RF to IF Dual Downconverting Mixer
3400MHz –3800MHz
IDT Zero-Distortion
TM
Mixer 1 Rev1, December 2014
IDTF1178NBGI
Datasheet
G
ENERAL
D
ESCRIPTION
This document describes the specifications for the
IDTF1178 Zero-Distortion
TM
RF to IF Downconverting
Dual Mixer. This device is part of a series of mixers
offered with high side and/or low side injection options
for all UTRA bands. See the Part# Matrix for pin
compatible & feature compatible devices in this series.
The F1178 dual channel device is designed to operate
with a single 5V supply. It is optimized for operation in
a Multi-mode, Multi-carrier BaseStation Receiver for RF
bands from 3400MHz - 3800MHz with Low Side LO
injection. IF frequencies from 30MHz to 550MHz are
supported. Nominally, the device offers +37.5dBm
Output IP3 with 297mA of I
CC
.
C
OMPETITIVE
A
DVANTAGE
In typical basestation receivers, the RF to IF mixer
dominates the linearity performance for the entire
receive system. The Zero-Distortion
TM
family of mixers
dramatically improves the maximum signal levels (IM
3
tones) that the BTS can withstand at a desired Signal to
Noise Ratio (SNR). Zero-Distortion
TM
technology allows
realization of either benefit.
IP3
O
: ⇑
⇑⇑
⇑ 9dB
Dissipation: ⇓
⇓⇓
⇓ 23%
Noise Figure: 8.5dB
P
ART
#
M
ATRIX
Part# RF freq
range
(MHz)
UTRA bands IF freq
range
(MHz)
Typ.
Gain
(dB)
Injection
F1100 698 - 915 5,6,8,12,13,14,17,
19,20 150 - 450 9.0 High Side
F1102 400 - 1000 5,6,8,12,13,14,17,
19,20 50 - 300 9.0 Both
F1150 1700 - 2200 1,2,3,4,9,10, 33,
34,35, 36, 37,39 50 - 450 8.5 High Side
F1152 1400 - 2200
1,2,3,4,9,10,11
1
,
21
1
, 24
1
, 33, 34,35,
36, 37,39
50 - 350 8.5 Low Side
F
F1
11
16
62
2
2
23
30
00
0
–
–
2
27
70
00
0
7
7,
,3
38
8,
,4
40
0,
,4
41
1
5
50
0
–
–
5
50
00
0
8
8.
.9
9
B
Bo
ot
th
h
F
F1
11
17
78
8
3
34
40
00
0
-
-
3
38
80
00
0
2
22
2,
,
4
42
2,
,
4
43
3
3
30
0
-
-
5
55
50
0
9
9.
.0
0
L
Lo
ow
w
S
Si
id
de
e
1 – with High Side injection
F
EATURES
• Dual Path for Diversity Systems
• Ideal for Multi-Carrier Systems
• 9dB Gain
• Ultra linear
+
+3
37
7.
.5
5d
dB
Bm
m
I
IP
P3
3
O
O
•
•
8.5dB NF
• 200 Ω output impedance
• High +11dBm P1dB
I
• P
Pi
in
n
&
&
F
Fe
ea
at
tu
ur
re
e
C
Co
om
mp
pa
at
ti
ib
bl
le
e
• 6mm x 6mm, 36-pin package
• I
In
nd
di
iv
vi
id
du
ua
al
l
P
Pa
at
th
h
S
St
ta
an
nd
db
by
y
M
Mo
od
de
e
• <400 nsec settling from Power Up
• I
CC
= 297mA
D
EVICE
B
LOCK
D
IAGRAM
O
RDERING
I
NFORMATION
IDTF1178NBGI8
0.8 mm height
package
Green
Industrial
Temp range
Tape &
Reel
prefix
RF product Line
RF to IF Dual Downconverting Mixer
3400MHz –3800MHz
IDT Zero-Distortion
TM
Mixer 2 Rev1, December 2014
IDTF1178NBGI
Datasheet
A
BSOLUTE
M
AXIMUM
R
ATINGS
Parameter / Condition Symbol Min Max Unit
VCC to GND VCC -0.3 +5.5 V
STBY1, STBY2 V
STBY1
, V
STBY2
-0.3 VCC + 0.3 V
IF_A+, IF_B+, IF_A-, IF_B- V
IF_A+
,
V
IF_B+
, V
IF_A-
,
V
IF_B
-
+1.0 VCC+ 0.3 V
LO1_ADJ V
LO1_ADJ
+1.0 3.0 V
LO2_ADJ V
LO
2
_ADJ
+2.1 4.0 V
LO_IN, RF_A, RF_B V
LO_IN
, V
RF_A
,
V
RF_B
-0.3 +0.3 V
IF_BiasA, IF_BiasB to GND V
IF_BiasA
,
V
IF_BiasB
-0.3 +0.3 V
RF Input Power P
LO_IN
, P
RF_A
,
P
RF_B
+20 dBm
Continuous Power Dissipation 2.2 W
Operating Temperature Range (Case
Temperature)
T
C
-40 +105 °C
Maximum Junction Temperature T
Jmax
150 °C
Storage Temperature Range T
ST
-65 +150 °C
Lead Temperature (soldering, 10s) T
LEAD
+260° °C
ESD Voltage– HBM (Per JESD22-A114) V
ESDHBM
Class 2
(2500V)
ESD Voltage – CDM (Per JESD22-C101) V
ESDCDM
Class C3
(1000V)
Stresses above those listed above may cause permanent damage to the device. Functional operation of the device at
these or any other conditions above those indicated in the operational section of this specification is not implied.
Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
P
ACKAGE
T
HERMAL AND
M
OISTURE
C
HARACTERISTICS
θ
JA
(Junction – Ambient) 35°C/W
θ
JC
(Junction – Case) The Case is defined as the exposed paddle 2.5°C/W
Moisture Sensitivity Rating (Per J-STD-020) MSL 1
RF to IF Dual Downconverting Mixer
3400MHz –3800MHz
IDT Zero-Distortion
TM
Mixer 3 Rev1, December 2014
IDTF1178NBGI
Datasheet
IDTF1178
R
ECOMMENDED
O
PERATING
C
ONDITIONS
Parameter
Symbol
Comment
min
typ
max
Units
Supply Voltage(s) V
CC
All V
CC
pins 4.75 5.25 V
LO Power P
LO
-3 +3 dBm
Operating Temperature
Range
T
CASE
Case Temperature -40 +105 deg°C
RF Freq Range F
RF
3400 3800 MHz
LO Freq Range F
LO
2900 3620
IF Freq Range F
IF
30 550
The F1178 is well suited for DPD applications with a broad IF frequency range from 30 MHz to 550 MHz using the
standard BOM specified in this datasheet
RF to IF Dual Downconverting Mixer
3400MHz –3800MHz
IDT Zero-Distortion
TM
Mixer 4 Rev1, December 2014
IDTF1178NBGI
Datasheet
IDTF1178
S
PECIFICATION
Typical Application Circuit specifications apply at V
CC
= +5.00V, T
C
= +25°C using LS LO. F
RF
= 3550 MHz, F
LO
=
3250MHz, F
IF
= 300MHz, Pin = -10dBm/tone unless otherwise stated, P
LO
= 0 dBm, STBY = GND, Transformer Loss
not included (de-embedded), RF trace de-embedded unless otherwise noted.
Parameter Symbol
Comment min typ max units
Logic Input High
3
V
IH
For Standby Pins
1.1
V
Logic Input Low
3
V
IL
For Standby Pins
0.60
V
Logic Current I
IH,
I
IL
For Standby Pins
-110 +5
µA
Supply Current I
2CHAN
Total Both Channels 297 345
1
mA
I
1CHAN
Single Channel 155 180
I
STBY
STBY = V
IH
Total Both Channels
14 24
Power Up Time T
ON
• Pin = -13 dBm
• Gate STBY from V
IH
to V
IL
• Time for IF Signal to settle
to within 0.1 dB of final
value
0.38
µsec
Power Down Time T
OFF
• Pin = -13 dBm
• Gate STBY from V
IL
to V
IH
Time for IF Signal to settle
to within 0.1 dB of final
value
0.155
µsec
Conversion Gain G
7.8 9 10
dB
Gain, Temperature
drift
G
DRIFT
Tcase: -40°C to +105°C
0.015
dB/°C
Noise Figure NF
8.5
dB
Noise Figure - HOT NF
HOT
Tcase = 105°C 10.3
dB
Noise Figure,
Temperature drift
NF
DRIFT
Tcase: -40°C to +105°C
0.022
dB/°C
Noise Figure
w/Blocker
NF
BLK
+100MHz offset blocker
P
IN
= +8dBm
18.5 dB
Output IP3 IP3
O
5MHz Tone Separation 33
37.5
dBm
2RF – 2LO rejection 2x2
P
RF
= -10 dBm
Frequency = F
RF
- ½ F
IF
-64 -54
dBc
3RF – 3LO rejection 3x3
P
RF
= -10 dBm
Frequency = F
RF
-1/3F
IF
-75 -65
dBc
1 dB Compression P1dB
I
Input referred 9 11
dBm
RF to IF Dual Downconverting Mixer
3400MHz –3800MHz
IDT Zero-Distortion
TM
Mixer 5 Rev1, December 2014
IDTF1178NBGI
Datasheet
IDTF1178
S
PECIFICATION
(C
ONTINUED
)
Typical Application Circuit specifications apply at V
CC
= +5.00V, T
C
= +25°C using LS LO. F
RF
= 3550 MHz, F
LO
=
3250MHz, F
IF
= 300MHz, Pin = -10dBm/tone unless otherwise stated, P
LO
= 0 dBm, STBY = GND, Transformer Loss
not included (de- embedded), RF trace de-embedded unless otherwise noted.
Parameter Symbol
Comment min typ max units
RF Input Impedance Z
RF
Single Ended 50 Ω
RF Input Return Loss RL
RF
No external matching 18 dB
IF Output Impedance Z
IF
Differential 200 Ω
IF Output Return Loss RL
IF
No external matching 13 dB
LO Port Impedance Z
LO
Single Ended 50 Ω
LO Port Return Loss LO
RF
No external matching 14 dB
Channel Isolation ISO
C
IF_B Pout vs. IF_A w/
RF_A input
40 44 dB
LO to IF leakage ISO
LI
-30 -25 dBm
RF to IF leakage ISO
RI
Relative to IF Pout
-50 -40 dBc
LO to RF leakage ISO
LR
-30 dBm
1 – Items in min/max columns in bold italics are Guaranteed by Test
2 – All other Items in min/max columns are Guaranteed by Design Characterization
3 – JEDEC 1.8V logic
RF to IF Dual Downconverting Mixer
3400MHz –3800MHz
IDT Zero-Distortion
TM
Mixer 6 Rev1, December 2014
IDTF1178NBGI
Datasheet
S
TANDBY
L
OGIC
T
ABLE
Main
Channel
Diversity Channel
STBY1 (pin 22)
STBY2 (pin 24)
ON
ON
0
0
OFF
OFF
1
0
ON
OFF
0
1
OFF
ON
1
1
RF to IF Dual Downconverting Mixer
3400MHz –3800MHz
IDT Zero-Distortion
TM
Mixer 7 Rev1, December 2014
IDTF1178NBGI
Datasheet
T
YPICAL
O
PERATING
C
ONDITIONS
Unless otherwise noted, the following conditions apply to the Typ Ops Graphs:
• 5MHz Tone Spacing
• Low Side LO injection graphs with 300MHz &400MHz & 500MHz IF
• Pin = – 10 dBm per Tone
• LO port = Pin 19 (Main Port)
• Listed Temperatures are Case Temperature (TC = Case Temperature)
• Where noted, TA or TAMB = Ambient Temperature
RF to IF Dual Downconverting Mixer
3400MHz –3800MHz
IDT Zero-Distortion
TM
Mixer 8 Rev1, December 2014
IDTF1178NBGI
Datasheet
T
YPICAL
O
PERATION
C
ONDITIONS
[
IF
=300MH
Z
,
L
OW
S
IDE
I
NJECTION
]
(-1-)
Gain vs. T
CASE
Gain vs. Lo Level
Output IP3 vs. Vcc
Gain vs. Vcc
Output IP3 vs. TCASE
Output IP3 vs. LO Level
0
2
4
6
8
10
12
14
16
18
20
3300 3350 3400 3450 3500 3550 3600 3650 3700 3750 3800 3850 3900
Gain (dB)
RF Freq (MHz)
105degC - 5.0V - 0dBm - CHA 105degC - 5.0V - 0dBm - CHB
25degC - 5.0V - 0dBm - CHA 25degC - 5.0V - 0dBm - CHB
-40degC - 5.0V - 0dBm - CHA -40degC - 5.0V - 0dBm - CHB
0
2
4
6
8
10
12
14
16
18
20
3300 3350 3400 3450 3500 3550 3600 3650 3700 3750 3800 3850 3900
Gain (dB)
RF Freq (MHz)
25degC - 5.0V - 0dBm - CHA 25degC - 5.0V - 0dBm - CHB
25degC - 5.0V - 3dBm - CHA 25degC - 5.0V - 3dBm - CHB
25degC - 5.0V - -3dBm - CHA 25degC - 5.0V - -3dBm - CHB
10
14
18
22
26
30
34
38
42
46
50
3.30 3.35 3.40 3.45 3.50 3.55 3.60 3.65 3.70 3.75 3.80 3.85 3.90
Output IP3 (dBm)
RF Freq (GHz)
25degC - 4.75V - 0dBm - CHA 25degC - 4.75V - 0dBm - CHB
25degC - 5.0V - 0dBm - CHA 25degC - 5.0V - 0dBm - CHB
25degC - 5.25V - 0dBm - CHA 25degC - 5.25V - 0dBm - CHB
0
2
4
6
8
10
12
14
16
18
20
3300 3350 3400 3450 3500 3550 3600 3650 3700 3750 3800 3850 3900
Gain (dB)
RF Freq (MHz)
25degC - 4.75V - 0dBm - CHA 25degC - 4.75V - 0dBm - CHB
25degC - 5.0V - 0dBm - CHA 25degC - 5.0V - 0dBm - CHB
25degC - 5.25V - 0dBm - CHA 25degC - 5.25V - 0dBm - CHB
10
14
18
22
26
30
34
38
42
46
50
3.30 3.35 3.40 3.45 3.50 3.55 3.60 3.65 3.70 3.75 3.80 3.85 3.90
Output IP3 (dBm)
RF Freq (GHz)
105degC - 5.0V - 0dBm - CHA 105degC - 5.0V - 0dBm - CHB
25degC - 5.0V - 0dBm - CHA 25degC - 5.0V - 0dBm - CHB
-40degC - 5.0V - 0dBm - CHA -40degC - 5.0V - 0dBm - CHB
10
14
18
22
26
30
34
38
42
46
50
3.30 3.35 3.40 3.45 3.50 3.55 3.60 3.65 3.70 3.75 3.80 3.85 3.90
Output IP3 (dBm)
RF Freq (GHz)
25degC - 5.0V - 0dBm - CHA 25degC - 5.0V - 0dBm - CHB
25degC - 5.0V - 3dBm - CHA 25degC - 5.0V - 3dBm - CHB
25degC - 5.0V - -3dBm - CHA 25degC - 5.0V - -3dBm - CHB
RF to IF Dual Downconverting Mixer
3400MHz –3800MHz
IDT Zero-Distortion
TM
Mixer 9 Rev1, December 2014
IDTF1178NBGI
Datasheet
T
YPICAL
O
PERATION
C
ONDITIONS
[
IF
=300MH
Z
,
L
OW
S
IDE
I
NJECTION
]
(-2-)
2RF x 2LO rejection vs. T
CASE
2RF x 2LO Rejection vs. V
CC
3RF x 3LO Rejection vs. LO Level
2RF x 2LO Rejection vs. LO Level
3RF x 3LO rejection vs. T
CASE
3RF x 3LO Rejection vs. V
CC
-100
-90
-80
-70
-60
-50
-40
-30
-20
-10
0
3300 3350 3400 3450 3500 3550 3600 3650 3700 3750 3800 3850 3900
2x2 Rejection (dBc)
RF Freq (MHz)
105degC - 5.0V - 0dBm - CHA 105degC - 5.0V - 0dBm - CHB
25degC - 5.0V - 0dBm - CHA 25degC - 5.0V - 0dBm - CHB
-40degC - 5.0V - 0dBm - CHA -40degC - 5.0V - 0dBm - CHB
-100
-90
-80
-70
-60
-50
-40
-30
-20
-10
0
3300 3350 3400 3450 3500 3550 3600 3650 3700 3750 3800 3850 3900
2x2 Rejection (dBc)
RF Freq (MHz)
25degC - 4.75V - 0dBm - CHA 25degC - 4.75V - 0dBm - CHB
25degC - 5.0V - 0dBm - CHA 25degC - 5.0V - 0dBm - CHB
25degC - 5.25V - 0dBm - CHA 25degC - 5.25V - 0dBm - CHB
-100
-90
-80
-70
-60
-50
-40
-30
-20
-10
0
3300 3350 3400 3450 3500 3550 3600 3650 3700 3750 3800 3850 3900
3x3 Rejection (dBc)
RF Freq (MHz)
25degC - 5.0V - 0dBm - CHA 25degC - 5.0V - 0dBm - CHB
25degC - 5.0V - 3dBm - CHA 25degC - 5.0V - 3dBm - CHB
25degC - 5.0V - -3dBm - CHA 25degC - 5.0V - -3dBm - CHB
-100
-90
-80
-70
-60
-50
-40
-30
-20
-10
0
3300 3350 3400 3450 3500 3550 3600 3650 3700 3750 3800 3850 3900
2x2 Rejection (dBc)
RF Freq (MHz)
25degC - 5.0V - 0dBm - CHA 25degC - 5.0V - 0dBm - CHB
25degC - 5.0V - 3dBm - CHA 25degC - 5.0V - 3dBm - CHB
25degC - 5.0V - -3dBm - CHA 25degC - 5.0V - -3dBm - CHB
-100
-90
-80
-70
-60
-50
-40
-30
-20
-10
0
3300 3350 3400 3450 3500 3550 3600 3650 3700 3750 3800 3850 3900
3x3 Rejection (dBc)
RF Freq (MHz)
105degC - 5.0V - 0dBm - CHA 105degC - 5.0V - 0dBm - CHB
25degC - 5.0V - 0dBm - CHA 25degC - 5.0V - 0dBm - CHB
-40degC - 5.0V - 0dBm - CHA -40degC - 5.0V - 0dBm - CHB
-100
-90
-80
-70
-60
-50
-40
-30
-20
-10
0
3300 3350 3400 3450 3500 3550 3600 3650 3700 3750 3800 3850 3900
3x3 Rejection (dBc)
RF Freq (MHz)
25degC - 4.75V - 0dBm - CHA 25degC - 4.75V - 0dBm - CHB
25degC - 5.0V - 0dBm - CHA 25degC - 5.0V - 0dBm - CHB
25degC - 5.25V - 0dBm - CHA 25degC - 5.25V - 0dBm - CHB
RF to IF Dual Downconverting Mixer
3400MHz –3800MHz
IDT Zero-Distortion
TM
Mixer 10 Rev1, December 2014
IDTF1178NBGI
Datasheet
T
YPICAL
O
PERATION
C
ONDITIONS
[
IF
=300MH
Z
,
L
OW
S
IDE
I
NJECTION
]
(-3-)
2
nd
Harmonic vs. T
CASE
2
nd
Harmonic vs. V
CC
3
rd
Harmonic vs. Lo Level
2
nd
Harmonic vs. LO Level
3
rd
Harmonic vs. T
CASE
3
rd
Harmonic vs. V
CC
-100
-90
-80
-70
-60
-50
-40
-30
-20
-10
0
3300 3350 3400 3450 3500 3550 3600 3650 3700 3750 3800 3850 3900
HD2 (dBc)
RF Freq (MHz)
105degC - 5.0V - 0dBm - CHA 105degC - 5.0V - 0dBm - CHB
25degC - 5.0V - 0dBm - CHA 25degC - 5.0V - 0dBm - CHB
-40degC - 5.0V - 0dBm - CHA -40degC - 5.0V - 0dBm - CHB
-100
-90
-80
-70
-60
-50
-40
-30
-20
-10
0
3300 3350 3400 3450 3500 3550 3600 3650 3700 3750 3800 3850 3900
HD2 (dBc)
RF Freq (MHz)
25degC - 4.75V - 0dBm - CHA 25degC - 4.75V - 0dBm - CHB
25degC - 5.0V - 0dBm - CHA 25degC - 5.0V - 0dBm - CHB
25degC - 5.25V - 0dBm - CHA 25degC - 5.25V - 0dBm - CHB
-100
-90
-80
-70
-60
-50
-40
-30
-20
-10
0
3300 3350 3400 3450 3500 3550 3600 3650 3700 3750 3800 3850 3900
HD3 (dBc)
RF Freq (MHz)
25degC - 5.0V - 0dBm - CHA 25degC - 5.0V - 0dBm - CHB
25degC
-
5.0V
-
3dBm
-
CHA
25degC
-
5.0V
-
3dBm
-
CHB
25degC - 5.0V - -3dBm - CHA 25degC - 5.0V - -3dBm - CHB
-100
-90
-80
-70
-60
-50
-40
-30
-20
-10
0
3300 3350 3400 3450 3500 3550 3600 3650 3700 3750 3800 3850 3900
HD2 (dBc)
RF Freq (MHz)
25degC - 5.0V - 0dBm - CHA 25degC - 5.0V - 0dBm - CHB
25degC
-
5.0V
-
3dBm
-
CHA
25degC
-
5.0V
-
3dBm
-
CHB
25degC - 5.0V - -3dBm - CHA 25degC - 5.0V - -3dBm - CHB
-100
-90
-80
-70
-60
-50
-40
-30
-20
-10
0
3300 3350 3400 3450 3500 3550 3600 3650 3700 3750 3800 3850 3900
HD3 (dBc)
RF Freq (MHz)
105degC - 5.0V - 0dBm - CHA 105degC - 5.0V - 0dBm - CHB
25degC - 5.0V - 0dBm - CHA 25degC - 5.0V - 0dBm - CHB
-40degC - 5.0V - 0dBm - CHA -40degC - 5.0V - 0dBm - CHB
-100
-90
-80
-70
-60
-50
-40
-30
-20
-10
0
3300 3350 3400 3450 3500 3550 3600 3650 3700 3750 3800 3850 3900
HD3 (dBc)
RF Freq (MHz)
25degC - 4.75V - 0dBm - CHA 25degC - 4.75V - 0dBm - CHB
25degC
-
5.0V
-
0dBm
-
CHA
25degC
-
5.0V
-
0dBm
-
CHB
25degC - 5.25V - 0dBm - CHA 25degC - 5.25V - 0dBm - CHB
RF to IF Dual Downconverting Mixer
3400MHz –3800MHz
IDT Zero-Distortion
TM
Mixer 11 Rev1, December 2014
IDTF1178NBGI
Datasheet
T
YPICAL
O
PERATION
C
ONDITIONS
[
IF
=300MH
Z
,
L
OW
S
IDE
I
NJECTION
]
(-4-)
LO-IF Leakage vs. T
CASE
LO-IF Leakage vs. V
CC
RF-IF Leakage vs. LO Level
LO-IF Leakage vs. LO Level
RF-IF Leakage vs. T
CASE
RF-IF Leakage vs. V
CC
-50
-45
-40
-35
-30
-25
-20
-15
-10
-5
0
3.30 3.35 3.40 3.45 3.50 3.55 3.60 3.65 3.70 3.75 3.80 3.85 3.90
Lo to IF leakage (dBm)
RF Freq (GHz)
105degC - 5.0V - 0dBm - CHA 105degC - 5.0V - 0dBm - CHB
25degC - 5.0V - 0dBm - CHA 25degC - 5.0V - 0dBm - CHB
-40degC - 5.0V - 0dBm - CHA -40degC - 5.0V - 0dBm - CHB
-50
-45
-40
-35
-30
-25
-20
-15
-10
-5
0
3.30 3.35 3.40 3.45 3.50 3.55 3.60 3.65 3.70 3.75 3.80 3.85 3.90
Lo to IF leakage (dBm)
RF Freq (GHz)
25degC - 4.75V - 0dBm - CHA 25degC - 4.75V - 0dBm - CHB
25degC - 5.0V - 0dBm - CHA 25degC - 5.0V - 0dBm - CHB
25degC - 5.25V - 0dBm - CHA 25degC - 5.25V - 0dBm - CHB
-60
-55
-50
-45
-40
-35
-30
-25
-20
-15
-10
3.30 3.35 3.40 3.45 3.50 3.55 3.60 3.65 3.70 3.75 3.80 3.85 3.90
RF to IF leakage (dBc)
RF Frequency (GHz)
25degC - 5.00V - -3dBm - CHA 25degC - 5.00V - -3dBm - CHB
25degC - 5.00V - 0dBm - CHA 25degC - 5.00V - 0dBm - CHB
25degC - 5.00V - 3dBm - CHA 25degC - 5.00V - 3dBm - CHB
-50
-45
-40
-35
-30
-25
-20
-15
-10
-5
0
3.30 3.35 3.40 3.45 3.50 3.55 3.60 3.65 3.70 3.75 3.80 3.85 3.90
Lo to IF leakage (dBm)
RF Frequency (GHz)
25degC - 5.0V - -3dBm - CHA 25degC - 5.0V - -3dBm - CHB
25degC - 5.0V - 0dBm - CHA 25degC - 5.0V - 0dBm - CHB
25degC
-
5.0V
-
3dBm
-
CHA
25degC
-
5.0V
-
3dBm
-
CHB
-60
-55
-50
-45
-40
-35
-30
-25
-20
-15
-10
3.30 3.35 3.40 3.45 3.50 3.55 3.60 3.65 3.70 3.75 3.80 3.85 3.90
RF to IF leakage (dBc)
RF Frequency (GHz)
105degC - 5.00V - 0dBm - CHA 105degC - 5.00V - 0dBm - CHB
25degC - 5.00V - 0dBm - CHA 25degC - 5.00V - 0dBm - CHB
-40degC - 5.00V - 0dBm - CHA -40degC - 5.00V - 0dBm - CHB
-60
-55
-50
-45
-40
-35
-30
-25
-20
-15
-10
3.30 3.35 3.40 3.45 3.50 3.55 3.60 3.65 3.70 3.75 3.80 3.85 3.90
RF to IF leakage (dBc)
RF Frequency (GHz)
25degC - 4.75V - 0dBm - CHA 25degC - 4.75V - 0dBm - CHB
25degC - 5.00V - 0dBm - CHA 25degC - 5.00V - 0dBm - CHB
25degC - 5.25V - 0dBm - CHA 25degC - 5.25V - 0dBm - CHB
RF to IF Dual Downconverting Mixer
IDT Zero-Distortion
TM
Mixer
T
YPICAL
O
PERATION
C
ONDITIONS
[
Lo-RF Leakage vs. T
CASE
Lo-RF Leakage vs. V
CC
I
CC
vs. V
CC
-50
-45
-40
-35
-30
-25
-20
-15
-10
-5
0
3.00 3.10 3.20 3.30 3.40 3.50 3.60
3.70
Lo to RF leakage (dBm)
Lo Freq (GHz)
105degC - 5.0V - 0dBm - CHA 105degC -
5.0V
25degC - 5.0V - 0dBm - CHA 25degC -
5.0V
-40degC - 5.0V - 0dBm - CHA -40degC -
5.0V
-50
-45
-40
-35
-30
-25
-20
-15
-10
-5
0
3.00 3.10 3.20 3.30 3.40 3.50 3.60
3.70
Lo to RF leakage (dBm)
Lo Freq (GHz)
25degC - 4.75V - 0dBm - CHA 25degC -
4.75V
25degC - 5.0V - 0dBm - CHA 25degC -
5.0V
25degC - 5.25V - 0dBm - CHA 25degC -
5.25V
0.2
0.22
0.24
0.26
0.28
0.3
0.32
0.34
0.36
0.38
0.4
3300 3350 3400 3450 3500 3550 3600 3650 3700
3750
Current consumption (A)
RF Freq (MHz)
25degC
-
4.75V
-
0dBm
25degC
-
5.0V
-
0dBm
25degC
RF to IF Dual Downconverting Mixer
3400MHz
12
IDTF
[
IF
=300MH
Z
,
L
OW
S
IDE
I
NJECTION
]
(-5-)
Lo-
RF Leakage vs. LO Level
I
CC
vs. T
CASE
I
CC
vs. LO Level
3.70
3.80 3.90 4.00
5.0V
- 0dBm - CHB
5.0V
- 0dBm - CHB
5.0V
- 0dBm - CHB
3.70
3.80 3.90 4.00
4.75V
- 0dBm - CHB
5.0V
- 0dBm - CHB
5.25V
- 0dBm - CHB
3750
3800 3850 3900
25degC
-
5.25V
-
0dBm
0.2
0.22
0.24
0.26
0.28
0.3
0.32
0.34
0.36
0.38
0.4
3300 3350 3400 3450 3500 3550
3600
Current consumption (A)
RF Freq (MHz)
105degC - 5.0V - 0dBm
25degC
0.2
0.22
0.24
0.26
0.28
0.3
0.32
0.34
0.36
0.38
0.4
3300 3350 3400 3450 3500 3550
3600
Current consumption (A)
RF Freq (MHz)
25degC - 5.0V - 0dBm
25degC
3400MHz
–3800MHz
Rev1, December 2014
IDTF
1178NBGI
Datasheet
RF Leakage vs. LO Level
3600
3650 3700 3750 3800 3850 3900
RF Freq (MHz)
25degC
- 5.0V - 0dBm -40degC - 5.0V - 0dBm
3600
3650 3700 3750 3800 3850 3900
RF Freq (MHz)
25degC
- 5.0V - 3dBm 25degC - 5.0V - -3dBm
RF to IF Dual Downconverting Mixer
IDT Zero-Distortion
TM
Mixer
T
YPICAL
O
PERATION
C
ONDITIONS
[
Channel Isolation vs. T
CASE
Channel Isolation vs. V
CC
Settling Time (STBY -> V
IL
)
20
24
28
32
36
40
44
48
52
56
60
3300 3350 3400 3450 3500 3550 3600 3650 3700
3750
Channel Isolation (dBc)
RF Freq (MHz)
105degC - 5.0V - 0dBm - CHA 105degC -
5.0V
25degC
-
5.0V
-
0dBm
-
CHA
25degC
-
5.0V
-40degC - 5.0V - 0dBm - CHA -40degC -
5.0V
20
24
28
32
36
40
44
48
52
56
60
3300 3350 3400 3450 3500 3550 3600 3650 3700
3750
Channel Isolation (dBc)
RF Freq (MHz)
25degC - 4.75V - 0dBm - CHA 25degC -
4.75V
25degC - 5.0V - 0dBm - CHA 25degC -
5.0V
25degC - 5.25V - 0dBm - CHA 25degC -
5.25V
RF to IF Dual Downconverting Mixer
3400MHz
13
IDTF
[
IF
=300MH
Z
,
L
OW
S
IDE
I
NJECTION
]
(-6-)
Channel Isolation vs. LO Level
I
NPUT
P1dB
Settling Time (STBY -> V
IH
)
3750
3800 3850 3900
5.0V
- 0dBm - CHB
5.0V
-
0dBm
-
CHB
5.0V
- 0dBm - CHB
3750
3800 3850 3900
4.75V
- 0dBm - CHB
5.0V
- 0dBm - CHB
5.25V
- 0dBm - CHB
20
24
28
32
36
40
44
48
52
56
60
3300 3350 3400 3450 3500 3550
3600
Channel Isolation (dBc)
RF Freq (MHz)
25degC - 5.0V - 0dBm - CHA
25degC
-
5.0V
-
3dBm
-
CHA
25degC - 5.0V - -3dBm - CHA
5
6
7
8
9
10
11
12
13
14
15
3300 3400 3500 3550
Input P1dB (dBm)
RF Freq (MHz)
25degC - 5.0V - 0dBm - CHA
3400MHz
–3800MHz
Rev1, December 2014
IDTF
1178NBGI
Datasheet
Channel Isolation vs. LO Level
3600
3650 3700 3750 3800 3850 3900
RF Freq (MHz)
25degC - 5.0V - 0dBm - CHB
25degC
-
5.0V
-
3dBm
-
CHB
25degC - 5.0V - -3dBm - CHB
3600 3700 3800 3900
RF Freq (MHz)
25degC - 5.0V - 0dBm - CHB
RF to IF Dual Downconverting Mixer
IDT Zero-Distortion
TM
Mixer
T
YPICAL
O
PERATION
C
ONDITIONS
[
N
OISE
F
IGURE
[RF:
3550MH
Z
]
L
O PORT
R
ETURN
L
OSS
IF
PORT
R
ETURN
L
OSS
0.0
2.0
4.0
6.0
8.0
10.0
12.0
14.0
16.0
18.0
20.0
200 250 300 350 400
Noise Figure (dB)
IF Freq (MHz)
105degC 25degC
-20
-18
-16
-14
-12
-10
-8
-6
-4
-2
0
2000 2250 2500 2750 3000 3250
Lo port Return Loss (dBc)
Lo Freq (MHz)
RF to IF Dual Downconverting Mixer
3400MHz
14
IDTF
[
IF
=300MH
Z
,
L
OW
S
IDE
I
NJECTION
]
(-7-)
N
OISE
F
IGURE
W
/
B
LOCKER
100MH
RF
PORT
R
ETURN
L
OSS
450 500
-40degC
3500 3750 4000
0
4
8
12
16
20
24
28
32
36
40
-18 -14 -12 -10 -6
Noise Figure with Blocker (dB)
Blocker Power Level (dBm)
3400MHz
–3800MHz
Rev1, December 2014
IDTF
1178NBGI
Datasheet
100MH
Z OFFSET
[RF:
3550MH
Z
]
-2 2 6 8 10 12
Blocker Power Level (dBm)
RF to IF Dual Downconverting Mixer
IDT Zero-Distortion
TM
Mixer
P
ACKAGE
D
RAWING
(6
X
6
QFN)
RF to IF Dual Downconverting Mixer
3400MHz
15
IDTF
3400MHz
–3800MHz
Rev1, December 2014
IDTF
1178NBGI
Datasheet
RF to IF Dual Downconverting Mixer
3400MHz –3800MHz
IDT Zero-Distortion
TM
Mixer 16 Rev1, December 2014
IDTF1178NBGI
Datasheet
F1178
P
INOUT
Signal Path Inputs & Outputs in BLUE
Package Drawing
6 mm x 6 mm package dimension
3.7 mm x 3.7 mm slug
0.5 mm pitch
36 pins
0.75 mm height
0.25 mm pad width
0.55 mm pad length
Exposed Pad
9
8
7
6
5
4
3
2
1
18
1716151413121110
27
26
25
24
23
22
21
20
19
36 35 34 33 32 31 30 29 28
CO 0.35 mm
RF_B
NC
GND
RF_A
GND
GND
NC
LO_in
NC
VCC
STBY1
GND
NC
STBY2
NC
GND
GND
GND
RF to IF Dual Downconverting Mixer
3400MHz –3800MHz
IDT Zero-Distortion
TM
Mixer 17 Rev1, December 2014
IDTF1178NBGI
Datasheet
P
IN
D
ESCRIPTION
T
ABLE
Pin Name Function
1 RF_A
Main Channel RF Input. Internally matched to 50Ω. DO NOT
apply DC to this pin. Place the coupling capacitor close as close
to the pin as possible.
2, 3, 5, 7, 8,
18, 20, 23, 28 GND Ground these pins.
4, 6, 12, 15,
25, 26, 27,
31, 34
N.C. No Connection. Not internally connected. OK to connect to Vcc.
OK to connect to GND.
10, 16, 21, 30,
36 VCC Power Supply. Bypass to GND with capacitors shown in the
Typical Application Circuit as close as possible to pin.
9 RF_B
Diversity Channel RF Input. Internally matched to 50Ω. DO NOT
apply DC to this pin. Place the coupling capacitor close as close
to the pin as possible.
11 IF_BiasB
Connect the specified resistor from this pin to ground to set the
bias for the Diversity IF amplifier. This is NOT a current set
resistor.
13, 14 IFB+, IFB-
Diversity Mixer Differential IF Output. Connect pullup inductors
from each of these pins to VCC (see the Typical Application
Circuit).
17 LO1_ADJ Connect the specified resistor from this pin to ground to set the
first stage LO common buffer Icc.
19 LO_in Local Oscillator Input. Connect the LO to this port through the
recommended coupling capacitor. DO NOT apply DC to this pin.
22 STBY1 STBY control pin 1. See STBY Logic Table for desired setting
24 STBY2 STBY control pin 2. See STBY Logic Table for desired setting
29 LO2_ADJ Connect the specified resistor from this pin to ground to set the
first stage LO common buffer Icc.
32, 33 IFA-, IFA+ Main Mixer Differential IF Output. Connect pullup inductors from
each of these pins to VCC (see the Typical Application Circuit).
35 IF_BiasA Connect the specified resistor from this pin to ground to set the
bias for the Main IF amplifier. This is NOT a current set resistor.
— EP
Exposed Pad. Internally connected to GND. Solder this exposed
pad to a PCB pad that uses multiple ground vias to provide heat
transfer out of the device into the PCB ground planes. These
multiple via grounds are also required to achieve the noted RF
performance.
RF to IF Dual Downconverting Mixer
3400MHz –3800MHz
IDT Zero-Distortion
TM
Mixer 18 Rev1, December 2014
IDTF1178NBGI
Datasheet
D
IGITAL
P
IN
V
OLTAGE
&
R
ESISTANCE
V
ALUES
Pin Name DC voltage (volts) Resistance (ohms)
22 STBY1 5 50K
24 STBY2 Floating voltage Open Circuit
P
OWER
S
UPPLIES
A common VCC power supply should be used for all pins requiring DC power. All supply pins should be bypassed with
external capacitors to minimize noise and fast transients. Supply noise can degrade noise figure and fast transients
can trigger ESD clamps and cause them to fail. Supply voltage change or transients should have a slew rate smaller
than 1V/20uS. In addition, all control pins should remain at 0V (+/-0.3V) while the supply voltage ramps or while it
returns to zero.
RF to IF Dual Downconverting Mixer
3400MHz –3800MHz
IDT Zero-Distortion
TM
Mixer 19 Rev1, December 2014
IDTF1178NBGI
Datasheet
EVKIT
&
T
YPICAL
A
PPLICATION
S
CHEMATIC
L1
L2
C11
C17
U1
RF_A
1
GND
2
GND
3
NC
4
GND
5
NC
6
GND
7
GND
8
RF_B
9
Vcc
10
IF_BiasB
11
NC
12
IF_B+
13
IF_B-
14
NC
15
Vcc
16
LO1_ADJ
17
GND
18
NC 27
NC 26
NC 25
STBY2 24
GND 23
STBY1 22
Vcc 21
GND 20
LO_In 19
Vcc 36
IF_BiasA 35
NC 34
IF_A+ 33
IF_A- 32
NC 31
Vcc 30
LO2_ADJ 29
GND 28
T1
1 6
2
3 4
C2
C19C3
J2
1
2
C9
VCC
R12
C1
VCC
VCC
C8
J6
1
2
J5
1
2
J4
1
2
R15
JP8
1
2
3
R16
C5
C10
R8R9
VCC
VCC
C12
C7
J3
1
2
JP6
1
2
3
JP2
1
2
T2
1 6
2
3 4
J1
1
2
C4
VCC
R11
L3
L4
VCC
C16
C14
C15
JP3
1
2
C18
J7
1
2
JP7
1
2
3
JP5
1
2
3
VCC
C13
R14
R13
R17
R18
C6
VCC
RF to IF Dual Downconverting Mixer
IDT Zero-Distortion
TM
Mixer
EVKIT
P
ICTURE
RF to IF Dual Downconverting Mixer
3400MHz
20
IDTF
3400MHz
–3800MHz
Rev1, December 2014
IDTF
1178NBGI
Datasheet
RF to IF Dual Downconverting Mixer
3400MHz –3800MHz
IDT Zero-Distortion
TM
Mixer 21 Rev1, December 2014
IDTF1178NBGI
Datasheet
EVKIT
BOM
T
OP
M
ARKINGS
Part Reference QTY DESCRIPTION Mfr. Part # Mfr.
C1, C5, C6, C9, C12, C13, C16 7 10000pF ±10%, 16V, X7R Ceramic Capacitor (0402) GRM155R71C103K Murata
C8, C10, C11 3 39pF ±5%, 50V, C0G Ceramic Capacitor (0402) GRM1555C1H390J Murata
C17 1 0.3pF ±0.05pF, 50V, C0G Ceramic Capacitor (0402) GRM1555C1HR30W Murata
C18, C19 2 1000pF ±5%, 50V, C0G Ceramic Capacitor (0402) GRM1555C1H102J Murata
C4 1 10uF ±20%, 6.3V, X5R Ceramic Capacitor (0603) GRM188R60J106M Murata
R1-R7, R10 8 0Ω 1/10W Resistors (0402) ERJ-2GE0R00X Panasonic
C2, C3, C14, C15 4 10Ω ±1%, 1/10W, Resistor (0402) ERJ-2RKF10R0X Panasonic
R13 1 240Ω ±1%, 1/10W, Resistor (0402) ERJ-2RKF2400X Panasonic
R14 1 270Ω ±1%, 1/10W, Resistor (0402) ERJ-2RKF2700X Panasonic
R11, R12, R15, R16 4 330Ω ±1%, 1/10W, Resistor (0402) ERJ-2RKF3300X Panasonic
R17 1 2.4kΩ ±1%, 1/10W, Resistor (0402) ERJ-2RKF2401X Panasonic
R18 1 2.67kΩ ±1%, 1/10W, Resistor (0402) ERJ-2RKF2671X Panasonic
R8, R9 2 47kΩ ±1%, 1/10W, Resistor (0402) RC0402FR-0747K Yageo
L1-L4 4 1.8uH ±5%, .410A, Ferrite Chip Inductor (0805) 0805LS-182XJLB Coil Craft
T1, T2 2 3-800Mhz 50Ω, RF Transformer (4:1) TC4-1WG2+ Mini Circuits
JP1, JP2, JP3 3 CONN HEADER VERT SGL 2 X 1 POS GOLD 961102-6404-AR 3M
JP4, JP5, JP6, JP7 4 CONN HEADER VERT SGL 3 X 1 POS GOLD 961103-6404-AR 3M
J1, J2, J7 3 Edge Launch SMA (0.250 inch pitch ground round) 142-0711-821 Emerson Johnson
J3, J4, J5, J6 4 Edge Launch SMA (0.375 inch pitch ground tabs) 142-0701-851 Emerson Johnson
U1 1 RF to IF Dual Downconverting MIXER 6 X 6 QFN36 F1178NBGI IDT
1 Printed Circuit Board F1178 REV (01) IDT
C7 No Installed Ceramic Capacitor (0402) N/A N/A