ADVANCED APT20GF120BR POWER TECHNOLOGY 1200V 332A The Fast IGBT is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Fast IGBT offers superior ruggedness, fast switching speed and low Collector-Emitter On voltage. - Low Forward Voltage Drop * High Freq. Switching to 20KHz Ge c - Low Tail Current + Ultra Low Leakage Current E Avalanche Rated * RBSOA and SCSOA Rated G E MAXIMUM RATINGS All Ratings: Tg = 25C unless otherwise specified. Symbol | Parameter APT20GF120BR UNIT Voces | Collector-Emitter Voltage { 1200 Vogr | Collector-Gate Voltage (Rog = 20KQ) <p \ 1200 <5 Volts Vec Emitter-Collector Voltage OO a 15 VocE Gate-Emitter Voltage +20 & _ > loy Continuous Collector Current @ Tg = 25C a Varo 32 loo Continuous Collector Current @ Tg = 90C \) 20 A = mps lon Pulsed Collector Current @T. =25C AO 64 lome Pulsed Collector Current @Tc= 90C > 40 Wy Eas Single Pulse Avalanche Energy OWLS 22 md Pp Total Power Dissipation a Oo 200 Watts Ty,T Operating and Storage Junctio spatuire Range -55 to 150 JT ste on Temperat C TL Max. Lead Temp. for Soldering: 0.063 from Case for 10 Sec. 300 TERISTICS STATIC ELECTRICAL CHARAC Ss aN Symbol | Characteristic / Test Conditions MIN TYP MAX UNIT BVces | Collector-Emitter Breakdown Voltage (Vg = OV, Io = 0.8mA) 1200 RBVceg | Collector-Emitter Reverse Breakdown Voltage (Vep = OV, Io = 50MA) -15 Vge(TH) | Gate Threshold Voltage (Voce = Veg, Io = 350pA, T; = 25C) 45 5.5 6.5 Volts Vog(ON) Collector-Emitter On Voltage (Vge = 15V, Ig = 15A, Tj = 25C) 2.7 3.2 ve Collector-Emitter On Voltage (Vg = 15V, Io = 15A, T) = 125C) 3.3 | 39 Collector Cut-off Current (Voce = Voces, Vee = OV, Tj = 25C) 0.8 Collector Cut-off Current (Vce = Voces, Vae = OV, Tj = 125C) 5.0 lees Gate-Emitter Leakage Current (Vge = +20V, Voge = OV) +100 nA Was CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. USA ( APT Website - htip:/www.advancedpower.com } 405 S.W. Columbia Street Bend, Oregon 97702-1035 Phone: (541) 382-8028 FAX: (541) 388-0364 EUROPE Avenue J.F. Kennedy Bat B4 Parc Cadra Nord F-33700 Merignac - France Phone: (33) 557921515 FAX: (33) 5 56 47 97 61 052-6214 RevA052-6214 RevA DYNAMIC CHARACTERISTICS APT20GF120BR Symbol | Characteristic Test Conditions MIN TYP MAX UNIT Cies | Input Capacitance Capacitance 1100 | 1350 C Output Capacit Voe = OV 110 | 165 F oes utput Capacitance Voe = 25V p Cres Reverse Transfer Capacitance f=1MHz 70 105 Qg Total Gate Charge Gate Charge 95 150 Gate-Emitter Ch Vor = 18V 13 | 20 c Qge ate-Emitter Charge Veo = 0.5V ces K\ n Qge Gate-Collector ("Miller") Charge lo=los _ 55 85 ty(on) | Turn-on Delay Time Resistive Switchin a5c).| 17 = L7 t, Rise Time Vee = 18V 75 Voc = 0. Vices ns ty(off) | Turn-off Delay Time IS Noo 95 i Fall Time =40 170 Lom ty(on) | Turn-on Delay Time NS 20 30 t Rise Time att ive Switching (150C) 35 70 ng ty(off) | Turn-off Delay Time p(Peak) = 0.66Vces 175 260 a KO Vee = 15V te Fall Time BY ys lo=lop 90 135 Eon Turn-on Switching Energy KL 5 Rg = 102 1.2 ME _ Eo Turn-off Switching Energy) LN Ty = #1508C 1.3 md E,, | Total Switching Losses 25 ty(on) | Turn-on Delay Time Inductive Switching (25C) 20 t, Rise Time Votamp(Peak) = 0.66Vces 35 Vege = 15V ns ty(off) | Turn-off Delay Time Ina | 150 c=!ce t Fall Time Rg = 10 90 Ets Total Switching Losses Ty= +25C 23 mJ gfe Forward Transconductance Voge = 20V, Io = 15A 12 S THERMAL CHARACTERISTICS Symbol | Characteristic MIN TYP MAX UNIT Rejc | Junction to Case 0.63 CAN Resa | Junction to Ambient 80 Torque | Mounting Torque using a 6-32 or 3mm Binding Head Machine Screw 10 Ibein @ Repetitive Rating: Pulse width limited by maximum junction temperature. @ Io = 15A, Veo = SOV, Ree = 2502, L = 200nH, Tj = 25C @ See MIL-STD-750 Method 3471 APT Reserves the right to change, without notice, the specifications and information contained herein.ADVANCED POWER TECHNOLOGY APT20GF120BR PRELIMINARY Power dissipation Prot = (Tc) parameter: Tj < 150C 220 Ww \ 180 \ tot 160 \ 140 \ 120 \ 100 N 80 60 \ 40 \ 20 \ 0 20 40 60 80 100 120 C 160 T, c Safe operating area Io = F(Voe) parameter: D=0, 7, = 25C, yj < 150C 102 t= 9.0yus 10 L 101 10 DC 10-1 10 10 10 10 Vv Vor Collector current Io = (Tc) parameter: Vee 215 V, 7, < 150C 32 24 0 20 40 60 80 100 120 C 160 ele Transient thermal impedance IGBT Zn sc = Ftp) parameter: D = ty / T 10 K/W 10-2 10-3 10 EUROPE Avenue J.F. Kennedy Bat B4 Pare Cadra Nord USA 405 S.W. Columbia Street F-33700 Merignac - France Bend, Oregon 97702-1035 Phone: (33)557921515 FAX: (33)556 479761 Phone: (541) 382-8028 FAX: (541) 388-0364 052-6214 Rev A052-6214 RevA ADVANCED APT20GF120BR POWER TECHNOLOGY PRELIMINARY Typ. gate charge Typ. capacitances Vee = f(Qgate) C= f (Voce) parameter: Ic puis = 16A parameter: Veg = 0 V, f= 1 MHz 20 101 v nF Voz 1 c 14 40 0 12 10 8 10-1 6 4 2 0 10-2 0 10 20 30 40 50 60 70 80 100 oT Qeate Short circuit safe operating area Reverse biased safe operating area Iosc = f (Voce) ; 7; = 150C Iopuls =f(Vce) , Tj = 150C parameter: Vee=+15V,i,.5 10s, L <25nH parameter: Vee = 15 V 10 2.5 lose! lee lepuise/le4 6 1.5 4 1.0 2 0.5 0 0.0 0 200 400 600 800 1000 1200 V_ 1600 0 200 400 600 800 1000 1200 V_ 1600 _ Vor __ Vor EUROPE Avenue J.F. Kennedy Bat B4 Parc Cadra Nord F-33700 Merignac - France Phone: (33) 557921515 FAX: (33) 5 56 47 97 61 USA 405 S.W. Columbia Street Bend, Oregon 97702-1035 Phone: (541) 382-8028 FAX: (541) 388-0364ADVANCED APT20GF120BR POWER TECHNOLOGY PRELIMINARY Typ. output characteristics Typ. output characteristics Io = f(Vce) Io = f (Vee) parameter: f, = 80 us, 7) = 25C parameter: f, = 80 us, 7] = 125 C 30 A 30 A 22 20 18 | 24 22 20 18 16 16 14 12 14 12 on fF @D & on fF @D & Typ. transfer characteristics Io = f (Vee) parameter: f, = 80 Us, Veg = 20 V 30 A I 24 22 20 18 16 14 12 On fF @D @& EUROPE Avenue J.F. Kennedy Bat B4 Parc Cadra Nord F-33700 Merignac - France Phone: (33) 557921515 FAX: (33) 5 56 47 97 61 USA 405 S.W. Columbia Street Bend, Oregon 97702-1035 Phone: (541) 382-8028 FAX: (541) 388-0364 052-6214 Rev A