SD101AW-G3-18 - Vishay Semiconductors

SD101AW, SD101BW, SD101CW

www.vishay.com Vishay Semiconductors

Rev. 1.8, 25-Feb-13 1Document Number: 85679

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Small Signal Schottky Diodes

MECHANICAL DATA

Case: SOD-123

Weight: approx. 10.3 mg

Packaging codes/options:

18/10K per 13" reel (8 mm tape), 10K/box

08/3K per 7" reel (8 mm tape), 15K/box

FEATRUES

• For general purpose applications

• The low forward voltage drop and fast switching

make it ideal for protection of MOS devices,

steering, biasing and coupling diodes for fast

switching and low logic level applications

• The SD101 series is a metal-on-silicon Schottky

barrier device which is protected by a PN junction

guardring

• AEC-Q101 qualified

• Base P/N-E3 - RoHS-compliant, commercial grade

• Base P/N-HE3 - RoHS-compliant, AEC-Q101 qualified

• Material categorization: For definitions of compliance

please see www.vishay.com/doc?99912

Note

(1) Valid provided that electrodes are kept at ambient temperature

Note

(1) Valid provided that electrodes are kept at ambient temperature

PARTS TABLE

PART ORDERING CODE INTERNAL

CONSTRUCTION TYPE MARKING REMARKS

SD101AW SD101AW-E3-08 or SD101AW-E3-18 Single diode SA

Tape and reel

SD101AW-HE3-08 or SD101AW-HE3-18

SD101BW SD101BW-E3-08 or SD101BW-E3-18 Single diode SB

SD101BW-HE3-08 or SD101BW-HE3-18

SD101CW SD101CW-E3-08 or SD101CW-E3-18 Single diode SC

SD101CW-HE3-08 or SD101CW-HE3-18

ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)

PARAMETER TEST CONDITION PART SYMBOL VALUE UNIT

Repetitive peak reverse voltage

SD101AW VRRM 60 V

SD101BW VRRM 50 V

SD101CW VRRM 40 V

Power dissipation (infinite heatsink) (1) Ptot 400 mW

Forward continuous current IF30 mA

Maximum single cycle surge 10 μs square wave IFSM 2A

THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)

PARAMETER TEST CONDITION SYMBOL VALUE UNIT

Thermal resistance junction to ambient air (1) RthJA 300 K/W

Junction temperature (1) Tj125 °C

Storage temperature range Tstg - 65 to + 150 °C

Operating ttemperature range Top - 55 to + 125 °C

SD101AW, SD101BW, SD101CW

www.vishay.com Vishay Semiconductors

Rev. 1.8, 25-Feb-13 2Document Number: 85679

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)

Fig. 1 - Typical Variation of Forward Current vs. Forward Voltage

Fig. 2 - Typical Forward Conduction Curve

Fig. 3 - Typical Variation of Reverse Current at Various

Temperatures

Fig. 4 - Typical Capacitance Curve as a Function of Reverse

Voltage

ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)

PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT

Reverse breakdown voltage IR = 10 μA

SD101AW V(BR) 60 V

SD101BW V(BR) 50 V

SD101CW V(BR) 40 V

Leakage current

VR = 50 V SD101AW IR200 nA

VR = 40 V SD101BW IR200 nA

VR = 30 V SD101CW IR200 nA

Forward voltage drop

IF = 1 mA

SD101AW VF410 mV

SD101BW VF400 mV

SD101CW VF390 mV

IF = 15 mA

SD101AW VF1000 mV

SD101BW VF950 mV

SD101CW VF900 mV

Diode capacitance VR = 0 V, f = 1 MHz

SD101AW CD2pF

SD101BW CD2.1 pF

SD101CW CD2.2 pF

Reverse recovery time IF = IR = 5 mA, recover to 0.1 IRtrr 1ns

0.01

0.1

0 0.4 0.6 0.8 1.00.2

I - Forward Current (mA)

VF- Forward Voltage (V)

18477

0 0.4 0.6 0.8 1.00.2

100

I - Forward Current (mA)

- Forward Voltage (V)

18478

100

0.1

0.01 10 20 30 40050

75 °C

50 °C

25 °C

125 °C

100 °C

VR- Reverse Voltage (V)

I - Reverse Current (µA)

18479

18480

10 20 30 400

1.0

1.2

1.4

1.6

1.8

2.0

0.6

0.8

0.2

0.4

Tj= 25 °C

CBA

C - Typical Capacitance (pF)

VR- Reverse Voltage (V)

SD101AW, SD101BW, SD101CW

www.vishay.com Vishay Semiconductors

Rev. 1.8, 25-Feb-13 3Document Number: 85679

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

PACKAGE DIMENSIONS in millimeters (inches): SOD-123

0.1 (0.004) max.

2.85 (0.112)

2.55 (0.100)

3.85 (0.152)

3.55 (0.140)

1.7 (0.067)

1.40 (0.055)

Mounting Pad Layout

2.5 (0.098)

0.85 (0.033) 0.85 (0.033)

0.85 (0.033)

Cathode bar

0.65 (0.026)

0.45 (0.018)

0.10 (0.004)

1 (0.039)

0.15 (0.006)

1.35 (0.053)

0.2 (0.008)

0° to 8°

0.45 (0.018)

0.25 (0.010)

0.5 (0.020) ref.

Rev. 4 - Date: 24. Sep. 2009

Document no.: S8-V-3910.01-001 (4)

17432

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Revision: 02-Oct-12 1Document Number: 91000

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Vishay:

SD101BW-V-GS08 SD101AW-V-GS08 SD101CW-GS08 SD101BW-GS08 SD101AW-GS08 SD101CW-V-GS08

SD101AW-V-GS18 SD101BW-V-GS18 SD101CW-V-GS18 SD101CW-E3-08 SD101AW-HE3-08 SD101AW-E3-08

SD101BW-E3-08 SD101AW-E3-18 SD101BW-E3-18 SD101AW-G3-18 SD101BW-G3-08 SD101CW-HE3-18

SD101CW-G3-08 SD101BW-G3-18 SD101AW-HE3-18 SD101CW-HE3-08 SD101AW-G3-08 SD101CW-E3-18

SD101CW-G3-18 SD101BW-HE3-18 SD101BW-HE3-08