Features
l Ideally Suited for Automatic Insertion
l 150oC Junction Temperature
l Low Current, Low Voltage
l Epitaxial Planar Die Construction
Mechanical Data
l Case: SOT-23, Molded Plastic
l Terminals: Solderable per MIL-STD-202, Method 208
l Marking: EH
l Weight: 0.008 grams ( approx.)
Maximum Ratings @ 25oC Unless Otherwise Specified
Charateristic Symbol Value Unit
Collector-Emitter Voltage
VCEO
45 V
Collector-Base Voltage
VCBO
75 V
Emitter-Base Voltage
VEBO
5 V
Collector Current(DC) I
C
800 mA
Peak Collector Current I
CM
1000 mA
Base Current(DC) I
B
100 mA
Peak Base Current I
BM
200 mA
Power Dissipation@T
s
=79oC P
d
330 mW
Thermal Resistance, Junction to
Ambient Air
285(1) oC/W
Thermal Resistance, Junction to
Soldering Point
215 oC/W
Operating & Storage Temperature Tj, TSTG -55~150 oC
Notes:
(1) Mounted on FR-4 printed-circuit board
BCW66H
NPN Small
Signal Transistor
330mW
www.mccsemi.com
RθJA
RθJS
Suggested Solder
Pad Layout
DIMENSIONS
INCHES MM
DIM MIN MAX MIN MAX NOTE
A.110 .120 2.80 3.04
B.083 .098 2.10 2.64
C.047 .055 1.20 1.40
D.035 .041 .89 1.03
E.070 .081 1.78 2.05
F.018 .024 .45 .60
G.0005 .0039 .013 .100
H.035 .044 .89 1.12
J.003 .007 .085 .180
K.015 .020 .37 .51
.079
inches
mm
.031
.800
.035
.900
.037
.950
.037
.950
K
A
B
C
D
E
F
G
H
J
SOT-23
omponents
21201 Itasca Street Chatsworth

 !"#
$% !"#
MCC
www.mccsemi.com
MCC
BCW66H
Electrical Characteristics Ratings at 25°C ambient temperature unless otherwise specified.
Parameter Symbol Min. TYP. Max. Unit
DC Current Gain(1)
at VCE = 10V, IC = 100µAh
FE
80–––
at VCE = 1V, IC = 10mA hFE
18 0–––
at VCE = 1V, IC = 100mA hFE 250 630
at VCE = 2V, IC = 500mA hFE
Collector-Emitter Saturation Voltage(1)
at IC = 100mA, IB = 10mA VCEsat 0.3 V
at IC = 500mA, IB = 50mA VCEsat 0.7 V
Base-Emitter Saturation Voltage(1)
at IC = 100mA, IB = 10mA VBEsat 1.25 V
at IC = 500mA, IB = 50mA VBEsat ––2V
Collector-Emitter Breakdown Voltage
at IC = 10mA, IB = 0 V(BR)CEO 45 V
Collector-Base Breakdown Voltage
at IC = 10µA, IB = 0 V(BR)CBO 75 V
Emitter-Base Breakdown Voltage
at IE = 10µA, IC = 0 V(BR)EBO 5––V
Collector-Base Cut-off Current
at VCB = 45V, IE = 0 ICBO 20 nA
at VCB = 45V, IE = 0, TA= 150°C ICBO ––20µA
Emitter-Base Cut-off Current
at VEB = 4V, IC = 0 IEBO 20 nA
Gain-Bandwidth Product
at VCE
= 10V, IC
= 20mA, f = 100MHz fT
100 MHZ
Collector-Base Capacitance
at VCB = 1 0V, f = 1MHz CCB –6–pF
Emitter-Base Capacitance
at VEB = 0.5V, f = 1MHz CEB –60–pF
Note: (1) Pulse test: t 300µs, D = 2%
100