50
VTP Process Photodiodes VTP1112H
PRODUCT DESCRIPTION
Small area planar silicon photodiode in a
lensed. dual lead TO-46 package. Cathode is
common to the case. These diodes exhibit low
dark current under reverse bias and fast speed
of response.
PACKAGE DIMENSIONS inch (mm)
CASE 19 TO-46 LENSED HERMETIC
CHIP ACTIVE AREA: .0025 in
2
(1.6 mm
2
)
ABSOLUTE MAXIMUM RATINGS
Storage Temperature: -40°C to 110°C
Ope rati ng Temp eratur e: -40°C to 110 °C
ELECTRO-OPTICAL CHARACTERISTICS @ 25°C ( See also VTP curves, pa ges 45-46)
SYMBOL CHARACTERISTIC TEST CONDITIONS VTP1112H UNITS
Min. Typ. Max.
ISC Short Circuit Current H = 100 fc, 2850 K 30 90 µA
TC ISC ISC Temperature Coefficient 2850 K .20 %/°C
VOC Open Circuit Voltage H = 100 fc , 2850 K 350 mV
TC V OC VOC Temperature Coefficient 2850 K -2.0 mV/°C
IDDark Current H = 0, VR = 50 V 7 nA
RSH Shunt Resistance H = 0, V = 10 mV .5 GΩ
CJJunction Capacitance H = 0, V = 15 V 6 pF
Re Responsivity 940 nm .033 A/(W/cm2)
SRSensitivity @ Peak .55 A/W
λrange Spectral Applica tion Range 400 1150 nm
λpSpectral Response - Pea k 925 nm
VBR Breakdown Voltage 50 140 V
θ1/2 Angular Resp. - 50% Resp. Pt. ±15 Degrees
NEP Noise Equivalent Power 8. 7 x 10-14 (Typ.)
D* Specific Detectivity 1.5 x 10 12 (Typ.) WHz⁄
cm Hz W⁄
PerkinElmer Optoelectronics, 22001 Dumberry, Vaudreuil, Canada J7V 8P7 Phone: 877-734-6786 Fax: 450-424-3413 www.perkinelmer.com/opto
RoHS Compliant
