DATA SHEET MOS FIELD EFFECT TRANSISTOR 3SK224 RF AMPLIFIER FOR UHF TV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD FEATURES PACKAGE DIMENSIONS (Unit: mm) 8 (10)*1 V Gate1 to Drain Voltage VG1D 18 V Gate2 to Drain Voltage VG2D 18 V Drain Current ID 25 mA Total Power Dissipation PD 200 mW Channel Temperature Tch 125 C Storage Temperature Tstg -55 to +125 C *1 RL 10 k Document No. P10576EJ2V0DS00 (2nd edition) (Previous No. TD-2265) Date Published August 1995 P Printed in Japan (1.9) 4 5 5 +0.1 8 5 1. 2. 3. 4. 0 to 0.1 VG1S VG2S 1 V Gate1 to Source Voltage Gate2 to Source Voltage +0.1 V (10)*1 0.6-0.05 18 2.90.2 (1.8) 0.85 0.95 VDSX +0.2 Drain to Source Voltage 1.1-0.1 0.8 ABSOLUTE MAXIMUM RATINGS (TA = 25 C) +0.1 4 Pins Mini Mold 0.4-0.05 * Small Package: 2 Embossed Type Taping +0.1 * Automatically Mounting: +0.2 2.8-0.1 +0.2 1.5-0.1 0.4-0.05 * Suitable for use as RF amplifier in UHF TV tuner. 0.16-0.06 GPS = 17 dB TYP. (f = 900 MHz) 3 * High Power Gain: +0.1 NF = 1.8 dB TYP. (f = 900 MHz) 0.4-0.05 * Low Noise Figure: 5 Source Drain Gate 2 Gate 1 (c) 1989 1993 3SK224 ELECTRICAL CHARACTERISTICS (TA = 25 C) CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT V TEST CONDITIONS VG1S = VG2S = -2 V, ID = 10 A Drain to Source Breakdown Voltage BVDSX 18 Drain Current IDSX 0.5 15.0 mA Gate1 to Source Cutoff Voltage VG1S(off) -1.5 +0.5 V VDS = 6 V, VG2S = 3 V, ID = 10 A Gate2 to Source Cutoff Voltage VG2S(off) -1.0 +1.0 V VDS = 6 V, VG1S = 3 V, ID = 10 A Gate1 Reverse Current IG1SS 20 nA VDS = 0, VG2S = 0, VG1S = 8 V Gate2 Reverse Current IG2SS 20 nA VDS = 0, VG1S = 0, VG2S = 8 V Forward Transfer Admittance |yfs| 18 22 mS VDS = 5 V, VG2S = 4 V, ID = 10 mA f = 1 kHz Input Capacitance Ciss 1.2 1.7 2.2 pF Output Capacitance CDSS 0.5 0.9 1.2 pF VDS = 6 V, VG2S = 3 V, ID = 10 mA f = 1 MHz Reverse Transfer Crss 0.015 0.025 pF VDS = 6 V, VG2S = 3 V, VG1S = 0.5 V Capacitance Power Gain GPS Noise Figure NF 15.0 17.0 1.8 dB 2.5 dB VDS = 6 V, VG2S = 3 V, ID = 10 mA f = 900 MHz IDSX Classification Class U94/UID* U95/UIE* Marking U94 U95 IDSX (mA) 0.5 to 7.0 5.0 to 15.0 * Old Specification/New Specification PRECAUTION: Avoid high static voltages or electric fields so that this device would not suffer from any damage due to those voltage or fields. 2 3SK224 TYPICAL CHARACTERISTICS (TA = 25 C) DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE ID - Drain Current - mA PT - Total Power Dissipation - mW TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 400 300 200 25 1.2 V 20 1.0 V 15 0.8 V 10 0.6 V 5 0 100 VG1S = 1.4 V VG2S = 3 V 3 6 9 0.4 V 0.2 V 12 15 VDS - Drain to Source Voltage - V 0 25 50 75 100 125 25 VDS = 6 V VG2S = 3.0 V 2.5 V 20 2.0 V 1.5 V 15 1.0 V 10 5 0.5 V 0 -0.5 0 0.5 1.0 1.5 2.0 |yfs| - Forward Transfer Admittance - mS VG1S - Gate1 to Source Voltage - V FORWARD TRANSFER ADMITTANCE vs. GATE1 TO SOURCE VOLTAGE 40 VDS = 6 V f = 1 kHz 32 VG2S = 3.0 V 24 2.5 V 16 2.0 V 1.5 V 1.0 V 8 0.5 V 0 -0.5 40 5.0 32 VG2S = 3.0 V 2.0 V 2.5 V 16 1.5 V 8 0 1.0 V 0.5 V 4 8 12 ID - Drain Current - mA 16 0.5 1.0 1.5 2.0 INPUT CAPACITANCE vs. GATE2 TO SOURCE VOLTAGE VDS = 6 V f = 1 kHz 24 0 VG1S - Gate1 to Source Voltage - V FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 20 Ciss - Input Capacitance - pF ID - Drain Current - mA DRAIN CURRENT vs. GATE1 TO SOURCE VOLTAGE |yfs| - Forward Transfer Admittance - mS TA - Ambient Temperature - C 4.0 ID = 10 mA (at VDS = 6 V VG2S = 3 V) f = 1 MHz 3.0 2.0 1.0 0 -1.0 0 1.0 2.0 3.0 4.0 VG2S - Gate2 to Source Voltage - V 3 OUTPUT CAPACITANCE vs. GATE2 TO SOURCE VOLTAGE 2.5 ID = 10 mA (at VDS = 6 V VG2S = 3 V) f = 1 MHz 2.0 POWER GAIN AND NOISE FIGURE vs. GATE2 TO SOURCE VOLTAGE f = 900 MHz ID = 10 mA 20 (at VDS = 6 V Gps VG2S = 3 V) 1.5 1.0 5 GPS - Power Gain - dB 10 NF - Noise Figure - dB CDSS - Output Capacitance - pF 3SK224 10 0 -10 0.5 NF -20 0 -1.0 0 0 1.0 2.0 3.0 4.0 -2.0 VG2S - Gate2 to Source Voltage - V 0 2.0 4.0 VG2S - Gate2 to Source Voltage - V 900 MHz GPS & NF TEST CIRCUIT VG2S 1 000 pF 47 k 1 000 pF to 10 pF to 10 pF INPUT 50 to 10 pF to 10 pF OUTPUT 50 L2 L1 47 k 1 000 pF VG1S 4 6.0 RFC 1 000 pF L1, L2: 35 x 5 x 0.2 mm VDD 8.0 3SK224 [MEMO] 5 3SK224 No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. 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Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices in "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact NEC Sales Representative in advance. Anti-radioactive design is not implemented in this product. M4 94.11 2