© Semiconductor Components Industries, LLC, 2011
November, 2011 Rev. 3
Publication Order Number:
BC80725W/D
1
BC807-25W, SBC807-25W,
BC807-40W, SBC807-40W
General Purpose
Transistors
PNP Silicon
Features
AECQ101 Qualified and PPAP Capable
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements
These Devices are PbFree, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector Emitter Voltage VCEO 45 V
Collector Base Voltage VCBO 50 V
Emitter Base Voltage VEBO 5.0 V
Collector Current Continuous IC500 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR5 Board,
(Note 1) TA = 25°C
PD
460 mW
Thermal Resistance,
JunctiontoAmbient
RqJA 272 °C/W
Junction and Storage Temperature TJ, Tstg 55 to +150 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR4 Board, 1 oz. Cu, 100 mm2.
SC70
CASE 419
STYLE 3
1
2
3
http://onsemi.com
COLLECTOR
3
1
BASE
2
EMITTER
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
ORDERING INFORMATION
1
5x M G
G
5x = Device Code
x = B or C
M = Date Code*
G=PbFree Package
MARKING DIAGRAM
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
BC80725W, SBC80725W, BC80740W, SBC80740W
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
CollectorEmitter Breakdown Voltage
(IC = 10 mA)
V(BR)CEO 45 V
CollectorEmitter Breakdown Voltage
(VEB = 0, IC = 10 mA)
V(BR)CES 50 V
EmitterBase Breakdown Voltage
(IE = 1.0 mA)
V(BR)EBO 5.0 V
Collector Cutoff Current
(VCB = 20 V)
(VCB = 20 V, TJ = 150°C)
ICBO
100
5.0
nA
mA
ON CHARACTERISTICS
DC Current Gain
(IC = 100 mA, VCE = 1.0 V) BC80725, SBC80725
BC80740, SBC80740
(IC = 500 mA, VCE = 1.0 V)
hFE
160
250
40
400
600
CollectorEmitter Saturation Voltage
(IC = 500 mA, IB = 50 mA)
VCE(sat) 0.7 V
Base Emitter On Voltage
(IC = 500 mA, IB = 1.0 V)
VBE(on) 1.2 V
SMALLSIGNAL CHARACTERISTICS
CurrentGain Bandwidth Product
(IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz)
fT100 MHz
Output Capacitance
(VCB = 10 V, f = 1.0 MHz)
Cobo 10 pF
ORDERING INFORMATION
Device Specific Marking Package Shipping
BC80725WT1G
5B SC70
(PbFree)
3000 / Tape & Reel
SBC80725T1G
BC80725WT3G 10,000 / Tape & Reel
BC80740WT1G
5C SC70
(PbFree)
3000 / Tape & Reel
SBC80740WT1G
BC80740WT3G 10,000 / Tape & Reel
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
BC80725W, SBC80725W, BC80740W, SBC80740W
http://onsemi.com
3
TYPICAL CHARACTERISTICS BC80725W, SBC80725W
Figure 1. DC Current Gain vs. Collector
Current
Figure 2. Collector Emitter Saturation Voltage
vs. Collector Current
IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
0.10.010.001
0
100
200
300
400
500
10.10.010.001
0.01
0.1
1
Figure 3. Base Emitter Saturation Voltage vs.
Collector Current
Figure 4. Base Emitter Voltage vs. Collector
Current
IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
10.10.010.0010.0001
0.2
0.3
0.5
0.6
0.7
0.8
1.0
1.1
10.10.010.0010.0001
0.2
0.3
0.5
0.6
0.8
0.9
1.0
1.2
hFE, DC CURRENT GAIN
VCE(sat), COLLECTOREMITTER
SATURATION VOLTAGE (V)
VBE(sat), BASEEMITTER
SATURATION VOLTAGE (V)
VBE(on), BASEEMITTER VOLTAGE (V)
1
VCE = 1 V
150°C
55°C
25°C
IC/IB = 10
150°C
55°C
25°C
0.4
0.9
IC/IB = 10
150°C
55°C
25°C
0.4
0.7
1.1 VCE = 5 V
150°C
55°C
25°C
Figure 5. Current Gain Bandwidth Product vs.
Collector Current
IC, COLLECTOR CURRENT (A)
10001010.1
10
100
fT
, CURRENTGAINBANDWIDTH
PRODUCT (MHz)
VCE = 1 V
TA = 25°C
1000
100
BC80725W, SBC80725W, BC80740W, SBC80740W
http://onsemi.com
4
TYPICAL CHARACTERISTICS BC80725W, SBC80725W
IB, BASE CURRENT (mA)
Figure 6. Saturation Region
100
10
1.0
VR, REVERSE VOLTAGE (VOLTS)
Figure 7. Temperature Coefficients
+1.0
IC, COLLECTOR CURRENT
Figure 8. Capacitances
-0.1 -1.0-1.0 -10 -100 -1000
-2.0
-1.0
0
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS
)
V, TEMPERATURE COEFFICIENTS (mV/ C)°θ
C, CAPACITANCE (pF)
-1.0
-0.8
-0.6
-0.4
-0.2
0
-0.01 -0.1 -10 -100-1.0
-10 -100
TJ = 25°C
IC = -10 mA
IC = -100 mA
IC = -300 mA
IC =
-500 mA
qVC for VCE(sat)
qVB for VBE
Cob
Cib
BC80725W, SBC80725W, BC80740W, SBC80740W
http://onsemi.com
5
TYPICAL CHARACTERISTICS BC80740W, SBC80740W
Figure 9. DC Current Gain vs. Collector
Current
Figure 10. Collector Emitter Saturation Voltage
vs. Collector Current
IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
0.10.010.001
0
200
400
600
800
1000
10.10.010.001
0.01
0.1
1
Figure 11. Base Emitter Saturation Voltage vs.
Collector Current
Figure 12. Base Emitter Voltage vs. Collector
Current
IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
10.10.010.0010.0001
0.2
0.3
0.5
0.6
0.7
0.8
1.0
1.1
10.10.010.0010.0001
0.2
0.3
0.5
0.6
0.8
0.9
1.0
1.2
hFE, DC CURRENT GAIN
VCE(sat), COLLECTOREMITTER
SATURATION VOLTAGE (V)
VBE(sat), BASEEMITTER
SATURATION VOLTAGE (V)
VBE(on), BASEEMITTER VOLTAGE (V)
1
VCE = 1 V
150°C
55°C
25°C
IC/IB = 10
150°C
55°C
25°C
0.4
0.9
IC/IB = 10
150°C
55°C
25°C
0.4
0.7
1.1 VCE = 5 V
150°C
55°C
25°C
Figure 13. Current Gain Bandwidth Product
vs. Collector Current
IC, COLLECTOR CURRENT (A)
10001010.1
10
100
fT
, CURRENTGAINBANDWIDTH
PRODUCT (MHz)
VCE = 1 V
TA = 25°C
1000
100
100
300
500
700
900
BC80725W, SBC80725W, BC80740W, SBC80740W
http://onsemi.com
6
TYPICAL CHARACTERISTICS BC80740W, SBC80740W
IB, BASE CURRENT (mA)
Figure 14. Saturation Region
100
10
1.0
VR, REVERSE VOLTAGE (VOLTS)
Figure 15. Temperature Coefficients
+1.0
IC, COLLECTOR CURRENT
Figure 16. Capacitances
-0.1 -1.0-1.0 -10 -100 -1000
-2.0
-1.0
0
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS
)
V, TEMPERATURE COEFFICIENTS (mV/ C)°θ
C, CAPACITANCE (pF)
-1.0
-0.8
-0.6
-0.4
-0.2
0
-0.01 -0.1 -10 -100-1.0
-10 -100
TJ = 25°C
IC = -10 mA
IC = -100 mA
IC = -300 mA
IC =
-500 mA
qVC for VCE(sat)
qVB for VBE
Cob
Cib
BC80725W, SBC80725W, BC80740W, SBC80740W
http://onsemi.com
7
TYPICAL CHARACTERISTICS BC80725W, SBC80725W, BC80740W, SBC80740W
Figure 17. Safe Operating Area
VCE, COLLECTOR EMITTER VOLTAGE (V)
1001010.1
0.001
0.01
0.1
1
IC, COLLECTOR CURRENT (A)
Thermal Limit
100 mS
1 S
10 mS
1 mS
1000
0.01 0.1 1 10 100 1000
10
D = 0.5
Rthja(t), TRANSIENT THERMAL RESPONSE (°C/W)
Figure 18. Thermal Response
0.2
0.1
0.05
0.02
0.01
Single Pulse
t, PULSE TIME (s)
1
0.00001 0.0001 0.0010.000001
100
BC80725W, SBC80725W, BC80740W, SBC80740W
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8
PACKAGE DIMENSIONS
SC70 (SOT323)
CASE 41904
ISSUE N
AA2
D
e1
b
e
E
A1
c
L
3
12
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
0.05 (0.002)
HE
DIM
A
MIN NOM MAX MIN
MILLIMETERS
0.80 0.90 1.00 0.032
INCHES
A1 0.00 0.05 0.10 0.000
A2 0.70 REF
b0.30 0.35 0.40 0.012
c0.10 0.18 0.25 0.004
D1.80 2.10 2.20 0.071
E1.15 1.24 1.35 0.045
e1.20 1.30 1.40 0.047
0.035 0.040
0.002 0.004
0.014 0.016
0.007 0.010
0.083 0.087
0.049 0.053
0.051 0.055
NOM MAX
L
2.00 2.10 2.40 0.079 0.083 0.095
HE
e1 0.65 BSC
0.38
0.028 REF
0.026 BSC
0.015
0.20 0.56 0.008 0.022
1.9
0.075
0.65
0.025
0.65
0.025
0.9
0.035
0.7
0.028 ǒmm
inchesǓ
SCALE 10:1
*For additional information on our PbFree strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
STYLE 3:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
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BC80725W/D
PUBLICATION ORDERING INFORMATION
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USA/Canada
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Phone: 81358171050
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