© 2013 IXYS CORPORATION, All Rights Reserved
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25°C to 150°C - 600 V
VDGR TJ= 25°C to 150°C, RGS = 1MΩ- 600 V
VGSS Continuous ±20 V
VGSM Transient ±30 V
ID25 TC= 25°C - 16 A
IDM TC= 25°C, Pulse Width Limited by TJM - 48 A
IATC= 25°C - 16 A
EAS TC= 25°C 2.5 J
dv/dt IS≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C 10 V/ns
PDTC= 25°C 460 W
TJ- 55 ... +150 °C
TJM 150 °C
Tstg - 55 ... +150 °C
TL1.6mm (0.062 in.) from Case for 10s 300 °C
TSOLD Plastic Body for 10s 260 °C
MdMounting Torque (TO-247) 1.13 / 10 Nm/lb.in.
Weight TO-268 4 g
TO-247 6 g
DS99988B(01/13)
Symbol Test Conditions Characteristic Values
(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.
BVDSS VGS = 0V, ID = - 250μA - 600 V
VGS(th) VDS = VGS, ID = - 250μA - 2.0 - 4.0 V
IGSS VGS = ±20V, VDS = 0V ±100 nA
IDSS VDS = VDSS, VGS = 0V - 25 μA
TJ = 125°C - 200 μA
RDS(on) VGS = -10V, ID = 0.5 • ID25, Note 1 720 mΩ
PolarPTM
Power MOSFETs
P-Channel Enhancement Mode
Avalanche Rated
IXTH16P60P
IXTT16P60P
VDSS = - 600V
ID25 = - 16A
RDS(on) ≤≤
≤≤
≤ 720mΩΩ
ΩΩ
Ω
Features
zInternational Standard Packages
zAvalanche Rated
zRugged PolarPTM Process
zFast intrinsic Diode
zLow Package Inductance
Advantages
zEasy to Mount
zSpace Savings
zHigh Power Density
Applications
zHigh-Side Switches
zPush-Pull Amplifiers
zDC Choppers
zCurrent Regulators
zAutomatic Test Equipment
G = Gate D = Drain
S = Source Tab = Drain
TO-247 (IXTH)
G
SD (Tab)
D
TO-268 (IXTT)
S
G
D (Tab)
IXTH16P60P
IXTT16P60P
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
Symbol Test Conditions Characteristic Values
(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.
gfs VDS = -10V, ID = 0.5 • ID25, Note 1 11 18 S
Ciss 5120 pF
Coss VGS = 0V, VDS = - 25V, f = 1MHz 445 pF
Crss 60 pF
td(on) 29 ns
tr 25 ns
td(off) 60 ns
tf 38 ns
Qg(on) 92 nC
Qgs VGS = -10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 27 nC
Qgd 23 nC
RthJC 0.27 °C/W
RthCS 0.21 °C/W
Source-Drain Diode
Symbol Test Conditions Characteristic Values
(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.
ISVGS = 0V - 16 A
ISM Repetitive, Pulse Width Limited by TJM - 64 A
VSD IF = - 8A, VGS = 0V, Note 1 - 2.8 V
trr 440 ns
QRM 7.4 μC
IRM - 33.6 A
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Note 1: Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
Resistive Switching Times
VGS = -10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 3Ω (External)
IF = - 8A, -di/dt = -150A/μs
VR = -100V, VGS = 0V
e
∅ P
TO-247 Outline
1 2 3
Terminals: 1 - Gate 2 - Drain
3 - Source
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.7 5.3 .185 .209
A12.2 2.54 .087 .102
A22.2 2.6 .059 .098
b 1.0 1.4 .040 .055
b11.65 2.13 .065 .084
b22.87 3.12 .113 .123
C .4 .8 .016 .031
D 20.80 21.46 .819 .845
E 15.75 16.26 .610 .640
e 5.20 5.72 0.205 0.225
L 19.81 20.32 .780 .800
L1 4.50 .177
∅P 3.55 3.65 .140 .144
Q 5.89 6.40 0.232 0.252
R 4.32 5.49 .170 .216
S 6.15 BSC 242 BSC
TO-268 Outline
Terminals: 1 - Gate 2 - Drain
3 - Source 4 - Drain
© 2013 IXYS CORPORATION, All Rights Reserved
IXTH16P60P
IXTT16P60P
Fi g . 1. Ou tp u t C h ar acter i sti cs @ T
J
= 25ºC
-16
-14
-12
-10
-8
-6
-4
-2
0-11-10-9-8-7-6-5-4-3-2-10
V
DS
- Vo lts
I
D
- Ampe res
V
GS
= - 10V
- 7V
- 5
V
- 6
V
Fig. 2. Extended Output Characteristics @ T
J
= 25ºC
-38
-34
-30
-26
-22
-18
-14
-10
-6
-2
-30-25-20-15-10-50
V
DS
- Vo lts
I
D
- Amperes
V
GS
= - 10V
- 7V
- 6
V
- 5
V
Fi g . 3. Ou tp u t C h ar acter i sti cs @ T
J
= 125ºC
-16
-14
-12
-10
-8
-6
-4
-2
0-20-15-10-50
V
DS
- Vo lts
I
D
- Amper es
V
GS
= - 10V
- 7V
- 6
V
- 5
V
Fig. 4. R
DS(on)
Normalized to I
D
= - 8A Value vs.
Junction T emperature
0.4
0.8
1.2
1.6
2.0
2.4
-50 -25 0 25 50 75 100 125 150
T
J
- Degrees Centigrade
R
DS(on)
- Normali zed
V
GS
= - 10V
I
D
= -16
A
I
D
= - 8
A
Fig. 5. R
DS(on)
Norm alized to I
D
= - 8A Value vs.
Drain Current
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
-35-30-25-20-15-10-50
I
D
- A mperes
R
DS(on)
- Normalized
V
GS
= - 10V
T
J
= 25ºC
T
J
= 125ºC
Fi g . 6. Maximum Dr ai n C u r r ent vs.
Case Temper atu r e
-18
-16
-14
-12
-10
-8
-6
-4
-2
0-50 -25 0 25 50 75 100 125 150
T
C
- Degrees Centigrade
I
D
- Amper es
IXTH16P60P
IXTT16P60P
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
Fig. 7. Input Adm ittance
-20
-18
-16
-14
-12
-10
-8
-6
-4
-2
0-6.0-5.5-5.0-4.5-4.0-3.5
V
GS
- Vo lts
I
D
- Amperes
T
J
= 125ºC
25ºC
- 40ºC
Fig. 8. Transconductance
0
4
8
12
16
20
24
28
32
-20-15-10-50
I
D
- Amperes
g
f s
- Siemens
T
J
= - 40ºC
125ºC
25ºC
Fig. 9. Forward Voltage Drop of Intrinsic Diode
-50
-45
-40
-35
-30
-25
-20
-15
-10
-5
0-3.5-3.0-2.5-2.0-1.5-1.0-0.5
V
SD
- Vo lts
I
S
- Amper es
T
J
= 125ºC
T
J
= 25ºC
Fi g . 10. Gate C h ar g e
-10
-9
-8
-7
-6
-5
-4
-3
-2
-1
00 102030405060708090100
Q
G
- NanoCoulombs
V
GS
- Volts
V
DS
= - 300V
I
D
= - 8A
I
G
= -1mA
Fig. 11. Capacitance
10
100
1,000
10,000
-40-35-30-25-20-15-10-50
V
DS
- Vo lts
Capacitance - PicoFarads
f
= 1 MHz
Ciss
Crss
Coss
Fi g . 12. F o r war d -B i as Safe Op er ati n g Area
0.1
1
10
100
10 100 1000
V
DS
- Vo lts
I
D
- Ampe res
T
J
= 150ºC
T
C
= 25ºC
Single Pulse
100µs
R
DS(on)
Limit
-
-- -
-
-
1ms
-
100ms
10ms
DC
© 2013 IXYS CORPORATION, All Rights Reserved IXYS REF: T_16P60P (B7) 6-03-08
IXTH16P60P
IXTT16P60P
Fi g . 13. Maximu m Tran si en t Th er mal I mp edan ce
0.001
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z
(th)JC
- º C / W
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evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,
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