©
1993
DATA SHEET
MOS FIELD EFFECT TRANSIST OR
3SK224
FEATURES
• Low Noise Figure: NF = 1.8 dB TYP. (f = 900 MHz)
• High Power Gain: GPS = 17 dB TYP. (f = 900 MHz)
• Suitable for use as RF amplifier in UHF TV tuner.
• Automatically Mounting: Embossed Type Taping
• Small Package: 4 Pins Mini Mold
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Drain to Source Voltage VDSX 18 V
Gate1 to Source Voltage VG1S ±8 (±10)*1 V
Gate2 to Source Voltage VG2S ±8 (±10)*1 V
Gate1 to Drain Voltage VG1D 18 V
Gate2 to Drain Voltage VG2D 18 V
Drain Current ID25 mA
Total Power Dissipation PD200 mW
Channel Temperature Tch 125 °C
Storage Temperature Tstg –55 to +125 °C
*1 RL ≥ 10 kΩ
RF AMPLIFIER FOR UHF TV TUNER
N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR
4 PINS MINI MOLD
Document No. P10576EJ2V0DS00 (2nd edition)
(Previous No. TD-2265)
Date Published August 1995 P
Printed in Japan
2.8
+0.2
–0.1
1.5
+0.2
–0.1
0.4
+0.1
–0.05
0.4
+0.1
–0.05
0.6
+0.1
–0.05
0.4
+0.1
–0.05
1.1
+0.2
–0.1
0.16
+0.1
–0.06
0.8
0 to 0.1
5° 5°
5° 5°
2.9±0.2
(1.8)
(1.9)
0.950.85
12
43
1. Source
2. Drain
3. Gate 2
4. Gate 1
PACKAGE DIMENSIONS
(Unit: mm)
1989
3SK224
2
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS
Drain to Source Breakdown BVDSX 18 V VG1S = VG2S = –2 V, ID = 10
µ
A
Voltage
Drain Current IDSX 0.5 15.0 mA VDS = 6 V, VG2S = 3 V, VG1S = 0.5 V
Gate1 to Source Cutoff VG1S(off) –1.5 +0.5 V VDS = 6 V, VG2S = 3 V, ID = 10
µ
A
Voltage
Gate2 to Source Cutoff VG2S(off) –1.0 +1.0 V VDS = 6 V, VG1S = 3 V, ID = 10
µ
A
Voltage
Gate1 Reverse Current IG1SS ±20 nA VDS = 0, VG2S = 0, VG1S = ±8 V
Gate2 Reverse Current IG2SS ±20 nA VDS = 0, VG1S = 0, VG2S = ±8 V
Forward Transfer |yfs|1822 mSVDS = 5 V, VG2S = 4 V, ID = 10 mA
Admittance f = 1 kHz
Input Capacitance Ciss 1.2 1.7 2.2 pF
Output Capacitance CDSS 0.5 0.9 1.2 pF
Reverse Transfer Crss 0.015 0.025 pF
Capacitance
Power Gain GPS 15.0 17.0 dB
Noise Figure NF 1.8 2.5 dB
IDSX Classification
Class U94/UID*U95/UIE*
Marking U94 U95
IDSX (mA) 0.5 to 7.0 5.0 to 15.0
* Old Specification/New Specification
PRECAUTION: Avoid high static voltages or electric fields so that this device would not suffer from any damage due
to those voltage or fields.
VDS = 6 V, VG2S = 3 V, ID = 10 mA
f = 1 MHz
VDS = 6 V, VG2S = 3 V, ID = 10 mA
f = 900 MHz
3SK224
3
TYPICAL CHARACTERISTICS (TA = 25 °C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
400
300
200
100
0 25 50 75 100 125
T
A
– Ambient Temperature – °C
P
T
– Total Power Dissipation – mW
–0.5 0 0.5 1.0 1.5 2.0
V
G1S
– Gate1 to Source Voltage – V
I
D
– Drain Current – mA
25
20
15
10
5
0
DRAIN CURRENT vs.
GATE1 TO SOURCE VOLTAGE
2.0 V
1.5 V
1.0 V
0.5 V
V
G2S
= 3.0 V
2.5 V
V
DS
= 6 V
–0.5 0 0.5 1.0 1.5 2.0
V
G1S
– Gate1 to Source Voltage – V
|y
fs
| – Forward Transfer Admittance – mS
40
32
24
16
8
0
FORWARD TRANSFER ADMITTANCE vs.
GATE1 TO SOURCE VOLTAGE
1.5 V
1.0 V
0.5 V
V
G2S
= 3.0 V
0 3 6 9 12 15
V
DS
– Drain to Source Voltage – V
I
D
– Drain Current – mA
25
20
15
10
5
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
1.2 V
0.8 V
0.6 V
0.4 V
V
G1S
= 1.4 V
1.0 V
V
G2S
= 3 V
0 4 8 121620
I
D
– Drain Current – mA
|y
fs
| – Forward Transfer Admittance – mS
40
32
24
16
8
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
2.0 V
1.5 V
1.0 V
0.5 V
V
G2S
= 3.0 V
V
DS
= 6 V
f = 1 kHz
2.5 V
0.2 V
V
DS
= 6 V
f = 1 kHz
2.0 V
2.5 V
–1.0 0 1.0 2.0 3.0 4.0
V
G2S
– Gate2 to Source Voltage – V
C
iss
– Input Capacitance – pF
5.0
4.0
3.0
2.0
1.0
0
INPUT CAPACITANCE vs.
GATE2 TO SOURCE VOLTAGE
I
D
= 10 mA
(at V
DS
= 6 V
V
G2S
= 3 V)
f = 1 MHz
3SK224
4
I
D
= 10 mA
(at V
DS
= 6 V
V
G2S
= 3 V)
f = 1 MHz
OUTPUT CAPACITANCE vs.
GATE2 TO SOURCE VOLTAGE
2.5
2.0
1.5
1.0
0.5
0
–1.0 0 1.0 2.0 3.0 4.0
V
G2S
– Gate2 to Source Voltage – V
C
DSS
– Output Capacitance – pF
POWER GAIN AND NOISE FIGURE vs.
GATE2 TO SOURCE VOLTAGE
10
5
0–2.0 0 2.0 4.0 6.0 8.0
V
G2S
– Gate2 to Source Voltage – V
G
PS
– Power Gain – dB
NF – Noise Figure – dB
20
10
0
–10
–20
f = 900 MHz
I
D
= 10 mA
(at V
DS
= 6 V
V
G2S
= 3 V)
G
ps
NF
900 MHz GPS & NF TEST CIRCUIT
V
G2S
1 000 pF
47 kΩ
1 000 pF
1 000 pF 1 000 pF
V
DD
V
G1S
L
1
, L
2
: 35 × 5 × 0.2 mm
OUTPUT
50 Ω
INPUT
50 Ω
47 kΩ
to 10 pF
to 10 pF
to 10 pF
to 10 pF
L
1
L
2
RFC
3SK224
5
[MEMO]
2
3SK224
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Anti-radioactive design is not implemented in this product.
M4 94.11