BCX54 BCX55 BCX56 SOT89 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 3 - FEBRUARY 1996 PARTMARKING DETAILS:BCX54 - BA BCX54-10 - BC BCX55 - BE BCX55-10 - BG BCX56 - BH BCX56-10 - BK C BCX54-16 - BD BCX55-16 - BM BCX56-16 - BL E COMPLEMENTARY TYPES:BCX54 - BCX51 BCX55 - BCX52 C BCX56 - BCX53 B ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL BCX54 BCX55 BCX56 Collector-Base Voltage VCBO Collector-Emitter Voltage VCEO 45 60 100 V 45 60 80 Emitter-Base Voltage VEBO 5 V V Peak Pulse Current ICM 2 A Continuous Collector Current IC 1 A Power Dissipation at Tamb=25C Ptot 1 W -65 to +150 C Operating and Storage Temperature Range Tj:Tstg UNIT ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Collector-Base Breakdown Voltage BCX54 BCX55 BCX56 V(BR)CBO 45 60 100 V IC =100A Collector-Emitter Breakdown Voltage BCX54 BCX55 BCX56 V(BR)CEO 45 60 80 V IC =10mA* 5 Emitter-Base Breakdown Voltage V(BR)EBO V IE =10A Collector Cut-Off Current ICBO 0.1 20 A A VCB =30V VCB =30V, Tamb =150C Emitter Cut-Off Current IEBO 20 nA VEB =4V 0.5 V IC =500mA, IB =50mA* 1.0 V Collector-Emitter Saturation Voltage VCE(sat) Base-Emitter Turn-On Voltage VBE(on) Static Forward Current Transfer Ratio hFE -10 -16 Transition Frequency fT Output Capacitance Cobo 25 40 25 63 100 250 160 250 150 MHz IC =50mA, VCE =10V, f=100MHz 15 pF *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% 3 - 35 IC =500mA, VCE =2V* IC =5mA, VCE =2V* IC =150mA, VCE =2V* IC =500mA, VCE =2V* IC =150mA, VCE =2V* IC =150mA, VCE =2V* VCB =10V, f=1MHz