MMBZ16V, SZMMBZ16V 40 Watt Peak Power Zener Transient Voltage Suppressors SOT-23 Dual Common Anode Zeners for ESD Protection www.onsemi.com These dual monolithic silicon Zener diodes are designed for applications requiring transient overvoltage protection capability. They are intended for use in voltage and ESD sensitive equipment such as computers, printers, business machines, communication systems, medical equipment and other applications. Their dual junction common anode design protects two separate lines using only one package. These devices are ideal for situations where board space is at a premium. Features * SOT-23 Package Allows Either Two Separate Unidirectional * * * * * * * * * Configurations or a Single Bidirectional Configuration Standard Zener Breakdown Voltage Range - 15.2 V to 16.80 V Peak Power - 40 W @ 1.0 ms (Unidirectional), per Figure 5 Waveform ESD Rating: - Class 3B (> 16 kV) per the Human Body Model - Class C (> 400 V) per the Machine Model ESD Rating of IEC61000-4-2 Level 4, 30 kV Contact Discharge Maximum Clamping Voltage @ Peak Pulse Current Low Leakage < 5.0 mA Flammability Rating UL 94 V-0 SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable This is a Pb-Free Device SOT-23 CASE 318 STYLE 12 CATHODE 1 3 ANODE CATHODE 2 MARKING DIAGRAM XXXMG G 1 XXX = Specific Device Code M = Date Code G = Pb-Free Package (Note: Microdot may be in either location) DEVICE MARKING INFORMATION See specific marking information in the device marking column of the table on page 2 of this data sheet. Mechanical Characteristics CASE: Void-free, transfer-molded, thermosetting plastic case FINISH: Corrosion resistant finish, easily solderable MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES: 260C for 10 Seconds Package designed for optimal automated board assembly Small package size for high density applications Available in 8 mm Tape and Reel ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Use the Device Number to order the 7 inch/3,000 unit reel. Replace the "T1" with "T3" in the Device Number to order the 13 inch/10,000 unit reel. (c) Semiconductor Components Industries, LLC, 2013 October, 2016 - Rev. 1 1 Publication Order Number: MMBZ16VAL/D MMBZ16V, SZMMBZ16V MAXIMUM RATINGS Symbol Value Unit Peak Power Dissipation @ 1.0 ms (Note 1) Rating Ppk 40 W Total Power Dissipation on FR-5 Board (Note 2) @ TA = 25C Derate above 25C PD 225 1.8 mW mW/C Thermal Resistance Junction-to-Ambient RqJA 556 C/W Total Power Dissipation on Alumina Substrate (Note 3) @ TA = 25C Derate above 25C PD 300 2.4 mW mW/C Thermal Resistance Junction-to-Ambient RqJA 417 C/W Junction and Storage Temperature Range TJ, Tstg - 55 to +150 C TL 260 C Lead Solder Temperature - Maximum (10 Second Duration) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Non-repetitive current pulse per Figure 5 and derate above TA = 25C per Figure 6. 2. FR-5 = 1.0 x 0.75 x 0.62 in. 3. Alumina = 0.4 x 0.3 x 0.024 in, 99.5% alumina. *Other voltages may be available upon request. ORDERING INFORMATION Device Marking MMBZ16VALT1G 16A SZMMBZ16VALT1G* 16A MMBZ16VTALT1G 16T SZMMBZ16VTALT1G* 16T Package Shipping SOT-23 (Pb-Free) 3,000 / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. www.onsemi.com 2 MMBZ16V, SZMMBZ16V ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) UNIDIRECTIONAL (Circuit tied to Pins 1 and 3 or 2 and 3) Parameter Symbol I IPP Maximum Reverse Peak Pulse Current VC Clamping Voltage @ IPP VRWM IR IF Working Peak Reverse Voltage Maximum Reverse Leakage Current @ VRWM VBR Breakdown Voltage @ IT IT VC VBR VRWM QVBR Maximum Temperature Coefficient of VBR IF Forward Current VF Forward Voltage @ IF ZZT Maximum Zener Impedance @ IZT IZK Reverse Current ZZK Maximum Zener Impedance @ IZK V IR VF IT Test Current IPP Uni-Directional TVS ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) UNIDIRECTIONAL (Circuit tied to Pins 1 and 3 or Pins 2 and 3) (VF = 0.9 V Max @ IF = 10 mA) (5% Tolerance) 40 WATTS Device* MMBZ16VALT1G Device Marking 16A VC @ IPP (Note 5) Breakdown Voltage VRWM IR @ VRWM Volts nA Min Nom 13 50 15.20 16 VBR (Note 4) (V) @ IT VC IPP QVBR Max mA V A mV/5C 16.80 1.0 23 1.7 13.8 (VF = 0.9 V Max @ IF = 10 mA) (2% Tolerance) 40 WATTS Device* MMBZ16VTALT1G Device Marking 16T VC @ IPP (Note 5) Breakdown Voltage VRWM IR @ VRWM @ IT VC IPP QVBR Volts nA Min Nom Max mA V A mV/5C 13 50 15.68 16 16.32 1.0 23 1.7 13.8 VBR (Note 4) (V) Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. VBR measured at pulse test current IT at an ambient temperature of 25C. 5. Surge current waveform per Figure 5 and derate per Figure 6 * Include SZ-prefix devices where applicable. www.onsemi.com 3 MMBZ16V, SZMMBZ16V TYPICAL CHARACTERISTICS 1000 18 100 15 10 12 IR (nA) BREAKDOWN VOLTAGE (VOLTS) (VBR @ IT) 21 9 1 6 0.1 3 0 -40 0 + 50 + 100 TEMPERATURE (C) 0.01 -40 + 150 Figure 1. Typical Breakdown Voltage versus Temperature + 85 + 25 TEMPERATURE (C) + 125 Figure 2. Typical Leakage Current versus Temperature (Upper curve is for bidirectional mode, lower curve is for unidirectional mode) 300 90 PD, POWER DISSIPATION (mW) C, CAPACITANCE (pF) 80 70 60 50 40 30 20 10 0 250 ALUMINA SUBSTRATE 200 150 100 FR-5 BOARD 50 0 BIAS (V) 75 100 125 TEMPERATURE (C) Figure 3. Typical Capacitance versus Bias Voltage Figure 4. Steady State Power Derating Curve 0 1 2 3 0 (Upper curve is for unidirectional mode, lower curve is for bidirectional mode) www.onsemi.com 4 25 50 150 175 MMBZ16V, SZMMBZ16V PULSE WIDTH (tP) IS DEFINED AS THAT POINT WHERE THE PEAK CURRENT DECAYS TO 50% OF IPP. tr 10 ms 100 VALUE (%) PEAK VALUE - IPP IPP HALF VALUE - 2 50 tP 0 0 1 2 3 t, TIME (ms) 4 PEAK PULSE DERATING IN % OF PEAK POWER OR CURRENT @ TA = 25C TYPICAL CHARACTERISTICS 100 90 80 70 60 50 40 30 20 10 0 0 25 Figure 5. Pulse Waveform RECTANGULAR WAVEFORM, TA = 25C Ppk, PEAK SURGE POWER (W) Ppk, PEAK SURGE POWER (W) Figure 6. Pulse Derating Curve BIDIRECTIONAL 1 200 100 100 10 50 75 100 125 150 175 TA, AMBIENT TEMPERATURE (C) UNIDIRECTIONAL 0.1 1 10 100 RECTANGULAR WAVEFORM, TA = 25C BIDIRECTIONAL 10 UNIDIRECTIONAL 1 1000 0.1 1 10 100 PW, PULSE WIDTH (ms) PW, PULSE WIDTH (ms) Figure 7. Maximum Non-repetitive Surge Power, Ppk versus PW Figure 8. Maximum Non-repetitive Surge Power, Ppk(NOM) versus PW Power is defined as VZ(NOM) x IZ(pk) where VZ(NOM) is the nominal Zener voltage measured at the low test current used for voltage classification. Power is defined as VRSM x IZ(pk) where VRSM is the clamping voltage at IZ(pk). www.onsemi.com 5 1000 MMBZ16V, SZMMBZ16V TYPICAL COMMON ANODE APPLICATIONS A dual junction common anode design in a SOT-23 package protects two separate lines using only one package. This adds flexibility and creativity to PCB design especially when board space is at a premium. Two simplified examples of TVS applications are illustrated below. Computer Interface Protection A KEYBOARD TERMINAL PRINTER ETC. B C I/O D FUNCTIONAL DECODER GND SZMMBZ16VALT1G Thru SZMMBZ16VTALT1G Microprocessor Protection VDD VGG ADDRESS BUS RAM ROM DATA BUS SZMMBZ16VALT1G Thru SZMMBZ16VTALT1G CPU I/O CLOCK CONTROL BUS GND SZMMBZ16VALT1G Thru SZMMBZ16VTALT1G www.onsemi.com 6 MMBZ16V, SZMMBZ16V PACKAGE DIMENSIONS SOT-23 (TO-236) CASE 318-08 ISSUE AR D 0.25 3 E 1 2 T HE NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF THE BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. DIM A A1 b c D E e L L1 HE T L 3X b L1 VIEW C e TOP VIEW A A1 SIDE VIEW c SEE VIEW C MIN 0.89 0.01 0.37 0.08 2.80 1.20 1.78 0.30 0.35 2.10 0_ MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.14 0.20 2.90 3.04 1.30 1.40 1.90 2.04 0.43 0.55 0.54 0.69 2.40 2.64 --- 10 _ MIN 0.035 0.000 0.015 0.003 0.110 0.047 0.070 0.012 0.014 0.083 0_ INCHES NOM MAX 0.039 0.044 0.002 0.004 0.017 0.020 0.006 0.008 0.114 0.120 0.051 0.055 0.075 0.080 0.017 0.022 0.021 0.027 0.094 0.104 --- 10 _ STYLE 12: PIN 1. CATHODE 2. CATHODE 3. ANODE END VIEW RECOMMENDED SOLDERING FOOTPRINT* 3X 2.90 3X 0.90 0.95 PITCH 0.80 DIMENSIONS: MILLIMETERS *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. 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