SOT89 NPN SILICON P LANAR
MEDIUM POWER TRANSISTORS
ISSUE 3 – FEBRUARY 1996 ✪
PARTMARKING DET AILS:-
BCX54 – BA BCX54-10 – BC BCX54-16 – BD
BCX55 – BE BCX55-10 – BG BCX55-16 – BM
BCX56 – BH BCX56-10 – BK BCX56-16 – BL
COMPLEMENTARY TYPES:-
BCX54 – BCX51 BCX55 – BCX52 BCX56 – BCX53
ABSOLU TE MAXIM UM RATIN GS.
PARAMETER SYMBOL BCX54 BCX55 BCX56 UNIT
Collector-Base Voltage VCBO 45 60 100 V
Collector-Emitter Voltage VCEO 45 60 80 V
Emitter-Base Voltage VEBO 5V
Peak Pulse Current ICM 2A
Continuous Collector Current IC1A
Power Dissipation at Tamb
=25°C Ptot 1W
Operating and Storage Temperature Range Tj:Tstg -65 to +150 °C
ELECTRIC AL CH ARA CTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base Breakdown
Voltage BCX54
BCX55
BCX56
V(BR)CBO 45
60
100 VIC =1 00µA
Collector-Emitter
Breakdown Voltage BCX54
BCX55
BCX56
V(BR)CEO 45
60
80 VI
C =10mA*
Emitter- Ba se Break down Voltage V(BR)EBO 5V
IE =10µA
Collector Cut-Off Current ICBO 0.1
20 µA
µAVCB =30V
VCB =30V, Tamb =150°C
Emitter Cut-Off Current IEBO 20 nA VEB =4V
Collector-Emitter Saturation Voltage VCE(sat) 0.5 V IC =500mA, IB =50mA*
Base-Emitter Turn-On Voltage VBE(on) 1.0 V IC =500mA, VCE =2V*
Static Forward Current Transfer
Ratio hFE
–10
–16
25
40
25
63
100
250
160
250
IC =5mA, VCE =2V*
IC =150mA, VCE =2V*
IC =500mA, VCE =2V*
IC =150mA, VCE =2V*
IC =150mA, VCE =2V*
Transition Frequency fT150 MHz IC =50mA, VCE =10V,
f=100MHz
Output Capacitance Cobo 15 pF VCB =10V, f=1MHz
*Measur ed under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
BCX54
BCX55
BCX56
C
C
B
E
3 - 35
