ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
VRRM
= 1700
V
IF = 150
A
Die size: 11.9 x 11.9 mm
Doc. No. 5SYA1662
-
01 Feb. 05
• Fast and soft reverse-recovery
• Low losses
• High SOA
• Passivation: SIPOS Nitride plus Polyimide
Maximum rated values 1)
Parameter Symbol Conditions min max Unit
Repetitive peak reverse voltage VRRM 1700
V
Continuous forward current IF 150 A
Repetitive peak forward current IFRM Limited by Tvjmax 300 A
Junction temperature Tvj -40 125 °C
1) Maximum rated values indicate limits beyond which damage to the device may occur per IEC 60747 - 2
Diode characteristic values 2)
Parameter Symbol Conditions min typ max Unit
Tvj = 25 °C
1.4 1.65 2.0 V
Continuous forward voltage VF IF = 150 A Tvj = 125 °C
1.7 V
Tvj = 25 °C
100 µA
Continuous reverse current IR VR = 1700 V Tvj = 125 °C
3 mA
Tvj = 25 °C
118 A
Peak reverse recovery current Irr Tvj = 125 °C
146 A
Tvj = 25 °C
43 µC
Recovered charge Qrr Tvj = 125 °C
73 µC
Tvj = 25 °C
460 ns
Reverse recovery time trr Tvj = 125 °C
660 ns
Tvj = 25 °C
32 mJ
Reverse recovery energy Erec
IF = 150 A,
VR = 900 V,
di/dt = 800 A/µs,
Lσ = 800 nH,
Inductive load,
Switch:
2x 5SMX12K1701
Tvj = 125 °C
53 mJ
2) Characteristic values according to IEC 60747 - 2
Fast-Diode Die
5SLX 12K1711
5SLX 12K1711
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1662-01 Feb. 05 page 2 of 3
0
50
100
150
200
250
300
00.5 1 1.5 2 2.5
VF [V]
IF [A]
125°C
25°C
0
25
50
75
100
0 50 100 150 200 250 300
IF [A]
Erec [mJ]
0
50
100
150
200
Qrr [µC], Irr [A]
Erec
Qrr
Irr
V
cc = 900 V
di/dt = 800 A/µs
Tvj = 125 °C
Lσ = 800 nH
Fig. 1 Typical diode forward characteristics Fig. 2 Typical reverse recovery characteristics
vs. forward current
-150
-100
-50
0
50
100
150
200
0400 800 1200 1600 2000 2400
time [ns]
IF [A]
-1200
-1000
-800
-600
-400
-200
0
200
VR [V]
IR
VR
VCC = 900 V
IF = 150 A
di/dt = 800 A/µs
Tvj = 125 °C
Lσ = 800 nH
0
25
50
75
100
0200 400 600 800 1000 1200
di/dt [A/µs]
Erec [mJ]
0
50
100
150
200
Qrr [µC], Irr [A]
Erec Qrr
Irr
V
cc = 900 V
IF = 150 A
Tvj = 125 °C
Lσ = 800 nH
Fig. 3 Typical diode reverse recovery behaviour Fig. 4 Typical reverse recovery vs. di/dt
5SLX 12K1711
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
ABB Switzerland Ltd Doc. No. 5SYA1662-01 Feb. 05
Semiconductors
Fabrikstrasse 3
CH-5600 Lenzburg, Switzerland
Telephone +41 (0)58 586 1419
Fax +41 (0)58 586 1306
Email abbsem@ch.abb.com
Internet www.abb.com/semiconductors
Mechanical properties
Parameter Unit
Overall die
L x W 11.9 x 11.9 mm
exposed
front metal
L x W 9.9 x 9.9 mm
Dimensions
thickness 385 ± 15 µm
front (A) AlSi1 4 µm
Metallization 3) back (K) Al / Ti / Ni / Ag 1.2 µm
3) For assembly instructions refer to: IGBT and Diode chips from ABB Switzerland Ltd, Semiconductors, Doc. No. 5SYA 2033.
Outline Drawing
A (Anode)
Note : All dimensions are shown in mm
This product has been designed and qualified for Industrial Level.
