Standard Power MOSFETs BUZ 41A N-Channel Enhancement-Mode Power Field-Effect Transistors File Number 2256 4.5 A, 500 V N-CHANNEL ENHANCEMENT MODE loston = 1.5.Q Features: m SOA is power-dissipation limited a Nanosecond switching speeds a Linear transfer characteristics a High input impedance a Majority carrier device S s 92CS-33741 The BUZ 41 A is an n-channel enhancement-mode silicon- TERMINAL DIAGRAM gate power field-effect transistor designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high-power bipoiar ' switching transistors requiring high speed and low gate- TERMINAL DESIGNATION drive power. This type can be operated directly from inte- grated circuits. SOURCE The BUZ 41 A is supplied in the JEDEC TO-220AB plastic oRAIN _ pt DRAIN package. (FLANGE) C) pee TOP VIEW GATE 92CS-39526 JEDEC TO-220AB MAXIMUM RATINGS, Absoiute-Maximum Values (Tc = 25C): DRAIN-SOURCE VOLTAGE 2.0... 00. cece ccc e cece eee cece een n tee nett er eene ee 500 Vv DRAIN-GATE VOLTAGE, Ros = 20 KQ. 00... e eee cect ee eee eens 500 Vv GATE-SOURCE VOLTAGE ...........0 2.2 cece e eee ences +20 V DRAIN GURRENT, RMS Continuous Tc = 35 C 45 A Pulsed To = 25 C 2... eee eee eee ee 18 A POWER DISSIPATION @ Te = 25C oo eect teeter ern tenet een n ene eee 75 Ww. OPERATING AND STORAGE TEMPERATURE ........-- 0. cece creer eee e eee nenees Tj, Tota -55 to +150 C DIN HUMIDITY CATEGORY DIN 40040 E IEC CLIMATIC CATEGORY DIN IEC 68-1 2.0.0... cece ccc e rene r ene t renee 55/150/56 3-10Standard Power MOSFETs BUZ41A ELECTRICAL CHARACTERISTICS At Case Temperature (Tc) = 25C Unless Otherwise Specified LIMITS CHARACTERISTIC TEST CONDITIONS NIT: MIN. TYP. MAX. UNITS Drain-Source Breakdown Voltage BVoss Ves =OV _ 7: 500 _ _ !o = 0.25 mA v Gate-Threshold Voltage Vesars Vos = Ves = 4 2.1 3 4 Ip = 1mA Zero-Gate Voltage Drain Current loss Ti = 25C _ 20 250 T= 125C _ 100 1000 vA Vos = 500 V, Ves =O V Gate-Source Leakage Current less Ves = 20V _ 10 100 nA Vos = OV Drain-Source On Resistance Tostom Ves = 10V _ 14 15 a lb =2.5A Forward Transconductance Gis Vos - =25V 15 25 _ S ln =2.5A Input Capacitance Cis Ves = 0V _ 1500 2000 Output Capacitance Coss Vos = 25 V _ 410 170 pF Reverse Transfer Capacitance Cres f= 1 MHz 40 70 Turn-On Time ton tation Vee =: 30 V - 30 45 (ton = tatom + tr) t lp = 26A _ 40 60 Vos = 10 V ns Turn-Off Time tor taro ss _ 110 140 = Res = 50 a (tort = taom + te) t 50 65 Thermal Resistance, Junction-to-Case Reic <= 1.67 C/W Thermal Resistance, Junction-to-Ambient Raa =75 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS TEST CONDITIONS LIMITS UNITS CHARACTERISTIC i MIN. TYP. MAX i i _ 45 Continuous Reverse Drain Current lon To= 25C A Pulsed Reverse Drain Current lpnm _- _ 18 Diode Forward Voltage Vsp le =2 x Iba _ 1 1 Vv Ves = OV, T) = 25C . 5 Reverse Recovery Time ter Tj = 25C, le = loa _ 1200 _ ns Reverse Recovered Charge Qaa [dle/dt = 100 A/ys, Va= 100V) 6 - uc 10? = 2 wi DRAIN CURRENT (/o} A = 3 > u f of O= T 10 10 5 10 5 10? 5 10? DRAIN-TO-SOURCE VOLTAGE (Vps) V Fig. 1 - Maximum safe operating areas for all types. 3-11Standard Power MOSFETs BUZ41A 80 70 D> Oo wn Qo POWER DISSIPATION (Pr) W w oa Oo nn o 3 0 0 50 100 150 CASE TEMPERATURE (Te) C Fig. 2 - Power vs. temperature derating curve for all types. DRAIN-TO-SOURCE ON RESISTANCE {tpg (om a Led 0 -50 0 $0 100 150 JUNCTION TEMPERATURE (Tj) C Fig. 4 - Normalized drain-to-source on resistance to junction temperature for aif types. 10 80 ys PULSE T 9 T, 25C Y= 8 Gs v << | 7 a = 6 6,0V 2 5 3 5,5V Oo 4 Zz < o 3 5,0V 2 45V 1 4,0V 0 10 20 30 40 50 60 DRAIN-TO-SOURCE VOLTAGE (Vas) ~- V Fig. 6 - Typical output characteristics. 3-12 GATE THRESHOLD VOLTAGE [gg (thi ~ Q -50 0 50 100 150 JUNCTION TEMPERATURE (Ty) C Fig. 3 - Normalized gate threshold voltage as a function of junction temperature for aif types. 7 80 us PULSE TEST A {Vos = 25 V, T,= 25C a ON-STATE DRAIN CURRENT [lovon} A N w uw = Q 5 10 GATE-TO-SOURCE VOLTAGE (Vas) V Fig. 5 - Typical transfer characteristics for all types. 5 80 ys PULSE TEST Vos = 25 V, T, = 25C r w TRANSCONDUCTANCE (gis) S oxy _ 0 1 2 3 4 5 6 7 DRAIN CURRENT (lo) A Fig. 7 - Typical transconductance vs. drain current.THERMAL RESPONSE (Zinc) Standard Power MOSFETs BUZ 41A 10 Ves = 0, f = 1 MHz Ves, T) = 25C 4 VeseSV S5V) 6v | 65V = So o w CAPACITANCE (C) nF 3 DRAIN-TO-SOURCE ON RESISTANCE (rosiom) 2 wi 10? 0 2 4 6 8 10 0 10 20 30 40 DRAIN CURRENT (Ip) ~ A ORAIN-TO-SOURCE VOLTAGE (Vos) V Fig. 8 - Typical on-resistance vs. drain current. Fig. 9 - Typical capacitance vs. drain-to-source voltage. 2 Ves 2 10V 10 80 42s PULSE TEST 5 Ty= 150C TYP. ri < | 4 3 % 101 5 Zz a 5 Fa = Ty= 25C TYP, z a z 3 & z a = # 100 5 d 5 10-1 0 50 400 150 0 0.5 1.0 1.5 20 2.5 3.0 CASE TEMPERATURE (Te) C SOQURCE-TO-ORAIN VOLTAGE (Wgp) Vv Fig. 10 - Maximum drain current vs. case temperature. Fig. 11 - Typical source-drain diode forward voltage. > | 40 2 lu s 2 < a > WW 10" fz 2D Po 4 3 5 t e Dee f+ A T E < G 7, - 10 5 10% 5 103 5 10? 5 107 5 10 40! 0 10 20 30 RECTANGULAR PULSE DURATION (t1) S TOTAL GATE CHARGE (Qe) nC Fig. 12 - Maximum effective transient thermal impedance, junction- Fig. 13 - Typical gate charge vs. gate-to-source voltage. to-case vs. pulse duration. 3-13 40