ee SEMICONDUCTOR wm MMBD1201 / 1203 / 1204 / 1205 CONNECTION DIAGRAMS ee : : FAIRCHILD Discrete POWER & Signal Technologies | 3 1201 3 3 1203 1 2NC 1 L1] Lz] 12040=F | 1205 MARKING MMBD1201 24 MMBD1204A 27 MMBD1203 26 MMBD1205A 28 1 2 1 2 High Conductance Ultra Fast Diode Sourced from Process 1P. Absol ute Maxi mu m Ratings* TA = 25C unless otherwise noted Symbol Parameter Value Units Wi Working Inverse Voltage 50 Vv lo Average Rectified Current 200 mA lr DC Forward Current 600 mA if Recurrent Peak Forward Current 700 mA iffsurge) Peak Forward Surge Current Pulse width = 1.0 second 1.0 A Pulse width = 1.0 microsecond 2.0 A Tstg Storage Temperature Range -55 to +150 C Ty Operating Junction Temperature 150 C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25C unless otherwise noted Symbol Characteristic Max Units MMBD1201/1203/1204/1205* Pp Total Device Dissipation 350 mW Derate above 25C 2.8 mW/C Rega Thermal Resistance, Junction to Ambient 357 C/W *Device mounted on glass epoxy PCB 1.6" X 1.6" X 0.06"; mounting pad for the collector lead min. 0.93 in2 41997 Fairchild Semiconductor Corporation GOcL / vOC! / COL / LOCLGGININElectrical Characteristics High Conductance Ultra Fast Diode (continued) TA = 25C unless otherwise noted Symbol Parameter Test Conditions Min | Max | Units By Breakdown Voltage lp = 100 LA 100 V ln Reverse Current Va=20V 25 nA Vea =50V 50 nA Ve = 50 V, Ta= 150C 5.0 uA Ve Forward Voltage IF =1.0 mA 550 600 mV lp=10mA 660 740 mV Ip = 100 mA 820 920 mV lp = 200 mA 0.87 1.0 Vv Ir = 300 mA 1.1 Vv Cr Diode Capacitance Va =0, f = 1.0 MHz 2.0 pF Tar Reverse Recovery Time lan = 1.0 mA, Ir = lp = 10 mA, 4.0 ns R,_ = 10002 Typical Characteristics REVERSE VOLTAGE vs REVERSE CURRENT BV - 1.0 to 100 uA ao le] Ta= 25C o z Oo QoQ Va - REVERSE VOLTAGE (V) iD oO o 1 2 3 5 10 20 30 50 100 In - REVERSE CURRENT (uA) FORWARD VOLTAGE vs FORWARD CURRENT VF - 1.0 to 100 uA - FORWARD VOLTAGE (mV) wo ios) BA 6 a oS @ 6 6 oa F ny ao ao Vv nN nD a 1 2 3 5 10 20 30 = 650 100 IF - FORWARD CURRENT (uA) REVERSE CURRENT vs REVERSE VOLTAGE IR - 10 to 100 V mo Mw w&w Oo am oO Oo Oo Oo a oO Oo - REVERSE CURRENT (nA) a 3 la 2 20 30 50 70 100 Va - REVERSE VOLTAGE (V) GENERAL RULE: The Reverse Current of a diode will approximately double for every ten (10) Degree C increase in Temperature FORWARD VOLTAGE vs FORWARD CURRENT VF -0.1 10 10 mA np ao Ta= 25C ~~ Qo oO DD a ao ao a ao V,_ - FORWARD VOLTAGE (mV) a @ 38 38 3 3 f ao ao 0.1 02 03 0.5 1 2 3 5 10 IF - FORWARD CURRENT (mA) GOcL / vOC! / COL / LOCLGGININHigh Conductance Ultra Fast Diode (continued) Typical Characteristics (continued) FORWARD VOLTAGE vs FORWARD CURRENT VF -10-800 mA 5 Ta= 25C 4 . Pe : : - FORWARD VOLTAGE (V) So ford VE 6 10 20 30 50 100 200 300 500 I; - FORWARD CURRENT (mA) REVERSE RECOVERY TIME vs REVERSE CURRENT TRR - IR 10 mA vs 60 mA 4 Ta= 25C a wo nm REVERSE RECOVERY (nS) _ nm a a 1 10 20 30 40 50 60 REVERSE CURRENT (mA) IRR (Reverse Recovery Current) = 1.0 mA - Rloop = 100 Ohms CAPACITANCE vs REVERSE VOLTAGE VR-0.0to 15V c & w 1.2 o =z & m1