2SC5915
No.7408-1/4
Applications
•Relay drivers, lamp drivers, motor drivers, inverters.
Features
•Adoption of MBIT process.
•Large current capacitance.
•Low collector-to-emitter saturation voltage.
•High-speed switching.
•Surface mount type.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Collector-to-Base Voltage VCBO 120 V
Collector-to-Emitter Voltage VCES 120 V
Collector-to-Emitter Voltage VCEO 50 V
Emitter-to-Base Voltage VEBO 6V
Collector Current IC10 A
Collector Current (Pulse) ICP 15 A
Base Current IB2A
Collector Dissipation PC1.65 W
Tc=25°C25W
Junction Temperature Tj 150 °C
Storage Temperature Tstg --55 to +150 °C
Ordering number : EN7408A
22410FA TK IM / 13003 TS IM TA-100348
SANYO Semiconductors
DATA SHEET
2SC5915 NPN Epitaxial Planar Silicon Transistors
High-Current Switching Applications
www.semiconductor-sanyo.com/network
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer
'
s products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer
'
s products or
equipment.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
2SC5915
No.7408-2/4
Electrical Characteristics at Ta=25°C
Ratings
Parameter Symbol Conditions min typ max Unit
Collector Cutoff Current ICBO VCB=40V, IE=0A 10 μA
Emitter Cutoff Current IEBO VEB=4V, IC=0A 10 μA
DC Current Gain hFE1V
CE=2V, IC=1A 200 560
hFE2V
CE=2V, IC=5A 100
Gain-Bandwidth Product fTVCE=5V, IC=1A 200 MHz
Output Capacitance Cob VCB=10V, f=1MHz 60 pF
Collector-to-Emitter Saturation Voltage VCE(sat) IC=5A, IB=250mA 180 360 mV
Base-to-Emitter Saturation Voltage VBE(sat) IC=5A, IB=250mA 0.93 1.4 V
Collector-to-Base Breakdown Voltage V(BR)CBO IC=100μA, IE=0A 120 V
Collector-to-Emitter Breakdown Voltage V(BR)CES IC=100μA, RBE=0Ω120 V
Collector-to-Emitter Breakdown Voltage V(BR)CEO IC=1mA, RBE=∞50 V
Emitter-to-Base Breakdown Voltage V(BR)EBO IE=100μA, IC=0A 6 V
T urn-On Time ton See specified test circuit.
40
ns
Storage T ime tstg See specified test circuit. 1000 ns
Fall T ime tfSee specified test circuit.
80
ns
Package Dimensions Package Dimensions
unit : mm (typ) unit : mm (typ)
7513-004 7001-002
Switching Time Test Circuit
VRRB
VCC=20VVBE= --5V
++
50Ω
INPUT
OUTPUT
RL
100μF 470μF
PW=20μsIB1
D.C.≤1% IB2
IC=20IB1= --20IB2=3A
10.2
8.8
1.5MAX
2.7
9.9
3.0
0.2
1.3
4.5
0.8
1.35
0.4
1.4
1.2
2.55
2.55
0 to 0.3
12 3
2.55
2.55
1 : Base
2 : Collector
3 : Emitter
SANYO : SMP-FD
2SC5915
No.7408-3/4
IT05553 IT05554
IT05555
0 0.2 0.4 0.6 0.8 1.0 1.2
IT05556
23 57
0.10.01 23 57
1.0 10
23 75
0
10
8
6
4
2
9
7
5
3
1
0 1.0 2.0 3.0 5.04.00.5 1.5 2.5 3.5 4.5
IB=0
mA
10mA
20mA
30mA
40mA
50mA
0
2
4
6
8
10
12
VCE=2V
Ta=75
°
C
--25°C
25
°
C
3
0.01
0.1
2
3
5
7
5
7
1.0
2
3
5
7
Ta=75
°
C
--25
°
C
IC / IB=20
60mA
70mA
80mA
90mA
100mA
0
5.0
4.0
3.0
2.0
1.0
4.5
3.5
2.5
1.5
0.5
0246 10813579
IB=0
mA
20mA
2mA
4mA
6mA
8mA
10mA
12mA
14mA
16mA
18mA
25°C
IC -- VCE
IC -- VBE
Collector Current, IC -- A
Base-to-Emitter Voltage, VBE -- V
Collector Current, IC -- A
Collector-to-Emitter Voltage, VCE -- V
IC -- VCE
Collector Current, IC -- A
Collector-to-Emitter Voltage, VCE -- V
VCE(sat) -- IC
Collector Current, IC -- A
1.0 100.10.01 IT05559
275323725573
3
2
10
100
2
3
5
7
1000
5
7
25°C
--25°C
Ta=75°C
VCE=2V
hFE -- IC
Collector Current, IC -- A
DC Current Gain, hFE
IT05561
1.0 100.10.01
2
100
10
2
3
5
7
1000
275323725573
3
5
7
VCE=5V
fT -- IC
Collector Current, IC -- A
Gain-Brandwidth Product, fT -- MHz
10 1001.00.1 275323725573
5
2
100
10
3
5
7
7
2
1000
3
5
7
IT05560
f=1MHz
Cob -- VCB
Collector-to-Base Voltage, VCB -- V
Output Capacitance, Cob -- pF
7532 1.0 100.10.01 57237532
IT05557
0.01
2
0.1
1.0
3
5
7
2
3
5
7
2
IC / IB=50
Ta=75°C
25
°
C
--25°C
VCE(sat) -- IC
Collector Current, IC -- A
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- V
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- V
2SC5915
No.7408-4/4
PS
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd.
products described or contained herein.
SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all
semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or
malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise
to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt
safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not
limited to protective circuits and error prevention circuits for safe design, redundant design, and structural
design.
Upon using the technical information or products described herein, neither warranty nor license shall be granted
with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third
party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party’s
intellectual property rights which has resulted from the use of the technical information and products mentioned
above.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed
for volume production.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
SANYO Semiconductor Co.,Ltd. product that you intend to use.
In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are
controlled under any of applicable local export control laws and regulations, such products may require the
export license from the authorities concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise,
without the prior written consent of SANYO Semiconductor Co.,Ltd.
IT05562
IT05563
0 20 40 60 80 100 120 140 160
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
1.65
23 5
0.1 71.0 23 57
10 23 57
0.01
2
0.1
1.0
2
3
5
7
3
5
7
10
2
3
5
7
2
3
1.0 100.10.01 IT05558
2
1.0
0.1
2
3
5
7
10
275323725573
3
5
7
25
°
C
75°C
Ta= --25°C
IC / IB=20
Tc=25°C
Single pulse
ICP=15A
IC=10A
DC operation
100ms ≤10μs50μs
10ms
500
μ
s
100μs
1ms
IT05564
0 20 40 60 80 100 120 140 160
0
5
10
15
20
25
30
VBE(sat) -- IC
Collector Current, IC -- A
PC -- Ta
No heat sink
PC -- Tc
A S O
Collector-to-Emitter Voltage, VCE -- V
Collector Current, IC -- A
Ambient Temperature, Ta -- °C
Collector Dissipation, PC -- W
Case Temperature, Tc -- °C
Collector Dissipation, PC -- W
Base-to-Emitter
Saturation Voltage, VBE(sat) -- V
This catalog provides information as of February, 2010. Specifications and information herein are subject
to change without notice.
