Tch = 25C ID = 2A 16 0 DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25C) SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) -50 0 50 100 150 CHANNEL TEMPERATURE Tch (C) TRANSIENT THERMAL IMPEDANCE Zth (ch-c) (C/W) GATE-SOURCE VOLTAGE VGS (V) GATE-SOURCE VOLTAGE VS.GATE CHARGE (TYPICAL) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 101 7 5 3 2 100 7 5 3 2 10-1 7 5 3 2 D = 1.0 0.5 0.2 0.1 0.05 0.02 0.01 Single Pulse 10-2 -4 10 2 3 5710-3 2 3 5710-22 3 5710-12 3 57100 2 3 57101 2 3 57102 PULSE WIDTH tw (s) Feb.1999