This is information on a product in full production.
February 2014 DocID023964 Rev 5 1/21
21
STB24N60M2, STI24N60M2,
STP24N60M2, STW24N60M2
N-channel 600 V, 0.168 Ω typ., 18 A MDmesh II Plus™ low Qg
Power MOSFET in D2PAK, I2PAK, TO-220 and TO-247 packages
Datasheet
−
production data
Figure 1. Internal schematic diagram
Features
•Extremely low gate charge
•Lower R
DS(on)
x area vs previous generation
•Low gate input resistance
•100% avalanche tested
•Zener-protected
Applications
•Switching applications
Description
These devices are N-channel Power MOSFETs
developed using a new generation of MDmesh™
technology: MDmesh II Plus™ low Q
g
. These
revolutionary Power MOSFETs associate a
vertical structure to the company's strip layout to
yield one of the world's lowest on-resistance and
gate charge. They are therefore suitable for the
most demanding high efficiency converters.
D(2, TAB)
G(1)
S(3)
AM01476v1
D
2
PAK
TO-220 TO-247
I
2
PAK
1
3
2
TAB
123
TAB
123
123
TAB
Order codes V
DS
@ T
Jmax
R
DS(on)
max I
D
STB24N60M2
650 V 0.19 Ω18 A
STI24N60M2
STP24N60M2
STW24N60M2
Table 1. Device summary
Order codes Marking Package Packaging
STB24N60M2
24N60M2
D
2
PAK Tape and reel
STI24N60M2 I
2
PAK
TubeSTP24N60M2 TO-220
STW24N60M2 TO-247
www.st.com
Contents STB24N60M2, STI24N60M2, STP24N60M2, STW24N60M2
2/21 DocID023964 Rev 5
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
DocID023964 Rev 5 3/21
STB24N60M2, STI24N60M2, STP24N60M2, STW24N60M2 Electrical ratings
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
V
GS
Gate-source voltage ± 25 V
I
D
Drain current (continuous) at T
C
= 25 °C 18 A
I
D
Drain current (continuous) at T
C
= 100 °C 12 A
I
DM (1)
1. Pulse width limited by safe operating area.
Drain current (pulsed) 72 A
P
TOT
Total dissipation at T
C
= 25 °C 150 W
dv/dt
(2)
2. I
SD
≤ 18 A, di/dt ≤ 400 A/μs; V
DS
peak
< V
(BR)DSS
, V
DD
=400 V.
Peak diode recovery voltage slope 15 V/ns
dv/dt
(3)
3. V
DS
≤ 480 V
MOSFET dv/dt ruggedness 50 V/ns
T
stg
Storage temperature - 55 to 150 °C
T
j
Max. operating junction temperature
Table 3. Thermal data
Symbol Parameter Value Unit
D
2
PAK I
2
PAK TO-220 TO-247
R
thj-case
Thermal resistance junction-case max 0.83 °C/W
R
thj-pcb
Thermal resistance junction-pcb max
(1)
1. When mounted on 1 inch² FR-4, 2 Oz copper board
30 °C/W
R
thj-amb
Thermal resistance junction-ambient max 62.5 50 °C/W
Table 4. Avalanche characteristics
Symbol Parameter Value Unit
I
AR
Avalanche current, repetitive or not
repetitive (pulse width limited by T
jmax
) 3.5 A
E
AS
Single pulse avalanche energy (starting
T
j
=25°C, I
D
= I
AR
; V
DD
=50) 180 mJ
Electrical characteristics STB24N60M2, STI24N60M2, STP24N60M2, STW24N60M2
4/21 DocID023964 Rev 5
2 Electrical characteristics
(T
C
= 25 °C unless otherwise specified)
Table 5. On /off states
Symbol Parameter Test conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source
breakdown voltage I
D
= 1 mA, V
GS
= 0 600 V
I
DSS
Zero gate voltage
drain current (V
GS
= 0)
V
DS
= 600 V 1 μA
V
DS
= 600 V, T
C
=125 °C 100 μA
I
GSS
Gate-body leakage
current (V
DS
= 0) V
GS
= ± 25 V ±10 μA
V
GS(th)
Gate threshold voltage V
DS
= V
GS
, I
D
= 250 μA 234V
R
DS(on)
Static drain-source
on-resistance V
GS
= 10 V, I
D
= 9 A 0.168 0.19 Ω
Table 6. Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit
C
iss
Input capacitance
V
DS
= 100 V, f = 1 MHz,
V
GS
= 0
- 1060 - pF
C
oss
Output capacitance - 55 - pF
C
rss
Reverse transfer
capacitance -2.2-
pF
C
oss eq.(1)
1. C
oss eq.
is defined as a constant equivalent capacitance giving the same charging time as C
oss
when V
DS
increases from 0 to 80% V
DSS
Equivalent output
capacitance VDS = 0 to 480 V, VGS = 0 - 258 - pF
RG
Intrinsic gate
resistance f = 1 MHz, ID = 0 - 7 - Ω
QgTotal gate charge VDD = 480 V, ID = 18 A,
VGS = 10 V
(see Figure 17)
-29-nC
Qgs Gate-source charge - 6 - nC
Qgd Gate-drain charge - 12 - nC
Table 7. Switching times
Symbol Parameter Test conditions Min. Typ. Max. Unit
t
d(on)
Turn-on delay time
V
DD
= 300 V, I
D
= 9 A,
R
G
= 4.7 Ω, V
GS
= 10 V
(see Figure 16 and 21)
-14-ns
t
r
Rise time - 9 - ns
t
d(off)
Turn-off delay time - 60 - ns
t
f
Fall time - 15 - ns
DocID023964 Rev 5 5/21
STB24N60M2, STI24N60M2, STP24N60M2, STW24N60M2 Electrical characteristics
Table 8. Source drain diode
Symbol Parameter Test conditions Min. Typ. Max. Unit
I
SD
Source-drain current - 18 A
I
SDM
(1)
1. Pulse width limited by safe operating area.
Source-drain current (pulsed) - 72 A
V
SD(2)
2. Pulsed: pulse duration = 300 μs, duty cycle 1.5%
Forward on voltage I
SD
= 18 A, V
GS
= 0 - 1.6 V
t
rr
Reverse recovery time
I
SD
= 18 A, di/dt = 100 A/μs
V
DD
= 60 V (see Figure 18)
- 332 ns
Q
rr
Reverse recovery charge - 4 μC
I
RRM
Reverse recovery current - 24 A
t
rr
Reverse recovery time I
SD
= 18 A, di/dt = 100 A/μs
V
DD
= 60 V, T
j
= 150 °C
(see Figure 18)
- 450 ns
Q
rr
Reverse recovery charge - 5.5 μC
I
RRM
Reverse recovery current - 25 A
Electrical characteristics STB24N60M2, STI24N60M2, STP24N60M2, STW24N60M2
6/21 DocID023964 Rev 5
2.1 Electrical characteristics (curves)
Figure 2. Safe operating area for D
2
PAK, I
2
PAK
and TO-220 Figure 3. Thermal impeda nce D
2
P AK, I
2
P AK and
TO-220
AM15495v1
I
D
10
1
0.1
0.1 1100 V
DS
(V)
10
(A)
Operation in this area is
Limited by max R
DS(on)
10µs
100µs
1ms
10ms
Tj=150°C
Tc=25°C
Single
pulse
Figure 4. Safe operating area for TO-247 Figure 5. Thermal impedan ce for TO-247
Figure 6. Output characteristics Figure 7. Transfer characteristics
I
D
10
1
0.1
0.1 1100 V
DS
(V)
10
(A)
Operation in this area is
Limited by max R
DS(on)
10µs
100µs
1ms
10ms
Tj=150°C
Tc=25°C
Single
pulse
AM15461v1
I
D
30
20
10
0010 V
DS
(V)
(A)
515
40
VGS= 4 V
VGS= 5 V
VGS= 7 V
VGS= 8, 9, 10 V
5
15
25
35
VGS= 6 V
20
AM15470v1
I
D
15
10
5
004V
GS
(V)
8
(A)
2610
20
VDS= 17 V
25
30
35
40
AM15469v1
DocID023964 Rev 5 7/21
STB24N60M2, STI24N60M2, STP24N60M2, STW24N60M2 Electrical characteristics
Figure 8. Gate charge vs gate-source voltage Figure 9. Static drain-source on-resistance
Figure 10. Capacitance variations Figure 11. Output capacitance stored energy
Figure 12. Normalized gate threshold voltage vs
temperature Figure 13. Normalized on-resistance vs
temperature
V
GS
6
4
2
005Q
g
(nC)
(V)
20
8
10 15
10
V
DD
=480 V
I
D
=18 A
25
300
200
100
0
400
500
V
DS
(V)
V
DS
12
30
600
AM15471v1
R
DS(on)
0.172
0.168
0.164
0.160 08I
D
(A)
(Ω)
412
0.176
V
GS
=10V
16
AM15465v1
C
1000
100
10
1
0.1 10 V
DS
(V)
(pF)
1100
Ciss
Coss
Crss
AM15665v1
E
oss
2
1
0
0100 V
DS
(V)
(µJ)
400
3
200 300
4
5
500 600
6
7
8
AM15472v1
V
GS(th)
0.9
0.8
0.7
0.6
-50 0T
J
(°C)
(norm)
-25
1.0
75
25 50 100
I
D
= 250 µA
1.1
AM15473v1
R
DS(on)
1.7
1.3
0.9
0.5
-50 0T
J
(°C)
(norm)
-25 75
25 50 100
0.7
1.1
1.5
1.9
2.1
I
D
= 9 A
2.3
V
GS
= 10 V
AM15464v1
Electrical characteristics STB24N60M2, STI24N60M2, STP24N60M2, STW24N60M2
8/21 DocID023964 Rev 5
Figure 14. Source -drain diode forward
characteristics Figure 15. Normalized V
(BR)DSS
vs temperature
V
SD
04I
SD
(A)
(V)
210
68
0
0.2
0.4
0.6
0.8
1
1.2 T
J
=-50°C
T
J
=150°C T
J
=25°C
12 14 16
1.4
AM15468v1
V
(BR)DSS
-50 0T
J
(°C)
(norm)
-25 75
25 50 100
0.93
0.95
0.97
0.99
1.01
1.05
1.07
1.03
I
D
= 1mA
1.09
1.11
AM15466v1
DocID023964 Rev 5 9/21
STB24N60M2, STI24N60M2, STP24N60M2, STW24N60M2 Test circuits
3 Test circuits
Figure 16. Switching times test circuit for
resistive load Figure 17. Gate charge test circuit
Figure 18. Test circuit for inductive load
switching and diode recovery times Figure 19. Unclamped induc tive load test c ircuit
Figure 20. Unclamped inductive waveform Figure 21. Switching time waveform
AM01468v1
VGS
PW
VD
RG
RL
D.U.T.
2200
μF
3.3
μFVDD
AM01469v1
VDD
47kΩ1kΩ
47kΩ
2.7kΩ
1kΩ
12V
Vi=20V=VGMAX
2200
μF
PW
IG=CONST
100Ω
100nF
D.U.T.
VG
AM01470v1
A
D
D.U.T.
S
B
G
25 Ω
AA
B
B
RG
G
FAST
DIODE
D
S
L=100μH
μF
3.3 1000
μFVDD
AM01471v1
Vi
Pw
VD
ID
D.U.T.
L
2200
μF
3.3
μFVDD
$0Y
9%5'66
9''
9''
9'
,'0
,'
AM01473v1
VDS
ton
tdon tdoff
toff
tf
tr
90%
10%
10%
0
0
90%
90%
10%
VGS
Package mechanical data STB24N60M2, STI24N60M2, STP24N60M2, STW24N60M2
10/21 DocID023964 Rev 5
4 Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK
®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK
®
is an ST trademark.
Figure 22. D²PAK (TO-263) drawing
0079457_T
DocID023964 Rev 5 11/21
STB24N60M2, STI24N60M2, STP24N60M2, STW24N60M2 Package mechanical data
Table 9. D²PAK (TO-263) mechanical data
Dim. mm
Min. Typ. Max.
A4.40 4.60
A1 0.03 0.23
b0.70 0.93
b2 1.14 1.70
c0.45 0.60
c2 1.23 1.36
D8.95 9.35
D1 7.50
E 10 10.40
E1 8.50
e2.54
e1 4.88 5.28
H 15 15.85
J1 2.49 2.69
L2.29 2.79
L1 1.27 1.40
L2 1.30 1.75
R0.4
V2 0° 8°
Package mechanical data STB24N60M2, STI24N60M2, STP24N60M2, STW24N60M2
12/21 DocID023964 Rev 5
Figure 23. D²PAK footprint
(a)
Figure 24. I²PAK (TO-262) drawing
a. All dimension are in millimeters
16.90
12.20
9.75
3.50
5.08
1.60
Footprint
0004982_Rev_H
DocID023964 Rev 5 13/21
STB24N60M2, STI24N60M2, STP24N60M2, STW24N60M2 Package mechanical data
Table 10. I²PAK (TO-262) mechanical data
DIM. mm.
min. typ max.
A 4.40 4.60
A1 2.40 2.72
b 0.61 0.88
b1 1.14 1.70
c 0.49 0.70
c2 1.23 1.32
D 8.95 9.35
e 2.40 2.70
e1 4.95 5.15
E10 10.40
L13 14
L1 3.50 3.93
L2 1.27 1.40
Package mechanical data STB24N60M2, STI24N60M2, STP24N60M2, STW24N60M2
14/21 DocID023964 Rev 5
Figure 25. TO-220 type A drawing
BW\SH$B5HYB7
DocID023964 Rev 5 15/21
STB24N60M2, STI24N60M2, STP24N60M2, STW24N60M2 Package mechanical data
Table 11. TO-220 type A mechanical data
Dim. mm
Min. Typ. Max.
A4.40 4.60
b0.61 0.88
b1 1.14 1.70
c0.48 0.70
D 15.25 15.75
D1 1.27
E 10 10.40
e2.40 2.70
e1 4.95 5.15
F1.23 1.32
H1 6.20 6.60
J1 2.40 2.72
L13 14
L1 3.50 3.93
L20 16.40
L30 28.90
∅
P3.75 3.85
Q2.65 2.95
Package mechanical data STB24N60M2, STI24N60M2, STP24N60M2, STW24N60M2
16/21 DocID023964 Rev 5
Figure 26. TO-2 47 drawing
0075325_G
DocID023964 Rev 5 17/21
STB24N60M2, STI24N60M2, STP24N60M2, STW24N60M2 Package mechanical data
Table 12. TO-247 mechanical data
Dim. mm.
Min. Typ. Max.
A 4.85 5.15
A1 2.20 2.60
b1.0 1.40
b1 2.0 2.40
b2 3.0 3.40
c 0.40 0.80
D 19.85 20.15
E 15.45 15.75
e 5.30 5.45 5.60
L 14.20 14.80
L1 3.70 4.30
L2 18.50
∅P 3.55 3.65
∅R 4.50 5.50
S 5.30 5.50 5.70
Packaging mechanical data STB24N60M2, STI24N60M2, STP24N60M2, STW24N60M2
18/21 DocID023964 Rev 5
5 Packaging mechanical data
Figure 27. Tape
P1
A0 D1
P0
F
W
E
D
B0
K0
T
User direction of feed
P2
10 pitches cumulative
tolerance on tape +/- 0.2 mm
User direction of feed
R
Bending radius
B1
For machine ref. only
including draft and
radii concentric around B0
AM08852v1
Top cover
tape
DocID023964 Rev 5 19/21
STB24N60M2, STI24N60M2, STP24N60M2, STW24N60M2 Packaging mechanical data
Figure 28. Reel
Table 13. D²PAK (TO-263) tape and reel mechanical data
Tape Reel
Dim. mm Dim. mm
Min. Max. Min. Max.
A0 10.5 10.7 A 330
B0 15.7 15.9 B 1.5
D 1.5 1.6 C 12.8 13.2
D1 1.59 1.61 D 20.2
E 1.65 1.85 G 24.4 26.4
F 11.4 11.6 N 100
K0 4.8 5.0 T 30.4
P0 3.9 4.1
P1 11.9 12.1 Base qty 1000
P2 1.9 2.1 Bulk qty 1000
R50
T 0.25 0.35
W 23.7 24.3
A
D
B
Full radius G measured at hub
C
N
REEL DIMENSIONS
40mm min.
Access hole
At sl ot location
T
Tape slot
in core for
tape start 25 mm min.
width
AM08851v2
Revision history STB24N60M2, STI24N60M2, STP24N60M2, STW24N60M2
20/21 DocID023964 Rev 5
6 Revision history
Table 14. Document revision history
Date Revision Changes
10-Dec-2012 1 First release.
20-Dec-2012 2 Added MOSFET dv/dt ruggedness in Table 2: Absolute maximum
ratings.
14-Jan-2013 3 Modified: Figure 16 , 17, 18 and 17
28-May-2013 4
– Minor text changes
– Updated: Table 7
– Updated: Table 11 and Figure 25
28-Feb-2014 5
– Minor text changes
– Modified: title of Figure 15.
– Modified: Figure 16, 17, 18 and 19
DocID023964 Rev 5 21/21
STB24N60M2, STI24N60M2, STP24N60M2, STW24N60M2
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