V40PW45C
www.vishay.com Vishay General Semiconductor
Revision: 11-Feb-2019 1Document Number: 87655
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High Current Density Surface-Mount
TMBS® (Trench MOS Barrier Schottky) Rectifier
Ultra Low VF = 0.33 V at IF = 5 A
DESIGN SUPPORT TOOLS
FEATURES
• Very low profile - typical height of 1.3 mm
• Trench MOS Schottky technology
• Ideal for automated placement
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
• AEC-Q101 qualified available
- Automotive ordering code: base P/NHM3
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in low voltage high frequency DC/DC converters,
freewheeling diodes, and polarity protection applications.
MECHANICAL DATA
Case: SlimDPAK (TO-252AE)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant
Base P/NHM3 - halogen-free, RoHS-compliant, and
AEC-Q101 qualified
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 and HM3 suffix meets JESD 201 class 2 whisker test
Notes
(1) With infinite heatsink
(2) The heat generated must be less than the thermal conductivity from junction to ambient: dPD/dTJ < 1/RJA
PRIMARY CHARACTERISTICS
IF(AV) 40 A
VRRM 45 V
IFSM 240 A
VF at IF = 20 A (TA = 125 °C) 0.49 V
TJ max. 150 °C
Package SlimDPAK (TO-252AE)
Circuit configuration Common cathode
SlimDPAK (TO-252AE)
eSMP
®
Series
1
2
K
PIN 1 K
HEATSINK
PIN 2
click logo to get started
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL V40PW45C UNIT
Device marking code V40PW45C
Maximum repetitive peak reverse voltage VRRM 45 V
Maximum average forward rectified current (Fig. 1) per device IF(AV) (1) 40 A
per diode 20 A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode IFSM 240 A
Operating junction temperature range TJ (2) -40 to +150 °C
Storage temperature range TSTG -55 to +150 °C