g y, , H11C4/H11C5/H11C6 Photo SCR Optocoupler Dimensions in Inches (mm) FEATURES * Turn On Current (IFT), 5.0 mA Typical * Gate Trigger Current (IGT), 20 mA Typical * Surge Anode Current, 5.0 A * Blocking Voltage, 400 V Gate Trigger Voltage (VGT), 0.6 V Typical * Isolation Voltage, 5300 VRMS * Solid State Reliability * Standard DIP Package * Underwriters Lab File #E52744 3 pin one ID 1 .248 (6.30) .256 (6.50) 6 Gate Anode 1 4 5 .039 (1.00) Min. 5 Anode Cathode 2 6 .335 (8.50) .343 (8.70) DESCRIPTION The H11C4/H11C5/H11C6 are optically coupled SCRs with a Gallium Arsenide infrared emitter and a silicon photo SCR sensor. Switching can be achieved while maintaining a high degree of isolation between triggering and load circuits. These optocouplers can be used in SCR triac and solid state relay applications where high blocking voltages and low input current sensitivity are required. 2 4 Cathode NC 3 .300 (7.62) typ. .048 (0.45) .022 (0.55) .130 (3.30) .150 (3.81) 18 4 typ. .031 (0.80) min. 3-9 .031 (0.80) .035 (0.90) .018 (0.45) .022 (0.55) .100 (2.54) typ. .114 (2.90) .130 (3.0) .010 (.25) typ. .300-.347 (7.62-8.81) Characteristics TA=25C Parameters Sym Min. Typ. Max. Unit Condition Emitter IF=10 mA The H11C4 and H11C5 has a maximum turn-on-current of 11 mA. The H11C6 has a maximum of 14 mA. Forward Voltage VF -- 1.2 1.5 V Reverse Current IR -- Maximum Ratings Emitter Peak Reverse Voltage ...................................... 6.0 V Continuous Forward Current ..........................60 mA Peak Forward Current (1.0 ms, 1% Duty Cycle).....3.0 A Power Dissipation at 25C........................... 100 mW Derate Linearly from 25C ..................... 1.33 mW/C Detector Reverse Gate Voltage....................................... 6.0 V Anode Voltage (DC or AC Peak) ..................... 400 V RMS Forward Current...................................300 mA Surge Anode Current (10 ms duration) ............5.0 A Peak Forward Current (100 s, 1% Duty Cycle)... 10 A Surge Gate Current (5.0 ms duration)..........200 mA Power Dissipation, 25C case ................... 1000 mW Derate Linearly from 25C ..................... 13.3 mW/C Package Isolation Test Voltage............................... 5300 VRMS (between emitter and detector referred to Standard Climate23C/50%RH, DIN 50014) Creepage .............................................. min.7.0 mm Clearance ............................................. min. 7.0 mm Comparative Tracking Index per DIN IEC 112/VDE 0303, part 1 ....................... 175 Isolation Resistance VIO=500 V, TA=25C................................ 1012 VIO=500 V, TA=100C.............................. 1011 Total Package Dissipation ........................... 400 mW Derate Linearly from 25C ....................... 5.3 mW/C Operating Temperature Range...... -55C to +100C Storage Temperature Range ......... -55C to +150C Lead Soldering Time at 260C ..................... 10 sec. Capacitance CO -- -- 10 A VR=3.0 V 50 -- pF VR=0, f=1.0 MHz Forward Blocking Voltage VDM 400 -- -- V Reverse Blocking Voltage VDM 400 -- -- V Id=150 A On-state Voltage Vt IH -- 1.1 1.3 V IT=300 mA -- -- 500 A RGK=27 K VFX=50 V Gate Trigger Voltage VGT -- 0.6 1.0 V VFX=100 V RGK=27 K RL=10 K Forward Leakage Current IR -- 150 -- A RGK=10 K VRM=400 V IF=0, TA=100C Reverse Leakage Current IR -- 150 -- A RGK=10 K VRX=400 V IF=0, TA=100C Gate Trigger Current IGT -- 20 50 A VFX=100 V RGK=27 K, RL=10 K Capacitance Anode to Gate Gate to Cathode -- -- pF pF V=0, f=1.0 MHz 20 30 mA mA VDM=50 V RGK=10 K 11 14 mA mA VDM=100 V RGK=27 K Detector Holding Current RGK=10 K TA=100C -- 20 350 Package Turn-0n Current H11C4/H11C5 H11C6 IFT -- Turn-0n Current H11C4/H11C5 H11C6 IFT -- Infineon Technologies, Corp. * Optoelectronics Division * Cupertino, CA (formerly Siemens Microelectronics, Inc.) www.infineon.com/opto * 1-800-777-4363 1 -- 5.0 7.0 June 28, 1999