VRRM = IF = 1700 V 150 A Fast-Diode Die 5SLX 12K1711 Die size: 11.9 x 11.9 mm Doc. No. 5SYA1662-01 Feb. 05 * * * * Fast and soft reverse-recovery Low losses High SOA Passivation: SIPOS Nitride plus Polyimide Maximum rated values 1) Parameter Symbol Repetitive peak reverse voltage Continuous forward current Repetitive peak forward current Junction temperature 1) min Unit VRRM 1700 V IF 150 A 300 A -40 125 C min typ max Unit 1.4 1.65 2.0 V Limited by Tvjmax Tvj Maximum rated values indicate limits beyond which damage to the device may occur per IEC 60747 - 2 Diode characteristic values Parameter 2) Symbol Conditions Continuous forward voltage VF IF = 150 A Continuous reverse current IR VR = 1700 V Peak reverse recovery current Irr Recovered charge Qrr Reverse recovery time trr Reverse recovery energy 2) max IFRM Conditions Erec IF = 150 A, VR = 900 V, di/dt = 800 A/s, L = 800 nH, Inductive load, Switch: 2x 5SMX12K1701 Tvj = 25 C Tvj = 125 C 1.7 Tvj = 25 C V 100 A Tvj = 125 C 3 mA Tvj = 25 C 118 A Tvj = 125 C 146 A Tvj = 25 C 43 C Tvj = 125 C 73 C Tvj = 25 C 460 ns Tvj = 125 C 660 ns Tvj = 25 C 32 mJ Tvj = 125 C 53 mJ Characteristic values according to IEC 60747 - 2 ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. 5SLX 12K1711 300 100 200 Vcc = 900 V di/dt = 800 A/s Tvj = 125 C L = 800 nH 250 25C Irr 75 150 125C 150 50 100 Qrr Qrr [C], Irr [A] Erec [mJ] IF [A] 200 100 25 50 Erec 50 0 0 0.5 1 1.5 2 2.5 50 100 Typical diode forward characteristics VCC = 900 V IF = 150 A di/dt = 800 A/s Tvj = 125 C L = 800 nH 150 200 -400 IR 200 Vcc = 900 V IF = 150 A Tvj = 125 C L = 800 nH 75 -600 Irr 150 50 100 Qrr Erec VR -100 -800 25 50 -1000 -150 0 400 800 1200 1600 2000 -1200 2400 0 Typical diode reverse recovery behaviour 0 0 time [ns] Fig. 3 300 100 VR [V] 50 IF [A] -200 -50 250 Typical reverse recovery characteristics vs. forward current 0 100 0 Fig. 2 Erec [mJ] 200 200 IF [A] VF [V] Fig. 1 150 Qrr [C], Irr [A] 0 0 0 200 400 600 800 1000 1200 di/dt [A/s] Fig. 4 Typical reverse recovery vs. di/dt ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1662-01 Feb. 05 page 2 of 3 5SLX 12K1711 Mechanical properties Parameter Unit Dimensions Metallization 3) 3) Overall die L x W 11.9 x 11.9 mm exposed LxW front metal 9.9 x 9.9 mm thickness 385 15 m 4 m 1.2 m front (A) AlSi1 back (K) Al / Ti / Ni / Ag For assembly instructions refer to: IGBT and Diode chips from ABB Switzerland Ltd, Semiconductors, Doc. No. 5SYA 2033. Outline Drawing A (Anode) Note : All dimensions are shown in mm This product has been designed and qualified for Industrial Level. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. ABB Switzerland Ltd Semiconductors Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland Telephone Fax Email Internet +41 (0)58 586 1419 +41 (0)58 586 1306 abbsem@ch.abb.com www.abb.com/semiconductors Doc. No. 5SYA1662-01 Feb. 05