IINIERSIL 2N5457-2N5459 N-Channel JFET ABSOLUTE MAXIMUM RATINGS (25C unless otherwise noted) CONFIGURATION TOPCORAPHY Vos Drain-Source Voltage ..........00ec cece cette 25V 10-92 5010 VpG Drain-Gate Voltage .........:. cece cee eet eens 25V pian Vegi) Reverse Gate-Source Voltage ....... 66-2. ee etna es 25V Lia aon Ter Ig Gate Current 0.0.0... 0c ce eee ete eee 10mA sn | al, Total Device Dissipation @ Ta = 25C,.....-.--. 310mW Nt ne Pp Derate above 25C... 6... ccc eee ee ees 2.82mWIC Ba eR Ty Operating Junction Temperature ..........-.0--- 435C nove eae Tstg Storage Temperature Range ..........- ~ 65 to + 150C : Seg a ORDERING INFORMATION TO-92 WAFER DICE 2N5457 2N5457/W" | 2N5457/D 2N54538 2N5458/W | 2N5458/D 2N5459 2N5459/W | 2N5459/D ELECTRICAL CHARACTERISTICS (25C unless otherwise specified) PARAMETER [min | tye | max [ units | TEST CONDITIONS OFF CHARACTERISTICS BVGss Gate-Source Breakdown Voltage | -25 ~60 Vv IG =-10 uA, Vos = 9 Igss Gate Reverse Current 05 xo nA vee - te y ve = 0. Ta = 100C -0.5 -6.0 2N5457 VGS(off) Gate-Source Cutoff Voltage -1.0 -7.0 Vv Vps= 15V,Ip =10nA 2N5458 : -20 -8.0 2N5459 2.5 Vps- 15 V, Ip = 100uA 2N5457 V6s Gate-Source Voltage 3.5 Vv Vos = 15 V, Ip = 200 4A 2N5458 45 Vps = 15 V, Ip = 400 uA 2N5459 ON CHARACTERISTICS . 1.0 3.0 5.0 2N5457 Ipss Zero Gate Voltage Drain 20 | 60 | 9.0 mA Vps= 15 V, VGs=0 2N5458 40 9.0 16 2N5459 DYNAMIC CHARACTERISTICS 1000 3000 5000 2N5457 lvfsl Forward Transter Admittance 1500 | 4000 5500 umho Vos = 16 V, Vgs = 0. f= 1kHz 2N5458 2000 ; 4500 6000 2N5459 lVos| Output Admittance 10 50 pumho Vps= 15 V, VGs = 90, f= 14 kHz Ciss Input Capacitance 4.5 7.0 pF Vps = 15 V, Vos =9,f=1 MHz Cregg, Reverse Transfer Capacitance 1.6 3.0 pF Vos = 15 V, Vgs = 0,f= 1 MHz 1-82