VCSELs | Communication Lasers | Photodiode Receivers | Fiber Optical Transceivers | Book Store | On Sale Items |
Green, Red, & Infrared Laser Diode Modules | Laser Diodes | Laser Accessories | Laser Products | Electroluminescent Products |
LASERMATE CORPORATION manufactures green, red, & infrared laser diode modules & products, including
diode pumped solid-state green lasers, laser sights, and green & red laser pointers, as well as fiber optic
components & products, including pigtailed & receptacle 1310 nm & 1550 nm communication laser diodes and
850 nm VCSEL (or Vertical Cavity Surface Emitting Laser) diodes as optical transmitters, connectorized GaAs
PIN & InGaAs PIN photodiodes as optical receivers, and integrated optical transmitters and receivers as optical
transceivers for 100 Mbps Fast Ethernet transceiver, 155 Mbps ATM transceiver, 622 Mbps ATM OC-12, 1.0625
Gbps Fiber Channel & 1.25 Gbps Gigabit Ethernet transceiver. We also supply VCSEL chip, 1D & 2D arrays,
GaAs PIN chip & array, InGaAs PIN chip & array, laser diodes, PIN photodiodes, diffractive optics, diode driver
circuit boards, and laser safety goggles.
Please click the item of interest below for more detail information.
VCSELs Green, Red, & Infrared Laser Diode Modules Laser Diodes Laser Accessories Electroluminescent Products
On Sale Items Green & Red Laser Pointers Communication Lasers Photodiode Receivers Fiber Optical Transceivers
SPECIAL OFFER! Green Laser Pointer only $199.00 each!
New Products:
Focusable 532 nm DPSS green laser modules
Connectorized 1310nm & 1550nm DFB laser diode modules
1310 nm & 1550nm 155Mbps STM-1 transmitter & receiver modules
1310 nm & 1550nm 155Mbps STM-4 transmitter & receiver modules
For order methods, terms & conditions, and order form, please click HOW TO ORDER.
VCSEL, Green, Red & Infrared Laser Modules & Optical Transceivers by Lasermate
Please update our
new address/phone
numbers!
Address:
20264 E. Carrey Road,
Walnut, CA 91789, USA
Tel: (909) 718-0999
Fax: (909)718-0998
E-mail: info@lasermate.com
Web:http://www.lasermate.com
Foods
for
Brain
Book Store
Laser●
Optics●
Electronics●
Fast Ethernet●
ATM●
Fiber
Channel
●
Gigabit
Ethernet
●
Safety●
To receive the fastest response, please call Lasermate
Corporation at (909) 718-0999.
You are visitor number since June 27,
1996
Local time: Walnut, California
Comments and Questions mail to: info@lasermate.com
Information contained herein is considered typical data. Lasermate Corporation reserves
the right to change or modify specifications of products at any time without notice.
Copyright © 1996-2000 by Lasermate Corporation. All rights reserved.
HOME | PRODUCT LIST | HOW TO ORDER | QUO & INFO REQUEST |
VCSEL, Green, Red & Infrared Laser Modules & Optical Transceivers by Lasermate
VCSELs | Communication Lasers | Photodiode Receivers | Fiber Optical Transceivers | Book Store | On Sale Items |
Green, Red, & Infrared Laser Diode Modules | Laser Diodes | Laser Accessories | Laser Products | Electroluminescent Products |
VCSEL (Vertical Cavity Surface Emitting Laser): The Next Generation
Laser
We supply both ion-implant VCSEL and oxidation VCSEL with high performance
and high speed for data
communications as well as sensing applications, which requires gaussian beam and low
beam divergence.
Ion-implant VCSELs designed for CWDM (coarse wavelength division multiplexing)
data communications with custom-matched wavelength spacing from 770nm to 870nm
are available. In addition, single mode VCSEL with 0.1nm spectrum linewidth is also
available for better performance. For more information regarding VCSEL used in
CWDM or other applications, please contact Paul Lin at tel: (909)718-0999 or e-mail:
paul@lasermate.com.
Please click the item of interest below for more information.
Brief in VCSEL
VCSEL Chip or Die
VCSEL 1D Arrays (1xN Array)
VCSEL 2D Arrays (NxN Array)
VCSEL Diodes for General and Communication Applications
Connectorized VCSEL Diodes in FC, SC & ST Receptacle
VCSEL Fiber Optical Transceivers: from 100 Mb/s Fast Ethernet to 1.25 Gb/s Gigabit Ethernet
If you have any comments or request for detail product information, please fill the
Quotation & Information Request Form or mail to: info@lasermate.com.
Please update our new address/phone numbers!
Lasermate Corporation
20264 E. Carrey Road, Walnut, CA 91789, USA Tel: (909) 718-0999 Fax: (909)718-0998
HOME | PRODUCT LIST | HOW TO ORDER | QUO & INFO REQUEST |
VCSEL (Vertical Cavity Surface Emitting Laser)
VCSEL (Vertical Cavity Surface Emitting Laser)
VCSELs | Communication Lasers | Photodiode Receivers | Fiber Optical Transceivers | Book Store | On Sale Items |
Green, Red, & Infrared Laser Diode Modules | Laser Diodes | Laser Accessories | Laser Products | Electroluminescent Products |
Communication Lasers
Please click the item of interest below for more information.
Connectorized 1310 nm FP Laser Diodes in Pigtail or Receptacle with Pinout A or B Configuration
Connectorized 1550 nm FP Laser Diodes in Pigtail or Receptacle with Pinout A or B Configuration
Connectorized 1310 nm DFB Laser Diodes in Pigtail with Pinout A or B Configuration
Connectorized 1550 nm DFB Laser Diodes in Pigtail with Pinout A or B Configuration
1310 nm & 1550 nm 155Mbps STM-1 Tx/Rx Optical Transmitter & Receiver Modules
1310 nm & 1550 nm 622Mbps STM-4 Tx/Rx Optical Transmitter & Receiver Modules
Communication Lasers
If you have any comments or request for detail product information, please fill the
Quotation & Information Request Form or mail to: info@lasermate.com.
Please update our new address/phone numbers!
Lasermate Corporation
20264 E. Carrey Road, Walnut, CA 91789, USA Tel: (909) 718-0999 Fax: (909)718-0998
HOME | PRODUCT LIST | ORDER FORM | QUO & INFO REQUEST |
Communication Lasers
VCSELs | Communication Lasers | Photodiode Receivers | Fiber Optical Transceivers | Book Store | On Sale Items |
Green, Red, & Infrared Laser Diode Modules | Laser Diodes | Laser Accessories | Laser Products | Electroluminescent Products |
VCSEL (Vertical Cavity Surface Emitting Laser): The
Next Generation Laser
We supply both ion-implant VCSEL and oxidation VCSEL with high performance
and high speed for data
communications as well as sensing applications, which requires gaussian beam and low
beam divergence.
Ion-implant VCSELs designed for CWDM (coarse wavelength division multiplexing)
data communications with custom-matched wavelength spacing from 770nm to 870nm
are available. In addition, single mode VCSEL with 0.1nm spectrum linewidth is also
available for better performance. For more information regarding VCSEL used in
CWDM or other applications, please contact Paul Lin at tel: (909)718-0999 or e-mail:
paul@lasermate.com.
Please click the item of interest below for more information.
Brief in VCSEL
VCSEL Chip or Die
VCSEL 1D Arrays (1xN Array)
VCSEL 2D Arrays (NxN Array)
VCSEL Diodes for General and Communication Applications
Connectorized VCSEL Diodes in FC, SC & ST Receptacle
VCSEL Fiber Optical Transceivers: from 100 Mb/s Fast Ethernet to 1.25 Gb/s Gigabit Ethernet
VCSEL (Vertical Cavity Surface Emitting Laser)
If you have any comments or request for detail product information, please fill the
Quotation & Information Request Form or mail to: info@lasermate.com.
Please update our new address/phone numbers!
Lasermate Corporation
20264 E. Carrey Road, Walnut, CA 91789, USA Tel: (909) 718-0999 Fax: (909)718-0998
HOME | PRODUCT LIST | ORDER FORM | QUO & INFO REQUEST |
VCSEL (Vertical Cavity Surface Emitting Laser)
VCSELs | Communication Lasers | Photodiode Receivers | Fiber Optical Transceivers | Book Store | On Sale Items |
Green, Red, & Infrared Laser Diode Modules | Laser Diodes | Laser Accessories | Laser Products | Electroluminescent Products |
Photodiode Receivers
Our photodiodes including GaAs PIN and InGaAs PIN photodiodes and pre amplified photodiodes are
highly sensitive and reliable for data and telecommunication applications. The packages of photodiodes in
connectorized FC/SC/ST receptacle and pigtail are available. The 1 x N (N= 2, ..., 40) GaAs and InGaAs
PIN arrays are also available.
Please click the item of interest below for more information.
GaAs PIN Photodiode for 500 - 850 nm Emitter
InGaAs PIN Photodiode for 850 nm - 1300 nm Emitter
InGaAs/InP PIN Photodiode for 1110 nm - 1650 nm Emitter
1 x N (N = 1, ..., 40) GaAs PIN Photodiode Chip & Arrays
1 x N (N = 1, ..., 40) InGaAs PIN Photodiode Chip & Arrays
If you have any comments or request for detail product information, please fill the
Quotation & Information Request Form or mail to: info@lasermate.com.
Please update our new address/phone numbers!
Lasermate Corporation
20264 E. Carrey Road, Walnut, CA 91789, USA Tel: (909) 718-0999 Fax: (909)718-0998
HOME | PRODUCT LIST | ORDER FORM | QUO & INFO REQUEST |
Photodiode Receivvers
VCSELs | Communication Lasers | Photodiode Receivers | Fiber Optical Transceivers | Book Store | On Sale Items |
Green, Red, & Infrared Laser Diode Modules | Laser Diodes | Laser Accessories | Laser Products | Electroluminescent Products |
Fiber Optical Transceivers
1. Using 850 nm VCSEL short wavelength technology
2. Using 1310 nm Commuication Laser
3. Using 1550 nm Commuication Laser
4. Special Offer: Better Solution for Ethernet 10BaseFL Applications
1. Using 850 nm VCSEL short wavelength technology
Lasermate provides 9-Pin 850nm VCSEL SC/ST duplex 100/155/622/1250 Mbps multimode fiber transceivers
using advanced VCSEL short wavelegth technology for Fast Ethernet, FDDI, ATM, Fiber Channel & Gigabit
Ethernet. They are fully compatible to other existing products such as Hewlett-Packard, AMP & SUMITOMO.
Our 850nm VCSEL 155Mbps SC/ST duplex multimode transceivers are intended to provide low cost SONET
OC3/FDDI/Fast Ethernet link to distances up to 2000 meters in 62.5/125µm multimode fiber optic cables.
Please click below for more information.
850nm VSCEL SC/ST Duplex Multimode Fiber Optical Transceiver Modules:
from 100 Mb/s Fast Ethernet to 1.25 Gb/s Gigabit Ethernet Transceiver
2. Using 1310 nm Commuication Laser
Lasermate supplies 9-Pin 1310 nm laser SC/ST/FC duplex 155/622/1250 Mbps single mode fiber transceiver for
Fast Ethernet, FDDI SMF-PMD 1, ATM, Fiber Channel & Gigabit Ethernet. They are compatible to other
existing products such as Hewlett-Packard, MRV, Siemens, AMP & SUMITOMO.
Please click below for more information.
1310 nm Laser SC/ST/FC Duplex Single Mode Fiber Optical Transceivers:
from 155 Mb/s ATM to 1.25Gb/s Gigabit Ethernet Transceiver
3. Using 1550 nm Commuication Laser
Lasermate offers 9-Pin 1550 nm laser SC (or ST/FC) duplex 155 Mbps single mode fiber transceiver for ATM
155Mb/s Links, SONET/SDH Equipment Interconnect & WDM applications. The transmission distance is at
least 10km in traditional single mode fiber system and at least 30km for the dispersion shift fiber system. This
module can be cooperated with 1310nm single mode transceiver module to form a 2-wavelength optical data
system. This transceiver module is compatible to other existing products such as MRV.
Please click below for more information.
1550 nm Laser 155 Mbps SC Duplex Single Mode Fiber Optical Transceiver
For your information, 9-Pin 1550 nm laser SC/ST/FC duplex 622 Mbps and 1.25 Gbps single mode fiber
transceivers are also available upon requested.
Fiber Optical Transceivers
4. Special Offer: Better Solution for Ethernet 10BaseFL Applications
Better Solution for Ethernet 10BaseFL Applications Using High Qaulity & Low Cost of 850nm VCSEL
Transmitter & GaAs PIN Potodiode Receiver- Compatiable to HP's & Honeywell's.
If you have any comments or request for detail product information, please fill the
Quotation & Information Request Form or mail to: info@lasermate.com.
Please update our new address/phone numbers!
Lasermate Corporation
20264 E. Carrey Road, Walnut, CA 91789, USA Tel: (909) 718-0999 Fax: (909)718-0998
HOME | PRODUCT LIST | ORDER FORM | QUO & INFO REQUEST |
Fiber Optical Transceivers
VCSELs | Communication Lasers | Photodiode Receivers | Fiber Optical Transceivers | Book Store | On Sale Items |
Green, Red, & Infrared Laser Diode Modules | Laser Diodes | Laser Accessories | Laser Products | Electroluminescent Products |
Foods for Brain Book Store
Please click the item of interest below for more information.
Laser
Optics
Electronics
Fiber Optics
Fast Ethernet
ATM
Fiber Channel
Gigabit Ethernet
Safety
If you have any comments or request for detail product information, please fill the
Quotation & Information Request Form or mail to: info@lasermate.com.
Please update our new address/phone numbers!
Lasermate Corporation
20264 E. Carrey Road, Walnut, CA 91789, USA Tel: (909) 718-0999 Fax: (909)718-0998
HOME | PRODUCT LIST | ORDER FORM | QUO & INFO REQUEST |
Foods For Brain Book Store
VCSELs | Communication Lasers | Photodiode Receivers | Fiber Optical Transceivers | Book Store | On Sale Items |
Green, Red, & Infrared Laser Diode Modules | Laser Diodes | Laser Accessories | Laser Products | Electroluminescent Products |
On Sale Items
LIMITED QUANTITY & LIMITED TIME!
Please click the item of interest below for more information.
Fashionable Keychain Laser Pointers ONLY $7.95
European's Favorite Laser Card Pointers ONLY $14.95
Classical Laser Pointers ONLY $19.95
Super Bright Class II <1 mW Green Laser Pointers ONLY $199.00
Super Bright Class IIIa Green Laser Pointers ONLY $275.00
Overstock OEM Industrial Laser Diode Modules with 25-50% Discount ONLY $29.00
9-Pin 850nm VCSEL SC Duplex 100 Mbps Multimode Fiber Optical Transceivers for Fast Ethernet
ONLY $59.00
If you have any comments or request for detail product information, please fill the
Quotation & Information Request Form or mail to: info@lasermate.com.
Please update our new address/phone numbers!
Lasermate Corporation
20264 E. Carrey Road, Walnut, CA 91789, USA Tel: (909) 718-0999 Fax: (909)718-0998
HOME | PRODUCT LIST | ORDER FORM | QUO & INFO REQUEST |
On Sale Items
VCSELs | Communication Lasers | Photodiode Receivers | Fiber Optical Transceivers | Book Store | On Sale Items |
Green, Red, & Infrared Laser Diode Modules | Laser Diodes | Laser Accessories | Laser Products | Electroluminescent Products |
Green, Red & Infrared Laser Diode Modules
Please click the item of interest below for more information.
General Information and Service Red & Infrared Laser Diode Modules
532 nm Diode Pumped Solid State Green Lasers High Power Laser Diode Modules
1064 nm Diode Pumped Solid State Laser Modules Overstock OEM Laser Diode Modules with 25-50%
Discount
If you have any comments or request for detail product information, please fill the
Quotation & Information Request Form or mail to: info@lasermate.com.
Please update our new address/phone numbers!
Lasermate Corporation
20264 E. Carrey Road, Walnut, CA 91789, USA Tel: (909) 718-0999 Fax: (909)718-0998
HOME | PRODUCT LIST | ORDER FORM | QUO & INFO REQUEST |
Green, red, & infrared laser diode modules
VCSELs | Communication Lasers | Photodiode Receivers | Fiber Optical Transceivers | Book Store | On Sale Items |
Green, Red, & Infrared Laser Diode Modules | Laser Diodes | Laser Accessories | Laser Products | Electroluminescent Products |
Laser Diodes
A: Visible Red Laser
Diodes
B: Infrared Laser Diodes
C: Communication Laser
Diodes
Features
Visible red laser diodes, Infrared laser diodes, and Communication laser diodes● High Quality and Low Cost● Wide Range of Wavelength (635 nm - 1550 nm) and Output Power (5 mW - 1000 mW)● Package: TO-5 (dia. 9 mm), TO-18 (dia. 5.6 mm) & TO-46 (dia. 5.4 mm)● Connectorized (pigtailed & receptacle) packages also available●
A: Visible Red Laser Diodes
Pin Configuration
VCSEL (Vertical Cavity Surface Emitting Laser)
Specifications of the 650nm/5mW laser diode for -10 to 40 oC operating temperature (LD-650-5B)
Specifications of the 650nm/5mW laser diode for -10 to 50 oC operating temperature (LD-650-5A)
Specifications of the 650nm/5mW laser diode for -10 to 60 oC operating temperature (LD-650-5E)
Specifications of the 650nm/10mW laser diode -10 to 40 oC operating temperature (LD-650-10I)
Specifications of the 650nm/20mW laser diode -10 to 40 oC operating temperature (LD-650-20G)
Specifications of the 635nm/5mW laser diode -10 to 40 oC operating temperature (LD-635-5A)
Specifications of the 635nm/5mW laser diode -10 to 40 oC operating temperature (LD-635-5L)
Specifications of the 635nm/5mW laser diode -10 to 50 oC operating temperature (LD-635-5I)
Specifications of the 635nm/10mW laser diode -10 to 40 oC operating temperature (LD-635-10I)
Specifications of the 635nm/15mW laser diode -10 to 40 oC operating temperature (LD-635-15I) NEW ITEM!
B: Infrared Laser Diodes
Specifications of the VCSEL 780nm/5mW laser diode
Specifications of the 808nm/5mW laser diode (LD-808-5I)
Specifications of the 808nm/200mW laser diode (LD-808-200G)
Specifications of the 808nm/500mW laser diode (LD-808-500G)
Specifications of the 808nm/1000mW laser diode (LD-808-1000G)
Specifications of the 808nm/1000mW laser diode (LD-808-1W)
Specifications of the 830nm/40mW laser diode (LD-830-40I)
Specifications of the 980nm/50mW laser diode (LD-980-50I) NEW ITEM!
Specifications of the 980nm/100mW laser diode (LD-980-100I) NEW ITEM!
C: Communication Laser Diodes
Specifications of the 850nm/5mW VCSEL diodes
Connectorized 1310nm FP & DFB laser diodes
Connectorized 1550nm FP & DFB laser diodes
VCSEL (Vertical Cavity Surface Emitting Laser)
If you have any comments or request for detail product information, please fill the
Quotation & Information Request Form or mail to: info@lasermate.com.
Please update our new address/phone numbers!
Lasermate Corporation
20264 E. Carrey Road, Walnut, CA 91789, USA Tel: (909) 718-0999 Fax: (909)718-0998
HOME | PRODUCT LIST | ORDER FORM | QUO & INFO REQUEST |
VCSEL (Vertical Cavity Surface Emitting Laser)
VCSELs | Communication Lasers | Photodiode Receivers | Fiber Optical Transceivers | Book Store | On Sale Items |
Green, Red, & Infrared Laser Diode Modules | Laser Diodes | Laser Accessories | Laser Products | Electroluminescent Products |
Laser Accessories
Please click the item of interest below for more information.
Driver Circuit Boards
Optics
OEM Diffractive Optics
Goggles for Laser Safety, Alignment, & Spot Finder
If you have any comments or request for detail product information, please fill
the Quotation & Information Request Form or mail to: info@lasermate.com.
Please update our new address/phone numbers!
Lasermate Corporation
20264 E. Carrey Road, Walnut, CA 91789, USA Tel: (909) 718-0999 Fax: (909)718-0998
HOME | PRODUCT LIST | ORDER FORM | QUO & INFO REQUEST |
Laser Accessories
VCSELs | Communication Lasers | Photodiode Receivers | Fiber Optical Transceivers | Book Store | On Sale Items |
Green, Red, & Infrared Laser Diode Modules | Laser Diodes | Laser Accessories | Laser Products | Electroluminescent Products |
Laser Products
Please click the item of interest below for more information.
(Distributor & Sales Rep. Wanted !)
Educational DIY Laser Pointers Super Bright Green Laser Pointers (2xN Batteries)
$275.00 Only
Classical Laser Pointers Super Bright Green Laser Pointers (2xAAA Batteries)
$199.00 Only!
Fashionable Keychain Laser Pointers Super Bright Green Laser Pointers (1xLithium Battery)
$295.00 Only
European's Favorite Laser Card Pointers Laser Aimer
If you have any comments or request for detail product information, please fill the
Quotation & Information Request Form or mail to: info@lasermate.com.
Please update our new address/phone numbers!
Lasermate Corporation
20264 E. Carrey Road, Walnut, CA 91789, USA Tel: (909) 718-0999 Fax: (909)718-0998
HOME | PRODUCT LIST | ORDER FORM | QUO & INFO REQUEST |
Laser Products
VCSELs | Communication Lasers | Photodiode Receivers | Fiber Optical Transceivers | Book Store | On Sale Items |
Green, Red, & Infrared Laser Diode Modules | Laser Diodes | Laser Accessories | Laser Products | Electroluminescent Products |
Electroluminescent Products
WHAT IS AN ELECTROLUMINESCENCE (or E.L.)?
ELECTROLUMINESCENCE
MEANS TO APPLY
ELECTRICITY FOR
EMITTING LIGHT. THIS
COLD ILLUMINATION
SOURCES
TECHNOLOGY IS HIGHLY
INVOLVED WITH
MOLECULAR CHEMISTRY,
APPLIED MATERIAL
SCIENCE,VACUUM
TECHNIQUES AND
ELECTRONIC CONTROL
DEVICES, i.e.. IT IS A
TECHNICAL-INTENSIVE
INDUSTRY.
E.L. ADVANTAGES:
LIGHT AND THIN●
SURFACE
ILLUMINATION
WITH HIGH
BRIGHNESS
UNIFORMITY
●
FLEXIBLE AND
CAN BE
FABRICATED TO
COMPLEX SHAPE
●
COLD LIGHT
SOURCES WITH NO
ULTRAVIOLET RAYS
EMITTED
●
LOWER
OPERATING
CURRENT
●
VIBRATION AND
MOISTURE
RESISTANT
●
REASONABLE
COST
●
Electroluminescent Products
E.L. APPLICATIONS:
BACKLIGHTING:
PANELS,
INSTRUMENTS,
GAUGES.
●
SIGNS:
COMMERCIALS,
EMERGENCY,
INDICATORS.
●
LIGHTINGS:
SAETY, RESCUE,
P.O.P..
●
TOYS &
PREMIUMS: LIGHT
SOURCES, FUN, PET.
●
TERMININAL
DISPLAYS: E.L.
BOARDS,
TV/COMPUTER
TERMINAL.
●
EL products are a "COLD" light source. They are cool to the touch. No heat is generated by the light
producing mechanisms of an EL product. Our ELs have an expected lifetime of 5,000 hours, unless its
thin plastic layers are damaged.
Please call or e-mail for special designs or large quantities.
If you have any comments or request for detail product information, please fill the
Quotation & Information Request Form or mail to: info@lasermate.com.
Please update our new address/phone numbers!
Lasermate Corporation
20264 E. Carrey Road, Walnut, CA 91789, USA Tel: (909) 718-0999 Fax: (909)718-0998
HOME | PRODUCT LIST | ORDER FORM | QUO & INFO REQUEST |
Electroluminescent Products
VCSELs | Communication Lasers | Photodiode Receivers | Fiber Optical Transceivers | Book Store | On Sale Items |
Green, Red, & Infrared Laser Diode Modules | Laser Diodes | Laser Accessories | Laser Products | Electroluminescent Products |
Quotation and Information Request Form
To receive the fastest response, please call Lasermate
Corporation at (909)718-0999.
If you have any comments or requests for product information, please fill in the following form:
Name:
Company:
Mailing Address:
Tel: Fax:
e-mail:
Note: If your browser does not support forms, e-mail your request to:info@lasermate.com
To receive more efficient response, please check one or more of the following products of interest.
Laser Diode Modules
Please Indicate:
Wavelength: Optical output power:
Operating voltage: Operating temperature:
Beam Shape: Focus:
Dimensions: Applications:
Quotation and Information Request Form
Model No.:
Quantity: Delivery time required
Communication Laser Diode
Connectorized Laser Diode
Fiber Optical Transceiver
Please Indicate:
Transmitter Wavelength: Output power:
Package:
Model No.:
Quantity: Delivery time required
Photo Diode
Connectorized Photo Diode
Please Indicate:
Wavelength: Package:
Model No.:
Quantity: Delivery time required
Laser Diodes
Please Indicate:
Wavelength: Output power:
Model No.:
Quantity: Delivery time required
Laser Pointers
Please Indicate:
Wavelength: Output power:
Model No.:
Quotation and Information Request Form
Quantity: Delivery time required
Laser Aimers
Please Indicate:
Wavelength: Output power:
Applications:
Green Laser Head
Green Laser Module
Green Laser System
Please Indicate:
Output power:
Applications:
Model No.:
Quantity: Delivery time required
Accessories (Circuit board, Optics, etc..)
Please Indicate:
Item:
Model No.:
Quantity: Delivery time required
Comments:
Quotation and Information Request Form
If you have any comments or request for detail product information, please fill the
Quotation & Information Request Form or mail to: info@lasermate.com.
Please update our new address/phone numbers!
Lasermate Corporation
20264 E. Carrey Road, Walnut, CA 91789, USA Tel: (909) 718-0999 Fax: (909)718-0998
HOME | PRODUCT LIST | ORDER FORM | QUO & INFO REQUEST |
Quotation and Information Request Form
Send
Reset
VCSELs | Communication Lasers | Photodiode Receivers | Fiber Optical Transceivers | Book Store | On Sale Items |
Green, Red, & Infrared Laser Diode Modules | Laser Diodes | Laser Accessories | Laser Products | Electroluminescent Products |
Welcome to Lasermate Corporation
- The Friend of Lasers
LASERMATE CORPORATION manufactures green, red, & infrared laser diode modules & products, including
diode pumped solid-state green lasers, laser sights, and green & red laser pointers, as well as fiber optic
components & products, including pigtailed & receptacle 1310 nm & 1550 nm communication laser diodes and
850 nm VCSEL (or Vertical Cavity Surface Emitting Laser) diodes as optical transmitters, connectorized GaAs
PIN & InGaAs PIN photodiodes as optical receivers, and integrated optical transmitters and receivers as optical
transceivers for 100 Mbps Fast Ethernet transceiver, 155 Mbps ATM transceiver, 622 Mbps ATM OC-12, 1.0625
Gbps Fiber Channel & 1.25 Gbps Gigabit Ethernet transceiver. We also supply VCSEL chip, 1D & 2D arrays,
GaAs PIN chip & array, InGaAs PIN chip & array, laser diodes, PIN photodiodes, diffractive optics, diode driver
circuit boards, and laser safety goggles.
Please click the item of interest below for more detail information.
VCSELs Green, Red, & Infrared Laser Diode Modules Laser Diodes Laser Accessories Electroluminescent Products
On Sale Items Green & Red Laser Pointers Communication Lasers Photodiode Receivers Fiber Optical Transceivers
SPECIAL OFFER! Green Laser Pointer only $199.00 each!
New Products:
Focusable 532 nm DPSS green laser modules
Connectorized 1310nm & 1550nm DFB laser diode modules
1310 nm & 1550nm 155Mbps STM-1 transmitter & receiver modules
1310 nm & 1550nm 155Mbps STM-4 transmitter & receiver modules
For order methods, terms & conditions, and order form, please click HOW TO ORDER.
VCSEL, Green, Red & Infrared Laser Modules & Optical Transceivers by Lasermate
Please update our new
address/phone
numbers!
Address:
20264 E. Carrey Road,
Walnut, CA 91789, USA
Tel: (909) 718-0999
Fax: (909)718-0998
E-mail: info@lasermate.com
Web:http://www.lasermate.com
Foods for
Brain
Book Store
Laser●
Optics●
Electronics●
Fast Ethernet●
ATM●
Fiber Channel●
Gigabit
Ethernet
●
Safety●
To receive the fastest response, please call Lasermate
Corporation at (909) 718-0999.
You are visitor number since June 27,
1996
Local time: Walnut, California
Comments and Questions mail to: info@lasermate.com
Information contained herein is considered typical data. Lasermate Corporation
reserves the right to change or modify specifications of products at any time without
notice.
Copyright © 1996-2000 by Lasermate Corporation. All rights reserved.
HOME | PRODUCT LIST | HOW TO ORDER | QUO & INFO REQUEST |
VCSEL, Green, Red & Infrared Laser Modules & Optical Transceivers by Lasermate
VCSELs | Communication Lasers | Photodiode Receivers | Fiber Optical Transceivers | Book Store | On Sale Items |
Green, Red, & Infrared Laser Diode Modules | Laser Diodes | Laser Accessories| Laser Products | Electroluminescent Products |
Goggles for Lasers
Please click the item below for
price and spec information.
LaserShields: polycarbonate laser
safety goggles
Laser Alignment
Laser Enhancer: red laser spot
finder goggle
Lightweight Protection● High Optical Densities● Excellent Visibility● Wide Field of View●
Please click here for the pictures of various goggle styles
If you have any comments or request for detail product information, please fill the
Quotation & Information Request Form or mail to: info@lasermate.com.
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Laser Safety Goggle - Laser Shield, Laser alignment, laser enhancer
VCSELs | Communication Lasers | Photodiode Receivers | Fiber Optical Transceivers | Book Store | On Sale Items |
Green, Red, & Infrared Laser Diode Modules | Laser Diodes | Laser Accessories| Laser Products | Electroluminescent Products |
LaserShield
Polycarbonate Laser Safety Goggles
Please click here for the pictures of various goggle with style code.
Laser Safety Goggle Wavelength Optical
Density Visible Light
Transmission Price Laser Safety Goggle Wavelength Optical
Density Visible Light
Transmission Price
Alexandrite Diode
1-CE Approved
Model No.:
ALX300,700,900
ALX#30,31,32,39,60
ALX700--CE model
720-840
755
809
6+
7+
7+
24.5 %
$155.00
Carbon
Dioxide/Excimer-CE
Approved
Model No.:
ECO900--CE model
190-398
10,600 5+
5+ 92.9 %
$90.00
Argon-KTP-CE
Approved
Model No.:
ARG300,700,900
ARG#30,31,32,39,60
ARG700--CE model
190-449
450-532 5+
6+ 38.4 %
$90.00
Excimer
Model No.:
EXC300,700,900
EXC#30,31,32,39,60
190-398 5+ 92.9 %
$50.00
Alexandrite Diode 3
Model No.:
AXD300,700,900
AXD#30,31,32,39,60
720-830
755
810
5+
6+
6+
37.9 %
$155.00
Krypton (Red)/HeNe
Model No.:
KRR300,700,900
KRR#30,31,32,39,60
190-380
606-694 5+
5+ 17.6 %
$120.00
Alexandrite Diode
2-CE Approved
Model No.:
AXX300,700,900
AXX#30,31,32,39,60
AXX700--CE model
720-830
755
809
6+
6+
7+
32.6 %
$155.00
Krypton
(Yellow)/Copper Vapor
Model No.:
KRY300,700,900
KRY#30,31,32,39,60
190-575 5+ 9.2 %
$120.00
CO2
Model No.:
CO2300,700,900
CO2#30,31,32,39,60
190-360
10,600 5+
5+ 92.9 %
$35.00
Ruby
Model No.:
RB2300,700,900
RB2#30,31,32,39,60
694 5+ 69.8 %
$140.00
Laser Safety Goggle - Laser Shield
Nd:Yag-Harmonics-CE
Approved
Model No.:
DBY300,700,900
DBY#30,31,32,39,60
DBY900--CE model
190-534
1064 5+
5+ 16.3 %
$220.00
Ruby/Diode-CE
Approved
Model No.:
RD2300,700,900
RD2#30,31,32,39,60
RD2700--CE model
675-850 5+ 16.9 %
$155.00
810 Diode
Model No.:
DI2300,700,900
DI2#30,31,32,39,60
190-390
800-820 5+
5+ 61 %
$175.00
Nd:
YAG-Harmonics-Diode
Model No.:
YAD300,700,900
YAD#30,31,32,39,60
190-534
720-1064
738-845
1064
5+
5+
6+
6+
10.6 %
$255.00
Diode-KTP
Model No.:
DI3300,700,900
DI3#30,31,32,39,60
190-449
450-532
800-820
5+
6+
5+
32 %
$210.00
Nd:YAG-CE Approved
Model No.:
YAG700--CE model
1064 7+ 58.7 %
$155.00
Diode
Model No.:
DIO300,700,900
DIO#30,31,32,39,60
190-380
760-890 5+
5+ NA %
$120.00
Nd:YAG Wideband
Model No.:
YG2300,700,900
YG2#30,31,32,39,60
190-380
770-1100
1064
5+
5+
6+
20.2 %
$155.00
Dye
Model No.:
DYE300,700,900
DYE#30,31,32,39,60
190-380
565-600
585
5+
5+
6+
6.7 %
$140.00
Nd:YAG (YG3)-CE
Approved
Model No.:
YG3300,700,900
YG3#30,31,32,39,60
YG3900--CE model
190-380
1064
980-1070
5+
7+
5+
58.7 %
$155.00
IR Diode
Model No.:
IRD300,700,900
IRD#30,31,32,39,60
190-380
760-1725 5+
2+ 46.5 % $160.00
Note:
Please click here for the pictures of goggle style
LaserShields meet ANSI Z136.1 laser protection
standards and Z87.1 impact standards.
●
STYLE CODE
300 – Wrap-Around 700 – Medium Fitover
900 – Large Fitover #60 – Softie Goggle
#32 – Adjustable Spectacle #30 – Framed Wrap-Around
#31 – Medium Framed Fitover #39 – Large Framed Fitover
If you have any comments or request for detail product information, please fill the
Quotation & Information Request Form or mail to: info@lasermate.com.
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Laser Safety Goggle - Laser Shield
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Style Codes & Pictures of Laser Goggles
Style code: 300
Non-Fitover
Wrap-Around w/Side Shields
Style code: 700
Medium Fit-Over w/Side Shields Style code: 900
Large Fit-Over w/Side Shields
Style code: #30
Non-Fitover
Framed Wrap-Around
Style code: #31
Medium Framed Fitover Style code: #39
Large Framed Fitover
Style code: #32
Adjustable Spectacle Style code: 60
Softie Goggle
Please click the item below for price and spec information.
LaserShields: polycarbonate laser safety goggles
Laser Alignment
Laser Enhancer: red laser spot finder goggle
Goggle Style for Laser Shield, Laser alignment, laser enhancer
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Green, Red, & Infrared Laser Diode Modules | Laser Diodes | Laser Accessories| Laser Products | Electroluminescent Products |
Laser Enhancer: red laser spot finder goggle
Model No.: Enhanced Wavelength Optical
Density Visible Light
Transmission Price
PLV#30, 31, 39 620 nm - 700 nm NA 2.7% $30.00
Please click here for the pictures of various goggles with style code
Please click the item below for
price and spec information.
LaserShields: polycarbonate laser
safety goggles
Laser Alignment
Lightweight Protection● High Optical Densities● Excellent Visibility● Wide Field of View●
If you have any comments or request for detail product information, please fill the
Quotation & Information Request Form or mail to: info@lasermate.com.
HOME | PRODUCT LIST | ORDER FORM | QUO & INFO REQUEST |
Laser Safety Goggle - Laser Shield, Laser alignment, laser enhancer
Laser Safety Goggle - Laser Shield, Laser alignment, laser enhancer
VCSELs | Communication Lasers | Photodiode Receivers | Fiber Optical Transceivers | Book Store | On Sale Items |
Green, Red, & Infrared Laser Diode Modules | Laser Diodes | Laser Accessories | Laser Products | Electroluminescent Products |
PRODUCT LIST
OEM GREEN, RED & INFRARED LASER DIODE MODULES & PRODUCTS:
Red & infrared laser diode modules●
Diode pumped solid-state green lasers●
Green & Red laser pointers●
Laser sights●
LASER DIODE & ACCESSORIES:
Red & infrared laser diodes●
Collimating optics●
Diffractive optics●
Diode driver circuit boards●
Laser safety goggles.●
DATA COMMUNICATION & TELECOMMUNICATION COMPONENTS:
850 nm VCSEL (or Vertical Cavity Surface Emitting Laser) chips, 1D & 2D arrays & diodes ●
1310 nm & 1550 nm communication laser diodes●
Receptacle 850nmVCSEL diodes ●
Connectorized (or pigtailed & receptacle) 1310 nm & 1550 nm communication laser diodes●
PHOTODIODE RECEIVERS:
GaAs PIN photodiode & arrays●
GaAs PIN photodiode plus AGC Preamplifier●
Connectorized GaAs PIN photodiode plus AGC Preamplifier●
InGaAs PIN photodiode & arrays●
InGaAs PIN photodiode plus AGC Preamplifier●
Connectorized InGaAs PIN photodiode plus AGC Preamplifier●
FIBER OPTICAL TRANSCEIVERS:
100 Mbps Fast Ethernet transceiver●
155 Mbps ATM transceiver●
622 Mbps ATM OC-12●
1.0625 Gbps Fiber Channel ●
1.25 Gbps Gigabit Ethernet transceiver●
PRODUCT LIST
Purchasing Order & Credit Card Authorization Form
If you wish to charge the amount of your advance orders to your credit card account, please
complete the information requested below and fax this form to (909)718-0998 Lasermate
Corporation.
Purchasing Order Date (mm-dd-yy):_____ - _____ - ______
QTY Model No. Brief Description Unit price Amount
____________________________________________________________________________
____________________________________________________________________________
____________________________________________________________________________
____________________________________________________________________________
____________________________________________________________________________
____________________________________________________________________________
SALES ____________
(1 week $5 (<$100 order), $7 (>$100) ; 2nd Day $10; Next Day $18 in USA) FREIGHT ____________
(8.25% sales tax for California residents) SALES TAX ____________
TOTAL ____________
Credit Card Authorization Form
Charge to: ____ MasterCard ____ Visa ____ American Express Amount: USD____________
Cardholder's name:______________________________________________________
Card No. : |___|___|___|___|___|___|___|___|___|___|___|___|___|___|___|___|
Expiration Date:|___|___|___|___|
Cardholder's Signature:___________________________________________________
Phone Number: ________________________ Fax number: ______________________
Cardholder Address:______________________________________________
_________________________________________________
_________________________________________________
Shipping Address:_______________________________________________
_______________________________________________
_______________________________________________
ORDER FORM
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Green, Red, & Infrared Laser Diode Modules | Laser Diodes | Laser Accessories| Laser Products | Electroluminescent Products |
Green Laser Pointers
ONLY $199.00 for GLS-L & $219.00 for GLS-H!
ONLY $275.00 for GLP-03-B (or -S) & $325.00 for GLP-05-B
(or -S)!
PLEASE SEE CLICK ABOVE ITEMS FOR MORE INFORMATION.
GLS- Series Green laser pointers
FEATURES:
LOWER OPERATING CURRENT TYPICAL 245 mA!●
TWO AAA BATTERIES OPERATED.●
CLASSICAL DESIGN WITH IMPROVED SWITCH.●
LOW COST.●
Green Laser Pointers
SPECIFICATIONS
MODEL NO. GLS-L GLS-H
WAVELENGTH 532 NM 532 NM
PULSED PEAK POWER 0.5- 1.14 MW @ 25 oC 1.14- 4.99 MW @ 25 oC
LASER CLASS IIIa IIIa
RANGE* <700 YARD < 2,100 YARD
HOUSING BRASS BRASS
BODY COLOR SILVER SILVER
OPERATION SWITCH PUSH BUTTON (METAL) PUSH BUTTON (METAL)
BATTERY 2 X AAA 1.5V (INCLUDED) 2 X AAA 1.5V (INCLUDED)
DIMENSIONS DIA. 1.3 X L. 16.5 CM DIA. 1.3 X L. 16.5 CM
UNIT PRICE $199.00 $219.00
WARRANTY 90 DAYS 90 DAYS
*The range of laser is variable with factors such as background lightness and air quality.
For your information, the 532 nm laser is about 35 time brighter the 670 nm laser.
GLP- Series Green Laser Pointers
FEATURES:
LOWER OPERATING CURRENT TYPICAL 230 mA!●
COMPACT PACKAGE FITTING IN YOUR POCKET.●
BETTER SWITCH DESIGN.●
ELEGENT DESIGN BETTER PERFORMANCE.●
Green Laser Pointers
SPECIFICATIONS
MODEL NO. GLP-03-B (or -S) GLP-05-B (or-S)
WAVELENGTH 532 NM 532 NM
PULSED PEAK POWER 1.5 - 3 MW @ 25 oC 3 - 5 MW @ 25 oC
LASER CLASS IIIA III A
RANGE* < 2,100 YARD < 3,500 YARD
HOUSING BRASS BRASS
BODY COLOR BLACK (OR SILVER) BLACK (OR SILVER)
OPERATION SWITCH PUSH BUTTON PUSH BUTTON
BATTERY 2 X "N" 1.5V (INCLUDED) 2 X "N" 1.5V (INCLUDED)
DIMENSIONS DIA. 1.3 X L. 13.6 CM DIA. 1.3 X L. 13.6 CM
UNIT PRICE $275.00 $325.00
WARRANTY 90 DAYS 90 DAYS
*The range of laser is variable with factors such as background lightness and air quality.
For your information, the 532 nm laser is about 35 time brighter the 670 nm laser.
To order please click here to use the order form.
If you have any comments or request for detail product information, please fill the
Quotation & Information Request Form or mail to: info@lasermate.com.
HOME | PRODUCT LIST | ORDER FORM | QUO & INFO REQUEST |
Green Laser Pointers
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Green, Red, & Infrared Laser Diode Modules | Laser Diodes | Laser Accessories| Laser Products | Electroluminescent Products |
Focusable GMA- Series 532 nm DPSS Green Laser Modules
GMA- Series 532 nm DPSS Green Laser Modules with CW Mode
GMA- Series 532nm DPSS Green Laser Modules with TTL Modulation
GMA- Series 532nm DPSS Green Laser Modules with Analog Modulation
Specifications of GMA- Series 532 nm DPSS Green Laser Modules
Model No. GMA-532-XA5
Wavelength 532 nm
Mode TEMoo
Output power (mW) @ 5VDC,
25 oC0.5-0.99
(X=1)
1.5-3
(X=3)
3-5
(X=5)
8-10
(X=10)
11-15
(X=15)
16-20
(X=20)
21-25
(X=25)
Operating Current (A) <0.45 <0.65 <0.75
Operating Voltage 5 +/- 0.5VDC
Focus Adjustable focus from 5 cm to infinity
Circuit Design ACC
Operation Mode CW
M2< 2
Focusable 532 nm Diode Pumped Solid State Green Laser Modules
Linewidth < 0.1 nm
Polarization Linear
Beam Divergence <1.4 mrad
Beam Diameter (1/e2)< 1 mm
Stability* ≤ ±20% @ 25 ± 3 oC
Connector Black (-) & red (+) wires
Storage Temperature 10 - 50 oC
Optimum Operating
Temperature 22-28 oC
MTTF** 5,000 hrs
Dimensions (LxWxH) Dia. 17 x 30 mm + 20 x 20 x 20 mm (green laser head)
32 x 15 mm (driver circuit board)
20 x 18 x 15 mm (heat sink)
43 x 43 mm (soft-start PCB)
* Additional heat sink or cooling fan may be needed to stabilize the output power of laser module.
** MTTF (mean time to failure) is based on the MTTF rating of high power 808nm laser diode used from the laser diode
manufacturer.
The GMA-series 532 nm Diode Pumped Solid State Green Laser Modules, which use laser diode pumped Nd:YVO4 crystal coupled
with KTP as a frequency doubbler, are designated solely as OEM components for incorporation into the customer's end products.
Therefore, they do not comply with the appropriate requirements of FDA 21CFR, section 1040.10 and 1040.11 for complete laser
products.
TTL Modulation of GMA- Series 532nm DPSS Green Laser Modules
Model No. GMA-532-XA5-T
Wavelength 532 nm
Mode TEMoo
Output power (mW) @ 5VDC, 25
oC0.5-0.99
(X=1)
1.5-3
(X=3)
3-5
(X=5)
8-10
(X=10)
11-15
(X=15)
16-20
(X=20)
21-25
(X=25)
Operating Current (A) <0.45 <0.65 <0.75
Operating Voltage 5 VDC
Control Voltage Max. 5 VDC
Focus Adjustable focus from 5 cm to infinity
Circuit Design ACC with modulator and soft-start protection
Operation Mode TTL
Bandwidth From DC to 10KHz
M2< 2
Linewidth < 0.1 nm
Polarization Linear
Beam Divergence <1.4 mrad
Beam Diameter (1/e2)< 1 mm
Stability* ≤ ±20 % @ 25 ± 3 oC
Connector Black (-), red (+) & yellow (control) wires
Storage Temperature 10 - 50 oC
Optimum Operating Temperature 22-28 oC
MTTF** 5,000 hrs
Dimensions (LxWxH) Dia. 17 x 30 mm + 20 x 20 x 20 mm (green laser head)
50 x 50 mm (driver circuit board)
20 x 18 x 15 mm (heat sink)
* Additional heat sink or cooling fan may be needed to stabilize the output power of laser module.
Focusable 532 nm Diode Pumped Solid State Green Laser Modules
** MTTF (mean time to failure) is based on the MTTF rating of high power 808nm laser diode used from the laser diode
manufacturer.
The GMA-series 532 nm Diode Pumped Solid State Green Laser Modules, which use laser diode pumped Nd:YVO4 crystal coupled
with KTP as a frequency doubbler, are designated solely as OEM components for incorporation into the customer's end products.
Therefore, they do not comply with the appropriate requirements of FDA 21CFR, section 1040.10 and 1040.11 for complete laser
products.
Analog Modulation of GMA- Series 532nm DPSS Green Laser Modules
Model No. GMA-532-XA5-M
Wavelength 532 nm
Mode TEMoo
Output power (mW) @ 5VDC, 25
oC0.5-0.99
(X=1)
1.5-3
(X=3)
3-5
(X=5)
8-10
(X=10)
11-15
(X=15)
16-20
(X=20)
21-25
(X=25)
Operating Current (A) <0.45 <0.65 <0.75
Operating Voltage 5 VDC
Control Voltage Max. 5 VDC
Focus Adjustable focus from 5 cm to infinity
Circuit Design ACC with modulator and soft-start protection
Operation Mode Analog
Bandwidth From DC to 10KHz
M2< 2
Linewidth < 0.1 nm
Polarization Linear
Beam Divergence <1.4 mrad
Beam Diameter (1/e2)< 1 mm
Stability* ≤ ±20% @ 25 ± 3 oC
Connector Black (-), red (+) & yellow (control) wires
Storage Temperature 10 - 50 oC
Optimum Operating Temperature 22-28 oC
MTTF** 5,000 hrs
Dimensions (LxWxH) Dia. 17 x 30 mm + 20 x 20 x 20 mm (green laser head)
50 x 50 mm (driver circuit board)
20 x 18 x 15 mm (heat sink)
* Additional heat sink or cooling fan may be needed to stabilize the output power of laser module.
** MTTF (mean time to failure) is based on the MTTF rating of high power 808nm laser diode used from the laser diode
manufacturer.
The GMA-series 532 nm Diode Pumped Solid State Green Laser Modules, which use laser diode pumped Nd:YVO4 crystal coupled
with KTP as a frequency doubbler, are designated solely as OEM components for incorporation into the customer's end products.
Therefore, they do not comply with the appropriate requirements of FDA 21CFR, section 1040.10 and 1040.11 for complete laser
products.
Note: The specification is subject to change without notice.
If you have any comments or request for detail product information, please fill the
Quotation & Information Request Form or mail to: info@lasermate.com.
HOME | PRODUCT LIST | ORDER FORM | QUO & INFO REQUEST |
Focusable 532 nm Diode Pumped Solid State Green Laser Modules
Focusable 532 nm Diode Pumped Solid State Green Laser Modules
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1310 nm & 1550 nm STM-1 Transmitter & Receiver Modules
Read Model No. TW-X-Y-Z-512 Read Model No. RW-X-Y-Z-512
TW = Transmitter 1310 nm laser (TW=T3)
1550nm laser (TW=T5) RW = Receiver Standard (RW= RA)
With CLK pin B (RW=RB)
With CLK pin C (RW=RC)
X = Package Pigtail (X=P),
Receptacle (X=R) X = Package Pigtail (X=P),
Receptacle (X=R)
Y = Connector FC: (Y = FC), SC: (Y=SC)
ST: (Y=ST) Y = Connector FC:(Y = FC), SC: (Y=SC)
ST: (Y=ST)
Z = Output Power -3 dBm - 0 dBm (Z=1),
-12dBm - 8 dBm (Z=2) Z = Sensitivity <-35 dBm (Z=2)
512 = supply voltage, data rate
& pin number 5V, 155Mbps STM-1, 20 pins dual
in line 512 = supply voltage, data rate
& pin number 5V, 155Mbps STM-1, 20 pins dual in
line
FEATURES
Data Rate: 155Mbps, NRZ●
Power Supply Voltage: Single+5V●
Electrical Interface: Differential PECL●
Pin-Configuration: 20 pins Dual in Line●
Connector Interface: FC/PC●
Receiver: Clock Recovery Circuit Available●
Fiber size: 9/125µm●
APPLICATIONS
ATM/SONET OC-3/SDH STM-1●
Active Star Network●
Point to Point Links●
ELECTRICAL INTERFACE
TRANSMITTER
Tc=0 to 70oC, Vcc-VEE = 4.75 to 5.25V unless otherwise specified
Parameter Symbol Min. Typ. Max. Units Condition
Supply Voltage Vcc-VEE 4.75 5.0 5.25 V Note 1
Supply Current Icc - 100 - mA Note 2
Input Voltage, TD, TD HI Vih Vcc-1.17 Vcc-0.73 V Note 3
LO Vil Vcc-1.95 Vcc-1.45 V Note 3
Laser Bias Monitor Diff. Voltage 0.2 V Note 3
Rear Face Monitor Diff. Voltage 0.08 V Note 3
Transmitter Disable HI Vcc-1 Vcc V Note 4
155Mbps STM-1 Tx/Rx Optical Module
LO VEE VEE+0.8 V
Note:
1. If Vcc-GND, then Vcc=-4.75 to -5.25V. If VEE=GND, then Vcc=4.75 to 5.25V
2. Input bias current is not included in Supply Current. 50% duty cycle data pattern at 155.52Mb/s
3. Vcc-VEE=5V, Tc=25oC
4. The transmitter is normally disable and only requires an external voltage to enable.
RECEIVER
Tc= 0 to 70oC, Vcc-VEE = 4.75 to 5.25V unless otherwise specified
Parameter Symbol Min. Typ. Max. Unit
Supply Voltage Vcc 4.75 5.0 5.25 V
Supply Current Icc 100 mA
Output Voltage HI Voh Vcc-1.03 Vcc-0.88 V
DATA & /DATA LO Vol Vcc-1.81 Vcc-1.62 V
HI Voh Vcc-1.03 Vcc-0.88 V
FLAG & /FLAG LO Vol Vcc-1.81 Vcc-1.62 V
OPTO-ELECTRICAL INTERFACE
TRANSMITTER
Tc=0 to 70oC, Vcc-VEE = 4.75 to 5.25V unless otherwise specified
Parameter Symbol Min. Typ. Max. Units Condition
Average Output Power Po -12
-3
-8
0
dBm Note 1
Extinction Ratio Er 10 dB
Eye Diagram CCITT G.957
Center Wavelength λ1280
1520
1310
1550
1330
1580
nm
Spectral Width(RMS) ∆λ 1.5 4.0 nm
Note: 1. Measured at the bit rate of 155.52Mbps, (223-1) PRBS NRZ, 25oC
RECEIVER
Tc=0 to 70oC, Vcc-VEE = 4.75 to 5.25V unless otherwise specified
Parameter Symbol Min. Typ. Max. Units Condition
Overload Pmax -3 dBm Note 1
Minimum Sensitivity Pmin -35 dBm Note 1
FLAG Dessert Power Pd -53 -33 dBm
Assert Power Pa -52 -32 dBm
Note: 1. Measured at the bit rate of 155.52Mbps, (223-1) PRBS NRZ, 25oC
PIN ASSIGNMENT (Transmitter / Receiver)
155Mbps STM-1 Tx/Rx Optical Module
Pigtail Receptacle
TRANSMITTER RECEIVER (Standard, Pin Assignment A)
Pin # Function Pin # Function Pin # Function Pin # Function
1 NC* 20 NC* 1 NC* 20 NC*
2 LBM(+) 19 RFM(+) 2 NC* 19 NC*
3 NC* 18 Vcc 3 NC* 18 NC*
4 LBM(-) 17 RFM(-) 4 NC* 17 NC*
5 VEE 16 DATA 5 NC* 16 NC*
6 Vcc 15 /DATA 6 GND 15 GND
7 Transmitter Disable 14 Vee 7 DATA 14 /FLAG
8 Vcc 13 NC* 8 GND 13 GND
9 Vcc 12 Vcc 9 /DATA 12 FLAG
10 NC* 11 NC* 10 NC* 11 Vcc (+5V)
*NC pin is not connected to the internal circuit
LBM: Laser Bias Monitor
RFM: Rear Face Monitor
RECEIVER (with CLK, Pin Assignment B) RECEIVER (with CLK, Pin Assignment C)
Pin # Function Pin # Function Pin # Function Pin # Function
1 GND 20 NC* 1 NC* 20 NC*
2 GND 19 NC* 2 NC* 19 NC*
3 GND 18 NC* 3 /CLK 18 NC*
4 CLK 17 NC* 4 GND 17 NC*
5 /CLK 16 GND 5 /CLK 16 NC*
6 GND 15 GND 6 GND 15 GND
7 DATA 14 FLAG 7 DATA 14 /FLAG
8 GND 13 GND 8 GND 13 GND
9 /DATA 12 /FLAG 9 /DATA 12 FLAG
10 GND 11 Vcc(+5V) 10 NC* 11 Vcc(+5V)
*NC pin is not connected to the internal circuit
Note: CLK represents clock recovery circuit. *NC pin is not connected to the internal circuit
Note: CLK represents clock recovery circuit.
Pigtail Package:
Unit: mm
155Mbps STM-1 Tx/Rx Optical Module
Receptacle Package:
155Mbps STM-1 Tx/Rx Optical Module
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1310 nm & 1550 nm STM-4 Transmitter & Receiver Modules
Read Model No. TW-X-Y-Z-542 Read Model No. RW-X-Y-Z-542
TW = Transmitter 1310 nm laser (TW=T3)
1550nm laser (TW=T5) RW = Receiver Standard (RW= RA)
With CLK pin B (RW=RB)
X = Package Pigtail (X=P),
Receptacle (X=R) X = Package Pigtail (X=P),
Receptacle (X=R)
Y = Connector FC:(Y = FC), SC: (Y=SC)
ST: (Y=ST) Y = Connector FC:(Y = FC), SC: (Y=SC)
ST: (Y=ST)
Z = Output Power -3 dBm - 0 dBm (Z=1),
-12dBm - 8 dBm (Z=2) Z = Sensitivity <-28 dBm (Z=1),
542 = supply voltage, data rate
& pin number 5V, 622Mbps STM-4, 20 pins dual
in line 542 = supply voltage, data rate
& pin number 5V, 622Mbps STM-4, 20 pins dual in
line
FEATURES
Data Rate: 622Mbps, NRZ●
Power Supply Voltage: Single+5V●
Electrical Interface: Differential PECL●
Pin-Configuration: 20pins Dual in Line●
Connector Interface: FC/PC●
Fiber size: 9/125µm●
APPLICATIONS
ATM/SONET OC-12/SDH STM-4●
Active Star Network●
Point to Point Links●
ELECTRICAL INTERFACE
TRANSMITTER
Tc=0 to 70oC, Vcc-VEE = 4.75 to 5.25V unless otherwise specified
Parameter Symbol Min. Typ. Max. Units Condition
Supply Voltage Vcc-VEE 4.75 5.0 5.25 V Note 1
Supply Current Icc - 200 300 mA Note 2
Input Voltage, TD, TD HI Vih Vcc-1.17 Vcc-0.73 V Note 3
LO Vil Vcc-1.95 Vcc-1.45 V Note 3
Laser Bias Monitor Diff. Voltage 0.2 V Note 3
Rear Face Monitor Diff. Voltage 0.08 V Note 3
Transmitter Disable HI Vcc-1 Vcc V Note 4
LO VEE VEE+0.8 V
622Mbps STM-4 Tx/Rx Optical Module
Note:
1. If Vcc-GND, then Vcc=-4.75 to -5.25V. If VEE=GND, then Vcc=4.75 to 5.25V
2. Input bias current is not included in Supply Current. 50% duty cycle data pattern at 622.08Mb/s
3. Vcc-VEE=5V, Tc=25oC
4. The transmitter is normally disable and only requires an external voltage to enable.
RECEIVER
Tc=0 to 70oC, Vcc-VEE = 4.75 to 5.25V unless otherwise specified
Parameter Symbol Min. Typ. Max. Unit
Supply Voltage Vcc 4.75 5.0 5.25 V
Supply Current Icc 150 mA
Output Voltage HI Voh Vcc-1.03 Vcc-0.88 V
DATA & /DATA LO Vol Vcc-1.81 Vcc-1.62 V
HI Voh Vcc-1.03 Vcc V
FLAG & /FLAG LO Vol 0 0.5 V
OPTO-ELECTRICAL INTERFACE
TRANSMITTER
Tc=0 to 70oC, Vcc-VEE = 4.75 to 5.25V unless otherwise specified
Parameter Symbol Min. Typ. Max. Units Condition
Average Output Power Po -12
-3 -8
0dBm Note 1
Extinction Ratio Er 8.2 dB
Eye Diagram CCITT G.957
Center Wavelength λ1280
1520
1310
1550
1330
1580
nm
Spectral Width(RMS) ∆λ 1.5 4.0 nm
Note: 1. Measured at the bit rate of 622.08Mbps, (223-1) PRBS NRZ, 25oC
RECEIVER
Tc=0 to 70oC, Vcc-VEE = 4.75 to 5.25V unless otherwise specified
Parameter Symbol Min. Typ. Max. Units Condition
Overload Pmax -3 dBm Note 1
Minimum Sensitivity Pmin -28 dBm Note 1
FLAG Dessert Power Pd -42 -32 dBm
Assert Power Pa -52 -28.5 dBm
Note: 1. Measured at the bit rate of 622.08Mbps, (223-1) PRBS NRZ, 25oC
PIN ASSIGNMENT (Transmitter / Receiver)
622Mbps STM-4 Tx/Rx Optical Module
Pigtail Package
Receptacle Package
TRANSMITTER RECEIVER (Standard, Pin assignment A)
Pin # Function Pin # Function Pin # Function Pin # Function
1 NC* 20 NC* 1 NC* 20 NC*
2 LBM(+) 19 RFM(+) 2 NC* 19 NC*
3 NC* 18 Vcc 3 NC* 18 NC*
4 LBM(-) 17 RFM(-) 4 NC* 17 NC*
5 VEE 16 DATA 5 NC* 16 NC*
6 Vcc 15 /DATA 6 Ground 15 Ground
7 Transmitter Disable 14 Vee 7 DATA 14 /FLAG
8 Vcc 13 NC* 8 Ground 13 Ground
9 Vcc 12 Vcc 9 /DATA 12 FLAG
10 NC* 11 NC* 10 NC* 11 Vcc (+5V)
*NC pin is not connected to the internal circuit
LBM: Laser Bias Monitor
RFM: Rear Face Monitor
RECEIVER (WITH CLK, Pin assignment B)
Pin # Function Pin # Function
1 GND 20 NC*
2 GND 19 NC*
3 GND 18 NC*
4 CLOCK 17 NC*
5 /CLOCK 16 GND
6 GND 15 GND
7 DATA 14 FLAG
8 GND 13 GND
9 /DATA 12 /FLAG
10 GND 11 Vcc(+5V)
*NC pin is not connected to the internal circuit
Note: CLK represents clock recovery circuit.
622Mbps STM-4 Tx/Rx Optical Module
Dimensions: Unit: mm
Pigtail Package:
Receptacle Package:
622Mbps STM-4 Tx/Rx Optical Module
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ELECTRONICS Section A: General Interests
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The Art of Electronics; Paul Horowitz, Winfield Hill; Hardcover; $64.95; Descriptive information
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Basic Electronics; Paul B. Zbar; Paperback; $27.17
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Basic Electricity and Electronics; Charles A. Schuler, Richard J. Fowler; Hardcover; $66.95
Analogue and Digital Electronics for Engineers: An Introduction; H. Ahmed; Paperback; $29.66
Basic Electronics; Paperback; $11.65
Basic Electronics : A Text-Lab Manual; Paul B. Zbar, Albert P. Malvino; Paperback; $37.95
Basic Electronics Course (Tab Hobby Electronics Series); Norman H. Crowhurst, Norman H. Croehurst;
Paperback; $17.96
Basic Electronics Theory/With Projects & Experiments; Delton T. Horn; Paperback; $24.26; Descriptive
information available.
Bebop to the Boolean Boogie : An Unconventional Guide to Electronics Fundamentals, Components,
and Processes; Clive Maxfield; Paperback; $31.50
Beginner's Guide to Reading Schematics; Robert J. Traister, Anna L. Lisk; Paperback; $13.45
Electricity & Electronics; Thomas E. Newman; Hardcover; $59.95
Electricity and Basic Electronics; Stephen R. Matt; Hardcover; $34.00
Electricity and Electronics; Howard H. Gerrish, William E. Dugger; Hardcover; $35.96; Descriptive
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Electricity and Electronics Fundamentals Vol 1; Frank D. Petruzella; Paperback; $31.95
Electronic Principles; Albert Paul, Ph.D. Malvino; Hardcover; $72.95
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Applied Electronic Devices and Analog Ics; J. Michael McMenamin; Hardcover; $75.95
Analog and Digital Electronics : A First Course; Peter H. Beards; Hardcover; $84.00
Analog and Switching Circuit Design : Using Integrated and Discrete Devices; J. Watson; Hardcover;
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Analog Automatic Control Loops in Radar and Ew (Artech House Communication and Electronic
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Analysis and Design of Digital Integrated Circuits (McGraw Hill Series in Electrical
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Basic Mathematics for Electricity and Electronics; Build Your Own Laser, Phaser, Ion Ray Gun & Other
Working Space-Age Projects; Robert E. Iannini; Paperback; $19.76
Cmos Digital Integrated Circuits : Analysis and Design; Sung-Mo Kang, Yusuf Leblebici; Hardcover;
$64.70
Communication Electronics (Basic Skills in Electricity and Electronics); Louis E. Frenzel; Hardcover;
$54.95
Digital System Design; Barry Wilkinson; Paperback; $61.00
Digital Technology : Principles and Practice; Virendra Kumar; Hardcover; $55.50
Electronics in Industry; George M. Chute, R.D. Chute; Hardcover; $70.50
Electronics Math; Bill R. Deem; Hardcover; $68.00
Electronics Mathematics; Robert L. Donovan; Hardcover; $76.00
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ELECTRONICS Section C: References
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FAST ETHERNET
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ATM (Asynchronous Transfer Mode)
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FIBER CHANNEL
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Designing Storage Area Networks: A Practical Reference for Implementing Fibre Channel SANs
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Fibre Channel : Connection to the Future
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Fibre Channel Bench Reference (Endl Scsi Series)
Jeffrey D. Stai / Paperback / Published 1995 Our Price: $195.00 (Special Order)
What is Fibre Channel? (4th Ed.)
Jan Dedlk, et al / Mass Market Paperback / Published 1997
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GIGABIT ETHERNET
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Data Communications Gigabit Ethernet Handbook ~ Usually ships in 24 hours
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Mastering Gigabit Ethernet, Atm & Other High-Speed Lans
V. C Marney-Petix / Paperback / Published 1997 Our Price: $45.95 (Special Order)
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Laser and Eye Safety in the Laboratory; Gabe Garcia, Larryl Matthews; Paperback; $34.95
Medical Lasers and Their Safe Use; David H. Sliney, Stephen L. Trokel; Hardcover (Publisher Out Of
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VCSELs | Communication Lasers | Photodiode Receivers | Fiber Optical Transceivers | Book Store | On Sale Items |
Green, Red, & Infrared Laser Diode Modules | Laser Diodes | Laser Accessories | Laser Products | Electroluminescent Products |
SALES REP. WANTED!
We are looking for Sales Rep. to market our excellent laser products.
These products are high quality and low cost. They are good for
promotion, gift, school, and pet shop ...etc. Please call Mr. Paul Lin at
(909)718-0999 or send e-mail to: paul@lasermate.com.
If you have any comments or request for detail product information, please fill the
Quotation & Information Request Form or mail to: info@lasermate.com.
Please update our new address/phone numbers!
Lasermate Corporation
20264 E. Carrey Road, Walnut, CA 91789, USA Tel: (909) 718-0999 Fax: (909)718-0998
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Laser Products
Do-It-Yourself Laser Pointers
SPECIFICATION OF DIY (Do-It-Yourself) LASER POINTER
WAVELENGTH: 660NM● MODEL NO.: DIY-660● OUTPUT POWER: CLASS IIIA (<5MW) ● BATTERY: 2 X "AAA" 1.5V (INCLUDED)● HOUSING: ABS Plastic● COLOR: BLACK ● WEIGHT: 1 OZ● DIMENSIONS : 0.6" X 1.0" X 4.5"● Some soldering is required.●
Do-It-Yourself Laser Pointers
For your information, the brightness of 660nm laser pointer is about 1.9 time
brighter than that of 670nm. We offer 660nm laser pointer with the same
low price of 670nm laser pointer.
If you have any comments or request for detail product information, please fill the
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Green, Red, & Infrared Laser Diode Modules | Laser Diodes | Laser Accessories| Laser Products | Electroluminescent Products |
Green Laser Pointers
ONLY $275.00 ! PLEASE SEE THE SPEC FOR MORE INFORMATION.
FEATURES:
LOWER OPERATING CURRENT TYPICAL 250 mA!●
COMPACT PACKAGE FITTING IN YOUR POCKET.●
BETTER SWITCH DESIGN.●
LOW COST.●
SPECIFICATIONS
MODEL NO. GLP-03-B (or -S) GLP-05-B (or-S)
WAVELENGTH 532 NM 532 NM
Green Laser Pointers
PULSED PEAK POWER 1.5 - 3 MW @ 25 oC 3 - 5 MW @ 25 oC
LASER CLASS IIIA III A
RANGE* < 2,100 YARD < 3,500 YARD
HOUSING BRASS BRASS
BODY COLOR BLACK (OR SILVER) BLACK (OR SILVER)
OPERATION SWITCH PUSH BUTTON PUSH BUTTON
BATTERY 2 X "N" 1.5V (INCLUDED) 2 X "N" 1.5V (INCLUDED)
DIMENSIONS DIA. 1.3 X L. 13.6 CM DIA. 1.3 X L. 13.6 CM
UNIT PRICE $275.00 $325.00
WARRANTY 90 DAYS 90 DAYS
*The range of laser is variable with factors such as background lightness and air quality.
For your information, the 532 nm laser is about 35 time brighter the 670 nm laser.
To order please click here to use the order form.
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Green Laser Pointers
LS-10 Laser Pointers
SPECIFICATION OF LS-10 LASER POINTER
MODEL NO.: LS-10-650●
WAVELENGTH: 650NM●
OUTPUT POWER: CLASS IIIA (<5MW)●
HOUSING: METAL PEN STYLE●
DIMENSIONS : 10CM (L) x 1.3CM (DIA)●
BATTERY: 2 X "N" 1.5V (INCLUDED)●
COLOR: BLACK●
STANDARD PACKAGING: PLASTIC BOX (ONLY $19.95 FOR ONE!)●
OPTIONAL PACKAGING: LUXURY JEWELRY BOX (ADDING $5.00 MORE)●
WARRANTY: ONE YEAR●
For your information, the brightness of 650nm laser pointer is about 3.4 time
LS-10 Laser Pointers
brighter than that of 670nm. We offer 650nm laser pointer with the same
low price of 670nm laser pointer.
If you have any comments or request for detail product information, please fill the
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LS-10 Laser Pointers
Fashionable Keychain Laser Pointers
SPOTLITE MISSILE KEYCHAIN LASER POINTER only $7.95 for one!
Model No. LS-10K-645 (B) or (S)
SPECIFICATIONS
Wavelength: 645nm
Output power: <5mW
Laser class: IIIa
Operating voltage: 4.5VDC
Battery: Watch battery L1154 (1.5VDC) x 3 included
Style: Bullet keychain
Housing: Metal
Range: 1500 feet**
Color: Black (or Silver) body, gold head & bottom
Size: Dia. 1.32cm x L. 6.6cm
SPOTLITE MISSILE 5-in-1 KEYCHAIN LASER POINTER only 9.95 for one!
Keychain Laser Pointers
Model No. LS-10K-645-5 (B) or (S)
SPECIFICATIONS
Wavelength: 645nm
Output power: <5mW
Laser class: IIIa
Operating voltage: 4.5VDC
Battery: Watch battery L1154 (1.5VDC) x 3 included
Style: Bullet keychain
Housing: Metal
Range: 1500 feet**
4 interchangeable heads: Aiming (circle plus cross hair), Dollar Sign, Spaceship, I love U (included)
Color: Black (or Silver) body, gold head & bottom
Size: Dia. 1.32cm x L. 6.6cm
**The range of laser is variable with factors such as background lightness and air quality.
For your information, the 645nm laser is about 4 time brighter than 670nm laser. We offer 645nm laser pointer
with the same low price of 670nm laser pointer.
If you have any comments or request for detail product information, please fill the
Information Request Form or mail to: info@lasermate.com.
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Keychain Laser Pointers
Mirage Card Laser Pointers
SPECIFICATION OF MIRAGE CARD LASER POINTER
MODEL NO.: LR-6200●
Laser Card Pointers
WAVELENGTH: 650 nm●
OUTPUT POWER: CLASS II (<1mW)●
BATTERY: 2 X LR44 (L1154) batteries (Included)●
HOUSING: ABS Plastic●
COLOR: BLACK●
WEIGHT: 28 g (batteries excluded).●
DIMENSIONS: 5 x 8 x 1.2 cm●
The class II laser pointer is European's Favorite Laser Pointers.
Large blank space with affordable price is ideal for premium item.
The compact body and the unique colorful soft touch button make your presentation easier.
For your information, the brightness of 650nm laser pointer is about 3.4 time
brighter than that of 670nm. We offer 650nm laser pointer with the same
low price of 670nm laser pointer.
If you have any comments or request for detail product information, please fill the
Information Request Form or mail to: info@lasermate.com.
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Laser Card Pointers
Laser Aimer
SPECIFICATION OF OEM LASER AIMER
Wavelength: 635nm, 650nm, 660nm, 808nm, 830nm & 850nm ● Class II (< 1mW) & Class IIIa (< 5mW) ● ACC circuit with short-circuit and reverse-polarity protections● Specially designed windage and elevation set screws for precise aiming ● Dimensions: 15.9 mm Dia. x 56mm L. ● Prices: highly competitive●
For your information, the brightness of 660nm laser aimer is about 1.9 time
brighter than that of 670nm. We offer 660nm laser aimer with the same
Laser Aimer
Diode Driver Circuit Boards
Models of Diode Driver Circuit Boards
Laser Accessories- Diode Drive Circuits
APCR-FH Circuit Board
APCR-FL Circuit Board
APCR-W Circuit Board
APCR-K Circuit Board
ACC-8H Circuit Board
ACC-8L Circuit Board
APC-4H Circuit Board
APC-4L Circuit Board
APCA-42H Analog Modulation
APCA-42L Analog Modulation
APCT-42H TTL Modulation
APCT-42L TTL Modulation
Item No.: APCR-FH
APC with voltage regulator●
Soft-start protection●
Short circuit protection●
Reversal polarity protection●
Output power adjustable ●
Input voltage 4.5 - 6 V DC●
Output power constant●
Size: 18x10x6 mm●
For laser diode with monitor current in the range of 0.1 mA●
Item No.: APCR-FL
APC with voltage regulator●
Soft-start protection●
Short circuit protection●
Reversal polarity protection●
Output power adjustable ●
Input voltage 4.5 - 6 V DC●
Output power constant●
Size: 18x10x6 mm●
For laser diode with monitor current in the range of 0.01 mA●
Laser Accessories- Diode Drive Circuits
Item No.: APCR-W
APC with voltage regulator●
Short circuit protection●
Reversal polarity protection●
Output power adjustable ●
Input voltage 2.8 - 4.5 V DC●
Output power constant●
Size: 12x7.5x5.5 mm●
For laser diode with monitor current in the range of 0.1 mA●
Item No.: APCR-K
APC with voltage regulator●
Short circuit protection●
Reversal polarity protection●
Output power adjustable ●
Input voltage 2.8 - 10 V DC●
Output power constant●
Size: 11x10.5x5.5 mm●
For laser diode with monitor current in the range of 0.01 mA●
Item No.: ACC-8H
Open loop power control ●
Short circuit protection●
Reversal polarity protection●
Output power adjustable ●
Laser Accessories- Diode Drive Circuits
Input voltage 2.8 - 4.5 VDC●
Output power constant●
Size: Dia. 10 x 3 mm●
For laser diode with monitor current in the range of 0.1 mA●
Item No.: ACC-8L
Open loop power control ●
Short circuit protection●
Reversal polarity protection●
Output power adjustable ●
Input voltage 2.7 - 6 VDC●
Output power constant●
Size: Dia. 10 x 3 mm●
For laser diode with monitor current in the range of 0.01 mA●
Item No.: APC-4H
APC without voltage regulator●
Output power adjustable ●
Input voltage 3 - 4.5 V DC●
Output power constant●
Size: Dia. 10 x 3 mm●
For laser diode with monitor current in the range of 0.1 mA●
Item No.: APC-4L
APC without voltage regulator●
Output power adjustable ●
Laser Accessories- Diode Drive Circuits
Input voltage 3 - 6 V DC●
Output power constant●
Size: Dia. 10 x 3 mm●
For laser diode with monitor current in the range of 0.01 mA●
Item No.: APCA-42H
APC with analog modulation●
Output power adjustable ●
Input voltage 3 V DC●
Output power constant●
For laser diode with monitor current in the range of 0.1 mA●
Item No.: APCA-42L
APC with analog modulation●
Output power adjustable ●
Input voltage 3 V DC●
Output power constant●
For laser diode with monitor current in the range of 0.01 mA●
Item No.: APCT-42H
APC with TTL modulation●
Output power adjustable ●
Input voltage 5 V DC●
Output power constant●
For laser diode with monitor current in the range of 0.1 mA●
Laser Accessories- Diode Drive Circuits
Item No.: APCT-42L
APC with TTL modulation●
Output power adjustable ●
Input voltage 5 V DC●
Output power constant●
For laser diode with monitor current in the range of 0.01 mA●
Drive circuits for laser diodes are either automatic power control (APC) circuits that maintain a constant light
output power or automatic current control (ACC) circuits that maintain a constant current.
The output power and wavelength of the laser diode can be affected by the changing of temperature. APC circuits
provide a constant light output power despite variations in ambient temperature. If you have a DC power supply
which provides you an accurate and stable DC voltage. You may use this APC circuit board without voltage
regulator.
APC with voltage regulator circuit enhances the function of APC circuit. It provides constant output power when
the input voltage is between 2.8V DC and 6V DC.
Even with constant current drive, the output power of laser diodes varies with ambient temperature. However, a
slight change of output power during operation is acceptable for many applications such as laser pointer and laser
sight. In addition, battery is the most popular power source for laser diode module. In this case, the output power
of laser will go down caused by the battery voltage decreased. The ACC circuit will provide the laser diode with
constant current and stable output power.
Direct drive circuit is the simplest design circuit for the lowest cost or professional user. The input power is
connected directly to the laser diode without any protection circuit. You can have the complete control ability of
the laser module such as modulation, operating voltage, and power control.
If you have any comments or request for detail product information, please fill the
Information Request Form or mail to: info@lasermate.com.
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Laser Accessories- Diode Drive Circuits
Optics
Collimating Lenses
Compact Beam Expanders
Line Generating Optics
Diffractive Optics
Collimating Lenses
Item No. Description
CL3G-1 3-element glass lens w/AR coating
Effective focal length = 8 mm
Back focal length = 1.5 mm
Numerical aperture = 0.3
Exit pupil = 5 mm dia.
Dimensions = M 9mm x L13mm
CL1P-1 Plastic aspheric lens w/AR coating
Laser Accessories- Optics
Effective focal length = 7.9 +/- 0.05 mm
Back focal length = 6.3 +/-0.05 mm
Numerical aperture = 0.3
Wavelength = 670 +/- 20 nm
RMS wavefront error = 0.01 waves
Exit pupil = 5 mm Dia
Dimensions = Dia. 7 mm x L 3.5 mm
Compact Beam Expanders
Item No. Beam expander Beam diameter Divergence
TC-2X 2X 4 mm < 0.25 mrd
TC-3X 3X 4 mm < 0.17 mrd
Laser Accessories- Optics
TC-7X 7X 4 mm < 0.07 mrd
TC-10X 10X 4 mm < 0.05 mrd
* Connecting to LT- & TX- Laser Module Directly
* All Optical Glass Lens with AR coating
* Focusing Range from 50 cm to infinity
* Max. Entrance Aperture Dia. 4 mm
* Minimizing Beam Spot Size at Long Working Distance
Line Generating Optics
Item No.: LO-90
* LO-90 Line Generating Optics
* Connecting to LT- & LX- Laser Module Directly
* Cylinder Glass Lens
Laser Accessories- Optics
* Full Fan Angle 90 deg.
* Focusing range from 50 cm to infinity
* Thickness of line: 2 mm at 700 cm distance
Item No.: LO-60 LO-45 LO-30 LO-15 LO-04
* LO- 60, 45, 30, 15, 04 Line Generating Optics
* Connecting to LT- & LX- Laser Module Directly
* Glass Lens
* Full Fan Angle 60, 45, 30, 15, 4 deg.
Diffractive Optics
* Creating Linear, Circular, Star, Cross Hair, and Square Patterns
Please call (909)598-6226 for more information.
If you have any comments or request for detail product information, please fill the
Information Request Form or mail to: info@lasermate.com.
Return to Lasermate Corporation Home Page
Laser Accessories- Optics
Specifications of 650nm/5mW Laser Diode
LD-650-5B
Absolute Maximum Ratings (Tc=25ºC)
Parameter Symbol Ratings Unit Pin Connections
TO-18 Package ( 5.6 mm ∅)
Optical Power Po 5 mW
Operating Temperature Top -10 to +40 ºC
Storage Temperature Tstg -40 to +85 ºC
LD reverse Voltage VRLD 2 V
PD reverse Voltage VRPD 30 V
Optical and Electrical Characteristics (Tc=25ºC)
Parameter Symbol Min. Typ. Max. Unit Test Condition
Lasing Wavelength λp640 650 660 nm Po=5mW
Threshold Current Ith 10 15 20 mA CW
Operating Current Iop - 25 45 mA Po=5mW
Operating Voltage Vop - - 2.5 V Po=5mW
Beam Divergence θ // 5 8 11 deg Po=5mW, FWHM
Beam Divergence θ ⊥ 25 31 37 deg Po=5mW, FWHM
Monitor Current Im 10 50 90 µAPo=5mW
Astigmatism (µm) As -11 -µm
The data is presumed to be accurate; however, it is subject to change without notice. Lasermate Corporation makes no
representation as to the accuracy of the information and does not assume any responsibility for errors or omissions
contained herein.
650nm/5mW Laser Diode LD650-5B Specifications
650nm/5mW Laser Diode LD650-5B Specifications
Specifications of 650nm/5mW Laser Diode
LD-650-5A
Absolute Maximum Ratings (Tc=25ºC)
Parameter Symbol Ratings Unit Pin Connections
TO-18 Package ( 5.6 mm ∅)
Optical Power Po 5 mW
Operating Temperature Top -10 to +50 ºC
Storage Temperature Tstg -40 to +85 ºC
LD reverse Voltage VRLD 2 V
PD reverse Voltage VRPD 30 V
Optical and Electrical Characteristics (Tc=25ºC)
Parameter Symbol Min. Typ. Max. Unit Test Condition
Lasing Wavelength λp640 650 660 nm Po=5mW
Threshold Current Ith 10 15 20 mA CW
Operating Current Iop - 25 45 mA Po=5mW
Operating Voltage Vop - - 2.5 V Po=5mW
Beam Divergence θ // 5 8 11 deg Po=5mW, FWHM
Beam Divergence θ ⊥ 25 31 37 deg Po=5mW, FWHM
Monitor Current Im 10 50 90 µAPo=5mW
Astigmatism (µm) As -11 -µm
The data is presumed to be accurate; however, it is subject to change without notice. Lasermate Corporation makes no
representation as to the accuracy of the information and does not assume any responsibility for errors or omissions
contained herein.
650nm/5mW Laser Diode LD650-5A Specifications
650nm/5mW Laser Diode LD650-5A Specifications
Specifications of 650nm/5mW Laser Diode
LD-650-5E, MTTF>20,000 hr at 70 oC 5mW
Absolute Maximum Ratings (Tc=25ºC)
Parameter Symbol Ratings Unit Pin Connections
TO-18 Package ( 5.6 mm ∅)
Optical Power Po 7 mW
Operating Temperature Top -10 to +60 ºC
Storage Temperature Tstg -40 to +85 ºC
LD reverse Voltage VRLD 2 V
PD reverse Voltage VRPD 30 V
Optical and Electrical Characteristics (Tc=25ºC)
Parameter Symbol Min. Typ. Max. Unit Test Condition
Lasing Wavelength λp645 655 660 nm Po=5mW
Threshold Current Ith - 35 45 mA CW
Operating Current Iop - 45 60 mA Po=5mW
Operating Voltage Vop 2.2 2.4 V Po=5mW
Beam Divergence θ // 6 8 12 deg Po=5mW, FWHM
Beam Divergence θ ⊥ 25 32 40 deg Po=5mW, FWHM
Monitor Current Im 0.05 0.2 0.4 mA Po=5mW
Slope Efficiency λd0.3 0.5 0.8 µm
The data is presumed to be accurate; however, it is subject to change without notice. Lasermate Corporation makes no
representation as to the accuracy of the information and does not assume any responsibility for errors or omissions
contained herein.
650nm/5mW Laser Diode LD650-5E Specifications
650nm/5mW Laser Diode LD650-5E Specifications
Specifications of 650nm/10mW Laser Diode
LD-650-10I
Absolute Maximum Ratings (Tc=25ºC)
Parameter Symbol Ratings Unit Pin Connections
TO-18 Package ( 5.6 mm ∅)
Optical Power Po 10 mW
Operating Temperature Top -10 to +40 ºC
Storage Temperature Tstg -15 to +85 ºC
LD reverse Voltage VRLD 2 V
PD reverse Voltage VRPD 30 V
Optical and Electrical Characteristics (Tc=25ºC)
Parameter Symbol Min. Typ. Max. Unit Test Condition
Lasing Wavelength λp640 650 665 nm Po=10mW
Threshold Current Ith 10 20 30 mA CW
Operating Current Iop - 40 60 mA Po=10mW
Operating Voltage Vop - 2.3 2.8 V Po=10mW
Beam Divergence θ // 5 7 12 deg Po=10mW, FWHM
Beam Divergence θ ⊥ 32 38 42 deg Po=10mW, FWHM
Monitor Current Im 0.1 0.3 1 mAPo=10mW
Astigmatism (µm) As -11 -µm
The data is presumed to be accurate; however, it is subject to change without notice. Lasermate Corporation makes no
representation as to the accuracy of the information and does not assume any responsibility for errors or omissions
contained herein.
650nm/10mW Laser Diode LD650-10I Specifications
Specifications of 650nm/20mW Laser Diode
LD-650-20G
Absolute Maximum Ratings (Tc=25ºC)
Parameter Symbol Ratings Unit Pin Connections
TO-18 Package ( 5.6 mm ∅)
Optical Power Po 20 mW
Operating Temperature Top -10 to +40 ºC
Storage Temperature Tstg -40 to +85 ºC
LD reverse Voltage VRLD 2 V
PD reverse Voltage VRPD 30 V
Optical and Electrical Characteristics (Tc=25ºC)
Parameter Symbol Min. Typ. Max. Unit Test Condition
Lasing Wavelength λp645 650 660 nm Po=20mW
Threshold Current Ith - 25 35 mA CW
Operating Current Iop - 60 80 mA Po=20mW
Operating Voltage Vop 2.1 2.3 2.8 V Po=20mW
Beam Divergence θ // 6 7 9 deg Po=20mW, FWHM
Beam Divergence θ ⊥ 32 38 42 deg Po=20mW, FWHM
Monitor Current Im 0.1 0.3 0.85 mA Po=20mW
Slope Efficiency η0.45 0.55 1 mW/mA
The data is presumed to be accurate; however, it is subject to change without notice. Lasermate Corporation makes no
representation as to the accuracy of the information and does not assume any responsibility for errors or omissions
contained herein.
650nm/20mW Laser Diode LD650-20G Specifications
Specifications of 635nm/5mW Laser Diode
LD-635-5A
Absolute Maximum Ratings (Tc=25ºC)
Parameter Symbol Ratings Unit Pin Connections
TO-18 Package ( 5.6 mm ∅)
Optical Power Po 5 mW
Operating Temperature Top -10 to +40 ºC
Storage Temperature Tstg -40 to +85 ºC
LD reverse Voltage VRLD 2 V
PD reverse Voltage VRPD 30 V
Optical and Electrical Characteristics (Tc=25ºC)
Parameter Symbol Min. Typ. Max. Unit Test Condition
Lasing Wavelength λp630 635 640 nm Po=5mW
Threshold Current Ith 30 35 45 mA CW
Operating Current Iop - 45 75 mA Po=5mW
Operating Voltage Vop - - 2.5 V Po=5mW
Beam Divergence θ // 5 8 11 deg Po=5mW, FWHM
Beam Divergence θ ⊥ 25 31 37 deg Po=5mW, FWHM
Monitor Current Im - 15 - µAPo=5mW
Astigmatism (µm) As -11 -µm
The data is presumed to be accurate; however, it is subject to change without notice. Lasermate Corporation makes no
representation as to the accuracy of the information and does not assume any responsibility for errors or omissions
contained herein.
635nm/5mW Laser Diode LD635-5A Specifications
635nm/5mW Laser Diode LD635-5A Specifications
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Specifications of 635nm/5mW Laser Diode LD-635-5L
Absolute Maximum Ratings (Tc=25ºC)
Parameter Symbol Ratings Unit Pin Connections
TO-5 Package ( 9 mm ∅)
Optical Power Po 5 mW
Operating Temperature Top -10 to +40 ºC
Storage Temperature Tstg -40 to +85 ºC
LD reverse Voltage VRLD 2 V
PD reverse Voltage VRPD 30 V
Optical and Electrical Characteristics (Tc=25ºC)
Parameter Symbol Min. Typ. Max. Unit Test Condition
Lasing Wavelength λp625 635 645 nm Po=5mW
Threshold Current Ith - 30 50 mA CW
Operating Current Iop - 40 60 mA Po=5mW
Operating Voltage Vop - 2.2 2.4 V Po=5mW
Beam Divergence θ // 8 10 11 deg Po=5mW, FWHM
Beam Divergence θ ⊥ 25 31 40 deg Po=5mW, FWHM
Monitor Current Im 10 30 90 µAPo=5mW
Astigmatism (µm) As -8-µm
If you have any comments or request for detail product information, please fill the
Quotation & Information Request Form or mail to: info@lasermate.com.
Please update our new address/phone numbers!
Lasermate Corporation
20264 E. Carrey Road, Walnut, CA 91789, USA Tel: (909) 718-0999 Fax: (909)718-0998
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635nm/5mW Laser Diode LD635-5I Specifications
Specifications of 635nm/5mW Laser Diode
LD-635-5I
Absolute Maximum Ratings (Tc=25ºC)
Parameter Symbol Ratings Unit Pin Connections
TO-5 Package ( 9 mm ∅)
Optical Power Po 5 mW
Operating Temperature Top -10 to +50 ºC
Storage Temperature Tstg -40 to +85 ºC
LD reverse Voltage VRLD 2 V
PD reverse Voltage VRPD 30 V
Optical and Electrical Characteristics (Tc=25ºC)
Parameter Symbol Min. Typ. Max. Unit Test Condition
Lasing Wavelength λp- 635 640 nm Po=5mW
Threshold Current Ith - 30 50 mA CW
Operating Current Iop - 40 60 mA Po=5mW
Operating Voltage Vop - 2.2 2.4 V Po=5mW
Beam Divergence θ // 6 8 10 deg Po=5mW, FWHM
Beam Divergence θ ⊥ 25 35 40 deg Po=5mW, FWHM
Monitor Current Im 0.15 0.3 0.65 mA Po=5mW
Astigmatism (µm) As -8-µm
The data is presumed to be accurate; however, it is subject to change without notice. Lasermate Corporation makes no
representation as to the accuracy of the information and does not assume any responsibility for errors or omissions
contained herein.
635nm/5mW Laser Diode LD635-5I Specifications
635nm/5mW Laser Diode LD635-5I Specifications
Specifications of 635nm/10mW Laser Diode
LD-635-10I
Absolute Maximum Ratings (Tc=25ºC)
Parameter Symbol Ratings Unit Pin Connections
TO-5 Package ( 9 mm ∅)
Optical Power Po 10 mW
Operating Temperature Top -10 to +40 ºC
Storage Temperature Tstg -40 to +85 ºC
LD reverse Voltage VRLD 2 V
PD reverse Voltage VRPD 30 V
Optical and Electrical Characteristics (Tc=25ºC)
Parameter Symbol Min. Typ. Max. Unit Test Condition
Lasing Wavelength λp630 635 640 nm Po=10mW
Threshold Current Ith 25 30 40 mA CW
Operating Current Iop 40 55 70 mA Po=10mW
Operating Voltage Vop 1.95 2.2 2.3 V Po=10mW
Beam Divergence θ // 8 10 12 deg Po=10mW, FWHM
Beam Divergence θ ⊥ 30 32 35 deg Po=10mW, FWHM
Monitor Current Im 0.01 0.05 0.3 mA Po=10mW
Slop Efficiency dP/dI 0.2 0.4 0.6 W/A Po=10mW
Differential Temperature dV/dI 5 8 11 ΩPo=10mW
The data is presumed to be accurate; however, it is subject to change without notice. Lasermate Corporation makes no
representation as to the accuracy of the information and does not assume any responsibility for errors or omissions
contained herein.
635nm/10mW Laser Diode LD635-10I Specifications
635nm/10mW Laser Diode LD635-10I Specifications
Specifications of 635nm/15mW Laser Diode
LD-635-15I
Absolute Maximum Ratings (Tc=25ºC)
Parameter Symbol Ratings Unit Pin Connections
TO-5 Package ( 9 mm ∅)
Optical Power Po 15 mW
Operating Temperature Top -10 to +40 ºC
Storage Temperature Tstg -40 to +85 ºC
LD reverse Voltage VRLD 2 V
PD reverse Voltage VRPD 30 V
Optical and Electrical Characteristics (Tc=25ºC)
Parameter Symbol Min. Typ. Max. Unit Test Condition
Lasing Wavelength λp630 635 640 nm Po=15mW
Threshold Current Ith 25 30 40 mA CW
Operating Current Iop 50 65 80 mA Po=15mW
Operating Voltage Vop 1.95 2.2 2.3 V Po=15mW
Beam Divergence θ // 8 10 12 deg Po=15mW, FWHM
Beam Divergence θ ⊥ 30 32 35 deg Po=15mW, FWHM
Monitor Current Im 0.01 0.05 0.3 mA Po=15mW
Slop Efficiency dP/dI 0.35 0.45 0.6 W/A Po=15mW
Differential Temperature dV/dI 5 8 11 ΩPo=15mW
The data is presumed to be accurate; however, it is subject to change without notice. Lasermate Corporation makes no
representation as to the accuracy of the information and does not assume any responsibility for errors or omissions
contained herein.
635nm/15mW Laser Diode LD635-15I Specifications
635nm/15mW Laser Diode LD635-15I Specifications
Specifications of 808nm/5mW Laser Diode
LD-808-5A
Absolute Maximum Ratings (Tc=25ºC)
Parameter Symbol Ratings Unit Pin Connections
TO-18 Package ( 5.6 mm ∅)
Optical Power Po 5 mW
Operating Temperature Top -10 to +40 ºC
Storage Temperature Tstg -40 to +85 ºC
LD reverse Voltage VRLD 2 V
PD reverse Voltage VRPD 30 V
Optical and Electrical Characteristics (Tc=25ºC)
Parameter Symbol Min. Typ. Max. Unit Test Condition
Lasing Wavelength λp800 808 820 nm Po=5mW
Threshold Current Ith 15 25 40 mA CW
Operating Current Iop 25 35 50 mA Po=5mW
Operating Voltage Vop 2.0 2.4 2.7 V Po=5mW
Beam Divergence θ // 8 10 11 deg Po=5mW, FWHM
Beam Divergence θ ⊥ 25 31 40 deg Po=5mW, FWHM
Slope Efficiency dPo/dIop 0.4 0.5 0.7 mW/mA
Monitor Current Im 10 40 90 µAPo=5mW
Astigmatism (µm) As -11 -µm
The data is presumed to be accurate; however, it is subject to change without notice. Lasermate Corporation makes no
representation as to the accuracy of the information and does not assume any responsibility for errors or omissions
contained herein.
808nm/5mW Laser Diode LD808-5I Specifications
808nm/5mW Laser Diode LD808-5I Specifications
Specifications of LD-808-200G Laser Diode
Model No.: LD-808-200G
APPLICATIONS
Diode pump solid state laser● Medical instrument●
FEATURES
Wavelength : λ = 808 nm (Typ.)● Output power : 200mW CW● High Efficiency MOCVD Quantum Well Design● φ 9 mm package ●
Bottom view
Pin configuration:
1. Laser diode cathode
2. Photo diode anode
3. Common
Absolute Maximum Ratings (TC=25oC)
Description Symbol Rating
Optical Power (mW) P0200
Operating Temperature (oC) Top -10 ~ 30
Storage Temperature (oC) Tstg -40 ~ 80
LD Reverse Voltage (V) VRLD 2
PD Reverse Voltage (V) VRPD 15
Optical & Electrical Characteristic
LD-808-200G
Description Symbol Min. Typ. Max Test Condition
Lasing Wavelength(nm) λ805 808 811 P0=180mW
Threshold Current (mA) Ith —150 200 CW
Operating Current (mA) Iop —350 500 P0=180mW
Operating Voltage (V) Vop —1.9 3.0 P0=180mW
Slope Efficiency (W/A) 0.5 0.9
Monitoring Current(mA) Im 0.3 P0=180mW
Beam Divergence (deg) θ// 4 9 17 P0=180mW FWHM
θ ⊥20 30 40
Recommended Operating Temperature (oC) 25
808nm LASER DIODE
* ESD precautions must be taken when handling this unit.
** Invisible laser radiation avoid direct exposure to beam.
Note: Specification subject to change without notice.
If you have any comments or request for detail product information, please fill the
Information Request Form or mail to: info@lasermate.com.
Return to Lasermate Corporation Home Page
808nm LASER DIODE
Specifications of LD-808-500G Laser Diode
Model No.: LD-808-500G
APPLICATIONS
Diode pump solid state laser● Medical instrument●
FEATURES
Wavelength : λ = 808 nm (Typ.)● Output power : 500mW CW● High Efficiency MOCVD Quantum Well Design● φ 9 mm package ●
Bottom view
Pin configuration:
1. Laser diode cathode
2. Photo diode anode
3. Common
Absolute Maximum Ratings (TC=25oC)
Description Symbol Rating
Optical Power (mW) P0550
Operating Temperature (oC) Top -10 ~ 30
Storage Temperature (oC) Tstg -40 ~ 80
LD Reverse Voltage (V) VRLD 2
PD Reverse Voltage (V) VRPD 15
Optical & Electrical Characteristic
LD-808-500G
Description Symbol Min. Typ. Max Test Condition
Lasing Wavelength(nm) λ805 808 811 P0=500mW
Threshold Current (mA) Ith —160 300 CW
Operating Current (mA) Iop —750 900 P0=500mW
Operating Voltage (V) Vop —2.2 2.8 P0=500mW
Slope Efficiency (W/A) 0.5 0.9
Monitoring Current(mA) Im0.12 0.8 1.6 P0=500mW
Beam Divergence (deg) θ// 4 9 17 P0=500mW FWHM
θ ⊥20 30 40
Recommended Operating Temperature (oC) 25
808nm LASER DIODE
* ESD precautions must be taken when handling this unit.
** Invisible laser radiation avoid direct exposure to beam.
Note: Specification subject to change without notice.
If you have any comments or request for detail product information, please fill the
Information Request Form or mail to: info@lasermate.com.
Return to Lasermate Corporation Home Page
808nm LASER DIODE
Specifications of LD-808-1000G Laser Diode
Model No.: LD-808-1000G
APPLICATIONS
Diode pump solid state laser● Medical instrument ●
FEATURES
Wavelength : λ = 808 nm (Typ.)● Output power : 1000mW CW● High Efficiency MOCVD Quantum Well Design● 9mm φ package ●
Bottom view
Unit: inch
Pin configuration:
1: LD cathode
2: LD anode
Absolute Maximum Ratings (TC=25oC)
Description Symbol Rating
Optical Power (mW) P01000
Operating Temperature (oC) Top -10 ~ 40
Storage Temperature (oC) Tstg -30 ~ 70
LD Reverse Voltage (V) VRLD 3
Optical & Electrical Characteristic
LD-808-1000G
Description Symbol Min. Typ. Max Test Condition
Lasing Wavelength(nm) λ790 808 815 P0=1000mW
Threshold Current (mA) Ith —200 400 CW
Operating Current (A) Iop —1.20 1.50 P0=1000mW
Operating Voltage (V) Vop 1.8 2.0 2.2 P0=1000mW
Slope Efficiency (W/A) 0.8 1.0 1.1
Beam Divergence (deg) θ// 10 11 12 P0=1000mW FWHM
θ ⊥25 30 40
Recommended Operating Temperature (oC) 25
* ESD precautions must be taken when handling this unit.
** Invisible laser radiation avoid direct exposure to beam.
808nm LASER DIODE
Specifications of LD-808-1W Laser Diode
Model No.: LD-808-1W
APPLICATIONS
Diode pump solid state laser● Medical instrument●
FEATURES
Wavelength : λ = 808 nm (Typ.)● Output power : 1W CW● High Efficiency MOCVD Quantum Well Design● φ 9 mm package ●
Bottom view
Pin configuration:
1. Laser diode cathode
2. Photo diode anode
3. Common
Absolute Maximum Ratings (TC=25oC)
Description Symbol Rating
Optical Power (mW) P01100
Operating Temperature (oC) Top -10 ~ 30
Storage Temperature (oC) Tstg -40 ~ 80
LD Reverse Voltage (V) VRLD 2
PD Reverse Voltage (V) VRPD 15
Optical & Electrical Characteristic
LD-808-1W
Description Symbol Min. Typ. Max Test Condition
Lasing Wavelength(nm) λ805 808 811 P0=1W
Threshold Current (A) Ith —0.3 0.5 CW
Operating Current (A) Iop —1.4 2 P0=1W
Operating Voltage (V) Vop —2.1 3.0 P0=1W
Slope Efficiency (W/A) 0.5 0.9
Monitoring Current(mA) Im 0.3 1.5 6P0=1W
Beam Divergence (deg) θ// 4 9 17 P0=1W FWHM
θ ⊥20 30 40
Recommended Operating Temperature (oC) 25
808nm LASER DIODE
* ESD precautions must be taken when handling this unit.
** Invisible laser radiation avoid direct exposure to beam.
Note: Specification subject to change without notice.
If you have any comments or request for detail product information, please fill the
Information Request Form or mail to: info@lasermate.com.
Return to Lasermate Corporation Home Page
808nm LASER DIODE
Specifications of 830nm/40mW Laser Diode
LD-830-40I
Absolute Maximum Ratings (Tc=25ºC)
Parameter Symbol Ratings Unit Pin Connections
TO-5 Package ( 9 mm ∅)
Optical Power Po 40 mW
Operating Temperature Top -10 to +50 ºC
Storage Temperature Tstg -40 to +85 ºC
LD reverse Voltage VRLD 2 V
PD reverse Voltage VRPD 30 V
Optical and Electrical Characteristics (Tc=25ºC)
Parameter Symbol Min. Typ. Max. Unit Test Condition
Lasing Wavelength λp815 830 845 nm Po=30mW
Threshold Current Ith - 40 70 mA CW
Operating Current Iop - 85 130 mA Po=30mW
Operating Voltage Vop - 2.4 3.0 V Po=30mW
Beam Divergence θ // 7 10 15 deg Po=30mW, FWHM
Beam Divergence θ ⊥ 15 25 40 deg Po=30mW, FWHM
Differential Efficiency dPo/dIop 0.4 0.7 - mW/mA Po=30mW
Monitor Current Im 0.15 0.35 - mA Po=30mW
The data is presumed to be accurate; however, it is subject to change without notice. Lasermate Corporation makes no
representation as to the accuracy of the information and does not assume any responsibility for errors or omissions
contained herein.
830nm/40mW Laser Diode LD830-40I Specifications
830nm/40mW Laser Diode LD830-40I Specifications
Specifications of 980 nm 50mW Laser Diode
LD-980-50I
Features:
980nm 50mW laser diode●
single mode index guided●
Low threshold current●
No monitoring PD●
Output power stable (+/-10% ) with temperature change (20 oC)●
MTTF > 3,000 hours @ 25 oC●
Low cost●
Absolute Maximum Ratings (Tc=25ºC)
Parameter Symbol Ratings Unit
Pin Connections
No monitoring PD
TO-18 Package ( 5.6 mm ∅)
Optical Power Po 50 mW
Operating Temperature Top 0 to +80 ºC
Storage Temperature Tstg -40 to +85 ºC
LD reverse Voltage VRLD 2 V
PD reverse Voltage VRPD 30 V
Optical and Electrical Characteristics (Tc=25ºC)
Parameter Symbol Min. Typ. Max. Unit Test Condition
Lasing Wavelength λp965 980 995 nm Po=50mW
Threshold Current Ith 3 8 11 mA CW
Operating Current Iop 80 80 100 mA Po=50mW
Operating Voltage Vop 1.7 1.9 2.1 V Po=50mW
Beam Divergence θ // 8 10 12 deg Po=50mW, FWHM
980nm 50mW Laser Diode LD980-50I Specifications
Beam Divergence θ ⊥ 33 35 37 deg Po=50mW, FWHM
Slop Efficiency dP/dI 0.6 0.7 0.8 W/A Po=50mW
Differential Temperature dV/dI 5 8 10 ΩPo=50mW
Operating Temperature Top 0 25 80 ºC
The data is presumed to be accurate; however, it is subject to change without notice. Lasermate Corporation makes no
representation as to the accuracy of the information and does not assume any responsibility for errors or omissions
contained herein.
980nm 50mW Laser Diode LD980-50I Specifications
Specifications of 980 nm 100mW Laser Diode
LD-980-100I
Features:
980nm 100mW laser diode●
single mode index guided●
Low threshold current●
No monitoring PD●
Output power stable (+/-10% ) with temperature change (20 oC)●
MTTF > 3,000 hours @ 25 oC●
Low cost●
Absolute Maximum Ratings (Tc=25ºC)
Parameter Symbol Ratings Unit
Pin Connections
No monitoring PD
TO-5 Package ( 9 mm ∅)
Optical Power Po 100 mW
Operating Temperature Top 0 to +80 ºC
Storage Temperature Tstg -40 to +85 ºC
LD reverse Voltage VRLD 2 V
PD reverse Voltage VRPD 30 V
Optical and Electrical Characteristics (Tc=25ºC)
Parameter Symbol Min. Typ. Max. Unit Test Condition
Lasing Wavelength λp965 980 995 nm Po=100mW
Threshold Current Ith 7 10 15 mA CW
Operating Current Iop 140 150 170 mA Po=100mW
Operating Voltage Vop 1.7 1.9 2.1 V Po=100mW
Beam Divergence θ // 8 10 12 deg Po=100mW, FWHM
980nm 100mW Laser Diode LD980-100I Specifications
Beam Divergence θ ⊥ 33 35 37 deg Po=100mW, FWHM
Slop Efficiency dP/dI 0.7 0.75 0.8 W/A Po=100mW
Differential Temperature dV/dI 5 8 10 ΩPo=100mW
Operating Temperature Top 0 25 80 ºC
The data is presumed to be accurate; however, it is subject to change without notice. Lasermate Corporation makes no
representation as to the accuracy of the information and does not assume any responsibility for errors or omissions
contained herein.
980nm 100mW Laser Diode LD980-100I Specifications
VCSEL Diodes
VCSEL Diodes for General Applications
VCSEL Diodes for Data Communications
Infrared 850 nm wavelength, output < 5 mW, circular laser beam, low divergence angle, low
threshold current.
●
Various package types such as epoxy molded leadframe or ceramic header, TO-46 metal can with &
without monitoring PD.
●
Providing high performance laser output with narrow linewidth● Suitable to the optical applications of sensoring, automatic control, reading, free-space
communication, pickup head, etc..
●
VCSEL Diodes for General Applications
Please click each Model No. for the detail spec.
MODEL NO. PACKAGE DESCRIPTION PICTURE
VCE-A85B20 850nm VCSEL in epoxy molded with
ceramic heat sink
VCE-C85B20 850nm VCSEL in epoxy molded with
sharply-round surface
VCE-D85B20 850nm VCSEL in epoxy molded with
dia. 5mm round top surface
VCE-E85B20 850nm VCSEL in epoxy molded with flat
top surface
VCSEL device
VCE-F85B20 850nm VCSEL in epoxy molded with
dia. 3mm round top surface
VCT-A85B20 850nm VCSEL in TO-46 metal can with
cap lens
VCT-B85B20 850nm VCSEL in TO-46 metal can with
dome lens cap
VCT-F85B20 850nm VCSEL in TO-46 metal can with
flat window cap
VCSEL Diodes for Data Communications
Please click each Model No. for the detail spec.
MODEL NO. PACKAGE DESCRIPTION PICTURE
VCT-A85A40 850nm VCSEL diode without PD in 4-pin TO-46
metal can with cap lens
VCT-A85A41
&
VCT-A85A42
850nm VCSEL diode with PD in 4-pin TO-46
metal can with cap lens
VCSEL device
VCT-F85A40 850nm VCSEL diode without PD in 4-pin TO-46
metal can with flat window cap
VCT-F85A41
&
VCT-F85A42
850nm VCSEL diode with PD in 4-pin TO-46
metal can with flat window cap
If you have any comments or request for detail product information, please fill the
Information Request Form or mail to: info@lasermate.com.
Return to Lasermate Corporation Home Page
VCSEL device
Specifications of VCE-A85B20 VCSEL Diode
Model No. VCE-A85B20
Features Picture
• Epoxy molded with round emission surface.
• Ceramic heat sink.
• Low dependence of power output over temperature.
• Miniature, easy for mounting.
• Driving current between 8 to 15 mA.
• Symmetrical beam.
ELECTRO-OPTICAL CHARACTERISTICS: (Tc=25ºC)
Parameter Symbol Min. Typ. Max. Unit Test Conditions(1)
Lasing Wavelength λp820 850 870 nm IF=15 mA(2)
Output Power Po 1.0 2.0 4.0 mW IF=15 mA
Threshold Current Ith 5 10 mA CW
Operating Current Iop 12 mA Adjustable to establish 1.5 mW
output power
Slope efficiency η 0.20 mW/mA IF=15 mA(3)
Forward Voltage VF2.0 2.2 2.5 V IF=15 mA
Breakdown Voltage VBD 10 15 VIR=10 µA
Series resistance Rs 40 ΩIF=15 mA
Beam Divergence θ 7 deg IF=15 mA(4)
Notes:
1.All parameters except mentioned are measured in I F =15 mA, 25°C, CW.
2.Higher power can be provided under request.
3.Slope efficiency are defined as ∆P/(15-Ith ) at 25°C.
4.Beam divergence is defined as the light intensity Full Width at its Half Maxima (FWHM).
THERMAL CHARACTERISTICS:
Parameter Symbol Min. Typ. Max. Unit Test Conditions
Thermal Resistance Rth 1000 °C /W TA= 25 oC
Ith Temperature Variation ∆ Ith -1.5 +1.5 mA TA= 0 to 70 oC
Specifications of VCE-A85B20 VCSEL Diode
VF Temperature Coefficient ∆VF/∆T -3.0 mV/°C TA= 0 to 70 oC, IF=15 mA
ηTemperature Coefficient ∆η/∆T -0.25 %/oCTA= 0 to 70 oC, IF=15 mA
λp Temperature Coefficient ∆λp/∆T 0.07 nm/oCTA= 0 to 70 oC, IF=15 mA
ABSOLUTE MAXIMUM RATINGS:
Parameter Min. Max. Unit Test Conditions
Storage Temperature -40 100 °C
Operating Temperature -20 70 °C
Lead Solder Temperature 260 °C 5 seconds
Continuous Forward Current 40 mA
Continuous Reverse Voltage 10 V
OUTLINE DIMENSIONS:
Unit: mm●
Specifications of VCE-A85B20 VCSEL Diode
Fig. 1 Typical Optical Characteristics
Fig. 2 Typical Electrical Characteristics
Specifications of VCE-A85B20 VCSEL Diode
Fig. 3 Spectrum When Driving Current 15 mA
Fig. 4 Temperature Dependence of Threshold Current
If you have any comments or request for detail product information, please fill the
Information Request Form or mail to: info@lasermate.com.
Return to Lasermate Corporation Home Page
Specifications of VCE-A85B20 VCSEL Diode
Specifications of VCE-C85B20 VCSEL Diode
Model No. VCE-C85B20
Features Picture
• Epoxy molded with sharply-round emission surface.
• Copper leadframe, good heat dissipation.
• Low dependence of power output over temperature.
• Driving current between 8 to 15 mA.
• Nominal 1.5°emission angle.
• Ideal for long distance detection.
ELECTRO-OPTICAL CHARACTERISTICS: (Tc=25ºC)
Parameter Symbol Min. Typ. Max. Unit Test Conditions(1)
Lasing Wavelength λp820 850 870 nm IF=15 mA(2)
Output Power Po 1.0 2.0 4.0 mW IF=15 mA
Threshold Current Ith 5 10 mA CW
Operating Current Iop 12 mA Adjustable to establish 1.5 mW
output power
Slope efficiency η 0.20 mW/mA IF=15 mA(3)
Forward Voltage VF2.0 2.2 2.5 V IF=15 mA
Breakdown Voltage VBD 10 15 VIR=10 µA
Series resistance Rs 40 ΩIF=15 mA
Beam Divergence θ 1.5 deg IF=15 mA(4)
Notes:
1.All parameters except mentioned are measured in I F =15 mA, 25°C, CW.
2.Higher power can be provided under request.
3.Slope efficiency are defined as ∆P/(15-Ith ) at 25°C.
4.Beam divergence is defined as the light intensity Full Width at its Half Maxima (FWHM).
THERMAL CHARACTERISTICS:
Parameter Symbol Min. Typ. Max. Unit Test Conditions
Thermal Resistance Rth 1000 °C /W TA= 25 oC
Ith Temperature Variation ∆ Ith -1.5 +1.5 mA TA= 0 to 70 oC
Specifications of VCE-C85B20 VCSEL Diode
VF Temperature Coefficient ∆VF/∆T -3.0 mV/°C TA= 0 to 70 oC, IF=15 mA
ηTemperature Coefficient ∆η/∆T -0.25 %/oCTA= 0 to 70 oC, IF=15 mA
λp Temperature Coefficient ∆λp/∆T 0.07 nm/oCTA= 0 to 70 oC, IF=15 mA
ABSOLUTE MAXIMUM RATINGS:
Parameter Min. Max. Unit Test Conditions
Storage Temperature -40 100 °C
Operating Temperature -20 70 °C
Lead Solder Temperature 260 °C 5 seconds
Continuous Forward Current 40 mA
Continuous Reverse Voltage 10 V
OUTLINE DIMENSIONS:
Unit: mm●
Specifications of VCE-C85B20 VCSEL Diode
Specifications of VCE-C85B20 VCSEL Diode
Fig. 1 Typical Optical Characteristics
Fig. 2 Typical Electrical Characteristics
Fig. 3 Spectrum When Driving Current 15 mA
Specifications of VCE-C85B20 VCSEL Diode
Specifications of VCE-D85B20 VCSEL Diode
Model No. VCE-D85B20
Features Picture
• Epoxy molded with round emission surface.
• Copper leadframe, good heat dissipation.
• Low dependence of power output over temperature.
• Driving current between 8 to 15 mA.
• Nominal 5°emission angle.
• Ideal for high resolution detection.
ELECTRO-OPTICAL CHARACTERISTICS: (Tc=25ºC)
Parameter Symbol Min. Typ. Max. Unit Test Conditions(1)
Lasing Wavelength λp820 850 870 nm IF=15 mA(2)
Output Power Po 1.0 2.0 4.0 mW IF=15 mA
Threshold Current Ith 5 10 mA CW
Operating Current Iop 12 mA Adjustable to establish 1.5 mW
output power
Slope efficiency η 0.20 mW/mA IF=15 mA(3)
Forward Voltage VF2.0 2.2 2.5 V IF=15 mA
Breakdown Voltage VBD 10 15 VIR=10 µA
Series resistance Rs 40 ΩIF=15 mA
Beam Divergence θ 5 deg IF=15 mA(4)
Notes:
1.All parameters except mentioned are measured in I F =15 mA, 25°C, CW.
2.Higher power can be provided under request.
3.Slope efficiency are defined as ∆P/(15-Ith ) at 25°C.
4.Beam divergence is defined as the light intensity Full Width at its Half Maxima (FWHM).
THERMAL CHARACTERISTICS:
Parameter Symbol Min. Typ. Max. Unit Test Conditions
Thermal Resistance Rth 1000 °C /W TA= 25 oC
Ith Temperature Variation ∆ Ith -1.5 +1.5 mA TA= 0 to 70 oC
Specifications of VCE-D85B20 VCSEL Diode
VF Temperature Coefficient ∆VF/∆T -3.0 mV/°C TA= 0 to 70 oC, IF=15 mA
ηTemperature Coefficient ∆η/∆T -0.25 %/oCTA= 0 to 70 oC, IF=15 mA
λp Temperature Coefficient ∆λp/∆T 0.07 nm/oCTA= 0 to 70 oC, IF=15 mA
ABSOLUTE MAXIMUM RATINGS:
Parameter Min. Max. Unit Test Conditions
Storage Temperature -40 100 °C
Operating Temperature -20 70 °C
Lead Solder Temperature 260 °C 5 seconds
Continuous Forward Current 40 mA
Continuous Reverse Voltage 10 V
OUTLINE DIMENSIONS:
Unit: mm●
Specifications of VCE-D85B20 VCSEL Diode
Fig. 1 Typical Optical Characteristics
Fig. 2 Typical Electrical Characteristics
Specifications of VCE-D85B20 VCSEL Diode
Fig. 3 Spectrum When Driving Current 15 mA
Fig. 4 Temperature Dependence of Threshold Current
If you have any comments or request for detail product information, please fill the
Information Request Form or mail to: info@lasermate.com.
Return to Lasermate Corporation Home Page
Specifications of VCE-D85B20 VCSEL Diode
Specifications of VCE-E85B20 VCSEL Diode
Model No. VCE-E85B20
Features Picture
• Epoxy molded with flat emission surface.
• Copper leadframe, good heat dissipation.
• Low dependence of power output over temperature.
• Driving current between 8 to 15 mA.
• Symmetrical beam
ELECTRO-OPTICAL CHARACTERISTICS: (Tc=25ºC)
Parameter Symbol Min. Typ. Max. Unit Test Conditions(1)
Lasing Wavelength λp820 850 870 nm IF=15 mA(2)
Output Power Po 1.0 2.0 4.0 mW IF=15 mA
Threshold Current Ith 5 10 mA CW
Operating Current Iop 12 mA Adjustable to establish 1.5 mW
output power
Slope efficiency η 0.20 mW/mA IF=15 mA(3)
Forward Voltage VF2.0 2.2 2.5 V IF=15 mA
Breakdown Voltage VBD 10 15 VIR=10 µA
Series resistance Rs 40 ΩIF=15 mA
Beam Divergence θ 10 deg IF=15 mA(4)
Notes:
1.All parameters except mentioned are measured in I F =15 mA, 25°C, CW.
2.Higher power can be provided under request.
3.Slope efficiency are defined as ∆P/(15-Ith ) at 25°C.
4.Beam divergence is defined as the light intensity Full Width at its Half Maxima (FWHM).
THERMAL CHARACTERISTICS:
Parameter Symbol Min. Typ. Max. Unit Test Conditions
Thermal Resistance Rth 1000 °C /W TA= 25 oC
Ith Temperature Variation ∆ Ith -1.5 +1.5 mA TA= 0 to 70 oC
VF Temperature Coefficient ∆VF/∆T -3.0 mV/°C TA= 0 to 70 oC, IF=15 mA
Specifications of VCE-E85B20 VCSEL Diode
ηTemperature Coefficient ∆η/∆T -0.25 %/oCTA= 0 to 70 oC, IF=15 mA
λp Temperature Coefficient ∆λp/∆T 0.07 nm/oCTA= 0 to 70 oC, IF=15 mA
ABSOLUTE MAXIMUM RATINGS:
Parameter Min. Max. Unit Test Conditions
Storage Temperature -40 100 °C
Operating Temperature -20 70 °C
Lead Solder Temperature 260 °C 5 seconds
Continuous Forward Current 40 mA
Continuous Reverse Voltage 10 V
OUTLINE DIMENSIONS:
Unit: mm●
Specifications of VCE-E85B20 VCSEL Diode
Fig. 1 Typical Optical Characteristics
Fig. 2 Typical Electrical Characteristics
Specifications of VCE-E85B20 VCSEL Diode
Fig. 3 Spectrum When Driving Current 15 mA
Fig. 4 Temperature Dependence of Threshold Current
If you have any comments or request for detail product information, please fill the
Information Request Form or mail to: info@lasermate.com.
Return to Lasermate Corporation Home Page
Specifications of VCE-E85B20 VCSEL Diode
Specifications of VCE-F85B20 VCSEL Diode
Model No. VCE-F85B20
Features Picture
• Epoxy molded with round emission surface.
• Copper leadframe, good heat dissipation.
• Low dependence of power output over temperature.
• Driving current between 8 to 15 mA.
• Nominal 4°emission angle.
• Miniature, ideal for high resolution detection.
ELECTRO-OPTICAL CHARACTERISTICS: (Tc=25ºC)
Parameter Symbol Min. Typ. Max. Unit Test Conditions(1)
Lasing Wavelength λp820 850 870 nm IF=15 mA(2)
Output Power Po 1.0 2.0 4.0 mW IF=15 mA
Threshold Current Ith 5 10 mA CW
Operating Current Iop 12 mA Adjustable to establish 1.5 mW
output power
Slope Efficiency η 0.20 mW/mA IF=15 mA(3)
Forward Voltage VF2.0 2.2 2.5 V IF=15 mA
Breakdown Voltage VBD 10 15 VIR=10 µA
Series Resistance Rs 40 ΩIF=15 mA
Beam Divergence θ 4 deg IF=15 mA(4)
Notes:
1.All parameters except mentioned are measured in I F =15 mA, 25°C, CW.
2.Higher power can be provided under request.
3.Slope efficiency are defined as ∆P/(15-Ith ) at 25°C.
4.Beam divergence is defined as the light intensity Full Width at its Half Maxima (FWHM).
THERMAL CHARACTERISTICS:
Parameter Symbol Min. Typ. Max. Unit Test Conditions
Specifications of VCE-F85B20 VCSEL Diode
Thermal Resistance Rth 1000 °C /W TA= 25 oC
Ith Temperature Variation ∆ Ith -1.5 +1.5 mA TA= 0 to 70 oC
VF Temperature Coefficient ∆VF/∆T -3.0 mV/°C TA= 0 to 70 oC, IF=15 mA
ηTemperature Coefficient ∆η/∆T -0.25 %/oCTA= 0 to 70 oC, IF=15 mA
λp Temperature Coefficient ∆λp/∆T 0.07 nm/oCTA= 0 to 70 oC, IF=15 mA
ABSOLUTE MAXIMUM RATINGS:
Parameter Min. Max. Unit Test Conditions
Storage Temperature -40 100 °C
Operating Temperature -20 70 °C
Lead Solder Temperature 260 °C 5 seconds
Continuous Forward Current 40 mA
Continuous Reverse Voltage 10 V
OUTLINE DIMENSIONS:
Unit: mm●
Specifications of VCE-F85B20 VCSEL Diode
Specifications of VCE-F85B20 VCSEL Diode
Fig. 1 Typical Optical Characteristics
Fig. 2 Typical Electrical Characteristics
Fig. 3 Spectrum When Driving Current 15 mA
Specifications of VCE-F85B20 VCSEL Diode
Specifications of CVT-A85B20 VCSEL Diode
Model No. CVT-A85B20
Features Picture
• Industry standard TO-46 package with cap lens.
• Low dependence of power output over temperature.
• Symmetrical beam.
• Cost-effective laser light source.
ELECTRO-OPTICAL CHARACTERISTICS: (Tc=25ºC)
Parameter Symbol Min. Typ. Max. Unit Test Conditions(1)
Lasing Wavelength λp820 850 870 nm IF=15 mA(2)
Output Power Po 1.0 2.0 4.0 mW IF=15 mA
Threshold Current Ith 5 10 mA CW
Operating Current Iop 12 mA Adjustable to establish 1.5 mW
output power
Slope efficiency η 0.20 mW/mA IF=15 mA(3)
Forward Voltage VF2.0 2.2 2.5 V IF=15 mA
Breakdown Voltage VBD 10 15 VIR=10 µA
Series Resistance Rs 40 ΩIF=15 mA
Beam Divergence θ 15 deg IF=15 mA(4)
Focal Length F 0.7 mm From the surface of lens
Notes:
1.All parameters except mentioned are measured in I F =15 mA, 25°C, CW.
2.Higher power can be provided under request.
3.Slope efficiency are defined as ∆P/(15-Ith ) at 25°C.
4.Beam divergence is defined as the light intensity Full Width at its Half Maxima (FWHM).
THERMAL CHARACTERISTICS:
Parameter Symbol Min. Typ. Max. Unit Test Conditions
Thermal Resistance Rth 1000 °C /W TA= 25 oC
Specifications of VCT-A85B20 VCSEL Diode
Ith Temperature Variation ∆ Ith -1.5 +1.5 mA TA= 0 to 70 oC
VF Temperature Coefficient ∆VF/∆T -3.0 mV/°C TA= 0 to 70 oC, IF=15 mA
ηTemperature Coefficient ∆η/∆T -0.20 %/oCTA= 0 to 70 oC, IF=15 mA
λp Temperature Coefficient ∆λp/∆T 0.06 nm/oCTA= 0 to 70 oC, IF=15 mA
ABSOLUTE MAXIMUM RATINGS:
Parameter Min. Max. Unit Test Conditions
Storage Temperature -40 120 °C
Operating Temperature -20 85 °C
Lead Solder Temperature 260 °C 5 seconds
Continuous Forward Current 40 mA
Continuous Reverse Voltage 10 V
OUTLINE DIMENSIONS:
Unit: mm●
Specifications of VCT-A85B20 VCSEL Diode
Specifications of VCT-A85B20 VCSEL Diode
Fig. 1 Typical Optical Characteristics
Fig. 2 Typical Electrical Characteristics
Fig. 3 Spectrum When Driving Current 15 mA
Specifications of VCT-A85B20 VCSEL Diode
Specifications of VCT-B85B20 VCSEL Diode
Model No. VCT-B85B20
Features Picture
• Industry standard TO-46 package with dome lens.
• Very low beam divergence without extra optics.
• Low dependence of power output over temperature.
• Circularly symmetrical beam.
• Ideal for applications of long-distance sensing.
ELECTRO-OPTICAL CHARACTERISTICS: (Tc=25ºC)
Parameter Symbol Min. Typ. Max. Unit Test Conditions(1)
Lasing Wavelength λp820 850 870 nm IF=15 mA(2)
Output Power Po 1.0 2.0 4.0 mW IF=15 mA
Threshold Current Ith 5 10 mA CW
Operating Current Iop 12 mA Adjustable to establish 1.5 mW
output power
Slope Efficiency η 0.20 mW/mA IF=15 mA(3)
Forward Voltage VF2.0 2.2 2.5 V IF=15 mA
Breakdown Voltage VBD 10 15 VIR=10 µA
Series Resistance Rs 40 ΩIF=15 mA
Beam Divergence θ 2 deg IF=15 mA(4)
Notes:
1.All parameters except mentioned are measured in I F =15 mA, 25°C, CW.
2.Higher power can be provided under request.
3.Slope efficiency are defined as ∆P/(15-Ith ) at 25°C.
4.Beam divergence is defined as the light intensity Full Width at its Half Maxima (FWHM).
THERMAL CHARACTERISTICS:
Parameter Symbol Min. Typ. Max. Unit Test Conditions
Thermal Resistance Rth 1000 °C /W TA= 25 oC
Ith Temperature Variation ∆ Ith -1.5 +1.5 mA TA= 0 to 70 oC
Specifications of VCT-B85B20 VCSEL Diode
VF Temperature Coefficient ∆VF/∆T -3.0 mV/°C TA= 0 to 70 oC, IF=15 mA
ηTemperature Coefficient ∆η/∆T -0.20 %/oCTA= 0 to 70 oC, IF=15 mA
λp Temperature Coefficient ∆λp/∆T 0.06 nm/oCTA= 0 to 70 oC, IF=15 mA
ABSOLUTE MAXIMUM RATINGS:
Parameter Min. Max. Unit Test Conditions
Storage Temperature -40 120 °C
Operating Temperature -20 85 °C
Lead Solder Temperature 260 °C 5 seconds
Continuous Forward Current 40 mA
Continuous Reverse Voltage 10 V
OUTLINE DIMENSIONS:
Unit: mm●
Specifications of VCT-B85B20 VCSEL Diode
Fig. 1 Typical Optical Characteristics
Fig. 2 Typical Electrical Characteristics
Specifications of VCT-B85B20 VCSEL Diode
Fig. 3 Spectrum When Driving Current 15 mA
Fig. 4 Temperature Dependence of Threshold Current
If you have any comments or request for detail product information, please fill the
Information Request Form or mail to: info@lasermate.com.
Return to Lasermate Corporation Home Page
Specifications of VCT-B85B20 VCSEL Diode
Specifications of VCT-F85B20 VCSEL Diode
Model No. VCT-F85B20
Features Picture
• Industry standard TO-46 package with flat window glass.
• Low dependence of power output over temperature.
• Symmetrical beam.
• Cost-effective laser light source.
ELECTRO-OPTICAL CHARACTERISTICS: (Tc=25ºC)
Parameter Symbol Min. Typ. Max. Unit Test Conditions(1)
Lasing Wavelength λp820 850 870 nm IF=15 mA(2)
Output Power Po 1.0 2.0 4.0 mW IF=15 mA
Threshold Current Ith 5 10 mA CW
Operating Current Iop 12 mA Adjustable to establish 1.5 mW
output power
Slope Efficiency η 0.20 mW/mA IF=15 mA(3)
Forward Voltage VF2.0 2.2 2.5 V IF=15 mA
Breakdown Voltage VBD 10 15 VIR=10 µA
Series Resistance Rs 40 ΩIF=15 mA
Beam Divergence θ 8 deg IF=15 mA(4)
Notes:
1.All parameters except mentioned are measured in I F =15 mA, 25°C, CW.
2.Higher power can be provided under request.
3.Slope efficiency are defined as ∆P/(15-Ith ) at 25°C.
4.Beam divergence is defined as the light intensity Full Width at its Half Maxima (FWHM).
THERMAL CHARACTERISTICS:
Parameter Symbol Min. Typ. Max. Unit Test Conditions
Thermal Resistance Rth 1000 °C /W TA= 25 oC
Ith Temperature Variation ∆ Ith -1.5 +1.5 mA TA= 0 to 70 oC
Specifications of VCT-F85B20 VCSEL Diode
VF Temperature Coefficient ∆VF/∆T -3.0 mV/°C TA= 0 to 70 oC, IF=15 mA
ηTemperature Coefficient ∆η/∆T -0.20 %/oCTA= 0 to 70 oC, IF=15 mA
λp Temperature Coefficient ∆λp/∆T 0.06 nm/oCTA= 0 to 70 oC, IF=15 mA
ABSOLUTE MAXIMUM RATINGS:
Parameter Min. Max. Unit Test Conditions
Storage Temperature -40 120 °C
Operating Temperature -20 85 °C
Lead Solder Temperature 260 °C 5 seconds
Continuous Forward Current 40 mA
Continuous Reverse Voltage 10 V
OUTLINE DIMENSIONS:
Unit: mm●
Specifications of VCT-F85B20 VCSEL Diode
Fig. 1 Typical Optical Characteristics
Fig. 2 Typical Electrical Characteristics
Specifications of VCT-F85B20 VCSEL Diode
Fig. 3 Spectrum When Driving Current 15 mA
Fig. 4 Temperature Dependence of Threshold Current
If you have any comments or request for detail product information, please fill the
Information Request Form or mail to: info@lasermate.com.
Return to Lasermate Corporation Home Page
Specifications of VCT-F85B20 VCSEL Diode
Specifications of CVT-A85A40 High Speed VCSEL Diode
Model No. VCT-A85A40
Features Picture
• Industry standard TO-46 package with cap lens.
• Optimized for fiber optical communication.
• Low dependence of electrical and optical characteristic over temperature.
• Symmetrical beam.
• High coupling efficiency to multi-mode fibers directly.
• Speed > 1 GHz.
ELECTRO-OPTICAL CHARACTERISTICS: (Tc=25ºC)
Parameter Symbol Min. Typ. Max. Unit Test Conditions(1)
Lasing Wavelength λp830 850 860 nm IF=12 mA(2)
Output Power Po 1 2 3 mW IF=12 mA
Threshold Current Ith 3 6 mA CW
Operating Current Iop 12 mA Adjustable to establish 1.5 mW
output power
Slope Efficiency η 0.25 mW/mA IF=12 mA(3)
Forward Voltage VF1.7 1.9 2.2 V IF=12 mA
Breakdown Voltage VBD 10 15 VIR=10 µA
Series Resistance Rs 30 ΩIF=12 mA
Beam Divergence θ 15 deg IF=12 mA(4)
Focal Length F 0.7 mm From the surface of lens
Notes:
1.All parameters except mentioned are measured in I F =12 mA, 25°C, CW.
2.Higher power can be provided under request.
3.Slope efficiency are defined as ∆P/(12-Ith ) at 25°C.
4.Beam divergence is defined as the light intensity Full Width at its Half Maxima (FWHM).
Specifications of VCT-A85A40 VCSEL Diode
THERMAL CHARACTERISTICS:
Parameter Symbol Min. Typ. Max. Unit Test Conditions
Thermal Resistance Rth 900 °C /W TA= 25 oC
Ith Temperature Variation ∆ Ith -1.0 +1.0 mA TA= 0 to 70 oC
VF Temperature Coefficient ∆VF/∆T -3.5 -2.5 -2.0 mV/°C TA= 0 to 70 oC, IF=12 mA
η Temperature Coefficient ∆η/∆T -0.15 %/oCTA= 0 to 70 oC, IF=12 mA
λp Temperature Coefficient ∆λp/∆T 0.06 nm/oCTA= 0 to 70 oC, IF=12 mA
ABSOLUTE MAXIMUM RATINGS:
Parameter Min. Max. Unit Test Conditions
Storage Temperature -40 125 °C
Operating Temperature -40 85 °C
Lead Solder Temperature 260 °C 10 seconds
Continuous Forward Current 40 mA
Continuous Reverse Voltage 10 V
OUTLINE DIMENSIONS:
Unit: mm●
Specifications of VCT-A85A40 VCSEL Diode
Specifications of VCT-A85A40 VCSEL Diode
Fig. 1 Typical Optical Characteristics Fig. 2 Typical Electrical Characteristics
Fig. 3 Spectrum When Driving Current 12 mA Fig. 4 Temperature Dependence of Threshold Current
Specifications of VCT-A85A40 VCSEL Diode
Specifications of VCT-A85A4X High Speed VCSEL Diode
Model No. VCT-A85A4X
Features Picture
• Industry standard TO-46 package with cap lens.
• Optimized for fiber optical communication.
• With attenuating coating and monitoring PD.
• Low dependence of electrical and optical characteristic over temperature.
• Symmetrical beam.
• High coupling efficiency to multi-mode fibers directly.
• Speed > 1 GHz.
ELECTRO-OPTICAL CHARACTERISTICS: (Tc=25ºC)
Parameter Symbol Min. Typ. Max. Unit Test Conditions(1)
Lasing Wavelength λp830 850 860 nm IF=12 mA(2)
Output Power Po 1 2 3 mW IF=12 mA
Threshold Current Ith 3 6 mA CW
Operating Current Iop 12 mA Adjustable to establish 1.5 mW
output power
Slope Efficiency η 0.25 mW/mA IF=12 mA(3)
Forward Voltage VF1.7 1.9 2.2 V IF=12 mA
Breakdown Voltage VBD 10 15 VIR=10 µA
Series Resistance Rs 30 ΩIF=12 mA
Beam Divergence θ 16 deg IF=12 mA(4)
Monitor Current IM30 100 300 µAVR=5 V, Po = 1.5 mW
Focal Length F 0.7 mm From the surface of lens
Notes:
1.All parameters except mentioned are measured in I F =12 mA, 25°C, CW.
Specifications of VCT-A85A4X VCSEL Diode
2.Higher power can be provided under request.
3.Slope efficiency are defined as ∆P/(12-Ith ) at 25°C.
4.Beam divergence is defined as the light intensity Full Width at its Half Maxima (FWHM).
THERMAL CHARACTERISTICS:
Parameter Symbol Min. Typ. Max. Unit Test Conditions
Thermal Resistance Rth 900 °C /W TA= 25 oC
Ith Temperature Variation ∆ Ith -1.0 +1.0 mA TA= 0 to 70 oC
VF Temperature Coefficient ∆VF/∆T -3.5 -2.5 -2.0 mV/°C TA= 0 to 70 oC, IF=12 mA
η Temperature Coefficient ∆η/∆T -0.15 %/oCTA= 0 to 70 oC, IF=12 mA
λp Temperature Coefficient ∆λp/∆T 0.06 nm/oCTA= 0 to 70 oC, IF=12 mA
ABSOLUTE MAXIMUM RATINGS:
Parameter Min. Max. Unit Test Conditions
Storage Temperature -40 125 °C
Operating Temperature -40 85 °C
Lead Solder Temperature 260 °C 10 seconds
Continuous Forward Current 40 mA
Continuous Reverse Voltage 10 V
OUTLINE DIMENSIONS:
Unit: mm●
PINOUT:
VCT-A85A41 VCT-A85A42
Specifications of VCT-A85A4X VCSEL Diode
Specifications of VCT-A85A4X VCSEL Diode
Fig. 1 Typical Optical Characteristics Fig. 2 Typical Electrical Characteristics
Fig. 3 Spectrum When Driving Current 12 mA Fig. 4 Temperature Dependence of Threshold Current
Specifications of VCT-A85A4X VCSEL Diode
Specifications of VCT-F85A40 High Speed VCSEL Diode
Model No. VCT-F85A40
Features Picture
• Industry standard TO-46 package with flat window glass.
• Optimized for fiber optical communication.
• Low dependence of electrical and optical characteristic over temperature.
• Symmetrical beam.
• High coupling efficiency to multi-mode fibers.
• Speed > 1 GHz.
ELECTRO-OPTICAL CHARACTERISTICS: (Tc=25ºC)
Parameter Symbol Min. Typ. Max. Unit Test Conditions(1)
Lasing Wavelength λp830 850 860 nm IF=12 mA(2)
Output Power Po 1 2 3 mW IF=12 mA
Threshold Current Ith 3 6 mA CW
Operating Current Iop 12 mA Adjustable to establish 1.5 mW
output power
Slope Efficiency η 0.25 mW/mA IF=12 mA(3)
Forward Voltage VF1.7 1.9 2.2 V IF=12 mA
Breakdown Voltage VBD 10 15 VIR=10 µA
Series Resistance Rs 30 ΩIF=12 mA
Beam Divergence θ 8 deg IF=12 mA(4)
Notes:
1.All parameters except mentioned are measured in I F =12 mA, 25°C, CW.
2.Higher power can be provided under request.
3.Slope efficiency are defined as ∆P/(12-Ith ) at 25°C.
4.Beam divergence is defined as the light intensity Full Width at its Half Maxima (FWHM).
Specifications of VCT-F85A40 VCSEL Diode for Data Communication
THERMAL CHARACTERISTICS:
Parameter Symbol Min. Typ. Max. Unit Test Conditions
Thermal Resistance Rth 900 °C /W TA= 25 oC
Ith Temperature Variation ∆ Ith -1.0 +1.0 mA TA= 0 to 70 oC
VF Temperature Coefficient ∆VF/∆T -3.5 -2.5 -2.0 mV/°C TA= 0 to 70 oC, IF=12 mA
η Temperature Coefficient ∆η/∆T -0.15 %/oCTA= 0 to 70 oC, IF=12 mA
λp Temperature Coefficient ∆λp/∆T 0.06 nm/oCTA= 0 to 70 oC, IF=12 mA
ABSOLUTE MAXIMUM RATINGS:
Parameter Min. Max. Unit Test Conditions
Storage Temperature -40 125 °C
Operating Temperature -40 85 °C
Lead Solder Temperature 260 °C 10 seconds
Continuous Forward Current 40 mA
Continuous Reverse Voltage 10 V
OUTLINE DIMENSIONS:
Unit: mm●
Specifications of VCT-F85A40 VCSEL Diode for Data Communication
Specifications of VCT-F85A40 VCSEL Diode for Data Communication
Fig. 1 Typical Optical Characteristics
Fig. 2 Typical Electrical Characteristics
Specifications of VCT-F85A40 VCSEL Diode for Data Communication
Fig. 3 Spectrum When Driving Current 12 mA Fig. 4 Temperature Dependence of Threshold Current
If you have any comments or request for detail product information, please fill the
Information Request Form or mail to: info@lasermate.com.
Return to Lasermate Corporation Home Page
Specifications of VCT-F85A40 VCSEL Diode for Data Communication
Specifications of VCT-F85A4X High Speed VCSEL Diode
Model No. VCT-F85A4X
Features Picture
• Industry standard TO-46 package with flat window glass.
• Optimized for fiber optical communication.
• With attenuating coating and monitoring PD.
• Low dependence of electrical and optical characteristic over temperature.
• Symmetrical beam.
• High coupling efficiency to multi-mode fibers.
• Speed > 1 GHz.
ELECTRO-OPTICAL CHARACTERISTICS: (Tc=25ºC)
Parameter Symbol Min. Typ. Max. Unit Test Conditions(1)
Lasing Wavelength λp830 850 860 nm IF=12 mA(2)
Output Power Po 1 2 3 mW IF=12 mA
Threshold Current Ith 3 6 mA CW
Operating Current Iop 12 mA Adjustable to establish 1.5 mW
output power
Slope Efficiency η 0.25 mW/mA IF=12 mA(3)
Forward Voltage VF1.7 1.9 2.2 V IF=12 mA
Breakdown Voltage VBD 10 15 VIR=10 µA
Series Resistance Rs 30 ΩIF=12 mA
Beam Divergence θ 8 deg IF=12 mA(4)
Monitor Current IM50 100 300 µAVR=5 V, Po = 1.5 mW
Notes:
1.All parameters except mentioned are measured in I F =12 mA, 25°C, CW.
2.Higher power can be provided under request.
3.Slope efficiency are defined as ∆P/(12-Ith ) at 25°C.
Specifications of VCT-F85A4X VCSEL Diode with PD for Data Communication
4.Beam divergence is defined as the light intensity Full Width at its Half Maxima (FWHM).
THERMAL CHARACTERISTICS:
Parameter Symbol Min. Typ. Max. Unit Test Conditions
Thermal Resistance Rth 900 °C /W TA= 25 oC
Ith Temperature Variation ∆ Ith -1.0 +1.0 mA TA= 0 to 70 oC
VF Temperature Coefficient ∆VF/∆T -3.5 -2.5 -2.0 mV/°C TA= 0 to 70 oC, IF=12 mA
η Temperature Coefficient ∆η/∆T -0.15 %/oCTA= 0 to 70 oC, IF=12 mA
λp Temperature Coefficient ∆λp/∆T 0.06 nm/oCTA= 0 to 70 oC, IF=12 mA
ABSOLUTE MAXIMUM RATINGS:
Parameter Min. Max. Unit Test Conditions
Storage Temperature -40 125 °C
Operating Temperature -40 85 °C
Lead Solder Temperature 260 °C 10 seconds
Continuous Forward Current 40 mA
Continuous Reverse Voltage 10 V
OUTLINE DIMENSIONS:
Unit: mm●
PINOUT:
VCT-F85A41 VCT-F85A42
Specifications of VCT-F85A4X VCSEL Diode with PD for Data Communication
Specifications of VCT-F85A4X VCSEL Diode with PD for Data Communication
Fig. 1 Typical Optical Characteristics
Fig. 2 Typical Electrical Characteristics
Specifications of VCT-F85A4X VCSEL Diode with PD for Data Communication
Fig. 3 Spectrum When Driving Current 12 mA Fig. 4 Temperature Dependence of Threshold Current
If you have any comments or request for detail product information, please fill the
Information Request Form or mail to: info@lasermate.com.
Return to Lasermate Corporation Home Page
Specifications of VCT-F85A4X VCSEL Diode with PD for Data Communication
VCSELs | Communication Lasers | Photodiode Receivers | Fiber Optical Transceivers | Book Store | On Sale Items |
Green, Red, & Infrared Laser Diode Modules | Laser Diodes | Laser Accessories | Laser Products |
Electroluminescent Products |
General Information and Services
Manufacturer of O.E.M. and O.D.M. laser diode modules and products● Supplier of laser accessories● Marketing and consulting services●
LASERMATE CORPORATION manufactures green, red, & infrared laser diode modules & products, including
laser diode modules, diode pumped solid-state green laser, laser aimers, and laser pointers, as well as fiber
optic components & products, including pigtailed & receptacle communication laser diodes and VCSEL (or
Vertical Cavity Surface Emitting Laser) diodes as optical transmitters, connectorized photodiodes as optical
receivers, and integrated optical transmitters and receivers as fiber optical transceivers for data
communication. We also supply laser diodes, photodiode detectors, optics, diffractive optics, laser safety
goggles, and diode driver circuit boards.
Green, Red & Infrared Laser Diode Modules
Fiber Optic Components & Products
Green, Red & Infrared Laser Diode Modules:
We specialize in providing high quality and low cost laser diode modules for O.E.M. users and O.D.M customers.
We now have available visible red and invisible infrared laser diode modules with circular, elliptical, linear, and
cross hair beam profiles in variety of packages and configurations offering at very competitive prices. Our laser
modules are fully self-contained with laser diode, optics, and power supply. More than 100 types of O.E.M. laser
diode modules have been designed and manufactured for our customers. We would like to introduce to you five
types of O.E.M. laser diode modules to fulfill your needs.
General Information and Services
Red & Infrared laser diode modules
designed for the OEM, they are ideal for
a wide range of low power laser
applications such as positioning,
alignment, measurement, and robotics
control. To assure the quality, the
LT-series laser diode modules have
passed 24 hours burn-in test.
Diode pumped solid state green
lasers
are our new products. Green lasers with
532nm wavelength are available in terms of
green laser module and green laser system to
satisfy our customers' demands.
We provide laser modules with a wide range
of wavelength from 532nm (green) to
850nm (infrared), output power up to
250mW, great circuitry design, and
dimensions from 6mm diameter x 17mm
length to17mm diameter x 63mm length to
fulfill your needs. If our products do not
fulfill your needs, please let us know. We
are equipped to take the O.E.M. order to
fit your specific requirements.
Fiber Optic Components &
Products:
We provide fiber optic components & products, including pigtailed & receptacle 1310 nm & 1550 nm
communication laser diodes and 850 nm VCSEL (or Vertical Cavity Surface Emitting Laser) diodes as fiber
optical transmitters, connectorized photodiodes as optical receivers, and integrated optical transmitters and
receivers as fiber optical transceivers for 100 Mbps Fast Ethernet transceiver, 155 Mbps ATM transceiver, 622
Mbps ATM OC-12, 1.0625 Gbps Fiber Channel & 1.25 Gbps Gigabit Ethernet transceiver.
VCSEL (Vertical Cavity Surface Emitting Laser) (MTTF >1,100 years @ 25oC)
Connectorized (Pigtailed or Receptacle) Communication 1310nm & 1550 nm Laser Diodes
Connectorized 850nm VCSEL Diodes in FC, SC & ST Connectors
Connectorized GaAs & InGaAs PIN Photodiode Detectors
The 850nm VCSEL multimode SC & ST duplex fiber optical transceiver with 155 Mb/s and the industrial
standard 1 x 9 footprint is useful for short distance, up to 2 km, data communication applications. The
1310 nm and 1550 nm single mode SC, ST & FC duplex fiber laser optical transceivers from 155 Mb/s to
1.25Gb/s data rate and the industrial standard 1 x 9 footprint are useful for longer distance, up to 50 km
General Information and Services
transmission distance.
Fiber Optical Transceivers for Data Communication & Telecommunication
If you have any comments or request for detail product information, please fill the
Quotation & Information Request Form or mail to: info@lasermate.com.
HOME | PRODUCT LIST | ORDER FORM | QUO & INFO REQUEST |
General Information and Services
VCSELs | Communication Lasers | Photodiode Receivers | Fiber Optical Transceivers | Book Store | On Sale Items |
Green, Red, & Infrared Laser Diode Modules | Laser Diodes | Laser Accessories | Laser Products |
Electroluminescent Products |
Red & Infrared Laser Diode Modules
We specialize in manufacturing high quality
and low cost laser diode modules for O.E.M.
users. We now have available visible red and
invisible infared laser diode modules with
circular, elliptic, linear, and cross hair beam
profiles in variety of packages and
configurations offering at very competitive
prices. Our laser modules are fully
self-contained with laser diode, optics, and
power supply. More than 100 types of O.E.M.
laser diode modules have been designed and
manufactured for our customers. From general
sighting applications to OEM projects, we
absolutely meet your cost-performance
requirements.
We provide laser diode modules with
Wavelength: from 635 nm to 850 nm● Output power: up to 250 mW● Beam profile: circular, elliptic, linear
(45, 60 & 90 degree), and cross hair
●
Circuit design: APC, ACC, pulsed,
analog modulation, and TTL
modulation
●
Dimensions: from 6 (dia.) x 17 mm (L)
to 17 (dia.) x 63 mm (L)
●
MTTF: 10,000 hours for most Class II
and Class IIIa lasers
●
Prices: highly competitive●
to fulfill your needs. If our products do not fulfill your needs, please let us know. We are equipped to take
the O.E.M. order to fit your specific requirements.
Red & Infrared Laser Diode Modules
Models
We would like to introduce to you the following laser diode modules to fulfill your professional needs.
A: Circular and Elliptical Beam Laser Diode
Modules B: Line Generating Laser Diode Module
LT- series high performance laser diode module
LX- series high performance laser diode module
LJ-series prime laser diode module
LM-series compact laser diode module
PL-series minitural laser diode module
LT- series line generating laser diode module
LX- series line generating laser diode module
C: Cross Hair Generating Laser Diode Module D: Analog and TTL Modulatable Laser Diode
Modules
LM- series cross hair generating laser diode module
LT- series cross hair generating laser diode module
Analog modulatable LT- series laser modules
TTL modulatable LT- series laser modules
Analog Modulatable LJ- series laser modules
TTL Modulatable LJ- series laser modules
Quality
All LT- series laser diode modules have passed 24 hours burn-in test to assure their quality.
Applications
Designed for the OEM, our laser modules are ideal for a wide range of low power laser applications such as
positioning, alignment, measurement, bar code reader, and robotic control.
If you have any comments or request for detail product information, please fill the
Quotation & Information Request Form or mail to: info@lasermate.com.
HOME | PRODUCT LIST | ORDER FORM | QUO & INFO REQUEST |
Red & Infrared Laser Diode Modules
VCSELs | Communication Lasers | Photodiode Receivers | Fiber Optical Transceivers | Book Store | On Sale Items |
Green, Red, & Infrared Laser Diode Modules | Laser Diodes | Laser Accessories | Laser Products | Electroluminescent Products |
High Performance Laser Diode Modules - LT System
The LT laser
diode module
system is a
complete laser
diode system
designed for
OEM
applications with
adjustable output
power and beam
focusing
requirements. It
is designed as the
high quality and
performance
laser diode
module with
flexible and
adjustable
characteristics for
industrial heavy
duty users.
Designed for the
OEM, it is ideal
for a wide range
of low power
laser
applications,
especially in
continuous long
time usage such
as bar code
LT-Series Laser Diode Modules
reader,
measurement,
alignment, and
positioning.
Features
High
Performance
and Low Cost
●
Wide Range of
Wavelength
(635nm -
850nm) and
Output power
(0.9mW -
50mW)
●
Adjustable
Optical Output
Power and
Automatic
Power Control
●
Soft-start,
Short-circuit,
and
Reverse-polarity
Protections
●
Two High
Performance
Collimating
Lenses for Your
Choice
●
Adjustable
Focus
●
Super Fine
Pitch (0.25mm)
for Precision
Focusing
●
Standard
English
Dimension
(Dia. = 0.5 in.,
L = 2.0 in.)
●
Line Generating
Optics and
Compact Beam
Expander for
Options
●
Green LED
Indicator
●
LT-Series Laser Diode Modules
Please click the item of interest below for more information.
Specifications of LT- laser modules
Specifications of analog modulatable LT- laser modules
Specifications of TTL modulatable & variable power LT- laser modules
Accessory options for LT- laser modules
If you have any comments or request for detail product information, please fill the
Quotation & Information Request Form or mail to: info@lasermate.com.
HOME | PRODUCT LIST | ORDER FORM | QUO & INFO REQUEST |
LT-Series Laser Diode Modules
VCSEL (Vertical Cavity Surface Emitting
Laser)
Introduction
VCSEL, or Vertical Cavity Surface Emitting Laser, is semiconductor microlaser diode that emits light in
a cylindrical beam vertically from the surface of a fabricated wafer, and offers significant advantages
when compared to the edge-emitting lasers currently used in the majority of fiber optic communications
devices.
VCSELs can be fabricated efficiently on a 3-inch diameter wafer. Even more important, the ability to
manufacture these lasers using standard microelectronic fabrication method allows integration of
VCSELs on-board with other components without requiring pre-packaging. As an enabling technology,
VCSELs allow superior new systems and products to be created at a lower cost.
We provides VCSELs and GaAs, InGaAs and Silicon PIN photodiodes for applications in
fiber-optic communication and general industry. Generally we can deliver products of VCSEL
chip, diode, transmitter/receiver assembly, and transceiver module, in large volume or small
quantity for engineering purpose. We provide cost-effective products to customers for promoting
the price and quality competition of their products.
780nm & 850nm VCSEL Diodes
Receptacle VCSEL Diodes (or Prealigned VCSEL Transmitters)
VCSEL Transceiver Modules Fully Compatible with Brand Name's Transceivers
Advantages
Brief in VCSEL
VCSELs have high performance and low cost advantages.
The key features are:
1) The structure can be integrated in two-dimensional array configuration.
2) Low threshold currents enable high-density arrays.
3) Surface-normal emission and nearly identical to the photo detector geometry give easy alignment and
packaging.
4) Circular and low divergence output beams eliminate the need for corrective optics.
5) Passive versus active fiber alignment, combined with high fiber-coupling efficiency.
6) Low-cost potential because the devices are completed and tested at the wafer level.
7) Lower temperature-sensitivity compared to edge-emitting laser diodes.
8) High transmission speed with low power consumption.
VCSEL Diodes
Receptacle VCSEL Diodes (or Prealigned VCSEL Transmitters)
Applications
Our VCSELs are promising emitter for fiber data communication in the speed range of 100Mbs and
1Gbs. They enable high performance systems in Gigabit Ethernet, Fiber Channel, and ATM markets.
Through their integration with original equipment manufacturer's (OEM) systems design, our 850nm
VCSELs provide enhanced performance benefits to a variety of applications, such as local area
networks(LAN), telecommunication switches, optical storage and other optoelectronic systems.
We maintains close coordination with OEMs to assist in the design with VCSEL components and
sub-assemblies to develop new products and to meet customer¡¦s need.
VCSEL Diodes
Receptacle VCSEL Diodes (or Prealigned VCSEL Transmitters)
If you have any comments or request for detail product information, please fill the
Information Request Form or mail to: info@lasermate.com.
Brief in VCSEL
Prealigned 850 nm VCSEL transmitters:
Connectorized VCSEL Diodes in FC, SC & STTM*
Receptacles
Infrared 850 nm wavelength, circular laser beam, <6.0 mA low threshold current, highly stable to
temperature variation.
●
The prealigned, lensed package and industry standard STTM*, FC style connector or SC style
connector sleeve.
●
Allowing fiber connection directly or plug-in assembly to reduce manufacturing cost.● Suitable to high-speed data communication, LAN, ATM, fast ethernet, fiber channel application.● In compliance with Class I laser standard for the eye safety.●
* STTM is a trade mark registered by AT&T.
Please click the Model No. for the detail specifications.
MODEL NO. PACKAGE DESCRIPTION PICTURE
TST-M85A4X
Metallic ST connector with attenuating
coating &
monitoring PD for 100/155/622/1250
Mbps applications
TST-M85A40 Metallic ST connector for
100/155/622/1250 Mbps applications
TST-M85B205
&
TST-M85B206
Metallic ST connector with lead frame
pin out
for 10/100/155 Mbps applications
Receptacle VCSEL Diodes (or Prealigned VCSEL transmitters)
TST-P85A4X
Plastic ST connector with attenuating
coating &
monitoring PD for 100/155/622/1250
Mbps applications
TST-P85B205
&
TST-P85B206
Plastic ST connector with metal pin
out
for10/100/155 Mbps applications
TFC-M85A4X
Metallic FC connector with
attenuating coating &
monitoring PD for 100/155/622/1250
Mbps applications
TFC-M85A40 Metallic FC connector for
100/155/622/1250 Mbps applications
TFC-M85B205
&
TFC-M85B206
Metallic FC connector with lead frame
pin out
for10/100/155 Mbps applications
TSC-M85A4X
Mtallic SC connector with attenuating
coating &
monitoring PD for
100/155/622/1250Mbps applications
If you have any comments or request for detail product information, please fill the
Information Request Form or mail to: info@lasermate.com.
Return to Lasermate Corporation Home Page
Receptacle VCSEL Diodes (or Prealigned VCSEL transmitters)
Specifications of TST-M85A4X5 & TST-M85A4X6:
Pre-aligned 850 nm VCSEL in ST Connector
Features:
Industry standard connector of matallic ST-type receptacle.● Pre-aligned for multi-mode fiber communication.● High stability to temperature variation.● With attenuating coating and monitoring PD.● Two laser/photodiode polarities.● Solution of 100/155/622/1250 Mbps applications.● Alternative solution for LED transmitter.● In compliance with Class I laser standard for the eye safety.●
Electro-optical Characteristics:
PARAMETERS SYMBOL MIN TYP MAX UNIT TEST CONDITIONS(1)
Threshold Current Ith 3 6 mA
Operating Current Iop 12 mA Adjustable to establish Po
Power Coupled Power (50/125, 62.5/125µm MMF)(2) Po-10 -4 dBm IF =12 mA(3)
Slope Efficiency η0.1 mW/mA IF =12 mA(4)
Wavelength λp830 850 860 nm IF =12 mA
Spectral Width (RMS) ∆λ 0.85 nm IF =12 mA
Transverse Mode Number 2 3 4 IF =12 mA
Forward Voltage VF 1.7 1.9 2.3 V IF =12 mA
Breakdown Voltage VBD 10 15 V IR =10 µA
Series Resistance Rs30 ΩIF =12 mA
Monitor Current Im 30 100 300 µA VR = 5 V, Po = -4dBm
Rise/Fall Time (20%~80%) TR/TF130/200 ps TA = 25 °C, Extinction Ratio > 10 dB
Note:
1. All parameters except mentioned are measured in IF =12 mA, 25°C, CW.
2. TST-M85A4X5 is the product type for 50/125 µm MMF and TST-M85A4X6 is the product type for 62.5/125 µm MMF.
3. Specific power range, such as from 2 to -4 dBm and from -12 to -17 dBm, can be provided under request.
4. Slope efficiency is definded as∆P/(12-Ith) at 25 °C.
850nm VCSEL diode with monitoring photodiode in ST receptacle
Thermal Characteristics:
PARAMETERS SYMBOL MIN TYP MAX UNIT TEST CONDITIONS
Thermal Resistance Rth 900 °C/W TA = 25°C
Threshold Current Temperature Variation ∆Ιth -1 1 mA TA = 0 ~ 70°C
Forward Voltage Temperature Coefficient ∆VF /∆T -3.5 -2.5 -2.0 mV/°C TA = 0 ~ 70°C
Temperature Coefficient ∆η/∆T-0.15 %/°C TA = 0 ~ 70°C, IF=12 mA
Wavelength Temperature Coefficient ∆λp/∆T0.06 nm/°C TA = 0 ~ 70°C, IF=12 mA
Absolute Maximum Ratings:
PARAMETERS MIN MAX UNIT TEST CONDITIONS
Storage Temperature -40 100 °C
Operating Temperature -20 85 °C
Lead Solder Temperature 260 °C 10 seconds
Continuous Forward Current 40 mA
Continuous Reverse Voltage 10 V
OUTLINE DIMENSIONS:
Unit: mm●
PINOUT:
TST-M85A415 & TST-M85A416 TST-M85A425 & TST-M85A426
850nm VCSEL diode with monitoring photodiode in ST receptacle
850nm VCSEL diode with monitoring photodiode in ST receptacle
Fig. 1 Typical Optical Characteristics Fig. 2 Typical Electrical Characteristics
Fig. 3 Spectrum When Driving Current 12 mA Fig. 4 Temperature Dependence of Threshold Current
850nm VCSEL diode with monitoring photodiode in ST receptacle
Specifications of TST-M85A405 & TST-M85A406:
Pre-aligned 850 nm VCSEL in ST Connector
Features:
Industry standard connector of matallic ST-type receptacle.● Pre-aligned for multi-mode fiber communication.● High stability to temperature variation.● Solution of 100/155/622/1250 Mbps applications.● Alternative solution for LED transmitter.● In compliance with Class I laser standard for the eye safety.●
Electro-optical Characteristics:
PARAMETERS SYMBOL MIN TYP MAX UNIT TEST CONDITIONS(1)
Threshold Current Ith 3 6 mA
Operating Current Iop 12 mA Adjustable to establish Po
Power Coupled Power (50/125, 62.5/125µm MMF)(2) Po-10 -4 dBm IF =12 mA(3)
Slope Efficiency η0.1 mW/mA IF =12 mA(4)
Wavelength λp830 850 860 nm IF =12 mA
Spectral Width (RMS) ∆λ 0.85 nm IF =12 mA
Transverse Mode Number 2 3 4 IF =12 mA
Forward Voltage VF 1.7 1.9 2.3 V IF =12 mA
Breakdown Voltage VBD 10 15 V IR =10 µA
Series Resistance Rs30 ΩIF =12 mA
Rise/Fall Time (20%~80%) TR/TF130/200 ps TA = 25 °C, Extinction Ratio > 10 dB
Note:
1. All parameters except mentioned are measured in IF =12 mA, 25°C, CW.
2. TST-M85A405 is the product type for 50/125 µm MMF and TST-M85A406 is the product type for 62.5/125 µm MMF.
3. Specific power range, such as from 2 to -4 dBm and from -12 to -17 dBm, can be provided under request.
4. Slope efficiency is definded as∆P/(12-Ith) at 25 °C.
Thermal Characteristics:
PARAMETERS SYMBOL MIN TYP MAX UNIT TEST CONDITIONS
Thermal Resistance Rth 900 °C/W TA = 25°C
Threshold Current Temperature Variation ∆Ιth -1 1 mA TA = 0 ~ 70°C
850nm VCSEL diode in ST receptacle
Forward Voltage Temperature Coefficient ∆VF /∆T -3.5 -2.5 -2.0 mV/°C TA = 0 ~ 70°C
Temperature Coefficient ∆η/∆T-0.15 %/°C TA = 0 ~ 70°C, IF=12 mA
Wavelength Temperature Coefficient ∆λp/∆T0.06 nm/°C TA = 0 ~ 70°C, IF=12 mA
Absolute Maximum Ratings:
PARAMETERS MIN MAX UNIT TEST CONDITIONS
Storage Temperature -40 100 °C
Operating Temperature -20 85 °C
Lead Solder Temperature 260 °C 10 seconds
Continuous Forward Current 40 mA
Continuous Reverse Voltage 10 V
OUTLINE DIMENSIONS:
Unit: mm●
PINOUT:
TST-M85A405 &
TST-M85A406
Pin 1. Anode
Pin 2. NC
Pin 3. Cathode
Pin 4. Case
850nm VCSEL diode in ST receptacle
Fig. 1 Typical Optical Characteristics Fig. 2 Typical Electrical Characteristics
850nm VCSEL diode in ST receptacle
Fig. 3 Spectrum When Driving Current 12 mA Fig. 4 Temperature Dependence of Threshold Current
If you have any comments or request for detail product information, please fill the
Information Request Form or mail to: info@lasermate.com.
Return to Lasermate Corporation Home Page
850nm VCSEL diode in ST receptacle
Specifications of TST-M85B205 & TST-M85B206:
Pre-aligned 850 nm VCSEL in ST Connector
Features:
Industry standard connector of matallic ST-type receptacle.● Pre-aligned for multi-mode fiber communication.● Copper leadframe, low dependence of thermal variation.● Solution of 10/100/155 Mbps applications.● LED transmitter alternative.● In compliance with Class I laser standard for the eye safety.●
Electro-optical Characteristics:
PARAMETERS SYMBOL MIN TYP MAX UNIT TEST CONDITIONS(1)
Threshold Current Ith 3 6 mA
Operating Current Iop 12 mA Adjustable to establish Po
Power Coupled Power (50/125,
62.5/125µm MMF)(2) Po-15 -10 dBm IF =12 mA(3)
Slope Efficiency η0.1 mW/mA IF =12 mA(4)
Wavelength λp830 850 860 nm IF =12 mA
Spectral Width (RMS) ∆λ 0.85 nm IF =12 mA
Transverse Mode Number 2 3 4 IF =12 mA
Forward Voltage VF 1.7 1.9 2.3 V IF =12 mA
Breakdown Voltage VBD 10 15 V IR =10 µA
Series Resistance Rs40 ΩIF =12 mA
Rise/Fall Time (20%~80%) TR/TF200/300 ps TA = 25 °C, Extinction Ratio > 10
dB
Note:
1. All parameters except mentioned are measured in IF =12 mA, 25°C, CW.
2. TST-M85B205 is the product type for 50/125 µm MMF and TST-M85B206 is the product type for
62.5/125 µm MMF.
3. Specific power range, such as from 0 to -4 dBm and from -4 to -10 dBm, can be provided under
request.
4. Slope efficiency is definded as∆P/(12-Ith) at 25 °C.
850 nm VCSEL in metal ST receptacle
Thermal Characteristics:
PARAMETERS SYMBOL MIN TYP MAX UNIT TEST CONDITIONS
Thermal Resistance Rth 900 °C/W TA = 25°C
Threshold Current Temperature Variation ∆Ιth -1.5 1.5 mA TA = 0 ~ 70°C
Forward Voltage Temperature Coefficient ∆VF /∆T -3.0 -3.5 mV/°C TA = 0 ~ 70°C
Temperature Coefficient ∆η/∆T-0.25 %/°C TA = 0 ~ 70°C, IF=12 mA
Wavelength Temperature Coefficient ∆λp/∆T0.07 nm/°C TA = 0 ~ 70°C, IF=12 mA
Absolute Maximum Ratings:
PARAMETERS MIN MAX UNIT CONDITIONS
Storage Temperature -40 100 °C
Operating Temperature -20 70 °C
Lead Solder Temperature 260 °C 5 seconds
Continuous Forward Current 40 mA
Continuous Reverse Voltage 10 V
OUTLINE DIMENSIONS:
Unit: mm●
850 nm VCSEL in metal ST receptacle
Fig. 1 Typical Optical Characteristics
850 nm VCSEL in metal ST receptacle
Fig. 2 Typical Electrical Characteristics
850 nm VCSEL in metal ST receptacle
Fig. 3 Spectrum When Driving Current 12 mA
Fig. 4 Temperature Dependence of Threshold Current
850 nm VCSEL in metal ST receptacle
Specifications of TST-P85A4X5 & TST-P85A4X6:
Pre-aligned 850 nm VCSEL in ST Connector
Features:
Industry standard connector of plastic ST-type receptacle.● Pre-aligned for multi-mode fiber communication.● High stability to temperature variation.● With attenuating coating and monitoring PD.● Three laser/photodiode polarities.● Solution of 100/155/622/1250 Mbps applications.● Alternative solution for LED transmitter.● In compliance with Class I laser standard for the eye safety.●
Electro-optical Characteristics:
PARAMETERS SYMBOL MIN TYP MAX UNIT TEST CONDITIONS(1)
Threshold Current Ith 3 6 mA
Operating Current Iop 12 mA Adjustable to establish Po
Power Coupled Power (50/125, 62.5/125µm MMF)(2) Po-9.5 -4 dBm IF =12 mA(3)
Slope Efficiency η0.1 mW/mA IF =12 mA(4)
Wavelength λp830 850 860 nm IF =12 mA
Spectral Width (RMS) ∆λ 0.85 nm IF =12 mA
Transverse Mode Number 2 3 4 IF =12 mA
Forward Voltage VF 1.7 1.9 2.2 V IF =12 mA
Breakdown Voltage VBD 10 15 V IR =10 µA
Series Resistance Rs30 ΩIF =12 mA
Monitor Current Im 30 100 300 µA VR = 5 V, Po = -4dBm
Rise/Fall Time (20%~80%) TR/TF130/230 ps TA = 25 °C, Extinction Ratio > 10 dB
Note:
1. All parameters except mentioned are measured in IF =12 mA, 25°C, CW.
2. TST-P85A4X5 is the product type for 50/125 µm MMF and TST-P85A4X6 is the product type for 62.5/125 µm MMF.
3. Specific power range, such as from 2 to -4 dBm and from -12 to -17 dBm, can be provided under request.
4. Slope efficiency is definded as∆P/(12-Ith) at 25 °C.
850nm VCSEL diode with monitoring photodiode in ST receptacle
Thermal Characteristics:
PARAMETERS SYMBOL MIN TYP MAX UNIT TEST CONDITIONS
Thermal Resistance Rth 900 °C/W TA = 25°C
Threshold Current Temperature Variation ∆Ιth -1 1 mA TA = 0 ~ 70°C
Forward Voltage Temperature Coefficient ∆VF /∆T -3.5 -2.5 -2.0 mV/°C TA = 0 ~ 70°C
Temperature Coefficient ∆η/∆T-0.15 %/°C TA = 0 ~ 70°C, IF=12 mA
Wavelength Temperature Coefficient ∆λp/∆T0.06 nm/°C TA = 0 ~ 70°C, IF=12 mA
Absolute Maximum Ratings:
PARAMETERS MIN MAX UNIT TEST CONDITIONS
Storage Temperature -40 100 °C
Operating Temperature -20 85 °C
Lead Solder Temperature 260 °C 10 seconds
Continuous Forward Current 40 mA
Continuous Reverse Voltage 10 V
OUTLINE DIMENSIONS:
Unit: mm●
PINOUT:
TST-P85A415 & TST-P85A416 TST-P85A425 & TST-P85A426
850nm VCSEL diode with monitoring photodiode in ST receptacle
850nm VCSEL diode with monitoring photodiode in ST receptacle
Fig. 1 Typical Optical Characteristics Fig. 2 Typical Electrical Characteristics
Fig. 3 Spectrum When Driving Current 12 mA Fig. 4 Temperature Dependence of Threshold Current
850nm VCSEL diode with monitoring photodiode in ST receptacle
Specifications of TST-P85B205 & TST-P85B206:
Pre-aligned 850 nm VCSEL in Plastic ST Connector
Features:
Industry standard connector of plastic ST * -type receptacle.● Pre-aligned for multi-mode fiber communication.● Copper leadframe, low dependence of thermal variation.● Solution of 10/100/155 Mbps applications.● Cost-effective LED transmitter alternative.● In compliance with Class I laser standard for the eye safety.●
Electro-optical Characteristics:
PARAMETERS SYMBOL MIN TYP MAX UNIT TEST CONDITIONS(1)
Threshold Current Ith 3 6 mA
Operating Current Iop 12 mA Adjustable to establish Po
Power Coupled Power (50/125,
62.5/125µm MMF)(2) Po-15 -10 dBm IF =12 mA(3)
Slope Efficiency η0.1 mW/mA IF =12 mA(4)
Wavelength λp820 850 870 nm IF =12 mA
Spectral Width (RMS) ∆λ 0.85 nm IF =12 mA
Transverse Mode Number 2 3 4 IF =12 mA
Forward Voltage VF 1.7 2.0 2.3 V IF =12 mA
Breakdown Voltage VBD 10 15 V IR =10 µA
Series Resistance Rs40 ΩIF =12 mA
Rise/Fall Time (10%~90%) TR/TF1 ns TA = 25 °C, Extinction Ratio > 10
dB
Note:
1. All parameters except mentioned are measured in IF =12 mA, 25°C, CW.
2. TST-P85B205 is the product type for 50/125 µm MMF and TST-P85B206 is the product type for
62.5/125 µm MMF.
3. Specific power range, such as from 0 to -4 dBm and from -4 to -10 dBm, can be provided under
request.
4. Slope efficiency is definded as∆P/(12-Ith) at 25 °C.
850 nm VCSEL in Plastic ST receptacle
Thermal Characteristics:
PARAMETERS SYMBOL MIN TYP MAX UNIT TEST CONDITIONS
Thermal Resistance Rth 900 °C/W TA = 25°C
Threshold Current Temperature Variation ∆Ιth -1.5 1.5 mA TA = 0 ~ 70°C
Forward Voltage Temperature Coefficient ∆VF /∆T -3.0 -3.5 mV/°C TA = 0 ~ 70°C
Temperature Coefficient ∆η/∆T-0.25 %/°C TA = 0 ~ 70°C, IF=12 mA
Wavelength Temperature Coefficient ∆λp/∆T0.07 nm/°C TA = 0 ~ 70°C, IF=12 mA
Absolute Maximum Ratings:
PARAMETERS MIN MAX UNIT CONDITIONS
Storage Temperature -40 100 °C
Operating Temperature -20 70 °C
Lead Solder Temperature 260 °C 10 seconds
Continuous Forward Current 40 mA
Continuous Reverse Voltage 10 V
OUTLINE DIMENSIONS:
Unit: mm●
850 nm VCSEL in Plastic ST receptacle
Fig. 1 Typical Optical Characteristics
850 nm VCSEL in Plastic ST receptacle
Fig. 2 Typical Electrical Characteristics
850 nm VCSEL in Plastic ST receptacle
Fig. 3 Spectrum When Driving Current 12 mA
Fig. 4 Temperature Dependence of Threshold Current
850 nm VCSEL in Plastic ST receptacle
Specifications of TFC-M85A4X5 & TFC-M85A4X6:
Pre-aligned 850 nm VCSEL in FC Connector
Features:
Industry standard connector of matallic FC-type receptacle.● Pre-aligned for multi-mode fiber communication.● High stability to temperature variation.● With attenuating coating and monitoring PD.● Three laser/photodiode polarities.● Solution of 100/155/622/1250 Mbps applications.● Alternative solution for LED transmitter.● In compliance with Class I laser standard for the eye safety.●
Electro-optical Characteristics:
PARAMETERS SYMBOL MIN TYP MAX UNIT TEST CONDITIONS(1)
Threshold Current Ith 3 6 mA
Operating Current Iop 12 mA Adjustable to establish Po
Power Coupled Power (50/125, 62.5/125µm MMF)(2) Po-9.5 -4 dBm IF =12 mA(3)
Slope Efficiency η0.1 mW/mA IF =12 mA(4)
Wavelength λp830 850 860 nm IF =12 mA
Spectral Width (RMS) ∆λ 0.85 nm IF =12 mA
Transverse Mode Number 2 3 IF =12 mA
Forward Voltage VF 1.7 1.9 2.2 V IF =12 mA
Breakdown Voltage VBD 10 15 V IR =10 µA
Series Resistance Rs30 ΩIF =12 mA
Monitor Current Im 30 100 300 µA VR = 5 V, Po = -4dBm
Rise/Fall Time (20%~80%) TR/TF 130/230 ps TA = 25 °C, Extinction Ratio > 10 dB
Note:
1. All parameters except mentioned are measured in IF =12 mA, 25°C, CW.
2. TFC-M85A4X5 is the product type for 50/125 µm MMF and TFC-M85A4X6 is the product type for 62.5/125 µm MMF.
3. Specific power range, such as from 2 to -4 dBm and from -12 to -17 dBm, can be provided under request.
4. Slope efficiency is definded as∆P/(12-Ith) at 25 °C.
850nm VCSEL diode with monitoring photodiode in FC receptacle
Thermal Characteristics:
PARAMETERS SYMBOL MIN TYP MAX UNIT TEST CONDITIONS
Thermal Resistance Rth 900 °C/W TA = 25°C
Threshold Current Temperature Variation ∆Ιth -1 1 mA TA = 0 ~ 70°C
Forward Voltage Temperature Coefficient ∆VF /∆T -3.5 -2.5 -2.0 mV/°C TA = 0 ~ 70°C
Temperature Coefficient ∆η/∆T-0.15 %/°C TA = 0 ~ 70°C, IF=12 mA
Wavelength Temperature Coefficient ∆λp/∆T0.06 nm/°C TA = 0 ~ 70°C, IF=12 mA
Absolute Maximum Ratings:
PARAMETERS MIN MAX UNIT TEST CONDITIONS
Storage Temperature -40 100 °C
Operating Temperature -20 85 °C
Lead Solder Temperature 260 °C 10 seconds
Continuous Forward Current 40 mA
Continuous Reverse Voltage 10 V
OUTLINE DIMENSIONS:
Unit: mm●
PINOUT:
TFC-M85A415 & TFC-M85A416 TFC-M85A425 & TFC-M85A426
850nm VCSEL diode with monitoring photodiode in FC receptacle
850nm VCSEL diode with monitoring photodiode in FC receptacle
Fig. 1 Typical Optical Characteristics Fig. 2 Typical Electrical Characteristics
Fig. 3 Spectrum When Driving Current 12 mA Fig. 4 Temperature Dependence of Threshold Current
850nm VCSEL diode with monitoring photodiode in FC receptacle
Specifications of TFC-M85A405 & TFC-M85A406:
Pre-aligned 850 nm VCSEL in FC Connector
Features:
Industry standard connector of matallic FC-type receptacle.● Pre-aligned for multi-mode fiber communication.● High stability to temperature variation.● Solution of 100/155/622/1250 Mbps applications.● Alternative solution for LED transmitter.● In compliance with Class I laser standard for the eye safety.●
Electro-optical Characteristics:
PARAMETERS SYMBOL MIN TYP MAX UNIT TEST CONDITIONS(1)
Threshold Current Ith 3 6 mA
Operating Current Iop 12 mA Adjustable to establish Po
Power Coupled Power (50/125, 62.5/125µm MMF)(2) Po-9.5 -4 dBm IF =12 mA(3)
Slope Efficiency η0.1 mW/mA IF =12 mA(4)
Wavelength λp830 850 860 nm IF =12 mA
Spectral Width (RMS) ∆λ 0.85 nm IF =12 mA
Transverse Mode Number 2 3 IF =12 mA
Forward Voltage VF 1.7 1.9 2.2 V IF =12 mA
Breakdown Voltage VBD 10 15 V IR =10 µA
Series Resistance Rs30 ΩIF =12 mA
Rise/Fall Time (20%~80%) TR/TF 130/230 ps TA = 25 °C, Extinction Ratio > 10 dB
Note:
1. All parameters except mentioned are measured in IF =12 mA, 25°C, CW.
2. TFC-M85A405 is the product type for 50/125 µm MMF and TFC-M85A406 is the product type for 62.5/125 µm MMF.
3. Specific power range, such as from 2 to -4 dBm and from -12 to -17 dBm, can be provided under request.
4. Slope efficiency is definded as∆P/(12-Ith) at 25 °C.
Thermal Characteristics:
PARAMETERS SYMBOL MIN TYP MAX UNIT TEST CONDITIONS
Thermal Resistance Rth 900 °C/W TA = 25°C
Threshold Current Temperature Variation ∆Ιth -1 1 mA TA = 0 ~ 70°C
850nm VCSEL diode in FC receptacle
Forward Voltage Temperature Coefficient ∆VF /∆T -3.5 -2.5 -2.0 mV/°C TA = 0 ~ 70°C
Temperature Coefficient ∆η/∆T-0.15 %/°C TA = 0 ~ 70°C, IF=12 mA
Wavelength Temperature Coefficient ∆λp/∆T0.06 nm/°C TA = 0 ~ 70°C, IF=12 mA
Absolute Maximum Ratings:
PARAMETERS MIN MAX UNIT TEST CONDITIONS
Storage Temperature -40 100 °C
Operating Temperature -20 85 °C
Lead Solder Temperature 260 °C 10 seconds
Continuous Forward Current 40 mA
Continuous Reverse Voltage 10 V
OUTLINE DIMENSIONS:
Unit: mm●
PINOUT:
TFC-M85A405 &
TFC-M85A406
Pin 1. Anode
Pin 2. NC
Pin 3. Cathode
Pin 4. Case
850nm VCSEL diode in FC receptacle
850nm VCSEL diode in FC receptacle
Fig. 1 Typical Optical Characteristics Fig. 2 Typical Electrical Characteristics
Fig. 3 Spectrum When Driving Current 12 mA Fig. 4 Temperature Dependence of Threshold Current
850nm VCSEL diode in FC receptacle
Specifications of TFC-M85B205 & TFC-M85B206:
Pre-aligned 850 nm VCSEL in FC Connector
Features:
Industry standard connector of matallic FC-type receptacle.● Pre-aligned for multi-mode fiber communication.● Copper leadframe, low dependence of thermal variation.● Solution of 10/100/155 Mbps applications.● Cost-effective LED transmitter alternative.● In compliance with Class I laser standard for the eye safety.●
Electro-optical Characteristics:
PARAMETERS SYMBOL MIN TYP MAX UNIT TEST CONDITIONS(1)
Threshold Current Ith 3 6 mA
Operating Current Iop 12 mA Adjustable to establish Po
Power Coupled Power (50/125,
62.5/125µm MMF)(2) Po-15 -10 dBm IF =12 mA(3)
Slope Efficiency η0.1 mW/mA IF =12 mA(4)
Wavelength λp830 850 860 nm IF =12 mA
Spectral Width (RMS) ∆λ 0.85 nm IF =12 mA
Transverse Mode Number 2 3 4 IF =12 mA
Forward Voltage VF 1.7 1.9 2.3 V IF =12 mA
Breakdown Voltage VBD 10 15 V IR =10 µA
Series Resistance Rs40 ΩIF =12 mA
Rise/Fall Time (20%~80%) TR/TF1 ns TA = 25 °C, Extinction Ratio > 10
dB
Note:
1. All parameters except mentioned are measured in IF =12 mA, 25°C, CW.
2. TFC-M85B205 is the product type for 50/125 µm MMF and TFC-M85B206 is the product type for
62.5/125 µm MMF.
3. Specific power range, such as from 0 to -4 dBm and from -4 to -10 dBm, can be provided under
request.
4. Slope efficiency is definded as∆P/(12-Ith) at 25 °C.
850 nm VCSEL in FC receptacle
Thermal Characteristics:
PARAMETERS SYMBOL MIN TYP MAX UNIT TEST CONDITIONS
Thermal Resistance Rth 900 °C/W TA = 25°C
Threshold Current Temperature Variation ∆Ιth -1.5 1.5 mA TA = 0 ~ 70°C
Forward Voltage Temperature Coefficient ∆VF /∆T -3.0 -3.5 mV/°C TA = 0 ~ 70°C
Temperature Coefficient ∆η/∆T-0.25 %/°C TA = 0 ~ 70°C, IF=12 mA
Wavelength Temperature Coefficient ∆λp/∆T0.07 nm/°C TA = 0 ~ 70°C, IF=12 mA
Absolute Maximum Ratings:
PARAMETERS MIN MAX UNIT CONDITIONS
Storage Temperature -40 100 °C
Operating Temperature -20 70 °C
Lead Solder Temperature 260 °C 10 seconds
Continuous Forward Current 40 mA
Continuous Reverse Voltage 10 V
OUTLINE DIMENSIONS:
Unit: mm●
850 nm VCSEL in FC receptacle
Fig. 1 Typical Optical Characteristics
850 nm VCSEL in FC receptacle
Fig. 2 Typical Electrical Characteristics
850 nm VCSEL in FC receptacle
Fig. 3 Spectrum When Driving Current 12 mA
Fig. 4 Temperature Dependence of Threshold Current
850 nm VCSEL in FC receptacle
Specifications of TSC-M85A4X5 & TSC-M85A4X6:
Pre-aligned 850 nm VCSEL in SC Connector
Features:
Industry standard connector of matallic SC-type receptacle.● Pre-aligned for multi-mode fiber communication.● High stability to temperature variation.● With attenuating coating and monitoring PD.● Three laser/photodiode polarities.● Solution of 100/155/622/1250 Mbps applications.● Alternative solution for LED transmitter.● In compliance with Class I laser standard for the eye safety.●
Electro-optical Characteristics:
PARAMETERS SYMBOL MIN TYP MAX UNIT TEST CONDITIONS(1)
Threshold Current Ith 3 6 mA
Operating Current Iop 12 mA Adjustable to establish Po
Power Coupled Power (50/125, 62.5/125µm MMF)(2) Po-9.5 -4 dBm IF =12 mA(3)
Slope Efficiency η0.1 mW/mA IF =12 mA(4)
Wavelength λp830 850 860 nm IF =12 mA
Spectral Width (RMS) ∆λ 0.85 nm IF =12 mA
Transverse Mode Number 2 3 IF =12 mA
Forward Voltage VF 1.7 1.9 2.2 V IF =12 mA
Breakdown Voltage VBD 10 15 V IR =10 µA
Series Resistance Rs40 ΩIF =12 mA
Monitor Current Im 30 100 300 µA VR = 5 V, Po = -4dBm
Rise/Fall Time (20%~80%) TR/TF 130/230 ps TA = 25 °C, Extinction Ratio > 10 dB
Note:
1. All parameters except mentioned are measured in IF =12 mA, 25°C, CW.
2. TSC-M85A4X5 is the product type for 50/125 µm MMF and TSC-M85A4X6 is the product type for 62.5/125 µm MMF.
3. Specific power range, such as from 2 to -4 dBm and from -12 to -17 dBm, can be provided under request.
4. Slope efficiency is definded as∆P/(12-Ith) at 25 °C.
850nm VCSEL diode with monitoring photodiode in SC receptacle
Thermal Characteristics:
PARAMETERS SYMBOL MIN TYP MAX UNIT TEST CONDITIONS
Thermal Resistance Rth 900 °C/W TA = 25°C
Threshold Current Temperature Variation ∆Ιth -1 1 mA TA = 0 ~ 70°C
Forward Voltage Temperature Coefficient ∆VF /∆T -3.5 -2.5 mV/°C TA = 0 ~ 70°C
Temperature Coefficient ∆η/∆T-0.15 %/°C TA = 0 ~ 70°C, IF=12 mA
Wavelength Temperature Coefficient ∆λp/∆T0.06 nm/°C TA = 0 ~ 70°C, IF=12 mA
Absolute Maximum Ratings:
PARAMETERS MIN MAX UNIT TEST CONDITIONS
Storage Temperature -40 100 °C
Operating Temperature -20 85 °C
Lead Solder Temperature 260 °C 10 seconds
Continuous Forward Current 40 mA
Continuous Reverse Voltage 10 V
OUTLINE DIMENSIONS:
Unit: mm●
PINOUT:
TSC-M85A415 & TSC-M85A416 TSC-M85A425 & TSC-M85A426
850nm VCSEL diode with monitoring photodiode in SC receptacle
850nm VCSEL diode with monitoring photodiode in SC receptacle
Fig. 1 Typical Optical Characteristics Fig. 2 Typical Electrical Characteristics
Fig. 3 Spectrum When Driving Current 12 mA Fig. 4 Temperature Dependence of Threshold Current
850nm VCSEL diode with monitoring photodiode in SC receptacle
VCSELs | Communication Lasers | Photodiode Receivers | Fiber Optical Transceivers | Book Store | On Sale Items |
Green, Red, & Infrared Laser Diode Modules | Laser Diodes | Laser Accessories | Laser Products | Electroluminescent Products |
High Performance & Low Cost Short Wavelength 850nm VCSEL Transceivers
from 100 Mbps Fast Ethernet to 1.25 Gbps Gigabit Ethernet
Fully compatible with brand name's transceivers.● Using 850 nm VCSEL transmitter & GaAsPIN or InGaAs PIN receiver.● Single +5V power supply.● Industry standard 1 x 9 package footprint.● Duplex SC and ST connectors● In compliance with Class I laser standard for the eye safety.● High performance and low cost.● Suitable to high-speed data communications such as Fast Ethernet, LAN, ATM, Fiber
Channel, Gigabit Ethernet applications.
●
100 Mbps Fast Ethernet Transceiver 155 Mbps ATM Multimode Fiber Transceiver
1.062 Gbps Fiber Channel Transceiver 1.25 Gbps Gigabit Ethernet Transceiver
Please click the Model No. for the detail specifications.
MODEL NO. DESCRIPTION COMPATIBLE TO
C85-100MC1A
Only $59.00
for one
100 Mbps Fast Ethernet Transceiver
Fully compatible with 1300 nm optical links and
brand name's transceivers.
●
50 % power saving than LED transceivers. ●
Consisting of 850 nm VCSEL transmitter & 1300
nm InGaAs PIN receiver.
●
Full compliance with the IEEE 802.3 standard. ●
Single +5V power supply. ●
Industry standard 1 x 9 package footprint. ●
Duplex SC connector. ●
Driving up to 2 km link distance for multimode
optical fiber.
●
High performance and low cost. ●
Hewlett-Packer: HFBR-5103
AMP: 269040-1
269081-1
SUMITOMO: SDM4201
High Performance & Low Cost Short Wavelength VCSEL Transceiver
C85-100MC8A
100 Mbps Fast Ethernet Transceiver
Fully compatible with 850 nm optical links and
brand name's transceivers.
●
50 % power saving than LED transceivers. ●
Consisting of 850 nm VCSEL transmitter & 850
nm GaAs PIN receiver.
●
Full compliance with the IEEE 802.3 standard. ●
Single +5V power supply. ●
Industry standard 1 x 9 package footprint. ●
Duplex SC connector. ●
Driving up to 2 km link distance for multimode
optical fiber.
●
High performance and low cost. ●
C85-155MC1A
Only $59.00
for one
155 Mbps ATM Multimode Fiber Transceiver
Fully compatible with 1300 nm optical links and
brand name's transceivers.
●
50 % power saving than LED transceivers. ●
Consisting of 850 nm VCSEL transmitter & 1300
nm InGaAs PIN receiver.
●
Full compliance with the IEEE 802.3 standard. ●
Single +5V power supply. ●
Industry standard 1 x 9 package footprint. ●
Duplex SC connector. ●
Driving up to 2 km for multimode optical fiber. ●
High performance and low cost. ●
Hewlett-Packer: HFBR-5205
SUMITOMO: SDM4201
C85-155MC8A
155 Mbps ATM Multimode Fiber Transceiver
Fully compatible with 850 nm optical links and
brand name's transceivers.
●
50 % power saving than LED transceivers. ●
Consisting of 850 nm VCSEL transmitter & 850
nm GaAs PIN receiver.
●
Full compliance with the IEEE 802.3 standard. ●
Single +5V power supply. ●
Industry standard 1 x 9 package footprint. ●
Duplex SC connector. ●
Driving up to 2 km link distance for multimode
optical fiber.
●
High performance and low cost. ●
High Performance & Low Cost Short Wavelength VCSEL Transceiver
C85-125GC8A
1.062 Gbps Fiber Channel Transceiver
Fully compatible with 850 nm optical links. ●
Consisting of 850 nm VCSEL transmitter & 850
nm GaAs PIN receiver.
●
Single +5V power supply. ●
Industry standard 1 x 9 package footprint. ●
Duplex SC connector. ●
Driving up to 500 m for multimode optical fiber.●
High performance and low cost. ●
C85-125GC8A
1.25 Gbps Gigabit Ethernet Transceiver
Fully compatible with 850 nm optical links. ●
Consisting of 850 nm VCSEL transmitter & 850
nm GaAs PIN receiver.
●
Single +5V power supply. ●
Industry standard 1 x 9 package footprint. ●
Duplex SC connector. ●
220m & 500m link distance for 62.5/125 & 50/125
mm MMF, respectively.
●
High performance and low cost. ●
If you have any comments or request for detail product information, please fill the
Quotation & Information Request Form or mail to: info@lasermate.com.
Please update our new address/phone numbers!
Lasermate Corporation
20264 E. Carrey Road, Walnut, CA 91789, USA Tel: (909) 718-0999 Fax: (909)718-0998
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High Performance & Low Cost Short Wavelength VCSEL Transceiver
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C85-100M-C1A
High Performance & Low Cost 100Mbps Fast Ethernet Multimode Fiber Transceiver
Using 850nm VCSEL Transmitter & 1300 nm InGaAs PIN receiver
for FDDI, 100 Mbps ATM, and Fast Ethernet Transceivers in Low Cost 1x9 Package Style
FEATURES
Fully compatible with 1300 nm optical links and various brand name's
transceivers.
●
50 % power saving than LED transceivers. ●
Consisting of 850 nm VCSEL transmitter & 1300 nm InGaAs PIN
receiver.
●
Full compliance with the IEEE 802.3 standard. ●
Single +5V power supply. ●
Industry standard 1 x 9 package footprint. ●
Duplex SC connector. ●
Class I Laser Safe per FDA and IEC ●
2 km link distance for multimode optical fiber. ●
High performance and low cost. ●
DESCRIPTION
The C85-100M-C1A fast ethernet transceiver from Lasermate is a 100Mbps/125MBd fiber optic transceiver module in the new
industry standard 1x 9 SIP package style with a duplex SC connector interface. This transceiver is designed to meet the standard
2,000 m distance requirement. It provides a low cost solution to the requirements of Fast Ethernet interconnects. It is a class I laser
product compliant with FDA Radiation Performance Standards, 21 CFR Subchapter J, as well as International Safety Standard
IEC-825-1. Typical applications include: LANs (Local Area Networks), clustered workstation links, and connections to mass storage
devices.
The C85-100M-C1A transceiver has an independent Transmitter (TX) and Receiver (RX). The transmitter consists of a high reliability
850nm VCSEL (Vertical Cavity Serface Emitting Laser) diode which couples to a fiber optic cable through an SC connector. The TX
is driven with a differential PECL (Positive Emitter Coupled Logic) signal applied to TX In+ and TX In-. The maximum optical power
meets the class I laser safety standard per FDA and IEC. The reciever consists of a high performance 1300 nm InGaAs PIN
photodiode detector. Optical input is coupled to the receiver with either a 50/125 or a 62.5/125 micron fiber through an SC connector.
APPLICATIONS:
FDDI / Fast Ethernet●
ATM●
Transmitter Electro-optical Characteristics:
PARAMETERS SYMBOL MIN TYP MAX UNIT
Wavelength λp830 850 860 nm
Optical Output Power (1) Po -19 -14 dBm
Supply Current Icc 35 45 mA
C85100MC1A
Power Dissipation PDISS 0.175 W
Supply Voltage Vcc 4.75 5.25 V
Data Input Voltage - Low(2) VIL -VCC -1.810 -1.475 V
Data Input Voltage - High(2) VIH - VCC -1.165 -0.880 V
Optical Rise Time TR 0.6 3 ns
Optical Fall Time TF 0.8 3 ns
Duty Cycle Distortion DCD 0.6 ns p-p
Systematic Jitter SJ 0.6 ns p-p
Random Jitter RJ 0.20 0.69 ns p-p
(1) The launch power is detected by an InGaAs PIN photodiode calibrated at 1300 nm, and the maximum optical power meets the
class I laser safety standard.
(2) Voltage levels listed are compatible with 100K Series PECL logic levels. The parts are compatible with 10K and 10KH Series
logic when driven with differential signals.
Receiver Electro-optical Characteristics:
PARAMETERS SYMBOL MIN TYP MAX UNIT
Supply Current Icc 55 mA
Power Dissipation PDISS 0.275 W
Supply Voltage Vcc 4.75 5.25 V
Data Output Voltage - Low (1) VOL - VCC -1.810 -1.475 V
Data Output Voltage - High (1) VOH - VCC -1.165 -0.880 V
Signal Detect output Voltage - Low VOL - VCC -1.810 -1.475 V
Signal Detect output Voltage - High VOH - VCC -1.165 -0.880 V
Rise Time TR 1.3 2.2 ns
Fall Time TF 1.3 2.2 ns
Duty Cycle Distortion DCD 0.4 ns p-p
Systematic Jitter SJ 1.0 ns p-p
Random Jitter RJ 2.14 ns p-p
Sensitivity -33 -30 dBm
Operating Wavelength λ 1270 1380 nm
Power Level (avg.) Detect Assert PA -33 dBm
Power Level (avg.) Detect Deassert PD -45 dBm
Level detect hysteresis PA - PD 1.75 2.25 2.75 dB
Signal Detect Assert Time 100 µs
Signal Detect Deassert Time 350 µs
(1) Voltage levels listed are compatible with 100K Series PECL logic levels. The parts are compatible with 10K and 10KH Series logic when driven with differential signals.
Absolute Maximum Ratings:
Parameter Symbol Min. Max. Unit
Storage Temperature Ts -40 100 oC
Operating Temperature To0 70 oC
Lead Solder Temperature 260/10 oC /sec
Supply Voltage VCC -0.5 7 V
OUTLINE DIMENSIONS:
C85100MC1A
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Green,Red, & Infrared Laser Diode Modules | LaserDiodes | LaserAccessories| LaserProducts | ElectroluminescentProducts |
C85-100M-C8A
High Performance & Low Cost 100Mbps Fast Ethernet Multimode FiberTransceiver
Using 850nm VCSEL Transmitter & 850 nm GaAs PINreceiver
for FDDI, 100 Mbps ATM, and Fast Ethernet Transceivers in Low Cost 1x9 Package Style
FEATURES
Fully compatible with 850 nm optical links and various brandname's
transceivers.
●
50 % power saving than LED transceivers. ●
Consisting of 850 nm VCSEL transmitter & 850 nm GaAsPIN receiver. ●
Full compliance with the IEEE 802.3 standard. ●
Single +5V power supply. ●
Industry standard 1 x 9 package footprint. ●
Duplex SC connector. ●
Class I Laser Safe per FDA and IEC ●
C85-100M-C8A operating to 2 km for multimode optical fiber. ●
High performance and low cost. ●
DESCRIPTION
The C85-100M-C8A fast ethernet transceiverfrom Lasermate is a 100Mbps/125MBd fiber optic transceiver module in thenew industry standard
1x9 SIP package style with a duplex SC connector interface. The C85-100M-C8A transceiversare designed to meet the standard 2,000 m
distance requirement. This provides a low cost solution to the requirementsof Fast Ethernet interconnects. They are class I laser product
compliantwith FDA Radiation Performance Standards, 21 CFR Subchapter J, as wellas International Safety Standard IEC-825-1. Typical
applicationsinclude: LANs (Local Area Networks), clustered workstation links, and connectionsto mass storage devices.
The C85-100M-C8A transceiver has anindependent Transmitter (TX) and Receiver (RX). The transmitter consists of a high reliability 850nm
VCSEL (Vertical Cavity Serface Emitting Laser) diode which couples to a fiber optic cable through an SC connector. TheTX is driven with a
differential PECL (Positive Emitter Coupled Logic)signal applied to TX In+ and TX In-. The maximum optical power meets theclass I laser
safety standard per FDA and IEC. The recieverconsists of a high performance 850 nm GaAs PIN photodiode detector. Opticalinput is coupled
to the receiver with either a 50/125 or a 62.5/125 micronfiber through an SC connector.
APPLICATIONS:
FDDI / Fast Ethernet●
ATM●
Transmitter Electro-optical Characteristics:
PARAMETERS SYMBOL MIN TYP MAX UNIT
Wavelength λp830 850 860 nm
Optical Output Power (1) Po -10 -4
dBm
Supply Current Icc 35 45 mA
C85100MC1A
Power Dissipation PDISS 0.175 W
Supply Voltage Vcc 4.75 5.25 V
Data Input Voltage - Low(2) VIL -VCC -1.810 -1.475 V
Data Input Voltage - High(2) VIH - VCC -1.165 -0.880 V
Optical Rise Time TR 0.6 3.5 ns
Optical Fall Time TF 0.8 3.5 ns
Duty Cycle Distortion DCD 0.6 ns p-p
Systematic Jitter SJ 0.6 ns p-p
Random Jitter RJ 0.2 0.69 ns p-p
(1) The launch power of (-10, -4) dBm is specially designed for the 2 km distance requirement and the maximum
optical power meets the class I laser safety standard.
(2) Voltage levels listed are compatible with 100K SeriesPECL logic levels. The parts are compatible with 10K and 10KH Series logicwhen
driven with differential signals.
(3) This Optical Extinction Ratio is expressed in decibels (dB) by the relationship 10*log(Phigh avg/Plow avg).
Receiver Electro-optical Characteristics:
PARAMETERS SYMBOL MIN TYP MAX UNIT
Supply Current Icc 55 mA
Power Dissipation PDISS 0.275 W
Supply Voltage Vcc 4.75 5.25 V
Data Output Voltage - Low (1) VOL - VCC -1.810 -1.475 V
Data Output Voltage - High(1) VOH - VCC -1.165 -0.880 V
Signal Detect output Voltage- Low VOL - VCC -1.810 -1.475 V
Signal Detect output Voltage- High VOH - VCC -1.165 -0.880 V
Rise Time TR 1.3 2.2 ns
Fall Time TF 1.3 2.2 ns
Duty Cycle Distortion DCD 0.4 ns p-p
Systematic Jitter SJ 1.20 ns p-p
Random Jitter RJ 0.2 2.14 ns p-p
Sensitivity -30 -27 dBm
Operating Wavelength λ 800 900 nm
Power Level (avg.) Detect Assert PA -33 dBm
Power Level (avg.) Detect Deassert PD -45 dBm
Level detect hysteresis PA - PD 1.75 2.25 2.75 dB
Signal Detect Assert Time 100 µs
Signal Detect Deassert Time 350 µs
(1) Voltage levels listed are compatible with 100K SeriesPECL logic levels. The parts are compatible with 10K and 10KH Series logicwhen driven with differential signals.
Absolute Maximum Ratings:
Parameter Symbol Min. Max. Unit
Storage Temperature Ts -40 100 oC
Operating Temperature To0 70 oC
Lead Solder Temperature 260/10 oC /sec
Supply Voltage VCC -0.5 7 V
OUTLINE DIMENSIONS:
C85100MC1A
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Green, Red, & Infrared Laser Diode Modules | Laser Diodes | Laser Accessories| Laser Products | Electroluminescent Products |
C85-155M-C1A
High Performance & Low Cost 155Mbps ATM Multimode Fiber Transceiver
Using 850nm VCSEL Transmitter & 1300 nm InGaAs PIN receiver
for SONET OC-3/SDH STM-1 in Low Cost 1 x 9 Package Style
FEATURES
Fully compatible with 1300 nm optical links and various brand name'stransceivers. ●
50 % power saving than LED transceivers. ●
Consisting of 850 nm VCSEL transmitter & 1300 nm InGaAs PIN receiver. ●
Full compliance with the IEEE 802.3 standard. ●
Single +5V power supply. ●
Industry standard 1 x 9 package footprint. ●
Duplex SC connector. ●
Class I Laser Safe per FDA and IEC ●
Driving up to 2 km for multimode optical fiber. ●
High performance and low cost. ●
DESCRIPTION
The C85-155M-C1A transceiver from Lasermate is a 155Mbps/194MBd fiber optic transceiver module in the new industry standard 1x9 SIP package
style with a duplex SC connector interface. This transceiver is designed to meet the ATM (Asynchronous Transfer Mode) distance requirements,
which is up to 2 Km in either 50 micron or 62.5 micron multimode fiber, for multimode fiber ATM backbone links and multimode fiber ATM wiring
closet to desktop links applications. It will provide the system designer with products to implement a range of solutions for multimode fiber SONET
OC-3 (SDH STM-1) physical layers for ATM and other services. This transceiver is a low cost solution to the requirements of ATM155
interconnects. It is a class I laser product compliant with FDA Radiation Performance Standards, 21 CFR Subchapter J, as well as International
Safety Standard IEC-825-1. Typical applications include: LANs (Local Area Networks), clustered workstation links, and connections to mass storage
devices.
The C85-155M-C1A transceiver has an independent Transmitter (TX) and Receiver (RX). The transmitter consists of a high reliability 850nm VCSEL
(Vertical Cavity Serface Emitting Laser) diode which couples to a fiber optic cable through an SC connector. The TX is driven with a differential
PECL (Positive Emitter Coupled Logic) signal applied to TX In+ and TX In-. The maximum optical power meets the class I laser safety standard. The
reciever consists of a high performance 1300 nm InGaAs PIN photodiode detector. Optical input is coupled to the receiver with either a 50/125 or a
62.5/125 micron fiber through an SC connector.
APPLICATIONS
FDDI / Fast Ethernet●
ATM / SONET OC-3 / SDH STM-1●
Transmitter Electro-optical Characteristics:
PARAMETERS SYMBOL MIN TYP MAX UNIT
Wavelength λp830 850 860 nm
Optical Output Power (1) Po -19 -14 dBm
Supply Current Icc 35 45 mA
Power Dissipation PDISS 0.175 W
Supply Voltage Vcc 4.75 5.25 V
Data Input Voltage - Low(2) VIL -VCC -1.810 -1.475 V
Data Input Voltage - High(2) VIH - VCC -1.165 -0.880 V
C85155MC1A
Optical Rise Time TR 0.6 3.0 ns
Optical Fall Time TF 0.8 3.0 ns
Duty Cycle Distortion DCD 0.6 ns p-p
Systematic Jitter SJ 1.20 ns p-p
Random Jitter RJ 0.52 ns p-p
(1) The launch power is detected by an InGaAs PIN photodiode calibrated at 1300 nm, and the maximum optical power meets the class I laser safety
standard.
(2) Voltage levels listed are compatible with 100K Series PECL logic levels. The parts are compatible with 10K and 10KH Series logic when driven
with differential signals.
Receiver Electro-optical Characteristics:
PARAMETERS SYMBOL MIN TYP MAX UNIT
Supply Current Icc 55 mA
Power Dissipation PDISS 0.275 W
Supply Voltage Vcc 4.75 5.25 V
Data Output Voltage - Low (1) VOL - VCC -1.810 -1.475 V
Data Output Voltage - High (1) VOH - VCC -1.165 -0.880 V
Signal Detect output Voltage - Low VOL - VCC -1.810 -1.475 V
Signal Detect output Voltage - High VOH - VCC -1.165 -0.880 V
Rise Time TR 1.3 2.2 ns
Fall Time TF 1.3 2.2 ns
Duty Cycle Distortion DCD 0.4 ns p-p
Systematic Jitter SJ 1.20 ns p-p
Random Jitter RJ 0.52 ns p-p
Sensitivity -33 -30 dBm
Operating Wavelength λ 1270 1380 nm
Power Level (avg.) Detect Assert PA -33 dBm
Power Level (avg.) Detect Deassert PD -45 dBm
Level detect hysteresis PA - PD 1.75 2.25 2.75 dB
Signal Detect Assert Time 100 µs
Signal Detect Deassert Time 350 µs
(1) Voltage levels listed are compatible with 100K Series PECL logic levels. The parts are compatible with 10K and 10KH Series logic when driven with differential signals.
Absolute Maximum Ratings:
Parameter Symbol Min. Max. Unit
Storage Temperature Ts -40 100 oC
Operating Temperature To0 70 oC
Lead Solder Temperature 260/10 oC /sec
Supply Voltage VCC -0.5 7 V
OUTLINE DIMENSIONS:
C85155MC1A
VCSELs | Communication Lasers | Photodiode Receivers | Fiber Optical Transceivers | Book Store | On Sale Items |
Green, Red, & Infrared Laser Diode Modules | Laser Diodes | Laser Accessories| Laser Products | Electroluminescent Products |
C85-155M-C8A
High Performance & Low Cost 155Mbps ATM Multimode Fiber Transceivers
Using 850nm VCSEL Transmitter & 850 nm GaAs PIN receiver
for SONET OC-3/SDH STM-1 in Low Cost 1x9 Package Style
FEATURES
Fully compatible with 850 nm optical links and various brand
name's transceivers.
●
50 % power saving than LED transceivers. ●
Consisting of 850 nm VCSEL transmitter & 850 nm GaAs PIN
receiver.
●
Full compliance with the IEEE 802.3 standard. ●
Single +5V power supply. ●
Industry standard 1 x 9 package footprint. ●
Duplex SC connector. ●
Class I Laser Safe per FDA and IEC ●
Driving up to 2 km for multimode optical fiber. ●
High performance and low cost. ●
DESCRIPTION
The C85-155M-C8A transceiver from Lasermate is 155Mbps/194MBd fiber optic transceiver modules in the new industry standard 1x9 SIP
package style with a duplex SC connector interface. This transceiver is designed for multimode fiber ATM backbone links and multimode fiber
ATM wiring closet to desktop links applications. The C85-155M-C8A transceiver is designed to meet the standard 2,000 m distance
requirement. These will provide the system designer with products to implement a range of solutions for multimode fiber SONET OC-3 (SDH
STM-1) physical layers for ATM and other services. These transceiver is a low cost solution to the requirements of ATM155 interconnects.
They are class I laser products compliant with FDA Radiation Performance Standards, 21 CFR Subchapter J, as well as International Safety
Standard IEC-825-1. Typical applications include: LANs (Local Area Networks), clustered workstation links, and connections to mass storage
devices.
The C85-155M-C8A transceiver has an independent Transmitter (TX) and Receiver (RX). The transmitter consists of a high reliability 850nm
VCSEL (Vertical Cavity Serface Emitting Laser) diode which couples to a fiber optic cable through an SC connector. The TX is driven with a
differential PECL (Positive Emitter Coupled Logic) signal applied to TX In+ and TX In-. The maximum optical power meets the class I laser
safety standard. The reciever consists of a high performance 850 nm GaAs PIN photodiode detector. Optical input is coupled to the receiver with
either a 50/125 or a 62.5/125 micron fiber through an SC connector.
APPLICATIONS
FDDI / Fast Ethernet●
ATM / SONET OC-3 / SDH STM-1●
Transmitter Electro-optical Characteristics:
PARAMETERS SYMBOL MIN TYP MAX UNIT
Wavelength λp830 850 860 nm
Optical Output Power (1) Po-10 -4
dBm
Supply Current Icc 35 45 mA
Power Dissipation PDISS 0.175 W
C85155NC8AB
Supply Voltage Vcc 4.75 5.25 V
Data Input Voltage - Low(2) VIL -VCC -1.810 -1.475 V
Data Input Voltage - High(2) VIH - VCC -1.165 -0.880 V
Optical Rise Time TR 1.3 3.5 ns
Optical Fall Time TF 1.3 3.5 ns
Duty Cycle Distortion DCD 0.6 ns p-p
Systematic Jitter SJ 1.2 ns p-p
Random Jitter RJ 0.2 0.52 ns p-p
(1) The launch power of (-10, -4) dBm is specially designed for the 2 km distance requirement and the maximum optical power meets the class I laser safety standard.
(2) Voltage levels listed are compatible with 100K Series PECL logic levels. The parts are compatible with 10K and 10KH Series logic when driven with differential signals.
Receiver Electro-optical Characteristics:
PARAMETERS SYMBOL MIN TYP MAX UNIT
Supply Current Icc 55 mA
Power Dissipation PDISS 0.275 W
Supply Voltage Vcc 4.75 5.25 V
Data Output Voltage - Low (1) VOL - VCC -1.810 -1.475 V
Data Output Voltage - High (1) VOH - VCC -1.165 -0.880 V
Signal Detect output Voltage - Low VOL - VCC -1.810 -1.475 V
Signal Detect output Voltage - High VOH - VCC -1.165 -0.880 V
Rise Time TR 1.3 2.2 ns
Fall Time TF 1.3 2.2 ns
Duty Cycle Distortion DCD 0.4 ns p-p
Systematic Jitter SJ 1.0 ns p-p
Random Jitter RJ 0.2 2.14 ns p-p
Sensitivity -30 -27
dBm
Operating Wavelength λ 800 900 nm
Power Level (avg.) Detect Assert PA -33 dBm
Power Level (avg.) Detect Deassert PD -45 dBm
Level detect hysteresis PA - PD 1.75 2.25 2.75 dB
Signal Detect Assert Time 100 µs
Signal Detect Deassert Time 350 µs
(1) Voltage levels listed are compatible with 100K Series PECL logic levels. The parts are compatible with 10K and 10KH Series logic when driven with differential signals.
Absolute Maximum Ratings:
Parameter Symbol Min. Max. Unit
Storage Temperature TS -40 100 oC
Operating Temperature To0 70 oC
Lead Solder Temperature 260/10 oC /sec
Supply Voltage VCC -0.5 7 V
OUTLINE DIMENSIONS (unit: mm):
C85155NC8AB
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1.25 Gbps 850nm VCSEL Multi-Mode 9-pin Optical Transceiver
Model No. C-85-125G-C8A Duplex SC, 50/125µm & 62.5/125µm MMF
C-85-125G-T8A Duplex ST, 50/125µm & 62.5/125µm MMF
C-85-125G-F8A Duplex FC, 50/125µm & 62.5/125µm MMF
Features
Low Cost and High Performance● 850nm VCSEL Diode as Transmitter● Power supply voltage: Single + 5V ● Electrical Interface: Differential PECL ● Pin-Configuration: 9-pin Single in Line● Connector Interface: SC/ST/FC Duplex Connector●
Output power: -6dBm to -4dBm (for 62.5/125 µm
MMF)
●
Sensitivity: <-17dBm●
Applications
Gigabit Ethernet■ Fiber Channel ■ Data Communication Network■ ATM-Switches ■
Absolute Maximum Ratings
Parameter Symbol Min. Typ. Max. Unit
Storage Temperature TS-40 85 oC
Operating Ambient Temperature TA0 70 oC
Supply Voltage Vcc 0 5.5 V
Lead Soldering (Temperature)
(Time) 260
10 oC
sec
TRANSCEIVER ELECTRICAL SPECIFICATIONS
Transmitter
Ta=0 to 70oC, Vcc=4.75 to 5.25V, VEE=GND, unless otherwise specified.
Parameter Symbol Min. Typ. Max. Unit Cond.
Supply Voltage VCCTX 4.75 5.00 5.25 V
Supply Current ITX 60 mA
Input Voltage (High)
(Low) VIH
VIL Vcc-1.17
Vcc-1.95 Vcc-0.73
Vcc-1.45 VNote 1
1.25 Gbps 850nm VCSEL Multi-mode optical transceiver
Note: VCCTX=5.0V, Ta=25oC
Receiver
Parameter Symbol Min. Typ. Max. Unit Cond.
Supply Voltage VCCRX 4.75 5.00 5.25 V
Supply Current IRX 120 mA
Output Volage (High)
(Low) V OH
V OL
VCCRX-1.03
VCCRX-1.81 VCCRX-0.88
VCCRX-1.62 V
V Note 1,2
Note 1,2
Note: 1. Output load resistor (RL=50 ohm) is connected to VCCRX-2.0V
2. VCCRX=5.0V, Ta=25oC
TRANSCEIVER OPTICAL SPECIFICATIONS
Transmitter
Tc=20 to 70oC, Vcc-VEE=4.75 to 5.25V , VEE=GND, unless otherwise specified.
Parameter Symbol Min. Typ. Max. Units Cond.
Optical Output Power Po -12 -8 dBm for 50/125 µm MMF, Note1
-6 -4 dBm for 62.5/125 µm MMF, Note1
Optical Extinction Ratio ER 9 dB Note1
Optical Rise Time (20~80%)
Optical Fall Time (80~20%) tr
tf 260
260 psec
psec
Center Wavelength λTX 830 845 860 nm
Spectral Width (RMS) ∆λ 0.85 nm
Note: 1.25Gbps, PRBS 27-1 signal at the beginning of life
Receiver
Tc=20 to 70oC, Vcc-VEE=4.75 to 5.25V unless otherwise specified.
Parameter Symbol Min. Typ. Max. Units Cond.
Optical Input Wavelength λRX 770 860 nm
Optical Return Loss ORL 12 dB
Minimum Input Power Pin -19 -17 dBm avg. Note 1
Saturation Power PSAT 0 dBm
SD Assert Level
SD Deassert Level
SD Hysterssis
Pa
Pd
Phys
-19
-22
3 dBm
dBm
dB
Note 1
Note 1
Note 1
Note: BER=1.0x10-12, 1.25G, PRBS 27-1
Please click below for more information.
Package Dimensions
Pin Assignment
If you have any comments or request for detail product information, please fill the
Quotation & Information Request Form or mail to: info@lasermate.com.
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1.25 Gbps 850nm VCSEL Multi-mode optical transceiver
1.25 Gbps 850nm VCSEL Multi-mode optical transceiver
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Package Dimensions of 1x9-pin Optical Transceiver
Units:mm (Top View)
1x9 pins 1.25Gbps 850 nm VCSEL duplex SC/ST/FC multimode fiber optical transceiver
VCSELs | Communication Lasers | Photodiode Receivers | Fiber Optical Transceivers | Book Store | On Sale Items |
Green, Red, & Infrared Laser Diode Modules | Laser Diodes | Laser Accessories| Laser Products | Electroluminescent Products |
PIN ASSIGNMENT:
(TOP VIEW)
If you have any comments or request for detail product information, please fill the
Quotation & Information Request Form or mail to: info@lasermate.com.
HOME | PRODUCT LIST | ORDER FORM | QUO & INFO REQUEST |
PIN ASSIGNMENT FOR 1.25 GBPS 850NM VCSEL MM FIBER OPTICAL TRANSCEIVERS
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Specifications of LT System Laser Diode Modules
Specifications of LTG-Series Laser Diode Modules
Specifications of LTC-Series Laser Diode Modules
Specifications of LTG-Series Laser Diode Modules
Model No.: LTG635-
X1A X2
LTG650-
X1A X2
LTG670-
X1A X2
LTG780-
X1A X2
LTG808-
X1A X2
LTG830-
X1A X2
Wavelength (nm) 635 650 670 780 808 830
Diode structure Index guided
Optical output power (mW) X1=1, 4 & 7 X1=1, 4, 7 & 14 X1=1 & 4 X1= 4 X1= 4 X1= 20
0.7-0.99 (X1=1); 2.5-3.5 (X1=4); 5-7 (X1=7); 10-14 (X1=14); 16-20 (X1=20)
Laser class Class II (X1=1); Class IIIa (X1=4);
Class IIIb (X1=7, 14 & 20) Class IIIb
Typ. operating current (mA) 40 30 35 30 25 85
Operating voltage (VDC) Standard:4.5 –6 (X2 = H); Optional: 3 - 5 (X2= R) & 3-9 (X2 =G)
Drive Circuit Standard: regulated APC with soft-start protection (X2= H)
Optional: regulated APC (X2= R & G)
Optics 3-element glass collimating lens with AR coating
Beam divergence (mrad) < 0.5
Beam size @ 7 m (mm) 5 x 8
Beam profile elliptic
Focus Adjustable
Operating temperature (oC) -10 to +50 -10 to +40 -10 to +50
Connector Black wire - & red wire +
Dimensions (in) Dia. 0.5 x L. 2
Weight (gm) 35
Option Connecting to (1) the cross hair optics with 9 degree full fan angle
(2) LO- series line optics (LO-04, LO-45, LO-60 & LO-90)
(3) TC- series beam expander (TC-2X, TC-3X & TC-10X)
Note: The LT-series laser diode modules are designated solely as OEM components for incorporation into the customer's end
products. Therefore, they do not comply with the appropriate requirements of FDA 21CFR, section 1040.10 and 1040.11 for
complete laser products.
Specifications of LTC-Series Laser Diode Modules
Model No.: LTC635-
X1A X2
LTC650-
X1A X2
LTC670-
X1A X2
LTC780-
X1A X2
LTC808-
X1A X2
LTC830-
X1A X2
Wavelength (nm) 635 650 670 780 808 830
Diode structure Index guided
Optical output power (mW) X1=1, 2 & 4 X1=1, 2, 4 & 8 X1=1 & 2 X1= 2 X1= 2 X1= 10
0.7-0.99 (X1=1); 1.2-2 (X1=2); 2.4-4.0 (X1=4); 5-8 (X1=8); 6-10 (X1=10)
Laser class Class II (X1=1); Class IIIa (X1=2 & 4);
Class IIIb (X1=8 & 10) Class IIIb
Typ. operating current (mA) 40 30 35 30 25 85
Operating voltage (VDC) Standard:4.5 –6 (X2 = H); Optional: 3 - 5 (X2= R) & 3-9 (X2 =G)
Drive Circuit Standard: regulated APC with soft-start protection (X2= H)
Optional: regulated APC (X2= R & G)
Optics Singlet plastic collimating lens
Beam divergence (mrad) < 0.5
Beam size @ 7 m (mm) Dia. 5
Beam profile circular
Focus Adjustable
Operating temperature (oC) -10 to +50 -10 to +40 -10 to +50
Connector Black wire - & red wire +
Dimensions (in) Dia. 0.5 x L. 2
Weight (gm) 35
Option Connecting to (1) the cross hair optics with 9 degree full fan angle
(2) LO- series line optics (LO-04, LO-45, LO-60 & LO-90)
(3) TC- series beam expander (TC-2X, TC-3X & TC-10X)
Note: The LT-series laser diode modules are designated solely as OEM components for incorporation into the customer's end
products. Therefore, they do not comply with the appropriate requirements of FDA 21CFR, section 1040.10 and 1040.11 for
complete laser products.
NOTES:
We offer 650nm laser diode module with the same low price of 670nm
laser diode module. Our 650nm laser diode module will provide you 3.4 time
brighter laser beam than that of 670nm laser diode module.
Infrared 808 nm laser modules with 100 & 250 mW optical output power are also available.
If you have any comments or request for detail product information, please fill the
Quotation & Information Request Form or mail to: info@lasermate.com.
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High Power Laser Diode Modules
Model No. LBG808120AC LBG808250AC LBG808500AC
Wavelength
(nm) 808 808 808
Optical output
power (mW) 100 - 120 230 - 250 450 - 500
Green, red, & infrared laser diode modules
Operating
voltage
(V DC) 5 5 5
Operating
current (A) <0.55 <0.75 <1.5
PCB ACC
(automatic
current control)
ACC (automatic
current control) ACC (automatic current control)
Optics
3-element glass
collimating lens
with
anti-reflective
coating
3-element glass
collimating lens
with
anti-reflective
coating
3-element glass collimating lens with
anti-reflective coating
Focus adjustable adjustable adjustable
Beam profile elliptic beam elliptic beam elliptic beam
Beam size @ 5
m (mm) 5 x 8 5 x 8 5 x 8
Operating
temperature -10 to 40 oC -10 to 40 oC -10 to 40 oC
Connector red wire (+) &
black wire (-) red wire (+) &
black wire (-) red wire (+) & black wire (-)
Dimensions
(cm) Dia. 3.2 x L.
11.5 Dia. 3.2 x L.
11.5 Dia. 3.2 x L. 11.5
For your information, TTL and analog modulation versions for LBG- series laser modules are also
available.
Note: The LB-series laser diode modules are designated solely as OEM components for incorporation
into the customer's end products. Therefore, they do not comply with the appropriate requirements of
FDA 21CFR, section 1040.10 and 1040.11 for complete laser products. The customer is responsible to be
in compliance with FDA requirements.
If you have any comments or request for detail product information, please fill the
Quotation & Information Request Form or mail to: info@lasermate.com.
Please update our new address/phone numbers!
Lasermate Corporation
20264 E. Carrey Road, Walnut, CA 91789, USA Tel: (909) 718-0999 Fax: (909)718-0998
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Green, red, & infrared laser diode modules
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Specifications of Analog modulatable LT- series Laser Diode Modules
Model No.: LTG635XA5M LTG650XA5M LTG670XA5M LTG7804A5M LTG8084A5M
Wavelength (nm) 635 650 670 780 808
Diode structure Index guided
Optical output power
(mW) 0.7-0.99 (X=1); 2.5-3.5 (X=4); 5-7 (X=7); 10-14 (X=14) 2.5-3.5
Laser Class Class II (X=1), Class IIIa (X=3), Class IIIb (X=7 &14) Class IIIb
Typ. Operating current
(mA) 40 (X=1 & 4), 60
(X=7) 30 (X=1 & 4), 35
(X=7), 65 (X=14) 35 (X=1 & 4) 30 25
Operating voltage (VDC) 5
Control voltage (VDC) Maximum 5
Drive Circuit APC with modulator
Modulation bandwidth
(Hz) From DC to 100 KHz
Modulation mode Analog
Optics 3-element glass collimating lens with AR coating
Beam divergence (mrad) < 0.5
Beam profile & size @ 7
m elliptic & 5 mm x 8 mm
Focus adjustable
Operating temperature
(oC) -10 to +40
Dimensions (in) Dia. 0.5 x L. 2
Weight (gm) 35
Option Connecting to (1) the cross hair optics with 9 degree full fan angle
(2) LO- series line optics (LO-04, LO-45, LO-60 & LO-90)
(3) TC- series beam expander (TC-2X, TC-3X & TC-10X)
Note: The LT-series laser diode modules are designated solely as OEM components for incorporation into the customer's end
products. Therefore, they do not comply with the appropriate requirements of FDA 21CFR, section 1040.10 and 1040.11 for
complete laser products.
If you have any comments or request for detail product information, please fill the
Quotation & Information Request Form or mail to: info@lasermate.com.
HOME | PRODUCT LIST | ORDER FORM | QUO & INFO REQUEST |
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Specifications of TTL modulatable LT- series Laser Diode Modules
Model No.: LTG635XA5T LTG650XA5T LTG670XA5T LTG7804A5T LTG8084A5T
Wavelength (nm) 635 650 670 780 808
Diode structure Index guided
Optical output power
(mW) 0.7-0.99 (X=1); 2.5-3.5 (X=4); 5-7 (X=7); 10-14 (X=14) 2.5-3.5
Laser Class Class II (X=1), Class IIIa (X=3), Class IIIb (X=7 &14) Class IIIb
Typ. Operating current
(mA) 40 (X=1 & 4), 60
(X=7) 30 (X=1 & 4), 35
(X=7),
65 (X=14)
35 (X=1 & 4) 30 25
Operating voltage (VDC) 5
Control voltage (VDC) Maximum 5
Drive Circuit APC with modulator
Modulation bandwidth
(Hz) From DC to 100 KHz
Modulation mode TTL
Optics 3-element glass collimating lens with AR coating
Beam divergence (mrad) < 0.5
Beam profile & size @ 7
m elliptic & 5 mm x 8 mm
Focus adjustable
Operating temperature
(oC) -10 to +40
Dimensions (in) Dia. 0.5 x L. 2
Weight (gm) 35
Option Connecting to (1) the cross hair optics with 9 degree full fan angle
(2) LO- series line optics (LO-04, LO-45, LO-60 & LO-90)
(3) TC- series beam expander (TC-2X, TC-3X & TC-10X)
Note: The LT-series laser diode modules are designated solely as OEM components for incorporation into the customer's end
products. Therefore, they do not comply with the appropriate requirements of FDA 21CFR, section 1040.10 and 1040.11 for
complete laser products.
If you have any comments or request for detail product information, please fill the
Quotation & Information Request Form or mail to: info@lasermate.com.
HOME | PRODUCT LIST | ORDER FORM | QUO & INFO REQUEST |
Options for LT- Laser Modules
Compact Beam Expanders
* Connecting to LT- Laser Module Directly
* All Optical Glass Lens with AR coating
* Focusing Range from 50 cm to infinity
* Max. Entrance Aperture Dia. 4 mm
* Minimizing Beam Spot Size at Long Working Distance
Item No. Beam expander Beam diameter Divergence
TC-2X 2X 4 mm < 0.25 mrd
TC-3X 3X 4 mm < 0.17 mrd
TC-7X 7X 4 mm < 0.07 mrd
TC-10X 10X 4 mm < 0.05 mrd
Line Generating Optics
* Connecting to LT- Laser Module Directly
Options
* Cylinder Glass Lens
* Full Fan Angle 90 deg.
* Focusing range from 50 cm to infinity
* Highth: 2 mm at 700 cm distance
Item No. LO-90
Other Optional Line Generating Optics
* Connecting to LT- Laser Module Directly
* Glass Lens
* Full Fan Angle 60, 45, 30, 15, 4 deg.
Item No. LO-60 LO-45 LO-30 LO-15 LO-4
If you have any comments or request for detail product information, please fill the
Information Request Form or mail to: info@lasermate.com.
Return to Lasermate Corporation Home Page
Options
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Green, Red, & Infrared Laser Diode Modules | Laser Diodes | Laser Accessories | Laser Products | Electroluminescent Products |
High Performance Laser Diode Modules - LX System
The LX laser diode module system is a modified version of LT laser diode system designed for OEM applications with
DC-Jack connector for using AC adapter and beam focusing requirements.
Designed for the OEM, it is ideal for a wide range of low power laser applications, especially in continuous long time usage
such as bar code reader, measurement, alignment, and positioning.
Features
High
Performance
and Low Cost
●
Wide Range of
Wavelength
(635nm -
830nm) and
Output power
(0.9mW -
50mW)
●
Automatic
Power Control
●
Soft-start,
Short-circuit,
and
Reverse-polarity
Protections
●
Two High
Performance
Collimating
Lenses for Your
Choice
●
Adjustable
Focus
●
Super Fine
Pitch (0.25mm)
for Precision
Focusing
●
Standard
English
●
LX-Series Laser Diode Modules
Dimension
(Dia. = 0.5 in.,
L = 2.0 in.)
DC-Jack
connector for
using AC
adapter
●
Line Generating
Optics and
Compact Beam
●
Expander for
Options
●
Specifications of LX- laser modules
Accessory options for LX- laser modules
If you have any comments or request for detail product information, please fill the
Quotation & Information Request Form or mail to: info@lasermate.com.
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LX-Series Laser Diode Modules
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Specifications of LX System Laser Diode Modules
Specifications of LXG-Series Laser Diode Modules
Specifications of LXC-Series Laser Diode Modules
Specifications of LXG-Series Laser Diode Modules
Model No.: LXG635-
X1A X2
LXG650-
X1A X2
LXG670-
X1A X2
LXG780-
X1A X2
LXG808-
X1A X2
LXG830-
X1A X2
Wavelength (nm) 635 650 670 780 808 830
Diode structure Index guided
Optical output power (mW) X1=1, 4 & 7 X1=1, 4, 7 & 14 X1=1 & 4 X1= 4 X1= 4 X1= 20
0.7-0.99 (X1=1); 2.5-3.5 (X1=4); 5-7 (X1=7); 10-14 (X1=14); 16-20 (X1=20)
Laser class Class II (X1=1); Class IIIa (X1=4);
Class IIIb (X1=7, 14 & 20) Class IIIb
Typ. operating current (mA) 40 30 35 30 25 85
Operating voltage (VDC) Standard:4.5 –6 (X2 = H); Optional: 3 - 5 (X2= R) & 3-9 (X2 =G)
Drive Circuit Standard: regulated APC with soft-start protection (X2= H)
Optional: regulated APC (X2= R & G)
Optics 3-element glass collimating lens with AR coating
Beam divergence (mrad) < 0.5
Beam size @ 7 m (mm) 5 x 8
Beam profile elliptic
Focus Adjustable
Operating temperature (oC) -10 to +50 -10 to +40 -10 to +50
Connector 5V DC-Jack
Dimensions (in) Dia. 0.5 x L. 2
Weight (gm) 35
Option Connecting to (1) the cross hair optics with 9 degree full fan angle
(2) LO- series line optics (LO-04, LO-45, LO-60 & LO-90)
(3) TC- series beam expander (TC-2X, TC-3X & TC-10X)
Note: The LX-series laser diode modules are designated solely as OEM components for incorporation into the customer's end
products. Therefore, they do not comply with the appropriate requirements of FDA 21CFR, section 1040.10 and 1040.11 for
complete laser products.
Specifications of LXC-Series Laser Diode Modules
Model No.: LXC635-
X1A X2
LXC650-
X1A X2
LXC670-
X1A X2
LXC780-
X1A X2
LXC808-
X1A X2
LXC830-
X1A X2
Wavelength (nm) 635 650 670 780 808 830
Diode structure Index guided
Optical output power (mW) X1=1, 2 & 4 X1=1, 2, 4 & 8 X1=1 & 2 X1= 2 X1= 2 X1= 10
0.7-0.99 (X1=1); 1.2-2 (X1=2); 2.4-4.0 (X1=4); 5-8 (X1=8); 6-10 (X1=10)
Laser class Class II (X1=1); Class IIIa (X1=2 & 4);
Class IIIb (X1=8 & 10) Class IIIb
Typ. operating current (mA) 40 30 35 30 25 85
Operating voltage (VDC) Standard:4.5 –6 (X2 = H); Optional: 3 - 5 (X2= R) & 3-9 (X2 =G)
Drive Circuit Standard: regulated APC with soft-start protection (X2= H)
Optional: regulated APC (X2= R & G)
Optics Singlet plastic collimating lens
Beam divergence (mrad) < 0.5
Beam size @ 7 m (mm) Dia. 5
Beam profile circular
Focus Adjustable
Operating temperature (oC) -10 to +50 -10 to +40 -10 to +50
Connector 5V DC-Jack
Dimensions (in) Dia. 0.5 x L. 2
Weight (gm) 35
Option Connecting to (1) the cross hair optics with 9 degree full fan angle
(2) LO- series line optics (LO-04, LO-45, LO-60 & LO-90)
(3) TC- series beam expander (TC-2X, TC-3X & TC-10X)
Note: The LX-series laser diode modules are designated solely as OEM components for incorporation into the customer's end
products. Therefore, they do not comply with the appropriate requirements of FDA 21CFR, section 1040.10 and 1040.11 for
complete laser products.
NOTES:
We offer 650nm laser diode module with the same low price of 670nm
laser diode module. Our 650nm laser diode module will provide you 3.4 time
brighter laser beam than that of 670nm laser diode module.
Infrared 808 nm laser modules with 100 & 250 mW optical output power are also available.
If you have any comments or request for detail product information, please fill the
Quotation & Information Request Form or mail to: info@lasermate.com.
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Prime Laser Diode Modules - LJ System
The LJ laser diode module is designed for OEM applications with very low cost, small size, good heat sink, and
beam focusing requirements. TTL modulation from DC to 100KHz for LJ laser diode module is also available.
Designed for the OEM, it is ideal for a wide range of low power laser applications, such as leveling,
measurement, alignment, and positioning.
LJ-Series Laser Diode Modules
Features
Good Performance and Very Low Cost●
Miniature, Rugged Design: 12 Dia. x 29.5mm L.●
Wide Operating Voltage: 3-10VDC for 650 - 830nm, 3-4.5VDC for 635nm●
Adjustable Focus●
Good Heat Sink Design●
Automatic Power Control●
Reverse-polarity Protections●
Wide Range of Wavelength 635nm - 830nm●
Specifications of LJ- laser modules
Specifications of Analog Modulatable LJ- laser modules
Specifications of TTL Modulatable LJ- laser modules
If you have any comments or request for detail product information, please fill the
Information Request Form or mail to: info@lasermate.com.
Return to Lasermate Corporation Home Page
LJ-Series Laser Diode Modules
Specifications of LJ- Prime Laser Diode Modules
Specifications of Class IIIa LJ- Laser Diode Modules
Model No. LJP6353AR-A (B or C) LJP6503AR LJP6703AR
Wavelength (nm) 635 650 670
Diode structure index guided index guided index guided
Classification class IIIa (< 5mW) class IIIa (< 5mW) class IIIa (< 5mW)
Output power (mW) 2.1- 3.0 2.1- 3.0 2.1- 3.0
Operating current (mA) < 60 (<80 or <70) < 45 < 75
Operating voltage
(VDC) 2.8 - 4.5 2.8 - 6.0 2.8 - 4.5
Drive circuit regulated automatic power
control regulated automatic
power control regulated automatic
power control
Protections short circuit & reverse
polarity protections short circuit & reverse
polarity protections short circuit & reverse
polarity protections
Optics singlet plastic collimating
lens with AR coating
singlet plastic
collimating lens with
AR coating
singlet plastic
collimating lens with
AR coating
Focus adjustable adjustable adjustable
Beam size @ 7 m (mm) 4 x 7 ± 1 4 x 7 ± 1 4 x 7 ± 1
Beam divergence (mrad) <0.5 < 0.5 < 0.5
Beam profile elliptical elliptical elliptical
Connector wires (red + & black -) wires (red + & black -) wires (red + & black -)
Wire length (cm) 10 10 10
Operating temperature
(oC) -10 to 50 (-10 to 50 or -10
to 40) -10 to 50 (or -10 to 40) -10 to 50
Storage temperature
(oC) - 40 to 85 - 40 to 85 - 40 to 85
Dimensions (mm) 12 (Dia.) x 29.2 (L) 12 (Dia.) x 29.2 (L) 12 (Dia.) x 29.2 (L)
NOTES:
1. We offer the 650nm laser diode module with the same low price of 670nm laser diode module. For your
information, the 650nm laser is 3.4 time brighter than the 670nm laser.
2. Fixed focus for LJ- laser modules is available, if specified.
3. The LJ- series laser diode modules are designated solely as OEM components for incorporation into
Specifications of LJ- Prime Laser Diode Modules
customer's end products. Therefore, they do not comply with the appropriate require ments of FDA 21CFR,
section 1040.10 and 1040.11 for complete laser products.
Specifications of Class II LJ- Laser Diode Modules
Model No. LJP6353AR-A (B or C) LJP6503AR LJP6703AR
Wavelength (nm) 635 650 670
Diode structure index guided index guided index guided
Classification class IIIa (< 5mW) class IIIa (< 5mW) class IIIa (< 5mW)
Output power (mW) 0.7-0.99 0.7-0.99 0.7-0.99
Operating current (mA) < 60 (<80 or <70) < 45 < 75
Operating voltage
(VDC) 2.8 - 4.5 2.8 - 6.0 2.8 - 4.5
Drive circuit regulated automatic power
control regulated automatic
power control regulated automatic
power control
Protections short circuit & reverse
polarity protections short circuit & reverse
polarity protections short circuit & reverse
polarity protections
Optics singlet plastic collimating
lens with AR coating
singlet plastic
collimating lens with
AR coating
singlet plastic
collimating lens with
AR coating
Focus adjustable adjustable adjustable
Beam size @ 7 m (mm) 4 x 7 ± 1 4 x 7 ± 1 4 x 7 ± 1
Beam divergence (mrad) <0.5 < 0.5 < 0.5
Beam profile elliptical elliptical elliptical
Connector wires (red + & black -) wires (red + & black -) wires (red + & black -)
Wire length (cm) 10 10 10
Operating temperature
(oC) -10 to 50 (-10 to 50 or -10
to 40) -10 to 50 (or -10 to 40) -10 to 50
Storage temperature
(oC) - 40 to 85 - 40 to 85 - 40 to 85
Dimensions (mm) 12 (Dia.) x 29.2 (L) 12 (Dia.) x 29.2 (L) 12 (Dia.) x 29.2 (L)
NOTES:
1. We offer the 650nm laser diode module with the same low price of 670nm laser diode module. For your
information, the 650nm laser is 3.4 time brighter than the 670nm laser.
2. Fixed focus for LJ- laser modules is available, if specified.
3. The LJ- series laser diode modules are designated solely as OEM components for incorporation into
customer's end products. Therefore, they do not comply with the appropriate require ments of FDA 21CFR,
section 1040.10 and 1040.11 for complete laser products.
If you have any comments or request for detail product information, please fill the
Information Request Form or mail to: info@lasermate.com.
Specifications of LJ- Prime Laser Diode Modules
Please update our new
address/phone
numbers!
Address: 20264 E. Carrey
Road, Walnut, CA 91789,
USA
Tel: (909) 718-0999
Fax: (909)718-0998
E-mail: info@lasermate.com
Web:
http://www.lasermate.com/
VCSELs | Communication Lasers | Photodiode Receivers | Fiber Optical Transceivers | Book Store | On Sale Items |
Green, Red, & Infrared Laser Diode Modules | Laser Diodes | Laser Accessories | Laser Products | Electroluminescent
Products |
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ORDER FORM
PRODUCT LIST
QUO & INFO REQUEST
Analog Modulatable LJ- Laser Diode Modules
Specifications of Class IIIa & IIIb Analog Modulatable LJ- Laser Diode Modules
Model No. LJP6353A3-M- A (
or C) LJP6503A3-M-A (C or
E) LJP6703A3-M LJP8083A3-M
Wavelength (nm) 635 650 670 808
Diode structure index guided index guided index guided index guided
Classification class IIIa (< 5mW) class IIIa (< 5mW) class IIIa (< 5mW) class IIIb
Output power
(mW) 2.5 - 3.0 2.5 - 3.0 2.5 - 3.0 2.5 - 3.0
Operating current
(mA) < 60 (<45) < 45 < 75 <40
Operating voltage
(VDC) 3 3 3 3
Control voltage
(VDC) max. 3 max. 3 max. 3 max. 3
Drive circuit APC with modulator APC with modulator APC with modulatorAPC with modulator
Operation mode analog analog analog analog
Bandwidth (Hz) up to 100K up to 100K up to 100K up to 100K
Optics singlet plastic
collimating lens singlet plastic
collimating lens singlet plastic
collimating lens singlet plastic
collimating lens
Focus adjustable adjustable adjustable adjustable
Beam size @ 7 m
(mm) 3.5 x 6 ± 1 3.5 x 6 ± 1 3.5 x 6 ± 1 3.5 x 6 ± 1
Beam divergence
(mrad) < 0.5 < 0.5 < 0.5 <0.5
Beam profile elliptic elliptic elliptic elliptic
Specifications of Analog Modulatable LJ- Laser Diode Modules
Connector wires (red + & black
-) wires (red + & black -) wires (red + & black
-) wires (red + & black
-)
Heat sink provided provided provided provided
Wire length (cm) 10 10 10 10
Operating
temperature (oC) -10 to 50 ( or 40) -10 to 50 (40 or 60) -10 to 50 -10 to 40
Storage
temperature (oC) - 40 to 85 - 40 to 85 - 40 to 85 - 40 to 85
Dimensions (mm) 12 (Dia.) x 29.5 (L) 12 (Dia.) x 29.5 (L) 12 (Dia.) x 29.5 (L) 12 (Dia.) x 29.5 (L)
NOTES:
1. We offer 650nm laser diode module with the same low price of 670nm laser
diode module. Our 650nm laser diode module will provide you about 3.4 time brighter laser
beam than that of 670nm laser diode module.
2. Fixed focus for LJ- laser modules is available, if specified.
3. The LJ- series laser diode modules are designated solely as OEM components
for incorporation into customer's end products. Therefore, they do not comply with
the appropriate requirments of FDA 21CFR, section 1040.10 and 1040.11 for
complete laser products.
Specifications of Class II Analog Modulatable LJ- Prime Laser Diode Modules
Model No. LJP6351A3-M- A ( or C) LJP6501A3-M-A (C or E) LJP6701A3-M
Wavelength (nm) 635 650 670
Diode structure index guided index guided index guided
Classification class IIIa (< 5mW) class IIIa (< 5mW) class IIIa (< 5mW)
Output power (mW) 0.7-0.99 0.7-0.99 0.7-0.99
Operating current
(mA) < 60 (or <45) < 45 < 75
Operating voltage
(VDC) 3 3 3
Control voltage (VDC) max. 3 max. 3 max. 3
Drive circuit APC with modulator APC with modulator APC with modulator
Operation mode analog analog analog
Bandwidth (Hz) up to 100K up to 100K up to 100K
Optics singlet plastic collimating
lens singlet plastic collimating lenssinglet plastic collimating
lens
Focus adjustable adjustable adjustable
Beam size @ 7 m (mm) 3.5 x 6 ± 1 3.5 x 6 ± 1 3.5 x 6 ± 1
Beam divergence
(mrad) < 0.5 < 0.5 < 0.5
Beam profile elliptic elliptic elliptic
Specifications of Analog Modulatable LJ- Laser Diode Modules
Connector wires (red + & black -) wires (red + & black -) wires (red + & black -)
Heat sink provided provided provided
Wire length (cm) 10 10 10
Operating temperature
(oC) -10 to 50 ( or 40) -10 to 50 (40 or 60) -10 to 50
Storage temperature
(oC) - 40 to 85 - 40 to 85 - 40 to 85
Dimensions (mm) 12 (Dia.) x 29.5 (L) 12 (Dia.) x 29.5 (L) 12 (Dia.) x 29.5 (L)
If you have any comments or request for detail product information, please fill the
Quotation & Information Request Form or mail to: info@lasermate.com.
HOME | PRODUCT LIST | ORDER FORM | QUO & INFO REQUEST |
Specifications of Analog Modulatable LJ- Laser Diode Modules
Please update our new
address/phone
numbers!
Address: 20264 E. Carrey
Road, Walnut, CA 91789,
USA
Tel: (909) 718-0999
Fax: (909)718-0998
E-mail: info@lasermate.com
Web:
http://www.lasermate.com/
VCSELs | Communication Lasers | Photodiode Receivers | Fiber Optical Transceivers | Book Store | On Sale Items |
Green, Red, & Infrared Laser Diode Modules | Laser Diodes | Laser Accessories | Laser Products | Electroluminescent
Products |
HOME
ORDER FORM
PRODUCT LIST
QUO & INFO REQUEST
TTL Modulatable & Variable Power LJ- Laser Diode Modules
Specifications of Class IIIa & IIIb TTL Modulatable & Variable Power LJ- Laser Diode Modules
Model No. LJP6353A5-T- A (
or C) LJP6503A5-T-A (C or
E) LJP6703A5-T LJP8083A5-T
Wavelength (nm) 635 650 670 808
Diode structure index guided index guided index guided index guided
Classification class IIIa (< 5mW) class IIIa (< 5mW) class IIIa (< 5mW) class IIIb
Output power
(mW) 2.5 - 3.0 2.5 - 3.0 2.5 - 3.0 2.5 - 3.0
Operating current
(mA) < 60 (or <45) < 45 < 75 <40
Operating voltage
(VDC) 5 5 5 5
Control voltage
(VDC) max. 5 max. 5 max. 5 max. 5
Drive circuit APC with modulator APC with modulator APC with
modulator APC with
modulator
Operation mode analog analog analog analog
Bandwidth (Hz) up to 100K up to 100K up to 100K up to 100K
Optics singlet plastic
collimating lens singlet plastic
collimating lens singlet plastic
collimating lens singlet plastic
collimating lens
Focus adjustable adjustable adjustable adjustable
Beam size @ 7 m
(mm) 3.5 x 6 ± 1 3.5 x 6 ± 1 3.5 x 6 ± 1 3.5 x 6 ± 1
Beam divergence
(mrad) < 0.5 < 0.5 < 0.5 <0.5
Beam profile elliptic elliptic elliptic elliptic
Specifications of TTL Modulatable & Variable Power LJ- Laser Diode Modules
Connector wires (red + & black
-) wires (red + & black -) wires (red + & black
-) wires (red + & black
-)
Heat sink provided provided provided provided
Wire length (cm) 10 10 10 10
Operating
temperature (oC) -10 to 50 ( or 40) -10 to 50 (40 or 60) -10 to 50 -10 to 40
Storage
temperature (oC) - 40 to 85 - 40 to 85 - 40 to 85 - 40 to 85
Dimensions (mm) 12 (Dia.) x 29.5 (L) 12 (Dia.) x 29.5 (L) 12 (Dia.) x 29.5 (L) 12 (Dia.) x 29.5 (L)
NOTES:
1. We offer 650nm laser diode module with the same low price of 670nm laser
diode module. Our 650nm laser diode module will provide you about 3.4 time brighter laser
beam than that of 670nm laser diode module.
2. Fixed focus for LJ- laser modules is available, if specified.
3. The LJ- series laser diode modules are designated solely as OEM components
for incorporation into customer's end products. Therefore, they do not comply with
the appropriate requirments of FDA 21CFR, section 1040.10 and 1040.11 for
complete laser products.
Specifications of Class II TTL Modulatable & Variable Power LJ- Prime Laser Diode Modules
Model No. LJP6351A5-T- A ( or C) LJP6501A5-T-A (C or E) LJP6701A5-T
Wavelength (nm) 635 650 670
Diode structure index guided index guided index guided
Classification class IIIa (< 5mW) class IIIa (< 5mW) class IIIa (< 5mW)
Output power (mW) 0.7-0.99 0.7-0.99 0.7-0.99
Operating current (mA) < 60 (or <45) < 45 < 75
Operating voltage
(VDC) 5 5 5
Control voltage (VDC) max. 5 max. 5 max. 5
Drive circuit APC with modulator APC with modulator APC with modulator
Operation mode analog analog analog
Bandwidth (Hz) up to 100K up to 100K up to 100K
Optics singlet plastic collimating
lens singlet plastic collimating lens singlet plastic collimating
lens
Focus adjustable adjustable adjustable
Beam size @ 7 m (mm) 3.5 x 6 ± 1 3.5 x 6 ± 1 3.5 x 6 ± 1
Beam divergence (mrad) < 0.5 < 0.5 < 0.5
Beam profile elliptic elliptic elliptic
Connector yellow control, red + &
black - yellow control, red + & black
-yellow control, red + &
black -
Specifications of TTL Modulatable & Variable Power LJ- Laser Diode Modules
Heat sink provided provided provided
Wire length (cm) 10 10 10
Operating temperature
(oC) -10 to 50 ( or 40) -10 to 50 (40 or 60) -10 to 50
Storage temperature
(oC) - 40 to 85 - 40 to 85 - 40 to 85
Dimensions (mm) 12 (Dia.) x 29.5 (L) 12 (Dia.) x 29.5 (L) 12 (Dia.) x 29.5 (L)
If you have any comments or request for detail product information, please fill the
Quotation & Information Request Form or mail to: info@lasermate.com.
HOME | PRODUCT LIST | ORDER FORM | QUO & INFO REQUEST |
Specifications of TTL Modulatable & Variable Power LJ- Laser Diode Modules
Compact Laser Diode Modules - LM-Series
The LM laser diode module is designed for OEM applications with the lower cost, compact size, and beam
focusing requirements. Designed for the OEM, it is ideal for a wide range of low power laser applications, such as
alignment, leveling, and positioning.
Features
Good Performance and the Lower Cost●
Compact Design: 11.5 Dia. x 40 mm L.●
Adjustable Focus●
Focus Range from 6 cm or 20 cm to Infinity●
Circular and Elliptic Beam Shapes Available●
Regulated Automatic Power Control●
Operating Voltage 2.7 - 6.0 VDC●
Wide Range of Wavelength 635nm - 830nm●
LM-Series Laser Diode Modules
Specifications of LMC- laser modules
Specifications of LMP- laser modules
Specifications of LMG- laser modules
If you have any comments or request for detail product information, please fill the
Information Request Form or mail to: info@lasermate.com.
Return to Lasermate Corporation Home Page
LM-Series Laser Diode Modules
Specifications of LMC- Compact Laser Diode Modules
Specifications of Class IIIa LMC- Compact Laser Diode Modules
Model No. LMC6352AR-A (or B) LMC6502AR LMC6702AR
Wavelength (nm) 635 650 670
Diode structure index guided index guided index guided
Classification class IIIa (< 5mW) class IIIa (< 5mW) class IIIa (< 5mW)
Output power (mW) 1.5 - 2.0 1.5 - 2.0 1.5 - 2.0
Operating current
(mA) < 60 (or < 80) < 45 < 75
Operating voltage
(VDC) 2.8 - 4.5 2.8 - 6.0 2.8 - 4.5
Drive circuit automatic power control automatic power
control automatic power
control
Protections short circuit & reverse
polarity protections short circuit & reverse
polarity protections short circuit & reverse
polarity protections
Optics singlet plastic collimating
lens singlet plastic
collimating lens singlet plastic
collimating lens
Focus adjustable adjustable adjustable
Beam size @ aperture 3.5 3.5 3.5
Beam size @ 7 m (mm) dia. 5 ± 1 dia. 5 ± 1 dia. 5 ± 1
Beam divergence
(mrad) < 0.5 < 0.5 < 0.5
Beam profile circular circular circular
Connector wires with strain releaser wires with strain
releaser wires with strain
releaser
Weight (gm) 23 23 23
Operating temperature
(oC) -10 to 50 -10 to 50 -10 to 50
Storage temperature
(oC) - 40 to 85 - 40 to 85 - 40 to 85
Dimensions (mm) 11.5 (Dia.) x 40 (L) 11.5 (Dia.) x 40 (L) 11.5 (Dia.) x 40 (L)
NOTES:
1. We offer the 650nm laser diode module with the same low price of 670nm laser
diode module. For your information, the 650nm laser is 3.4 time brighter than the
670nm laser.
2. Fixed focus for LMC- laser modules is available, if specified.
3. The LM- series laser diode modules are designated solely as OEM components for
Specifications of LMC- Compact Laser Diode Modules
incorporation into customer's end products. Therefore, they do not comply with
the appropriate requirements of FDA 21CFR, section 1040.10 and 1040.11 for complete
laser products.
Specifications of Class II LMC- Compact Laser Diode Modules
Model No. LMC6352AR-A (or B) LMC6502AR LMC6702AR
Wavelength (nm) 635 650 670
Diode structure index guided index guided index guided
Classification class IIIa (< 5mW) class IIIa (< 5mW) class IIIa (< 5mW)
Output power (mW) 0.7-0.99 0.7-0.99 0.7-0.99
Operating current
(mA) < 60 (or < 80) < 45 < 75
Operating voltage
(VDC) 2.8 - 4.5 2.8 - 6.0 2.8 - 4.5
Drive circuit automatic power control automatic power
control automatic power
control
Protections short circuit & reverse
polarity protections short circuit & reverse
polarity protections short circuit & reverse
polarity protections
Optics singlet plastic collimating
lens singlet plastic
collimating lens singlet plastic
collimating lens
Focus adjustable adjustable adjustable
Beam size @ aperture 3.5 3.5 3.5
Beam size @ 7 m (mm) dia. 5 ± 1 dia. 5 ± 1 dia. 5 ± 1
Beam divergence
(mrad) < 0.5 < 0.5 < 0.5
Beam profile circular circular circular
Connector wires with strain releaser wires with strain
releaser wires with strain
releaser
Weight (gm) 23 23 23
Operating temperature
(oC) -10 to 50 -10 to 50 -10 to 50
Storage temperature
(oC) - 40 to 85 - 40 to 85 - 40 to 85
Dimensions (mm) 11.5 (Dia.) x 40 (L) 11.5 (Dia.) x 40 (L) 11.5 (Dia.) x 40 (L)
NOTES:
1. We offer the 650nm laser diode module with the same low price of 670nm laser
diode module. For your information, the 650nm laser is 3.4 time brighter than the
670nm laser.
2. Fixed focus for LMC- laser modules is available, if specified.
3. The LM- series laser diode modules are designated solely as OEM components for
incorporation into customer's end products. Therefore, they do not comply with
the appropriate require ments of FDA 21CFR, section 1040.10 and 1040.11 for complete
laser products.
If you have any comments or request for detail product information, please fill the
Information Request Form or mail to: info@lasermate.com.
Specifications of LMC- Compact Laser Diode Modules
Specifications of LMP- Compact Laser Diode Modules
Specifications of Class IIIa LMP- Compact Laser Diode Modules
Model No. LMP6353AR-A (or B) LMP6503AR LMP6703AR
Wavelength (nm) 635 650 670
Diode structure index guided index guided index guided
Classification class IIIa (< 5mW) class IIIa (< 5mW) class IIIa (< 5mW)
Output power (mW) 2.1 - 3.0 2.1 - 3.0 2.1 - 3.0
Operating current
(mA) < 60 (or < 80) < 45 < 75
Operating voltage
(VDC) 2.8 - 4.5 2.8 - 6.0 2.8 - 4.5
Drive circuit automatic power control automatic power
control automatic power
control
Protections short circuit & reverse
polarity protections short circuit & reverse
polarity protections short circuit & reverse
polarity protections
Optics singlet plastic collimating
lens singlet plastic
collimating lens singlet plastic
collimating lens
Focus adjustable adjustable adjustable
Beam size @ aperture 4.5 4.5 4.5
Beam size @ 7 m (mm) 4 x 7 ± 1 4 x 7 ± 1 4 x 7 ± 1
Beam divergence
(mrad) < 0.5 < 0.5 < 0.5
Beam profile elliptical elliptical elliptical
Connector wires with strain releaser wires with strain
releaser wires with strain
releaser
Weight (gm) 23 23 23
Operating temperature
(oC) -10 to 50 -10 to 50 -10 to 50
Storage temperature
(oC) - 40 to 85 - 40 to 85 - 40 to 85
Dimensions (mm) 11.5 (Dia.) x 40 (L) 11.5 (Dia.) x 40 (L) 11.5 (Dia.) x 40 (L)
NOTES:
1. We offer the 650nm laser diode module with the same low price of 670nm laser
diode module. For your information, the 650nm laser is 3.4 time brighter than the
670nm laser.
2. Fixed focus for LMP- laser modules is available, if specified.
3. The LM- series laser diode modules are designated solely as OEM components for
Specifications of LMC- Compact Laser Diode Modules
incorporation into customer's end products. Therefore, they do not comply with
the appropriate requirements of FDA 21CFR, section 1040.10 and 1040.11 for complete
laser products.
Specifications of Class II LMP- Compact Laser Diode Modules
Model No. LMP6351AR-A (or B) LMP6501AR LMP6701AR
Wavelength (nm) 635 650 670
Diode structure index guided index guided index guided
Classification class II (< 1mW) class II (< 1mW) class II (< 1mW)
Output power (mW) 0.7-0.99 0.7-0.99 0.7-0.99
Operating current
(mA) < 60 (or < 80) < 45 < 75
Operating voltage
(VDC) 2.8 - 4.5 2.8 - 6.0 2.8 - 4.5
Drive circuit automatic power control automatic power
control automatic power
control
Protections short circuit & reverse
polarity protections short circuit & reverse
polarity protections short circuit & reverse
polarity protections
Optics singlet plastic collimating
lens singlet plastic
collimating lens singlet plastic
collimating lens
Focus adjustable adjustable adjustable
Beam size @ aperture 4.5 4.5 4.5
Beam size @ 7 m (mm) 4 x 7 ± 1 4 x 7 ± 1 4 x 7 ± 1
Beam divergence
(mrad) < 0.5 < 0.5 < 0.5
Beam profile elliptical elliptical elliptical
Connector wires with strain releaser wires with strain
releaser wires with strain
releaser
Weight (gm) 23 23 23
Operating temperature
(oC) -10 to 50 -10 to 50 -10 to 50
Storage temperature
(oC) - 40 to 85 - 40 to 85 - 40 to 85
Dimensions (mm) 11.5 (Dia.) x 40 (L) 11.5 (Dia.) x 40 (L) 11.5 (Dia.) x 40 (L)
NOTES:
1. We offer the 650nm laser diode module with the same low price of 670nm laser
diode module. For your information, the 650nm laser is 3.4 time brighter than the
670nm laser.
2. Fixed focus for LMP- laser modules is available, if specified.
3. The LM- series laser diode modules are designated solely as OEM components for
incorporation into customer's end products. Therefore, they do not comply with
the appropriate require ments of FDA 21CFR, section 1040.10 and 1040.11 for complete
laser products.
If you have any comments or request for detail product information, please fill the
Information Request Form or mail to: info@lasermate.com.
Specifications of LMC- Compact Laser Diode Modules
Specifications of LMG- Compact Laser Diode Modules
Specifications of Class IIIa LMG- Compact Laser Diode Modules
Model No. LMG6353AR-A (or B) LMG6503AR LMG6703AR
Wavelength (nm) 635 650 670
Diode structure index guided index guided index guided
Classification class IIIa (< 5mW) class IIIa (< 5mW) class IIIa (< 5mW)
Output power (mW) 3.1 - 4.0 3.1 - 4.0 3.1 - 4.0
Operating current
(mA) < 60 (or < 80) < 45 < 75
Operating voltage
(VDC) 2.8 - 4.5 2.8 - 6.0 2.8 - 4.5
Drive circuit automatic power control automatic power
control automatic power
control
Protections short circuit & reverse
polarity protections short circuit & reverse
polarity protections short circuit & reverse
polarity protections
Optics 3-element glass collimating
lens with antireflection
coating
3-element glass
collimating lens with
antireflection coating
3-element glass
collimating lens with
antireflection coating
Focus adjustable adjustable adjustable
Beam size @ aperture 4.5 4.5 4.5
Beam size @ 7 m (mm) 5 x 8 ± 1 5 x 8 ± 1 5 x 8 ± 1
Beam divergence
(mrad) 0.35 x 0.45 0.35 x 0.45 0.35 x 0.45
Beam profile elliptical elliptical elliptical
Connector wires with strain releaser wires with strain
releaser wires with strain
releaser
Weight (gm) 23 23 23
Operating
temperature (oC) -10 to 50 -10 to 50 -10 to 50
Storage temperature
(oC) - 40 to 85 - 40 to 85 - 40 to 85
Dimensions (mm) 11.5 (Dia.) x 40 (L) 11.5 (Dia.) x 40 (L) 11.5 (Dia.) x 40 (L)
Specifications of LMC- Compact Laser Diode Modules
NOTES:
1. We offer the 650nm laser diode module with the same low price of 670nm laser diode module. For your
information, the 650nm laser is 3.4 time brighter than the 670nm laser.
2. Fixed focus for LMG- laser modules is available, if specified.
3. The LM- series laser diode modules are designated solely as OEM components for incorporation into
customer's end products. Therefore, they do not comply with the appropriate requirements of FDA 21CFR,
section 1040.10 and 1040.11 for complete laser products.
Specifications of Class II LMG- Compact Laser Diode Modules
Model No. LMG6351AR-A (or B) LMG6501AR LMG6701AR
Wavelength (nm) 635 650 670
Diode structure index guided index guided index guided
Classification class II (< 1mW) class II (< 1mW) class II (< 1mW)
Output power (mW) 0.7-0.99 0.7-0.99 0.7-0.99
Operating current
(mA) < 60 (or < 80) < 45 < 75
Operating voltage
(VDC) 2.8 - 4.5 2.8 - 6.0 2.8 - 4.5
Drive circuit automatic power control automatic power
control automatic power
control
Protections short circuit & reverse
polarity protections short circuit & reverse
polarity protections short circuit & reverse
polarity protections
Optics singlet plastic collimating
lens singlet plastic
collimating lens singlet plastic
collimating lens
Focus adjustable adjustable adjustable
Beam size @ aperture 4.5 4.5 4.5
Beam size @ 7 m (mm) 4 x 7 ± 1 4 x 7 ± 1 4 x 7 ± 1
Beam divergence
(mrad) < 0.5 < 0.5 < 0.5
Beam profile elliptical elliptical elliptical
Connector wires with strain releaser wires with strain
releaser wires with strain
releaser
Weight (gm) 23 23 23
Operating
temperature (oC) -10 to 50 -10 to 50 -10 to 50
Storage temperature
(oC) - 40 to 85 - 40 to 85 - 40 to 85
Dimensions (mm) 11.5 (Dia.) x 40 (L) 11.5 (Dia.) x 40 (L) 11.5 (Dia.) x 40 (L)
NOTES:
1. We offer the 650nm laser diode module with the same low price of 670nm laser diode module. For your
information, the 650nm laser is 3.4 time brighter than the 670nm laser.
2. Fixed focus for LMG- laser modules is available, if specified.
3. The LM- series laser diode modules are designated solely as OEM components for incorporation into
Specifications of LMC- Compact Laser Diode Modules
customer's end products. Therefore, they do not comply with the appropriate requirements of FDA 21CFR,
section 1040.10 and 1040.11 for complete laser products.
If you have any comments or request for detail product information, please fill the
Information Request Form or mail to: info@lasermate.com.
Return to Lasermate Corporation Home Page
Specifications of LMC- Compact Laser Diode Modules
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Miniature Laser Diode Modules - PL-Series
The PL laser diode module is designed for OEM applications with the lowest cost, miniature size, and beam
focusing requirements. Additional heat sink may be needed for PL-series laser module under continuously
operating for a long period of time.
Designed for the OEM, it is ideal for a wide range of low power laser applications, such as general sighting,
leveling, and positioning.
Features
Basic
Performance
and the
Lowest Cost
●
Miniature
Design: 10.5
Dia. x 17 mm
L or 10.5 Dia.
x 21 mm L
●
Adjustable
Focus
●
Circular and
Elliptic Beam
Shapes
Available
●
Automatic
Power
Control and
Automatic
Current
Control
Circuits
Available
●
PL-Series Laser Diode Modules
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Specifications of PLC- Laser Diode Modules
Model No.: PLC635X1A X2PLC650X1A X2PLC670X1A X2PLC780X1A X2PLC808X1A X2
Wavelength (nm) 635 650 670 780 808
Diode structure Index guided
Optical output
power (mW) 0.7-0.99 (X1=1); 1.2-2 (X1=2)
Laser class Class II (X1=1); Class IIIa (X1=2) Class IIIb
Typ. operating
current (mA) 40 30 35 30 25
Operating voltage
(VDC) 3 - 4.5 (X2= E & W); 4.5 (X2 = N); 3-5 (X2 = K & L); 3-9 (X2 =G)
Drive circuit Stanadrd: APC (X2=E);
Optional: APC with limited current (X2=N); regulated APC (X2=W, K & G); regulated
APC with limited current (X2= L)
Optics Singlet plastic collimating lens
Beam divergence
(mrad) < 0.5
Beam size @ 7 m
(mm) Dia. 5
Beam profile circular
Focus Adjustable
Operating
temperature (oC) -10 to +40
Connector Black wire - & red wire +
Dimensions (mm) Dia. 10.5 x L. 19.5 (X2= E, K & N); Dia. 10.5 x L. 31.5 (X2 = W, L & G)
Weight (gm) 12
Option Cross hair optics & 2.5 degree full fan angle line generating optics
NOTES:
1. We offer the 650nm laser diode module with the same low price of 670nm laser diode module. For your
information, the 650nm laser
is 3.4 time brighter than the 670nm laser.
2. Fixed focus for PLC- laser modules is available, if specified.
3. The PLC- series laser diode modules are designated solely as OEM components for incorporation into
customer's end products.
Therefore, they do not comply with the appropriate require ments of FDA 21CFR, section 1040.10 and 1040.11
for complete laser products.
Specifications of LMC- Compact Laser Diode Modules
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Specifications of PLP- Laser Diode Modules
Model No.: PLP635X1A
X2
PLP650X1A
X2
PLP670X1A
X2
PLP780X1A
X2
PLP808X1A
X2
Wavelength (nm) 635 650 670 780 808
Diode structure Index guided
Optical output power
(mW) 0.7-0.99 (X1=1); 2.1-3 (X1=3)
Laser class Class II (X1=1); Class IIIa (X1=3) Class IIIb
Typ. operating current
(mA) 40 30 35 30 25
Operating voltage (VDC) 3 - 4.5 (X2= E & W); 4.5 (X2 = N); 3-5 (X2 = K & L); 3-9 (X2 =G)
Drive Circuit Standard: APC (X2=E);
Optional: APC with limited current (X2=N); regulated APC (X2=W, K & G);
regulated APC with limited current (X2= L)
Optics Singlet plastic collimating lens with AR coating
Beam divergence (mrad) < 0.5
Beam size @ 7 m (mm) 3.4 x 5.8
Beam profile elliptic
Focus Adjustable
Operating temperature
(oC) -10 to +40
Connector Black wire - & red wire +
Dimensions (mm) Dia. 10.5 x L. 15 (X2= E, K & N); Dia. 10.5 x L. 27 (X2 = W, L & G)
Weight (gm) 12
Option Cross hair optics (9 degree) & line generating optics (2.5 degree)
NOTES:
1. We offer the 650nm laser diode module with the same low price of 670nm laser diode module.
For your information, the 650nm laser is 3.4 time brighter than the 670nm laser.
2. Fixed focus for PLP- laser modules is available, if specified.
3. The PLP- series laser diode modules are designated solely as OEM components for incorporation into
customer's end products.
Therefore, they do not comply with the appropriate require ments of FDA 21CFR, section 1040.10 and 1040.11
for complete laser products.
Specifications of LMC- Compact Laser Diode Modules
Compact Laser Diode Modules with Cross Hair Profile-
LM-Series
The LM laser diode modules with cross hair profile are designed for OEM applications with the lower cost,
compact size, and beam focusing requirements. Designed for the OEM, it is ideal for a wide range of low power
laser applications, such as alignment and positioning.
Features
Good Performance and the Lower Cost●
Wide Range of Wavelength 635nm - 830nm● Beam Profile: "+" cross hair● Beam Thickness: <1mm● Beam Length: 15.7cm @ 1m distance● Full Fan Angle: 9 deg.●
Compact Design: 11.5 Dia. x 40 mm L.●
Adjustable Focus●
Focus Range from 6 cm or 7 cm to Infinity●
Regulated Automatic Power Control●
Operating Voltage 2.7 - 6.0 VDC●
If you have any comments or request for detail product information, please fill the
Information Request Form or mail to: info@lasermate.com.
Return to Lasermate Corporation Home Page
LM-Series Laser Diode Modules
High Performance Cross Hair Generating Laser Diode
Modules - LTG Series
The high performance LTG- series laser diode modules with cross hair profile are a complete laser diode system
designed for OEM applications with fine cross hair profile, adjustable output power, and beam focusing
requirements. It is designed as the high quality and performance laser diode module for industrial heavy duty
users.
Designed for the OEM, it is ideal for a wide range of low power laser applications, especially in continuous long
time usage such as alignment and positioning.
Features
High Performance and Low Cost●
Wide Range of Wavelength (635nm - 850nm) and Output power (0.9mW - 50mW)● Beam Profile: "+" cross hair● Beam Thickness: <1mm● Beam Length: 15.7cm @ 1m distance● Full Fan Angle: 9 deg.●
Adjustable Optical Output Power and Automatic Power Control●
Soft-start, Short-circuit, and Reverse-polarity Protections●
Adjustable Focus●
Super Fine Pitch (0.25mm) for Precision Focusing●
Standard English Dimension (Dia. = 0.5 in., L = 2.0 in.)●
Green LED Safety Indicator●
Model No. LTG-6 704 604 607 6015 6035 504 507 5015 354 357-AH-9X
Wavelength (nm) 670 660 660 660 660 650 650 650 635 635
LT-Series Laser Diode Modules
Max. Diode Output Power (mW) 5 5 10 20 50 5 10 20 5 10
Max.Optical Output Power(mW) 4 4 7 15 35 4 7 15 4 7
Model No. LT G8084 G80815 G83020-AH
Wavelength (nm) 808 808 830
Max. Diode Output Power (mW) 5 30 40
Max.Optical Output Power(mW) 4 15 20
If you have any comments or request for detail product information, please fill the
Information Request Form or mail to: info@lasermate.com.
Return to Lasermate Corporation Home Page
LT-Series Laser Diode Modules
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Green, Red, & Infrared Laser Diode Modules | Laser Diodes | Laser Accessories| Laser Products | Electroluminescent
Products |
O.E.M. Diode Pumped Solid-State Green Lasers
GM- series green laser modules use laser diode (808nm) pumped Yttrium Orthovanadate (Nd:YVO4)
crystal coupled with Pottasium Titanyl Phosphate (KTP) as a frequency doubler generating 532 nm
(green) and 1064nm (infrared). This method is gaining an increasing popularity for low power applications
because of its high absorption and emission efficiencies. Lasermate Corporation provides a variety of
design with the output power from 1mW to 25mW for 532nm and from 20mW to 100 mW for 1064 nm.
Please see below for more information.
Options Features
GMA- Series Green Laser Module
Adjustable focus, from 1mW to 25mW output power,
compact dimensions, 5VDC operating voltage, CW
mode, ACC circuit with soft-start protection, with
mounting screw holes, analog & TTL modulation
available, low cost
GMC- Series Green Laser Module
Fixed focus, compact dimensions, from 1mW to 25mW
output power, 5VDC operating voltage, CW mode, ACC
circuit with soft-start protection, analog & TTL
modulation available, lower cost
GMP- Series Green Laser Module
Fixed focus, miniature dimensions, from 1mW to 5mW
output power, 3VDC operating voltage, ACC circuit with
pulsed function, <1KHz, designed for laser pointer
applications, lowest cost
GMS- Series Green Laser Module
Fixed focus, compact dimensions, from 1mW to 25mW
output power, 5VDC operating voltage, CW mode, ACC
circuit with soft-start protection, with mounting screw
holes, analog & TTL modulation available, low cost
GMS- Series Green Laser System
Fixed focus, from 5mW to 25mW output power, 5VDC
operating voltage, CW mode, ACC circuit, with
mounting screw holes, cooling fan, 5V DC-Jack
connector for AC adapter plug-in, analog & TTL
modulation available
Diode Pumped Solid-State Green Laser
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GMC- Series 532 nm DPSS Green Laser Modules
GMC- Series 532 nm DPSS Green Laser Modules with CW Mode
GMC- Series 532 nm DPSS Green Laser Modules with TTL
Modulations
GMC- Series 532 nm DPSS Green Laser Modules with Analog
Modulations
Specifications of GMC- Series 532 nm DPSS Green Laser Modules
Model No. GMC-532-XF5
Wavelength 532 nm
Mode TEMoo
Output power (mW) @ 5VDC,
25 oC0.5-0.99
(X=1)
1.2-3
(X=3)
3-5
(X=5)
8-10
(X=10)
11-15
(X=15)
16-20
(X=20)
21-25
(X=25)
Operating Current (A) <0.45 <0.65 <0.75
Operating Voltage 5 +/- 0.5VDC
Circuit Design ACC with soft-start protection
Operation Mode CW
M2< 2
Linewidth < 0.1 nm
Specifications of 532 nm Diode Pumped Solid State Green Laser Modules
Polarization Linear
Beam Divergence <1.4 mrad
Beam Diameter (1/e2)< 1 mm
Stability* ≤ ±20% @ 25 ± 3 oC
Connector Black (-) & red (+) wires
Storage Temperature 10 - 50 oC
Optimum Operating
Temperature 22-28 oC
MTTF** 5,000 hrs
Dimensions (LxWxH) Dia. 20 x L. 58.5 mm (green laser head)
32 x 16 mm (driver circuit board)
25 x 23 x 16 mm (heat sink)
43 x 43 mm (soft-start protection PCB)
* Additional heat sink or cooling fan may be needed to stabilize the output power of laser module.
** MTTF (mean time to failure) is based on the MTTF rating of high power 808nm laser diode used from the laser diode
manufacturer.
The GMC-series 532 nm Diode Pumped Solid State Green Laser Modules, which use laser diode pumped Nd:YVO4 crystal
coupled with KTP as a frequency doubbler, are designated solely as OEM components for incorporation into the customer's end
products. Therefore, they do not comply with the appropriate requirements of FDA 21CFR, section 1040.10 and 1040.11 for
complete laser products.
TTL Modulation of 532nm DPSS Green Laser Module
Model No. GMC-532-XF5-T
Wavelength 532 nm
Mode TEMoo
Output power (mW) @ 5VDC,
25 oC0.5-0.99
(X=1)
1.2-3
(X=3)
3-5
(X=5)
8-10
(X=10)
11-15
(X=15)
16-20
(X=20)
21-25
(X=25)
Operating Current (A) <0.45 <0.65 <0.75
Operating Voltage 5 VDC
Control Voltage Max. 5VDC
Circuit Design ACC with modulator and soft-start protection
Operation Mode TTL
Frequency From DC to 10KHz
M2< 2
Linewidth < 0.1 nm
Polarization Linear
Beam Divergence <1.4 mrad
Beam Diameter (1/e2)< 1 mm
Stability* ≤ ±20% @ 25 ± 3 oC
Connector Yellow (control input), Black (-) & red (+) wires
Storage Temperature 10 - 50 oC
Optimum Operating
Temperature 22-28 oC
MTTF** 5,000 hrs
Dimensions (LxWxH) Dia. 20 x L. 58.6 mm (green laser head)
50 x 50 mm (driver circuit board)
25 x 23 x 16 mm (heat sink)
Specifications of 532 nm Diode Pumped Solid State Green Laser Modules
* Additional heat sink or cooling fan may be needed to stabilize the output power of laser module.
** MTTF (mean time to failure) is based on the MTTF rating of high power 808nm laser diode used from the laser diode
manufacturer.
The GMC-series 532 nm Diode Pumped Solid State Green Laser Modules, which use laser diode pumped Nd:YVO4 crystal
coupled with KTP as a frequency doubbler, are designated solely as OEM components for incorporation into the customer's end
products. Therefore, they do not comply with the appropriate requirements of FDA 21CFR, section 1040.10 and 1040.11 for
complete laser products.
Analog Modulation of 532nm DPSS Green Laser Module
Model No. GMC-532-XF5-M
Wavelength 532 nm
Mode TEMoo
Output power (mW) @ 5VDC,
25 oC0.5-0.99
(X=1)
1.5-3
(X=3)
3-5
(X=5)
8-10
(X=10)
11-15
(X=15)
16-20
(X=20)
21-25
(X=25)
Operating Current (A) <0.45 <0.65 <0.75
Operating Voltage 5 VDC
Control Voltage Max. 5VDC
Circuit Design ACC with modulator and soft-start protection
Operation Mode Analog
Frequency From DC to 10KHz
M2< 2
Linewidth < 0.1 nm
Polarization Linear
Beam Divergence <1.4 mrad
Beam Diameter (1/e2)< 1 mm
Stability* ≤ ±20% @ 25 ± 3 oC
Connector Yellow (control input), Black (-) & red (+) wires
Storage Temperature 10 - 50 oC
Optimum Operating
Temperature 22-28 oC
MTTF** 5,000 hrs
Dimensions (LxWxH) Dia. 20 x L. 58.6 mm (green laser head)
50 x 50 mm (driver circuit board)
25 x 23 x 16 mm (heat sink)
* Additional heat sink or cooling fan may be needed to stabilize the output power of laser module.
** MTTF (mean time to failure) is based on the MTTF rating of high power 808nm laser diode used from the laser diode
manufacturer.
The GMC-series 532 nm Diode Pumped Solid State Green Laser Modules, which use laser diode pumped Nd:YVO4 crystal
coupled with KTP as a frequency doubbler, are designated solely as OEM components for incorporation into the customer's end
products. Therefore, they do not comply with the appropriate requirements of FDA 21CFR, section 1040.10 and 1040.11 for
complete laser products.
Note: The specification is subject to change without notice.
If you have any comments or request for detail product information, please fill the
Quotation & Information Request Form or mail to: info@lasermate.com.
HOME | PRODUCT LIST | ORDER FORM | QUO & INFO REQUEST |
Specifications of 532 nm Diode Pumped Solid State Green Laser Modules
Specifications of 532 nm Diode Pumped Solid State Green Laser Modules
VCSELs | Communication Lasers | Photodiode Receivers | Fiber Optical Transceivers | Book Store | On Sale Items |
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GMP- Series 532 nm DPSS Green Laser Modules
Specifications of GMP- Series 532 nm DPSS Green Laser Modules
Model No. GMP-532-XF3
Wavelength 532 nm
Mode TEMoo
Output power (mW) @ 5VDC, 25
oC0.5-0.99
(X=1)
1.2-3
(X=3)
3-5
(X=5)
Operating Current (A) <0.45
Operating Voltage 3V DC
Circuit Design ACC with pulse function
Operation Mode Pulsed
M2< 2
Linewidth < 0.1 nm
Polarization Linear
Beam Divergence <1.4 mrad
Beam Diameter (1/e2)< 1 mm
Frequency <1KHz
Stability* ≤ ±20% @ 25 ± 3 oC
Connector Standard: Black (-) & red (+) wires
Specifications of GMP- Series 532 nm DPSS Green Laser Modules
Storage Temperature 10 - 50 oC
Optimum Operating Temperature 22 - 28 oC
Dimensions (LxWxH) Dia. 12mm x L. 40mm (green laser head)
16 x 8 mm (driver circuit board)
* Additional heat sink or cooling fan may be needed to stabilize the output power of laser module.
The GMP-series 532 nm Diode Pumped Solid State Green Laser Modules, which use laser diode pumped Nd:YVO4 crystal
coupled with KTP as a frequency doubbler, are designated solely as OEM components for incorporation into the customer's end
products. Therefore, they do not comply with the appropriate requirements of FDA 21CFR, section 1040.10 and 1040.11 for
complete laser products.
If you have any comments or request for detail product information, please fill the
Quotation & Information Request Form or mail to: info@lasermate.com.
HOME | PRODUCT LIST | ORDER FORM | QUO & INFO REQUEST |
Specifications of GMP- Series 532 nm DPSS Green Laser Modules
VCSELs | Communication Lasers | Photodiode Receivers | Fiber Optical Transceivers | Book Store | On Sale Items |
Green, Red, & Infrared Laser Diode Modules | Laser Diodes | Laser Accessories| Laser Products | Electroluminescent Products |
O.E.M. GMS- Series Diode Pumped Solid-State Green Lasers
GMS- Series Diode Pumped Solid-State Green Laser Module
GMS- Series Analog Modulation of Diode Pumped Solid-State Green Laser
Module
GMS- Series TTL Modulation of Diode Pumped Solid-State Green Laser
Module
GMS- Series OEM Diode Pumped Solid-State Green Laser System
Diode Pumped Solid-State Green Laser Module
Model No.
GMS1-038 -01 -03 -05 -10 -15 -20 -25
Wavelength 532 nm
Diode Pumped Solid-State Green Laser
Output Power @ 5V
DC 0.5-0.99mW 1.2-3mW 3-5mW 8-10mW 12-15mW 16-20mW 21-25mW
Mode TEMoo
Linewidth <0.1nm
Polarization Linear
Beam Divergence 1.4 mrad
Beam Diameter 1 mm
Operating Voltage 5V DC
Operating Mode CW
Operating Current < 0.45 A < 0.45 A < 0.65 A < 0.65 A < 0.75 A < 0.75 A < 0.75 A
Connector Red: + ; Black: -
Storage Temperature 10 - 50 oC
Optimum Operating
Temperature 20 - 30 oC
Dimensions 50 x 21 x 21 mm (Head; L X W X H) + 150 mm (wires) + 35 x 14 mm (PCB) + 25 x 23 x 16 mm (heat
sink) + 190 mm (wires)
Modulatable Diode Pumped Solid-State Green Laser Module
Analog Modulation of Diode Pumped Solid-State Green Laser Module
Diode Pumped Solid-State Green Laser
Model No.
GMS1-038 -01M -03M -05M -10M -15M -20M -25M
Wavelength 532 nm
Output Power @ 5V DC 0.5-0.99mW 1.2-3mW 3-5mW 8-10mW 12-15mW 16-20mW 21-25mW
Mode TEMoo
Linewidth <0.1nm
Polarization Linear
Beam Divergence 1.4 mrad
Beam Diameter 1 mm
Operation Mode Analog modulation
Operating Voltage 5V DC
Control Voltage Max. 5V DC
Operating Current < 0.45 A < 0.45 A < 0.65 A < 0.65 A < 0.75 A < 0.75 A < 0.75 A
Connector 3 wires Yellow: control; Red: + ; Black: -
Storage Temperature 10 - 50 oC
Optimum Operating
Temperature 20 - 30 oC
Dimensions 50 x 21 x 21 mm (Head; L X W X H) + 150 mm (wires) + 35 x 14 mm (PCB) + 25 x 23 x 16 mm (heat sink)
+ 190 mm (wires)
TTL Modulation of Diode Pumped Solid-State Green Laser Module
Diode Pumped Solid-State Green Laser
Model No.
GMS1-038 -01T -03T -05T -10T -15T -20T -25T
Wavelength 532 nm
Output Power @ 5V DC 0.5-0.99mW 1.2-3mW 3-5mW 8-10mW 12-15mW 16-20mW 21-25mW
Mode TEMoo
Linewidth <0.1nm
Polarization Linear
Beam Divergence 1.4 mrad
Beam Diameter 1 mm
Operation Mode TTL modulation
Operating Voltage 5V DC
Control Voltage Max. 5V DC
Operating Current < 0.45 A < 0.45 A < 0.65 A < 0.65 A < 0.75 A < 0.75 A < 0.75 A
Connector 3 wires Yellow: control; Red: + ; Black: -
Storage Temperature 10 - 50 oC
Optimum Operating
Temperature 20 - 30 oC
Dimensions 50 x 21 x 21 mm (Head; L X W X H) + 150 mm (wires) + 35 x 14 mm (PCB) + 25 x 23 x 16 mm (heat sink)
+ 190 mm (wires)
OEM Diode Pumped Solid-State Green Laser System
Features:
Soft-start protection● AC adapter included● No additional heat sink needed● Easily to be incorporated into your laser products
Model No. GMS-05A GMS-10A GMS-15A GMS-20A GMS-25A
Output Power 3-5mW 8-10mW 12-15mW 16-20mW 21-25mW
Mode TEMoo
●
Diode Pumped Solid-State Green Laser
Linewidth <0.1nm
Polarization Linear
Beam Divergence 1.4 mrad
Beam Diameter @ Aperture 1 mm
Operating Voltage 5V DC
Operating Current <0.45 A <0.65 A <0.75 A <0.75A <0.75 A
Connector DC-jack
Storage Temperature 10 - 50 oC
Optimum Operating
Temperature 20 - 30 oC
Dimensions (LxWxH) 150 x 73 x 41 mm
Weight 620 +/- 10 g
Warranty* 6 months
* This warranty does not apply to the defects resulting from modification
or misuse of products.
Note: These diode pumped solid-state green lasers are designated solely as OEM components for incorporation into customer's
end products. Therefore, they do not comply with the appropriate requirments of FDA 21CFR, section 1040.10 and 1040.11
for complete laser products.
If you have any comments or request for detail product information, please fill the
Quotation & Information Request Form or mail to: info@lasermate.com.
HOME | PRODUCT LIST | ORDER FORM | QUO & INFO REQUEST |
Diode Pumped Solid-State Green Laser
VCSELs | Communication Lasers | Photodiode Receivers | Fiber Optical Transceivers | Book Store | On Sale Items |
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1064 nm Diode Pumped Solid-State Laser Module
Specifications of 1064 nm Diode Pumped Solid State Laser Modules
Model No. GMS-1064-10 GMS-1064-20 GMS-1064-50 GMS-1064-100
Wavelength 1064 nm
Mode TEMoo
Output power (mW) @ 5VDC, 25
oC8-10 18-20 45-50 90-100
Operating Current (A) <0.45 <0.45 <0.75 <0.75
Operating Voltage 4 - 5 VDC
Circuit Design ACC
Operation Mode CW
M2< 2
Linewidth < 0.1 nm
Photodiode Receivvers
Polarization Linear
Beam Divergence <1.4 mrad
Beam Diameter (1/e2)<1 mm
Noise <1% (10-10MHz)
Stability* +/- 10% @ 25 +/- 3 oC
Connector Black (-) & red (+) wires
Storage Temperature 10 - 50 oC
Optimum Operating Temperature 20 - 30 oC
Dimensions (LxWxH) 50 x 21 x 21 mm (green laser head) + 150 mm (wire) + 32 x 15 mm (driver circuit board) + 20 x 18 x 15 mm
(heat sink) + 150 mm (wire)
* Additional heat sink or cooling fan may be needed to stabilize the output power of laser module.
If you have any comments or request for detail product information, please fill the
Quotation & Information Request Form or mail to: info@lasermate.com.
Please update our new address/phone numbers!
Lasermate Corporation
20264 E. Carrey Road, Walnut, CA 91789, USA Tel: (909) 718-0999 Fax: (909)718-0998
HOME | PRODUCT LIST | ORDER FORM | QUO & INFO REQUEST |
Photodiode Receivvers
VCSELs | Communication Lasers | Photodiode Receivers | Fiber Optical Transceivers | Book Store | On Sale Items |
Green, Red, & Infrared Laser Diode Modules | Laser Diodes | Laser Accessories | Laser Products | Electroluminescent Products |
Overstock OEM Laser Modules with 25 % - 50%
Discount
LMP-6503AR: Grade A 650nm Laser, Class IIIa, APC circuit Only $29.00 each
Optional Accessories: Cross hair generating lens
LTC-6352AR: Grade A 635nm laser, Class IIIa (< 5 mW), APC circuit only $85.00
LTC-6502AR: Grade A 650nm laser, Class IIIa (< 5 mW), APC circuit SOLD OUT!
LTG-6354AR: Grade A 635nm laser, Class IIIa (< 5 mW), APC circuit only $90.00
LTG-6504AR: Grade A 650nm laser, Class IIIa (< 5 mW), APC circuitSOLD OUT!
Optional Accessories:
(1) Line generating lens ( 45, 60 & 90 deg. full fan angle)
(2) Cross hair generating lens
(3) Comapct beam expander
Specifications of Overstock LMP- Compact Laser Diode Modules
Model No. LMP6503AR
Wavelength (nm) 650
Diode structure index guided
Classification class IIIa (< 5mW)
Output power (mW) 2.1 - 3.0
Operating current (mA) < 45
Operating voltage (VDC) 2.8 - 6.0
Drive circuit automatic power control
Specifications of Overstock OEM Laser Diode Modules
Protections short circuit & reverse
polarity protections
Optics singlet plastic collimating
lens
Focus adjustable
Beam size @ aperture 4.5
Beam size @ 7 m (mm) 4 x 7 ± 1
Beam divergence (mrad) < 0.5
Beam profile elliptical
Connector wires with strain releaser
Weight (gm) 23
Operating temperature
(oC) -10 to 50
Storage temperature (oC) - 40 to 85
Dimensions (mm) 11.5 (Dia.) x 40 (L)
NOTES:
1. We offer the 650nm laser diode module with the same low price of 670nm laser
diode module. For your information, the 650nm laser is 3.4 time brighter than the 670nm laser.
2. Fixed focus for LMP- laser modules is available, if specified.
3. The LM- series laser diode modules are designated solely as OEM components for incorporation into
customer's end products.
Therefore, they do not comply with the appropriate requirements of FDA 21CFR, section 1040.10 and 1040.11
for complete laser products.
Specifications of Overstock LTC- Laser Diode Modules
Model No. LTC6352AR LTC6502AR SOLD OUT!
Wavelength (nm) 635 650
Diode structure index guided index guided
Classification class IIIa (< 5mW) class IIIa (< 5mW)
Output power (mW) 1.2 - 2.0 1.2 - 2.0
Operating current (mA) < 60 < 45
Operating voltage (VDC) 2.8 - 4.5 2.8 - 6.0
Drive circuit automatic current control automatic current control
Protections short circuit & reverse polarity
protections short circuit & reverse polarity
protections
Optics singlet plastic collimating lens singlet plastic collimating lens
Focus adjustable adjustable
Beam size @ 7 m (mm) dia. 5 ± 1 dia. 5 ± 1
Beam divergence (mrad) < 0.5 < 0.5
Beam profile circular circular
Connector wires (red + & black -) wires (red + & black -)
Specifications of Overstock OEM Laser Diode Modules
Wire length (cm) 10 10
Operating temperature (oC) -10 to 50 -10 to 50
Storage temperature (oC) - 40 to 85 - 40 to 85
Dimensions (inch) 0.5 (Dia.) x 2.0 (L) 0.5 (Dia.) x 2.0 (L)
For pricing or more information, please contact us by
e-mail: sales@lasermate.com or Tel: (909)718-0999.
Specifications of Overstock LTG- Laser Diode Modules
Model No. LTG6354AR LTG6504AR SOLD OUT!
Wavelength (nm) 635 650
Diode structure index guided index guided
Classification class IIIa (< 5mW) class IIIa (< 5mW)
Output power (mW) 2.5-3.5 2.5 - 3.5
Operating current (mA) < 60 < 45
Operating voltage (VDC) 2.8 - 4.5 2.8 - 6.0
Drive circuit automatic current control automatic current control
Protections short circuit & reverse polarity
protections short circuit & reverse polarity
protections
Optics 3-element glass collimating lens 3-element glass collimating lens
Focus adjustable adjustable
Beam size @ 7 m (mm) 5 x 8 ± 1 5 x 8 ± 1
Beam divergence (mrad) < 0.5 < 0.5
Beam profile elliptical elliptical
Connector wires (red + & black -) wires (red + & black -)
Wire length (cm) 10 10
Operating temperature (oC) -10 to 50 -10 to 50
Storage temperature (oC) - 40 to 85 - 40 to 85
Dimensions (inch) 0.5 (Dia.) x 2.0 (L) 0.5 (Dia.) x 2.0 (L)
Optional accessories
(1) Line generating lens (45, 60 & 90
deg. full fan angle)
(2) Cross hair generating lens
(3) Comapct beam expander
(1) Line generating lens (45, 60& 90
deg. full fan angle)
(2) Cross hair generating lens
(3) Comapct beam expander
For pricing or more information, please contact us by
e-mail: sales@lasermate.com or Tel: (909)718-0999.
NOTES:
1. We offer the 650nm laser diode module with the same low price of 670nm
laser diode module. For your information, the 650nm laser is 3.4 time
Specifications of Overstock OEM Laser Diode Modules
brighter than the 670nm laser.
2. The LT- series laser diode modules are designated solely as OEM
components for incorporation into customer's end products. Therefore, they
do not comply with the appropriate require ments of FDA 21CFR, section
1040.10 and 1040.11 for complete laser products.
If you have any comments or request for detail product information, please fill the
Quotation & Information Request Form or mail to: info@lasermate.com.
Please update our new address/phone numbers!
Lasermate Corporation
20264 E. Carrey Road, Walnut, CA 91789, USA Tel: (909) 718-0999 Fax: (909)718-0998
HOME | PRODUCT LIST | ORDER FORM | QUO & INFO REQUEST |
Specifications of Overstock OEM Laser Diode Modules
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Fiber Optics
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1310nm LASER SC/ST/FC DUPLEX SINGLE MODE OPTICAL TRANSCEIVERS
Data Rate from 155 Mbps to 1.25 Gbps with Loss Budget up to 33dB
How To Read Model No. C13F-W-X-Y-Z
C13F = Transmitter of Transceiver 1310 nm FP laser
W = Data rate 155 Mbps, 622Mbps, 1.25Gbps
X = Interface Connector Duplex SC, ST& FC connectors
Y = Output Power / Sensitivity Output Power: from -12 to 0 dBm / Sensitivity: from
<-18 to <-36 dBm
Z = Supply voltage +5V & +3.3V
Please click the Part No. for the more detail information.
Part No. Description
C13F-155-SCS5
(or -STS5/FCS5)
1310 nm FP laser, output power -12 - -8dBm, sensitivity
<-32dBm, supply voltage 5V, SC (or ST/FC) duplex single
mode 155 Mbps optical transceiver (loss budget 20dB)
C13F-155-SCS3
(or -STS3/FCS3)
1310 nm FP laser, output power -12 - -8dBm, sensitivity
<-32dBm, supply voltage 3.3V, SC (or ST/FC) duplex single
mode 155 Mbps optical transceiver (loss budget 20dB)
C13F-155-SCM5
(or -STM5/FCM5)
1310 nm FP laser, output power -6 - -4dBm, sensitivity
<-34dBm, supply voltage 5V, SC (or ST/FC) duplex single
mode 155 Mbps optical transceiver for Intermediate-Reach
(loss budget 28dB)
C13F-155-SCM3
(or -STM3/FCM3)
1310 nm FP laser, output power -6 - -4dBm, sensitivity
<-34dBm, supply voltage 3.3V, SC (or ST/FC) duplex single
mode 155 Mbps optical transceiver for Intermediate-Reach
(loss budget 28dB)
C13F-155-SCL5
(or -STL5/FCL5)
1310 nm FP laser, output power -3 - 0 dBm, sensitivity
<-36dBm, supply voltage 5V, SC (or ST/FC) duplex single
mode 155 Mbps optical transceiver for Long-Reach (loss
budget 33dB)
1310 nm FP laser 1x9 pins SC/ST/FC Duplex Single Mode Transceivers from 155 Mbps ATM to 1.25 Gbps Gigabit Ethernet
C13F-155-SCL3
(or -STL5/FCL3)
1310 nm FP laser, output power -3 - 0 dBm, sensitivity
<-36dBm, supply voltage 3.3V, SC (or ST/FC) duplex single
mode 155 Mbps optical transceiver for Long-Reach (loss
budget 33dB)
C13F-622-SCS5
(or -STS5/FCS5)
1310 nm FP laser, output power -12 - -8 dBm, sensitivity
<-30dBm, supply voltage 5V, SC (or ST/FC) duplex single
mode 622 Mbps optical transceiver (loss budget 18dB)
C13F-622-SCM5
(or -STM5/FCM5)
310 nm FP laser, output power -6 - -4 dBm, sensitivity
<-30dBm, supply voltage 5V, SC (or ST/FC) duplex single
mode 622 Mbps optical transceiver (loss budget 24dB)
C13F-1250-SCS5
(or -STS5/FCS5)
1310 nm FP laser, output power -12 - -8 dBm, sensitivity <-18
dBm, supply voltage 5V, SC (or ST/FC) duplex single mode
1.25 Gbps optical transceiver (loss budget 6dB)
C13F-1250-SCM5
(or -STM5/FCM5)
310 nm FP laser, output power -10 - -5 dBm, sensitivity <-18
dBm, supply voltage 5V, SC (or ST/FC) duplex single mode
1.25 Gbps optical transceiver (loss budget 8dB)
C13F-1250-SCL5
(or -STL5/FCL5)
1310 nm FP laser, output power -7 - -3 dBm, sensitivity <-18
dBm, supply voltage 5V, SC (or ST/FC) duplex single mode
1.25 Gbps optical transceiver (loss budget 11dB)
If you have any comments or request for detail product information, please fill the
Quotation & Information Request Form or mail to: info@lasermate.com.
Please update our new address/phone numbers!
Lasermate Corporation
20264 E. Carrey Road, Walnut, CA 91789, USA Tel: (909) 718-0999 Fax: (909)718-0998
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1310 nm FP laser 1x9 pins SC/ST/FC Duplex Single Mode Transceivers from 155 Mbps ATM to 1.25 Gbps Gigabit Ethernet
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1310 nm FP Laser 155Mbps 1x9-Pins Single Mode Optical Transceivers
How To Read Model No. C13F-155-X-Y-Z
C13F = Transmitter of Transceiver 1310 nm FP laser
155 = Data rate 155 Mbps
X = Interface Connector Duplex SC (X= SC), Duplex ST (X= ST), Duplex FC (X= SC)
Y = Output Power / Sensitivity -12 - -8 dBm/<-32 dBm (Y=S)
-6 - -4 dBm/<-34 dBm (Y=M)
-3 - 0 dBm/<-36 dBm (Y=L)
Z = Supply voltage +5V (Z=5) & +3.3V (Z=3)
FEATURES
Low Cost & High performance●
Transmitter: 1310 nm FP laser●
Data Rate: 155Mbps, NRZ●
Power Supply Voltage: Single +5V or
+3.3V
●
Electrical Interface: Differential PECL●
Pin-Configuration: Industrial standard 1x9
package footprint
●
Connector Interface: SC/ST/FC Duplex
Connector
●
Loss Budget: 20dB, 28dB & 33dB available
SM Fiber: 9/125µm
●
APPLICATIONS
FDDI●
ATM/SONET OC-3/SDH STM-1●
Active Star Network●
Point to Point Links●
Fast Ethernet ●
Absolute Maximum Ratings
Parameter Symbol Min. Typ. Max. Unit Note
Supply Voltage VCC 4.75 5 5.25 V + 5V version
1310 nm FP Laser 155Mbps Single Mode Optical Transceiver
3.0 3.3 3.5 + 3.3V version
Soldering Temperature --- - - 260 oC10 seconds on leads only
Operating
Temperature Top 0-70 oC
Storage Temperature Tst -40 -85 oC
Transmitter Specifications (0 oC<Top<70 oC, 4.75V <Vcc<5.25V or 3.0V<Vcc<3.5V)
Parameter Symbol Min. Typ. Max. Unit Notes
Electro-Optical Interface
Optical Output Power Po-3
-6
-12
--- 0
-4
-8
dBm Measured at the end of 100 cm length 9/125
µm step index fiber cable using 155Mbps,
PRBS 223-1 signal at the beginning of life.
Output Center Wavelength λ1280 1310 1350 nm
Output Spectrum Width ∆λ --- 2 6 nm RMS
Extinction Ratio ER10 --- --- dB
Output Eye Diagram Compliant with ITU recommendation G.957 mask patterns
Optical Rise Time (20%-80%) tr- - 3 ns Measured using 155Mbps 1010 signal.
Optical Fall Time (80%-20%) tf- - 3 ns Measured using 155Mbps 1010 signal.
Electrical Interface
Supply Voltage Vcc 4.75 5 5.25 V 5 V version
3.0 3.3 3.5 3.3 V version
Supply Current Icc -100 / 75 -mA 5 V version / 3.3 V version
Data Input Voltage-Low VIL VCC -1.95 -VCC -1.45 V VCC = 5.0V, TC = 25 oC
Data Input Voltage-High VIH VCC -1.17 -VCC -0.73 V
Rise Time Input Signal tr- - 3 ns 20%-80% Values
Fall Time Input Signal tf- - 3 ns 80%-20% Values
Receiver Specifications (0 oC<Top<70 oC, 4.75V <Vcc<5.25V or 3.0V<Vcc<3.5V)
Parameter Symbol Min. Typ. Max. Unit Notes
Electro-Optical Interface
Sensitivity --- --- --36/-34/-32 dBm BER=1.0X10-10, 155Mbps, PRBS 223-1
Saturation (Average Power) Psat 0 ---- dBm 155Mbps, 1010 signal
Signal Detect – Asserted Pa --- -30 --- dBm 155Mbps, 1010 signal.
1310 nm FP Laser 155Mbps Single Mode Optical Transceiver
Signal Detect – Deasserted Pd --- -33 --- dBm 155Mbps, 1010 signal.
Signal Detect – Hysteresis Phys -3-dB 155Mbps, 1010 signal.
Electrical Interface
Supply Voltage VCCRX 4.75 5 5.25 V 5V version
3.0 3.3 3.5 3.3V version
Power Supply Current ICCRX -140 / 75 -mA 5V version/3.3V version. The current
excludes the output load current.
Data Output Voltage- Low VOL VCCRX-1.81 -VCCRX-1.62 V Output load resistor (RL = 50 ohm) is
connected to VCCRX - 2.0V. VCCRX = 5.0V
(or 3.3V), Tc=25 oC
Data Output Voltage- High VOH VCCRX-1.03 -VCCRX-0.88 V
Rise Time Output Signal trout - - 1.6 ns 20%-80% Values
Fall Time Output Signal tfout - - 1.6 ns 80%-20% Values
Please click below for more information.
Pin Configuration
Package Dimensions
If you have any comments or request for detail product information, please fill the
Quotation & Information Request Form or mail to: info@lasermate.com.
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1310 nm FP Laser 155Mbps Single Mode Optical Transceiver
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1310 nm & 1550 nm Single Mode Optical Transceiver
Functional Block Diagram
PIN Assignment (Top View)
1310 nm & 1550 nm Single Mode Optical Transceiver functional block diagram, pinout & dimensions
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1310 nm & 1550 nm Single Mode Optical Transceiver functional block diagram, pinout & dimensions
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1310 nm FP Laser 622Mbps 1x9-Pins Single Mode Optical Transceivers
How To Read Model No. C13F-622-X-Y-Z
C13F = Transmitter of Transceiver 1310 nm FP laser
622 = Data rate 622 Mbps
X = Interface Connector Duplex SC (X= SC), Duplex ST (X= ST), Duplex FC (X= SC)
Y = Output Power / Sensitivity -12 - -8 dBm/<-30 dBm (Y=S)
-6 - -4 dBm/<-30 dBm (Y=M)
Z = Supply voltage +5V (Z=5)
FEATURES
Low Cost & High performance●
Transmitter: 1310 nm FP laser●
Data Rate: 622Mbps, NRZ●
Power Supply Voltage: Single +5V ●
Electrical Interface: Differential PECL●
Pin-Configuration: Industrial standard 1x9 package
footprint
●
Connector Interface: SC/ST/FC Duplex Connector●
Loss Budget: 18dB & 24dB available
SM Fiber: 9/125µm
●
APPLICATIONS
FDDI●
ATM/SONET OC-12/SDH STM-4●
Data Communication Network●
Point to Point Links●
Absolute Maximum Ratings
Parameter Symbol Min. Typ. Max. Unit Note
Supply Voltage VCC 4.75 5 5.25 V
Soldering Temperature --- - - 260 oC10 seconds on leads only
1310 nm FP Laser 155Mbps Single Mode Optical Transceiver
Operating Temperature Top 0-70 oC
Storage Temperature Tst -40 -85 oC
Transmitter Specifications (0 oC<Top<70 oC, 4.75V <Vcc<5.25V)
Parameter Symbol Min. Typ. Max. Unit Notes
Electro-Optical Interface
Optical Output Power Po-6
-12
--- -4
-8
dBm Measured at the end of 100 cm length 9/125 µm
step index fiber cable using 622Mbps, PRBS
223-1 signal at the beginning of life.
Output Center Wavelength λ1280 1310 1350 nm
Spectrum Width ∆λ --- 2 6 nm RMS
Extinction Ratio ER8.2 --- --- dB
Electrical Interface
Supply Voltage Vcc 4.75 5 5.25 V
Supply Current Icc -170 -mA
Data Input Voltage-Low VIL VCC
-1.95 -VCC
-1.45 VVCCTX = 5.0V, TC = 25 oC
Data Input Voltage-High VIH VCC
-1.17 -VCC
-0.73 V
Rise Time Input Signal tr- - 1 ns 20%-80% Values
Fall Time Input Signal tf- - 1 ns 80%-20% Values
Receiver Specifications (0 oC<Top<70 oC, 4.75V <Vcc<5.25V)
Parameter Symbol Min. Typ. Max. Unit Notes
Electro-Optical Interface
Sensitivity --- --- --30 dBm BER=1.0X10-12, 622Mbps, PRBS
223-1
Signal Detect –
Deasserted Pd -40 - -30 dBm 622Mbps, 1010 signal.
Signal Detect –
Hysteresis Phys 0.5 6 dB 622Mbps, 1010 signal.
Electrical Interface
Supply Voltage VCCRX 4.75 5 5.25 V
Power Supply Current ICCRX -110 -mA The current excludes the output load
current.
Data Output Voltage-
Low VOL VCCRX-1.81 -VCCRX-1.62 V Output load resistor (RL = 50 ohm) is
connected to VCCRX - 2.0V. VCCRX =
5.0V, Tc=25 oC
Data Output Voltage-
High VOH VCCRX-1.03 -VCCRX-0.88 V
Rise Time Output
Signal trout - - 1 ns 20%-80% Values
1310 nm FP Laser 155Mbps Single Mode Optical Transceiver
Fall Time Output
Signal tfout - - 1 ns 80%-20% Values
Please click below for more information.
Pin Configuration
Package Dimensions
If you have any comments or request for detail product information, please fill the
Quotation & Information Request Form or mail to: info@lasermate.com.
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1310 nm FP Laser 155Mbps Single Mode Optical Transceiver
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1310 nm FP Laser 1.25Gbps 1x9 Single Mode Optical Transceivers
Model No. C13F-1250-X-Y-Z
C13F = Transmitter 1310 nm FP laser
1250 = Data rate 1.25 Gbps
X = Interface Connector Duplex SC (X= SC), Duplex ST (X= ST), Duplex FC (X= SC)
Y = Output Power / Sensitivity -12 - -8 dBm/<-18 dBm (Y=S)
-10 - -5 dBm/<-18 dBm (Y=M)
-7 - -3 dBm/<-18 dBm (Y=L)
Z = Supply voltage +5V (Z=5)
FEATURES
Low Cost & High performance●
Transmitter: 1310 nm FP laser●
Data Rate: 1.25 Gbps, NRZ●
Power Supply Voltage: Single +5V●
Electrical Interface: Differential PECL●
Pin-Configuration: Industrial standard 1x9
package footprint
●
Connector Interface: SC/ST/FC Duplex
Connector
●
Loss Budget: 6dB, 8dB & 11dB available
SM Fiber: 9/125µm
●
APPLICATIONS
Gigabit Ethernet●
Fiber Channel●
Data Communication Networks●
ATM-Switches●
Absolute Maximum Ratings
Parameter Symbol Min. Typ. Max. Unit Note
Supply Voltage VCC 4.75 5 5.25 V + 5V version
1310 nm FP Laser 155Mbps Single Mode Optical Transceiver
Soldering Temperature --- 260 oC10 seconds on leads only
Operating Temperature Top 0 70 oC
Storage Temperature Tst -40 85 oC
Transmitter Specifications (0 oC<Top<70 oC, 4.75V<Vcc<5.25V)
Parameter Symbol Min. Typ. Max. Unit Notes
Electro-Optical Interface
Optical Output Power Po-7
-10
-12
--- -3
-5
-8
dBm Measured at the end of 100 cm length
9/125 µm step index fiber cable using
1.25Gbps, PRBS 27-1 signal at the
beginning of life.
Output Center Wavelength λ1280 1310 1340 nm
Output Spectrum Width ∆λ --- 2 5 nm RMS
Relative Intensive Noise RIN -117 dB/Hz Measured using 1.25Gbps 1010 signal
Extinction Ratio ER9 --- --- dB
Optical Rise Time (20%-80%) tr260 ps Measured using 1.25Gbps 1010 signal.
Optical Fall Time (80%-20%) tf260 ps Measured using 1.25Gbps 1010 signal.
Electrical Interface
Supply Voltage Vcc 4.75 5 5.25 V
Supply Current Icc 170 mA
Data Input Voltage-Low VIL VCC -1.95 VCC -1.45 V VCC = 5.0V, TC = 25 oC
Data Input Voltage-High VIH VCC -1.17 VCC -0.73 V
Receiver Specifications (0 oC<Top<70 oC, 4.75V<Vcc<5.25V)
Parameter Symbol Min. Typ. Max. Unit Notes
Electro-Optical Interface
Sensitivity --- --- -18 dBm BER=1.0X10-12, 1.25Gbps, PRBS 27-1
Detecting range λ1270 1355 nm
Signal Detect – Asserted Pa --- --- -18 dBm 1.25Gbps, 1010 signal.
Signal Detect –Deasserted Pd - 29 --- --- dBm 1.25Gbps, 1010 signal.
Signal Detect –Hysteresis Phys 3 dB 1.25Gbps, 1010 signal.
1310 nm FP Laser 155Mbps Single Mode Optical Transceiver
Electrical Interface
Supply Voltage VCCRX 4.75 5 5.25 V
Power Supply Current ICCRX 110 mA The current excludes the output load
current.
Data Output Voltage—Low VOL VCCRX-1.81 VCCRX-1.62 V Output load resistor (RL = 50 ohm) is
connected to VCCRX - 2.0V. VCCRX =
5.0V, Tc=25 oC
Data Output Voltage—High VOH VCCRX-1.03 VCCRX-0.88 V
Please click below for more information.
Pin Configuration
Package Dimensions
If you have any comments or request for detail product information, please fill the
Quotation & Information Request Form or mail to: info@lasermate.com.
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1310 nm FP Laser 155Mbps Single Mode Optical Transceiver
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1550 nm FP Laser 155Mbps 1x9 Single Mode Optical Transceivers
Read Model No. C15F-155-X-Y-Z
C15F = Transmitter 1550 nm FP laser
155 = Data rate 155 Mbps
X = Interface Connector Duplex SC (X= SC), Duplex ST (X= ST), Duplex FC (X= SC)
Y = Output Power / Sensitivity -12 - -8 dBm/<-32 dBm (Y=S)
-6 - -4 dBm/<-34 dBm (Y=M)
Z = Supply Voltage +5V (Z=5)
FEATURES
Low Cost & High performance●
Transmitter: 1550 nm FP laser●
Data Rate: 155Mbps, NRZ●
Power Supply Voltage: Single +5V ●
Electrical Interface: Differential PECL●
Pin-Configuration: Industrial standard 1x9 package footprint●
Connector Interface: SC/ST/FC Duplex Connector ●
Loss Budget: 20dB & 28dB
SM Fiber: 9/125µm
●
APPLICATIONS
FDDI●
ATM/SONET OC-3/SDH STM-1●
Active Star Network●
Point to Point Links●
Fast Ethernet●
Absolute Maximum Ratings
Parameter Symbol Min. Typ. Max. Unit Note
Supply Voltage VCC 4.75 5 5.25 V
Soldering Temperature --- 260 oC10 seconds on leads only
Operating Temperature Top 0 70 oC
Storage Temperature Tst -40 85 oC
1550 nm FP Laser 155Mbps Single Mode Optical Transceiver
Transmitter Specifications (0 oC<Top<70 oC, 4.75V<Vcc<5.25V)
Parameter Symbol Min. Typ. Max. Unit Notes
Electro-Optical Interface
Optical Output Power Po-6
-12
--- -4
-8
dBm Measured at the end of 100 cm length 9/125
µm step index fiber cable using 155Mbps,
PRBS 223-1 signal at the beginning of life.
Output Center Wavelength λ1520 1550 1580 nm
Output Spectrum Width ∆λ --- 2 6 nm RMS
Extinction Ratio ER10 --- --- dB
Output Eye Diagram Compliant with ITU recommendation G.957 mask patterns
Optical Rise Time (20%-80%) tr3 ns Measured using 155Mbps 1010 signal.
Optical Fall Time (80%-20%) tf3 ns Measured using 155Mbps 1010 signal.
Electrical Interface
Supply Voltage Vcc 4.75 5 5.25 V
Supply Current Icc 100 mA
Data Input Voltage-Low VIL VCC -1.95 VCC -1.45 V VCC = 5.0V, TC = 25 oC
Data Input Voltage-High VIH VCC -1.17 VCC -0.73 V
Rise Time Input Signal tr3 ns 20%-80% Values
Fall Time Input Signal tf3 ns 80%-20% Values
Receiver Specifications (0 oC<Top<70 oC, 4.75V<Vcc<5.25V)
Parameter Symbol Min. Typ. Max. Unit Notes
Electro-Optical Interface
Sensitivity --- --- -32
-34
dBm BER=1.0X10-10, 155Mbps, PRBS 223-1
Saturation (Average Power) Psat 0 --- dBm 155Mbps, 1010 signal
Signal Detect – Asserted Pa --- -30 --- dBm 155Mbps, 1010 signal.
Signal Detect –Deasserted Pd --- -33 --- dBm 155Mbps, 1010 signal.
Signal Detect –Hysteresis Phys 3 dB 155Mbps, 1010 signal.
Electrical Interface
Supply Voltage VCCRX 4.75 5 5.25 V
Power Supply Current ICCRX 140 mA The current excludes the output load
current.
Data Output Voltage—Low VOL VCCRX-1.81 VCCRX-1.62 V Output load resistor (RL = 50 ohm) is
connected to VCCRX - 2.0V. VCCRX =
5.0V, Tc=25 oC
Data Output Voltage—High VOH VCCRX-1.03 VCCRX-0.88 V
Rise Time Output Signal trout 1.6 ns 20%-80% Values
Fall Time Output Signal tfout 1.6 ns 80%-20% Values
1550 nm FP Laser 155Mbps Single Mode Optical Transceiver
Please click below for more information.
Pin Configuration
Package Dimensions
If you have any comments or request for detail product information, please fill the
Quotation & Information Request Form or mail to: info@lasermate.com.
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1550 nm FP Laser 155Mbps Single Mode Optical Transceiver
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GaAs PIN Photodiode for 500nm - 850 nm Emitter
Please click the item of interest below for more information.
GaAs PIN Photodiode in TO-46 Package
Pre-amplified GaAs PIN-TIA Photodiode Receiver in TO-46 Package from 100Mbps to 2.5Gbps
Connectorized GaAs PIN Photodiode in FC/SC/ST Receptacles
Connectorized Pre-amplified GaAs PIN-TIA Photodiode in FC/SC/ST Receptacles from 100Mbps to
1.25Gbps
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Quotation & Information Request Form or mail to: info@lasermate.com.
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GaAs PIN Photodiode for 850 nm Emitter
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GaAs PIN Photodiode in TO-46 Package for 850 nm Emitter
Model No. PDT-A85A30
FEATURES:
• Industry standard TO-46 package with cap lens.
• Optimized for fiber optic application.
• High coupling efficiency to multi-mode fibers directly.
• Low dark current and low capacitance.
• Bandwidth > 1.5 GHz.
ELECTRO-OPTICAL CHARACTERISTICS:
PARAMETERS SYMBOL MIN TYP MAX UNIT TEST CONDITIONS
Responsivity (1) R-0.3 0.4 A/W VR=5V, λ = 850 nm
Forward Current IF100 - - µAVF=1V
Dark Current ID-1 2 nA VR=5V
Breakdown Voltage VBD -85 -VIR=10µA
Capacitance (2) C-1.2 1.5 pF VR=5V, f=1 MHz
Notes:
1. The responsivity is measured with a receptacle package, using an 850 nm VCSEL as
the optical light source to the 50/125 or 62.5/125 µm multi-mode fibers.
2. Sensitive area is typical 120µm in diameter.
ABSOLUTE MAXIMUM RATINGS:
PARAMETERS MIN MAX UNIT CONDITIONS
Storage Temperature -40 125 °C
Operating Temperature -20 85 °C
Lead Solder Temperature 260 °C 10 seconds
Outline Dimensions:
Unit: mm
GaAs PIN Photodiode for 850 nm Emitter
GaAs PIN Photodiode for 850 nm Emitter
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GaAs PIN Photodiode Plus AGC Pre-amplifiers
GaAs PIN Photodiode Plus AGC Pre-amplifier for 100/155 Mbps applications
GaAs PIN Photodiode Plus AGC Pre-amplifier for 1.25 Gbps applications
GaAs PIN Photodiode Plus AGC Pre-amplifier for 2.5 Gbps applications
If you have any comments or request for detail product information, please fill the
Quotation & Information Request Form or mail to: info@lasermate.com.
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GaAs PIN Photodiode Plus AGC pre-amplifier for 850 nm Emitter
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GaAs PIN Photodiode Plus AGC Pre-amplifier for 100/155 Mbps
applications
Model No. PDT-A85P40
FEATURES:
• Industry standard TO-46 package with cap lens.
• Optimized for fiber optic application.
• Bandwidth > 115 MHz for 100/155 Mbps applications.
ELECTRO-OPTICAL CHARACTERISTICS:
PARAMETERS SYMBOL MIN TYP Max UNIT TEST CONDITIONS
Power Supply VCC 4.5 5 5.5 V -
Supply Current ICC - - 35 mA no loads
DC Output Voltage VODC 1.5 2.5 3.5 V -
Differential Output Voltage Vd- - 1.2 V λ = 850 nm, 0 dBm
Data out Rise Time (10 - 90%) Tr-3 4.5 ns -
Data out Fall Time (10 - 90%) Tf-3 4.5 ns -
Pulse Width Distortion PWD - - 1 ns -
Output Overshoot - - 3 % -
Output Resistance Rout -50 -Ohms -
Bandwidth BW 115 125 -MHz -
Max. Input Power PInmax -0-dBm λ = 850 nm, 155 Mbps
Sensitivity --33 -dBm λ = 850 nm, 155 Mbps, BER
10-10
ABSOLUTE MAXIMUM RATINGS:
PARAMETERS MIN MAX UNIT CONDITIONS
Storage Temperature -40 100 °C
Operating Temperature -40 85 °C
Lead Solder Temperature 260 °C 10 seconds
Outline Dimensions:
Unit: mm
GaAs PIN Photodiode Plus AGC pre-amplifier for 850 nm Emitter
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GaAs PIN Photodiode Plus AGC Pre-amplifier for 1.25 Gbps Applications
Model No. PDT-A85P41
FEATURES:
• Industry standard TO-46 package with cap lens.
• Optimized for fiber optic application.
• Bandwidth typical 920 MHz for 1.25 Gbps applications.
ELECTRO-OPTICAL CHARACTERISTICS:
PARAMETERS SYMBOL MIN TYP Max UNIT TEST CONDITIONS
Power Supply VCC 3.0 - 5.5 V -
Supply Current ICC - 26 50 mA no loads
Maximum Differential Output
Voltage Vd185 250 415 mVp-p λ = 850 nm, P= 0 dBm
Differential Responsivity Rd 1.1 1.4 1.7 mV/µWRload = 100 ohm,
P=-15 dBm @ 50 MHz, 850 nm
Single Ended Responsivity Rs 0.5 0.7 0.8 mV/µWRload = 50 ohm,
P=-15 dBm @ 50 MHz, 850 nm
Small-Signal Bandwidth BW 750 920 1100 MHz
Low-Frequency Cut Off LF 44 kHz
Rise Time/Fall Time (20 - 80%) Tr/Tf- 300 400 ps 20 - 80%
Single Ended Output Impedance Ro48 50 52 Ohms -
RMS Input Referred Noise - 390 520 nW -
RMS Output Referred Noise Vn 1.6 mV P = 0 dBm
Power Supply Rejection Ratio PSRR 50 dB
Wavelength λ770 - 860 nm
ABSOLUTE MAXIMUM RATINGS:
PARAMETERS MIN MAX UNIT CONDITIONS
Storage Temperature -40 100 °C
Operating Temperature -40 85 °C
Lead Solder Temperature 260 °C 10 seconds
Outline Dimensions:
Unit: mm
GaAs PIN Photodiode Plus AGC pre-amplifier for 1.25 Gbps Applications
Pinout:
(Bottom view)
____
1. Dout
2. Dout
3. Vcc
4. Gnd
If you have any comments or request for detail product information, please fill the
Quotation & Information Request Form or mail to: info@lasermate.com.
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GaAs PIN Photodiode Plus AGC pre-amplifier for 1.25 Gbps Applications
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GaAs PIN Photodiode Plus AGC Pre-amplifier for 2.5 Gbps Applications
Model No. PDT-A85P42
FEATURES:
• Industry standard TO-46 package with cap lens.
• Optimized for fiber optic application.
• Bandwidth typical 1900 MHz for 2.5 Gbps applications.
ELECTRO-OPTICAL CHARACTERISTICS:
PARAMETERS SYMBOL MIN TYP Max UNIT TEST CONDITIONS
Power Supply VCC 3.0 - 5.5 V -
Supply Current ICC - 26 50 mA no loads
Maximum Differential Output
Voltage Vd185 250 415 mVp-p λ = 850 nm, P= 0 dBm
Differential Responsivity Rd 0.7 0.9 1.1 mV/µWRload = 100 ohm,
P=-15 dBm @ 50 MHz, 850 nm
Single Ended Responsivity Rs 0.35 0.45 0.55 mV/µWRload = 50 ohm,
P=-15 dBm @ 50 MHz, 850 nm
Small-Signal Bandwidth BW 1530 1900 2400 MHz -
Low-Frequency Cut Off LF - 44 - kHz -
Rise Time/Fall Time (20 - 80%) Tr/Tf- 300 400 ps 20 - 80%
Single Ended Output Impedance Ro48 50 52 Ohms -
RMS Input Referred Noise - 800 1200 nW -
RMS Output Referred Noise Vn - - 1.6 mV P = 0 dBm
Power Supply Rejection Ratio PSRR - 50 - dB -
Wavelength λ770 - 860 nm -
ABSOLUTE MAXIMUM RATINGS:
PARAMETERS MIN MAX UNIT CONDITIONS
Storage Temperature -40 100 °C
Operating Temperature -40 85 °C
Lead Solder Temperature 260 °C 10 seconds
Outline Dimensions:
Unit: mm
GaAs PIN Photodiode Plus AGC pre-amplifier for 2.5 Gbps Applications
Pinout: (Bottom
view)
____
1. Dout
2. Dout
3. Vcc
4. Gnd
If you have any comments or request for detail product information, please fill the
Quotation & Information Request Form or mail to: info@lasermate.com.
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GaAs PIN Photodiode Plus AGC pre-amplifier for 2.5 Gbps Applications
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GaAs PIN Photodiode in Metallic ST/SC/FC Receptacle
Model No. RST-M85A306 / RSC-M85A306 / RFC-M85A306
FEATURES:
• Industry standard connector of metallic ST/SC/FC receptacle.
• Prealigned for 62.5/125 µm & 50/125 µm multi-mode fibers.
• Low dark current and low capacitance.
• Bandwidth > 1.5 GHz.
RST-M85A306 RSC-M85A306 RFC-M85A306
ELECTRO-OPTICAL CHARACTERISTICS:
PARAMETERS SYMBOL MIN TYP MAX UNIT TEST CONDITIONS
Responsivity (1) R 0.35 0.4 -A/W VR=5V, λ = 850 nm
Dark Current ID-1 2 nA VR=5V
Breakdown Voltage VBD 50 85 -VIR=10µA
Capacitance (2) C-1.2 1.5 pF VR=5V, f=1 MHz
Notes:
1. The responsivity is measured with a receptacle package, using an 850 nm VCSEL as
the optical light source to the 50/125 or 62.5/125 µm multi-mode fibers.
2. Sensitive area is typical 120µm in diameter.
ABSOLUTE MAXIMUM RATINGS:
PARAMETERS MIN MAX UNIT CONDITIONS
Storage Temperature -40 125 °C
Operating Temperature -20 85 °C
Lead Solder Temperature 260 °C 10 seconds
Outline Dimensions:
Unit: mm
RST-M85A306 RSC-M85A306
Connectorized GaAs PIN Photodiode for 850 nm Emitter
RFC-M85A306
Connectorized GaAs PIN Photodiode for 850 nm Emitter
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GaAs PIN Photodiode Plus AGC Pre-amplifier in ST/SC
Receptacle
Model No. RST-P85P406 / RSC-M85P406
FEATURES:
• Industry standard connector of ST/SC receptacle.
• Prealigned for 62.5/125 µm 50/125 µm multi-mode fiber.
• Solution of short-wavelength 10/100/155 Mbps applications.
RST-P85P406 RSC-M85P406
ELECTRO-OPTICAL CHARACTERISTICS:
PARAMETERS SYMBOL MIN TYP Max UNIT TEST CONDITIONS
Power Supply VCC 4.5 5 5.5 V -
Supply Current ICC - - 35 mA no loads
DC Output Voltage VODC 1.5 2.5 3.5 V -
Differential Output Voltage Vd- - 1.2 V λ = 850 nm, 0 dBm
Data out Rise Time (10 - 90%) Tr-3 4.5 nS -
Data out Fall Time (10 - 90%) Tf-3 4.5 nS -
Pulse Width Distortion PWD - - 1 nS -
Output Overshoot - - 3 % -
Output Resistance Rout -50 -Ohms -
Bandwidth BW - 125 -MHz -
Max. Input Power PInmax -0-dBm λ = 850 nm, 155 Mbps
Sensitivity --32 -27 dBm λ = 850 nm, 155 Mbps, BER
10-10
ABSOLUTE MAXIMUM RATINGS:
PARAMETERS MIN MAX UNIT CONDITIONS
Storage Temperature -40 100 °C
Operating Temperature -20 85 °C
Lead Solder Temperature 260 °C 10 seconds
Outline Dimensions:
Unit: mm
GaAs PIN Photodiode Plus AGC pre-amplifier in ST/SC Receptacle for 850 nm Emitter
RST-P85P406 RSC-M85P406
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GaAs PIN Photodiode Plus AGC pre-amplifier in ST/SC Receptacle for 850 nm Emitter
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InGaAs PIN Photodiode for 850 nm - 1300 nm Emitters
Please click the item of interest below for more information.
InGaAs PIN Photodiode in TO-46 Package
Pre-amplified InGaAs PIN Photodiode in TO-46 Package
Connectorized InGaAs PIN Photodiode in FC/SC/ST Receptacles
Connectorized Pre-amplified InGaAs PIN Photodiode in FC/SC/ST Receptacles
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InGaAs PIN Photodiode Receivvers
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InGaAs PIN Photodiode in TO-46 Package for 1300 nm Emitter
Model No. PDT-A13A30
FEATURES:
• Industry standard TO-46 package with cap lens.
• Optimized for fiber optic application.
• High coupling efficiency to multi-mode fibers directly.
• Low dark current and low capacitance.
ELECTRO-OPTICAL CHARACTERISTICS:
PARAMETERS SYMBOL MIN TYP MAX UNIT TEST CONDITIONS
Responsivity (1) R 0.8 0.9 - A/W VR=5V, λ = 1300 nm
Forward Current IF100 - - µAVF=1V
Dark Current ID-1 2 nA VR=5V
Breakdown Voltage VBD -55 -VIR=10µA
Capacitance (2) C-1.5 1.7 pF VR=5V, f=1 MHz
Notes:
1. The responsivity is measured with a receptacle package, using an 1300 nm LED as
the optical light source to the fiber.
2. Sensitive area is typical 120µm in diameter.
ABSOLUTE MAXIMUM RATINGS:
PARAMETERS MIN MAX UNIT CONDITIONS
Storage Temperature -40 125 °C
Operating Temperature -20 85 °C
Lead Solder Temperature 260 °C 10 seconds
InGaAs PIN Photodiode for 1300 nm Emitter
Outline Dimensions:
Unit: mm
Fig. 1 Typical Forward Current and Dark Current Fig. 2 Typical Photo-Current
InGaAs PIN Photodiode for 1300 nm Emitter
Fig. 3 Typical Breakdown Curve Fig. 4 Typical C-V Curve
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InGaAs PIN Photodiode for 1300 nm Emitter
InGaAs PIN Photodiode for 1300 nm Emitter
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InGaAs PIN Photodiode Plus AGC Pre-amplifiers
InGaAs PIN Photodiode Plus AGC Pre-amplifier for 100/155 Mbps applications
InGaAs PIN Photodiode Plus AGC Pre-amplifier for 1.25 Gbps applications
InGaAs PIN Photodiode Plus AGC Pre-amplifier for 2.5 Gbps applications
If you have any comments or request for detail product information, please fill the
Quotation & Information Request Form or mail to: info@lasermate.com.
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InGaAs PIN Photodiode Plus AGC pre-amplifier for 850 nm Emitter
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InGaAs PIN Photodiode Plus AGC Pre-amplifier
Model No. PDT-A13P40
FEATURES:
• Industry standard TO-46 package with cap lens.
• Optimized for fiber optic application.
• Bandwidth > 115 MHz.
ELECTRO-OPTICAL CHARACTERISTICS:
PARAMETERS SYMBOL MIN TYP Max UNIT TEST CONDITIONS
Power Supply VCC 4.5 5 5.5 V -
Supply Current ICC - - 35 mA no loads
DC Output Voltage VODC 1.5 2.5 3.5 V -
Differential Output Voltage Vd- - 1.2 V λ = 1300 nm, 0 dBm
Data out Rise Time (10 - 90%) Tr-3 4.5 ns -
Data out Fall Time (10 - 90%) Tf-3 4.5 ns -
Pulse Width Distortion PWD - - 1 ns -
Output Overshoot - - 3 % -
Output Resistance Rout -50 -Ohms -
Bandwidth BW 115 125 -MHz -
Max. Input Power PInmax -3-dBm λ = 1300 nm, 155 Mbps
Sensitivity --33 -31 dBm λ = 1300 nm, 155 Mbps, BER
10-10
ABSOLUTE MAXIMUM RATINGS:
PARAMETERS MIN MAX UNIT CONDITIONS
Storage Temperature -40 100 °C
Operating Temperature -20 85 °C
Lead Solder Temperature 260 °C 10 seconds
Outline Dimensions:
Unit: mm
InGaAs PIN Photodiode Plus AGC pre-amplifier for 1300 nm Emitter
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InGaAs PIN Photodiode Plus AGC Pre-amplifier for 1.25 Gbps Applications
Model No. PDT-A13P41
FEATURES:
• Industry standard TO-46 package with cap lens.
• Optimized for fiber optic application.
• Bandwidth typical 920 MHz for 1.25 Gbps applications.
ELECTRO-OPTICAL CHARACTERISTICS:
PARAMETERS SYMBOL MIN TYP Max UNIT TEST CONDITIONS
Power Supply VCC 3.0 - 5.5 V -
Supply Current ICC - 26 50 mA no loads
Maximum Differential Output
Voltage Vd185 250 415 mVp-p P= 0 dBm
Differential Responsivity Rd 1.9 2.5 3.0 mV/µWRload = 100 ohm,
P=-15 dBm @ 50 MHz, 1300
nm
Single Ended Responsivity Rs 0.9 1.2 1.5 mV/µWRload = 50 ohm,
P=-15 dBm @ 50 MHz, 130 nm
Small-Signal Bandwidth BW 750 920 1100 MHz
Low-Frequency Cut Off LF 44 kHz
Rise Time/Fall Time (20 - 80%) Tr/Tf 300 400 ps 20 - 80%
Single Ended Output Impedance Ro48 50 52 Ohms -
RMS Input Referred Noise - 220 290 nW -
RMS Output Referred Noise Vn 1.6 mV P = 0 dBm
Power Supply Rejection Ratio PSRR 50 dB
Wavelength λ1270 - 1380 nm
ABSOLUTE MAXIMUM RATINGS:
PARAMETERS MIN MAX UNIT CONDITIONS
Storage Temperature -40 100 °C
Operating Temperature -40 85 °C
Lead Solder Temperature 260 °C 10 seconds
Outline Dimensions:
Unit: mm
GaAs PIN Photodiode Plus AGC pre-amplifier for 1.25 Gbps Applications
Pinout:
(Bottom view)
____
1. Dout
2. Dout
3. Vcc
4. Gnd
If you have any comments or request for detail product information, please fill the
Quotation & Information Request Form or mail to: info@lasermate.com.
HOME | PRODUCT LIST | ORDER FORM | QUO & INFO REQUEST |
GaAs PIN Photodiode Plus AGC pre-amplifier for 1.25 Gbps Applications
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InGaAs PIN Photodiode Plus AGC Pre-amplifier for 2.5 Gbps Applications
Model No. PDT-A13P42
FEATURES:
• Industry standard TO-46 package with cap lens.
• Optimized for fiber optic application.
• Bandwidth typical 1900 MHz for 2.5 Gbps applications.
ELECTRO-OPTICAL CHARACTERISTICS:
PARAMETERS SYMBOL MIN TYP Max UNIT TEST CONDITIONS
Power Supply VCC 3.0 - 5.5 V -
Supply Current ICC - 26 50 mA no loads
Maximum Differential Output
Voltage Vd185 250 415 mVp-p P= 0 dBm
Differential Responsivity Rd 1.3 1.6 1.9 mV/µWRload = 100 ohm,
P=-15 dBm @ 50 MHz, 1300
nm
Single Ended Responsivity Rs 0.6 0.8 0.9 mV/µWRload = 50 ohm,
P=-15 dBm @ 50 MHz, 1300
nm
Small-Signal Bandwidth BW 1500 1900 2100 MHz -
Low-Frequency Cut Off LF - 44 - kHz -
Rise Time/Fall Time (20 - 80%) Tr/Tf- 300 400 ps 20 - 80%
Single Ended Output Impedance Ro48 50 52 Ohms -
RMS Input Referred Noise - 500 650 nW -
Power Supply Rejection Ratio PSRR - 50 - dB -
Wavelength λ1270 - 1380 nm -
ABSOLUTE MAXIMUM RATINGS:
PARAMETERS MIN MAX UNIT CONDITIONS
Storage Temperature -40 100 °C
Operating Temperature -40 85 °C
Lead Solder Temperature 260 °C 10 seconds
Outline Dimensions:
Unit: mm
InGaAs PIN Photodiode Plus AGC pre-amplifier for 2.5 Gbps Applications
Pinout: (Bottom
view)
____
1. Dout
2. Dout
3. Vcc
4. Gnd
If you have any comments or request for detail product information, please fill the
Quotation & Information Request Form or mail to: info@lasermate.com.
HOME | PRODUCT LIST | ORDER FORM | QUO & INFO REQUEST |
InGaAs PIN Photodiode Plus AGC pre-amplifier for 2.5 Gbps Applications
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InGaAs PIN Photodiode in Metallic ST/SC/FC Receptacle
Model No. RST-M13A306 / RSC-M13A306 / RFC-M13A306
FEATURES:
• Industry standard connector of metallic ST/SC/FC receptacle.
• Prealigned for 62.5/125 µm & 50/125 µm multi-mode fibers.
• Low dark current and low capacitance.
• Bandwidth > 1.5 GHz.
RST-M13A306 RSC-M13A306 RFC-M13A306
ELECTRO-OPTICAL CHARACTERISTICS:
PARAMETERS SYMBOL MIN TYP MAX UNIT TEST CONDITIONS
Responsivity (1) R 0.6 0.8 -A/W VR=5V, λ = 1300 nm
Responsivity (2) R 0.25 A/W VR=5V, λ = 850 nm
Dark Current ID-1 2 nA VR=5V
Breakdown Voltage VBD 55 -VIR=10µA
Capacitance (3) C-1.5 1.7 pF VR=5V, f=1 MHz
Notes:
1. The responsivity is measured with a receptacle package, using an 1300 nm LED as
the optical light source to the 50/125 or 62.5/125 µm multi-mode fibers.
2. The responsivity is measured with a receptacle package, using an 850 nm VCSEL as
the optical light source to the 50/125 or 62.5/125 µm multi-mode fibers.
3. Sensitive area is typical 120µm in diameter.
ABSOLUTE MAXIMUM RATINGS:
PARAMETERS MIN MAX UNIT CONDITIONS
Storage Temperature -40 125 °C
Operating Temperature -20 85 °C
Lead Solder Temperature 260 °C 10 seconds
Outline Dimensions:
Unit: mm
RST-M13A306 RSC-M13A306
Connectorized InGaAs PIN Photodiode for 1300 nm Emitter
RFC-M13A306
Connectorized InGaAs PIN Photodiode for 1300 nm Emitter
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InGaAs PIN Photodiode Plus AGC Pre-amplifier in ST/SC
Receptacle
Model No. RST-P13P406 / RSC-M13P406
FEATURES:
• Industry standard connector of ST/SC receptacle.
• Prealigned for 62.5/125 µm & 50/125 µm multi-mode fiber.
• Solution of short-wavelength 10/100/155 Mbps applications.
RST-P13P406 RSC-M13P406
ELECTRO-OPTICAL CHARACTERISTICS:
PARAMETERS SYMBOL MIN TYP Max UNIT TEST CONDITIONS
Power Supply VCC 4.5 5 5.5 V -
Supply Current ICC - - 35 mA no loads
DC Output Voltage VODC 1.5 2.5 3.5 V -
Differential Output Voltage Vd- - 1.2 V λ = 1300 nm, 0 dBm
Data out Rise Time (10 - 90%) Tr-3 4.5 nS -
Data out Fall Time (10 - 90%) Tf-3 4.5 nS -
Pulse Width Distortion PWD - - 1 nS -
Output Overshoot - - 3 % -
Output Resistance Rout -50 -Ohms -
Bandwidth BW - 125 -MHz -
Max. Input Power PInmax -3-dBm λ = 1300 nm, 155 Mbps
Sensitivity --33 -31 dBm λ = 1300 nm, 155 Mbps, BER
10-10
ABSOLUTE MAXIMUM RATINGS:
PARAMETERS MIN MAX UNIT CONDITIONS
Storage Temperature -40 100 °C
Operating Temperature -20 85 °C
Lead Solder Temperature 260 °C 10 seconds
Outline Dimensions:
Unit: mm
RST-P13P406 RSC-M13P406
GaAs PIN Photodiode Plus AGC pre-amplifier in ST/SC Receptacle for 850 nm Emitter
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InGaAs PIN Photodiode for 1310 nm - 1550 nm Emitters
Please click the item of interest below for more information.
InGaAs/InP PIN Photodiode in TO-46 Package
Pre-amplified InGaAs/InP PIN Photodiode in TO-46 Package
Connectorized InGaAs/InP PIN Photodiode in FC/SC/ST Receptacles & Pigtails
Connectorized Pre-amplified/InP InGaAs PIN Photodiode in FC/SC/ST Receptacles & Pigtails
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InGaAs PIN Photodiode Receivers
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InGaAs PIN Photodiode for 1310 nm - 1550 nm Emitters
Model No.
R-13-075-G-B
R-13-300-G-B
APPLICATIONS
Connector receptacle module
Coaxial pigtailed module
Data and Telecommunication
FEATURES
InGaAs/InP PIN Photodiode
High responsivity at 1310 and 1550 nm
Low dark current
Fast pulse response
-40 to 85 oC operating temperature
Hermetically sealed 3-pin metal case
75 µm or 300 µm active diameter
PACKAGING
TO-46 package with integrated ball lens cap
Absolute Maximum Ratings (TC=25oC)
Parameter Symbol Value Unit
Reverse Voltage VR20 V
Forward Current IF2 mA
Reverse Current IR1 mA
Operating Temperature TC-40 ~ 85 oC
Storage Temperature Tstg -40 ~ 85 oC
Optical & Electrical Characteristics (TC=25oC, unless otherwise noted)
Photodiode Receivvers
Parameter Symbol R-13-075-G-B R-13-300-G-B Unit Test
Condition
—Min. Typ. Max. Min. Typ. Max. —
Active Area(Dia.) — — 75 — — 300 — µm—
Detection Range —1000 1310 1650 1000 1310 1650 nm ——
Responsivity R 0.8 0.85 —0.8 0.85 —A/W VR=5V, λ =
1300nm
Dark Current Idark —0.4 0.8 —2 5 nA VR=5V
Capacitance C —0.7 0.9 —6 10 pF VR=5V
Rise/Fall Time tr/tf— — 0.3 —1—ns VR=5V,
10% ~ 90%
Bandwidth BW 2 0.5 GHz VR=5V
* ESD precautions must be taken when handling this unit.
Note: Specification subject to change without notice.
Outline Dimensions: Pinout:
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Quotation & Information Request Form or mail to: info@lasermate.com.
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Photodiode Receivvers
Photodiode Receivvers
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Preamplified InGaAs PIN Photodiode for 1310 nm - 1550
nm Emitters
155 Mbps PIN-TIA
RECEIVER
T-13-155-G-AGC
APPLICATIONS
ATM 155Mb/s receiver/transceiver
Fast Ethernet 100 Mb/s
receiver/transceiver
FEATURES
InGaAs PIN photodetector with transimpedance amplifier
High sensitivity with AGC
Differential or single ended output
Single +5V operation
-40oC to 85oC operating temperature
PACKAGING
Integrated 4-pin TO-46 package
Absolute Maximum Ratings (TC=25oC)
Item Symbol Value Unit
Supply Voltage Vcc 6 V
Operating Temperature Topr -40 ~ 85 oC
Storage Temperature Tstg -40 ~ 85 oC
DC Electrical Characteristics (TC=25oC)
Preamplified InGaAs PIN Photodiode Detector
Item Symbol T-13-155-G-AGC Unit
Min. Typ. Max.
Power Supply Vcc 4.5 5.0 5.5 V
Output Offset Voltage Vos Vcc-3.5 Vcc-2.5 Vcc-1.5 V
Differential Output Voltage Vd—1—V
Supply Current (no load) Icc — — 35 mA
AC/Optical & Electrical Characteristics (Vcc=5V, TC=25oC, RL=50Ω ,
λ=1310nm, all optical data refer to a coupled 9/125µ m SM fiber)
Item Symbol T-13-155-G-AGC Unit
Min. Typ. Max.
Gain Single Ended
Differential G 0.09 —110 V/mW
0.17 —220
Bandwidth BW 120 140 —MHz
Sensitivity S —-38 -35 dBm
Saturation Power Psat -3 0 — dBm
Output Resistance Rout —50 65 ohm
* ESD precautions must be taken when handling this unit.
Note: Specification subject to change without notice.
If you have any comments or request for detail product information, please fill the
Quotation & Information Request Form or mail to: info@lasermate.com.
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Preamplified InGaAs PIN Photodiode Detector
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Connectorized InGaAs/InP PIN Photodiode Modules
Read Model No. R13-XYZ
R13 = Receiver InGaAs/InP PIN photodiode for 1310 nm & 1550 nm
X = Package Receptacle (X= R)
Pigtail (X = P)
Y = Connector For Pigtail:
None (Y= NO);
FC/PC (Y=FC); SC/PC (Y=SC); ST/PC (Y=ST);
FC/APC (Y=FA); SC/APC (Y=CA); ST/APC (Y=TA)
For Receptacle:
FC (Y=FC); SC (Y=SC); ST (Y=ST)
Z = Fiber 9/125 µm SM fiber(Z=1)
50/125 µm MM fiber(Z=2)
62.5/125 µm MM fiber(Z=3)
Features
InGaAs/InP PIN Photodiode● Sensitive receiver at 1310 nm &
1550 nm
●
Low dark current● Fast pulse response ●
-40 ~85 oC operating temperature● Hermetically sealed 3-pin metal
case
Applications
●
LANS● FDDI● SONET OC-3/SDH STM-1● SONET OC-12/SDH STM-4● SONET OC-24/SDH STM-8● SDH-DLC● Power Meter●
Packaging
FC/ST/SC receptacle package● SM/MM fiber pigtailed with optional FC/ST/SC connector●
Connectorized InGaAs/InP PIN Photodiode Modules
Absolute Maximum Ratings(Tc=25 oC)
Parameter Symbol Value Unit
Supply Reverse voltage VR30 V
Forward Current IF5 mA
Reverse Current IR1 mA
Operating Temperature Top -40~+85 oC
Storage Temperature Tstg -40~+85 oC
Optical and Electrical Characteristics (Tc=25 oC)
Parameter Symbol Min. Typ. Max. Unit Test condition
Detection Range 1100 - 1650 nm -
Responsivity R 0.8 0.85 - A/W VR=5V, λ=1300nm
Dark Current Idark - 0.5 3 nA VR=5V
Capacitance C - - 1 pF VR=5V
Rise/Fall Time Tr /Tf- - 1.15 ns VR=5V, 20%~80%
Bandwidth BW 1 - GHz VR=5V
Please click below for more information.
Pinout & Connectorized Package Outline Dimensions
If you have any comments or request for detail product information, please fill the
Quotation & Information Request Form or mail to: info@lasermate.com.
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Connectorized InGaAs/InP PIN Photodiode Modules
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Connectorized InGaAs/InP PIN Photodiode Receivers
Pigtail (dimensions in mm):
Connector Options: None
FC/PC SC/PC ST/PC
FC/APC SC/APC ST/APC
Connectorized InGaAs PIN-TIA Photodiode Receivers
Receptacle (dimensions in mm):
Connectorized InGaAs PIN-TIA Photodiode Receivers
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Connectorized InGaAs PIN-TIA Photodiode Receivers
Read Model No. R13-155-WXYZ
R13 = Receiver InGaAs/InP PIN-TIA photodiode for 1310 nm & 1550 nm
155 = Data Rate 155 Mbps
W = Package Receptacle (W= R);
Pigtail (W = P)
X = Connector For Pigtail:
None (X= NO);
FC/PC (X=FC); SC/PC (X=SC); ST/PC (X=ST);
FC/APC (X=FA); SC/APC (X=CA); ST/APC (X=TA)
For Receptacle:
FC (X=FC); SC (X=SC); ST (X=ST)
Y = Fiber 9/125 µm SM fiber(Y=1)
50/125 µm MM fiber(Y=2)
62.5/125 µm MM fiber(Y=3)
Z = Sensitivity <-34 dBm (Z=1); <-36 dBm (Z=2)
Features
InGaAs/InP-PIN photodiode with transimpedance amplifier●
High V/mW gain●
Single +5V operation●
Hermetically sealed 4-pin metal case●
-40~+85 oC operating range●
Data Rate: 155Mbps, NRZ● Packaging
FC/ST/SC receptacle package●
SM fiber pigtailed with optional FC/ST/SC connector●
Applications
ATM/SONET/Fast Ethernet 125/155 Mbps receiver●
Absolute Maximum Ratings(Tc=25oC)
Parameter Symbol Value Unit
Supply Supply Voltage VCC 6 V
Operating Temperature Top -40~+85 oC
Storage Temperature Tstg -40~+85 oC
Connectorized InGaAs PIN Photodiode Modules
DC/Electrical Characteristics (CW @Tc=25oC)
Parameter Symbol Min. Typ. Max. Unit
Power Supply VCC 4.5 5.0 5.5 V
Output Offset Voltage Vos 2.1 V
Supply Current Icc 30 - mA
AC/Optical & Electrical Characteristics (CW @Tc=25oC)
Parameter Symbol Min. Typ. Max. Unit Condition
Detection Range 1100 - 1650 nm
Gain G 0.08 100 V/mW λ=1300nm
Bandwidth BW 120 150 - MHz λ=1300nm
Sensitivity S - -37 -36/-34 dBm BER = 10-9
Dynamic Range DR - 37 - dB
Saturation Power Psat - 0 - dBm λ=1300nm
Output Resistance Rout - 50 - Ω
Please click below for more information.
Pinout & Outline Dimensions
If you have any comments or request for detail product information, please fill the
Quotation & Information Request Form or mail to: info@lasermate.com.
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Connectorized InGaAs PIN Photodiode Modules
155Mbps InGaAs/InP PIN-TIA Receiver Module
Receptacle (dimensions in mm)
Connectorized 155Mbps InGaAs/InP PIN-TIA photodiode
Pigtailed (dimensions in mm)
Connectorized 155Mbps InGaAs/InP PIN-TIA photodiode
Note: Pins orientation can be customer specified.
Connectorized 155Mbps InGaAs/InP PIN-TIA photodiode
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1 x N (N= 2, ..., 40) GaAs PIN Arrays with 100µm & 70µm
Sensitive Area
We offer 1 x N (N= 1, ..., 40) GaAs PIN photodiode chip & arrays as well as 850 nm VCSEL chip & arrays now. We
provide two versions of GaAs PIN phodiode PIN arrays. One is with 100µm sensitive area, which is with bandwidth
>1.5GHz. The other is with 70µm sensitive area, which is with rise/fall time is < 100 psec and can be applied for higher
speed applications.
The specifications of 1xN (N=2, ..., 40) arrays are same except the size. The following specifications are for 1 x 4 GaAs
PIN arrays as examples. Please contact us for more information if needed.
1 x N (N= 2, ..., 40) GaAs PIN photodiode arrays with 100µm sensitive area- PDA-85-1X4
1 x N (N= 2, ..., 40) GaAs PIN photodiode arrays with 70µm sensitive area- PDA-85-1X4-V2
Model No.: PDA-85-1X4
Features:
GaAs PIN photodiode array ●
1 x 4 array bar with 250 µm pitch ●
Sensitive area 100 µm ●
Bandwidth >1.5GHz ●
Optimized for fiber optic applications●
ELECTRO-OPTICAL CHARACTERISTICS: (for each single PIN photodiode element)
PARAMETERS SYMBOL MIN TYP MAX UNIT TEST CONDITIONS
Responsivity(1) R 0.55 0.6 0.65 A/W VR =5V, λ=850nm
Responsivity Uniformity(2) ∆R3 %
Forward Current IF 100 µAVF = 1V
Dark Current ID 1.0 9.0 nA VR =5V
Breakdown Voltage VBD 50 85 V IR =10µA
Capacitance C 0.9 1.2 pF VR =5V f=1 MHz
Bandwidth BW 1.5 GHz VR =5V
Notes:
1. AR coating optimized for the specific 850nm wavelength.
2. The difference of the maximum and minimum responsivity of each photodiode of an array shall not be >3%.
ABSOLUTE MAXIMUM RATING:
GaAs PIN Arrays
PARAMETERS SYMBOL MIN MAX UNIT TEST CONDITIONS
Reverse voltage VR20 V
Forward Voltage VF1.5 V VF = 1.5V
Forward Current IF5 mA
Operating Humidity 85 % R.H.
Operating Humidity 85 % R.H.
Storage Humidity 97 % R.H.
Storage Temperature Tstg -20 120 oC
Operating Temperature Top -20 85 oC
Lead Solder Temperature 260 oC10 seconds
DIMENSIONS:
PARAMETERS SYMBOL MIN TYP MIN UNIT
Number of PIN photodiode elements N 4
Pitch P 250 µm
Chip length (1 x N) L 990 1000 1110 µm
Chip width w 240 250 260 µm
Chip thickness t 190 200 210 µm
Diameter bond pads (see below) 70 µm
Diameter sensitive area (see below) 100 µm
OUTLINE DIAGRAM: (unit in µm)
GaAs PIN Arrays
Model No.: PDA-85-1X4-V2
Features:
GaAs PIN photodiode array●
1 x 4 array bar with 250 µm pitch●
Sensitive area 70 µm ●
Rise/Fall time (10-90%) <100 ps at 50 Ω●
Optimized for fiber optic applications●
ELECTRO-OPTICAL CHARACTERISTICS: (for each single PIN photodiode element)
PARAMETERS SYMBOL MIN TYP MAX UNIT TEST CONDITIONS
Responsivity(1) R 0.55 0.6 A/W VR =5V, λ=850nm
Surface Reflectivity RS1 %
Responsivity Uniformity(2) ∆R3 %
Dark Current ID 1.0 9.0 nA VR =5V
Breakdown Voltage VBD 50 70 V IR =10µA
Capacitance C 0.4 0.6 0.8 pF VR =1.6V f=1 MHz
Optical Power Range P 0 dBm
Rise/Fall Time (10-90%) TR/TF 80 100 ps At 50 Ω
Notes:
1. AR coating optimized for the specific 850nm wavelength.
2. The difference of the maximum and minimum responsivity of each photodiode of an array shall not be >3%.
ABSOLUTE MAXIMUM RATING:
PARAMETERS SYMBOL MIN MAX UNIT TEST CONDITIONS
Reverse voltage VR 20 V
Forward Voltage VF1.5 V VF = 1.5V
Forward Current IF5 mA
Operating Humidity 85 % R.H.
Operating Humidity 85 % R.H.
Storage Humidity 97 % R.H.
Storage Temperature Tstg -20 120 oC
Operating Temperature Top -20 85 oC
Lead Solder Temperature 260 oC10 seconds
DIMENSIONS:
PARAMETERS SYMBOL MIN TYP MIN UNIT
Number of PIN photodiode elements N 4
GaAs PIN Arrays
Pitch P 250 µm
Chip length (1xN) L 1000 µm
Chip width w 250 µm
Chip thickness t 185 200 215 µm
Diameter bond pads (see below) 80 µm
Diameter sensitive area (see below) 70 µm
OUTLINE DIAGRAM: (unit in µm)
Dicing Saw
If you have any comments or request for detail product information, please fill the
Quotation & Information Request Form or mail to: info@lasermate.com.
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GaAs PIN Arrays
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VCSEL Chips
We supply not only ion-implant VCSEL but also oxidation VCSEL with high
performance and high speed for data communications as well as sensing applications.
In addition, ion-implant VCSELs designed for CWDM (coarse wavelength division
multiplexing) data communications with custom-matched wavelength spacing from
770nm to 870nm are also available. For more information regarding VCSEL used in
CWDM or other applications, please contact Paul Lin at tel: (909)718-0999 or e-mail:
paul@lasermate.com.
Please click the Model No. below for more detail information.
Model No. Wavelength (nm) Process Method Feature
VCC85A1G 850 Ion-implant 1.25Gbps datacom
VCC85A1G-H 850 Ion-implant high power, 1.25Gbps datacom
VCC85A1G-S 850 Ion-implant gaussian beam <1.5mW, position
sensing
VCC77A1G 770 Ion-implant CWDM
VCC79A1G 790 Ion-implant CWDM
VCC81A1G 810 Ion-implant CWDM
VCC82A1G 820 Ion-implant CWDM
VCC85A2G 850 Ion-implant 1.25Gbps datacom
VCC85A3G-O 850 Oxidation 2.5Gbps, 3.125GBd datacom
If you have any comments or request for detail product information, please fill the
Quotation & Information Request Form or mail to: info@lasermate.com.
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850 nm VCSEL Arrays
850 nm VCSEL Arrays
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VCC-85A1G
High performance ion-implant VCSEL chip for data communication
FEATURES:
High performance VCSEL chip designed for communication application●
Low threshold current 5 mA typical●
Optical window diameter 18 µm●
Bandwidth > 1 GHz●
ELECTRO-OPTICAL CHARACTERISTICS:
PARAMETERS SYMBOL MIN TYP MAX UNIT TEST CONDITIONS (1)(2)
Threshold Current Ith 2 5 7 mA
Output Power Po 2 5 mW
Operating Current IOP 15 30 mA
Slope Efficiency dP/dI 0.25 mW/mA IF=11 mA
Wavelength λP830 845 860 nm IF=11 mA
Spectral Width (FWHM) ∆λ 0.5 1 nm IF=11 mA
Threshold Voltage Vth 1.47 1.49 1.55 V IF=0.5 mA
Forward Voltage VF1.7 2.1 2.5 V IF=11 mA
Dynamic Resistance dV/dI 20 30 50 ΩIF=11mA
Bandwidth ΒW1 GHz IF=11 mA
Beam Divergence θ18 degree Full width at 1/e2 (3)
Operating temperature Top 0 25 85 oC
Note:
1. Parameters are measured with chip die-bonded to a metal header.
2. All parameters except mentioned are measured at IF=11 mA, 25°C, CW.
3. Beam divergence is defined as the angle of light intensity at Full Width at Half Maximum (FWHM).
850 nm VCSEL Arrays
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VCC-85A1G-H
High performance ion-implant VCSEL chip with higher output power for data
communication
FEATURES:
High performance VCSEL chip designed for communication application●
Low threshold current 7 mA typical●
High output power 10mW @ 27 mA typical●
Optical window diameter 18 µm●
Bandwidth > 1 GHz●
ELECTRO-OPTICAL CHARACTERISTICS:
PARAMETERS SYMBOL MIN TYP MAX UNIT TEST CONDITIONS (1)(2)
Threshold Current Ith 4 7 12 mA
Output Power Po 10 20 mW
Operating Current IOP 27 40 mA
Slope Efficiency dP/dI 0.3 mW/mA IF=11 mA
Wavelength λP830 845 860 nm IF=11 mA
Spectral Width (FWHM) ∆λ 0.5 1 nm IF=11 mA
Threshold Voltage Vth 1.47 1.49 1.55 V IF=0.5 mA
Forward Voltage VF1.7 2.0 2.5 V IF=11 mA
Dynamic Resistance dV/dI 20 40 60 ΩIF=11mA
Bandwidth ΒW1 GHz IF=11 mA
Beam Divergence θ18 degree Full width at 1/e2 (3)
Operating temperature Top 0 25 85 oC
Note:
1. Parameters are measured with chip die-bonded to a metal header.
2. All parameters except mentioned are measured at IF=11 mA, 25°C, CW.
3. Beam divergence is defined as the angle of light intensity at Full Width at Half Maximum (FWHM).
850 nm VCSEL Array & chip with higher output power for free space data communication applications
Outline Dimensions: 250 µm x 305 µm x 100 µm
If you have any comments or request for detail product information, please fill the
Quotation & Information Request Form or mail to: info@lasermate.com.
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850 nm VCSEL Array & chip with higher output power for free space data communication applications
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VCC-85A1G-S
High performance ion-implant VCSEL chip for data communication & sensing
applications
FEATURES:
High performance VCSEL chip designed for data communication & sensing applications●
Low threshold current 5 mA typical●
Optical window diameter 18 µm●
Bandwidth > 1 GHz●
Gaussian beam distribution & no mode hoping @ <1.5mW ●
ELECTRO-OPTICAL CHARACTERISTICS:
PARAMETERS SYMBOL MIN TYP MAX UNIT TEST CONDITIONS (1)(2)
Threshold Current Ith 2 5 6 mA
Output Power Po 1 1.5 mW
Operating Current IOP 15 20 mA
Slope Efficiency dP/dI 0.20 mW/mA IF=11 mA
Wavelength λP830 845 860 nm IF=11 mA
Spectral Width (FWHM) ∆λ 0.5 1 nm IF=11 mA
Threshold Voltage Vth 1.47 1.49 1.55 V IF=0.5 mA
Forward Voltage VF1.7 2.0 2.5 V IF=11 mA
Dynamic Resistance dV/dI 20 30 50 ΩIF=11mA
Bandwidth ΒW1 GHz IF=11 mA
Beam Divergence θ8 10 12 degree Full width at 1/e2 (3)
Operating temperature Top 0 25 85 oC
Note:
1. Parameters are measured with chip die-bonded to a metal header.
2. All parameters except mentioned are measured at IF=11 mA, 25°C, CW.
3. Beam divergence is defined as the angle of light intensity at Full Width at Half Maximum (FWHM).
850 nm VCSEL chip & array for sensing applications
Outline Dimensions: 250 µm x 305 µm x 100 µm
If you have any comments or request for detail product information, please fill the
Quotation & Information Request Form or mail to: info@lasermate.com.
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850 nm VCSEL chip & array for sensing applications
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VCC-85A2G
High performance VCSEL chip for data communication
FEATURES:
High performance VCSEL chip designed for communication application●
Low dependence of electrical and optical characteristics from –10 to 70 oC●
Low threshold current 3 mA typical●
Optical window diameter 15 µm●
Bandwidth > 2 GHz●
Highly reliable with MTTF > 108 hrs @ 25 oC, 12 mA●
ELECTRO-OPTICAL CHARACTERISTICS:
PARAMETERS SYMBOL MIN TYP MAX UNIT TEST CONDITIONS (1)(2)
Threshold Current Ith 3 6 mA
Output Power Po1 2 3 mW IF=12 mA (3)
Operating Current IOP 12 mA Adjustable to establish 1.5 mW
output power
Slope Efficiency η0.25 mW/mA IF=12 mA (4)
Wavelength λP830 845 860 nm IF=12 mA
Forward Voltage VF1.7 1.9 2.3 V IF=12 mA
Breakdown voltage VBD 10 15 V IR=10 µA
Series Resistance RS40 ΩIF=12 mA
Bandwidth ΒW2 GHz IF=12 mA
Beam Divergence θ8 degree IF=12 mA (5)
Note:
1. Parameters are measured with chip die-bonded to a metal header.
2. All parameters except mentioned are measured at IF=12 mA, 25°C, CW.
3. Higher power can be provided under request.
4. Slope efficiency is defined as ∆P/(12-Ith) at 25°C.
5. Beam divergence is defined as the angle of light intensity at Full Width at Half Maximum (FWHM).
Outline Dimensions:
850 nm VCSEL Arrays
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VCC-85A3G-O
High performance oxidation VCSEL chip for data communication
FEATURES:
High performance VCSEL chip designed for communication application●
Low threshold current 1 mA typical●
Optical window diameter 14 µm and oxidation aperture diameter 10 µm ●
Capable to run the speed of 2.5Gbps, 3.125GBd or higher in datacom applications.●
ELECTRO-OPTICAL CHARACTERISTICS:
PARAMETERS SYMBOL MIN TYP MAX UNIT TEST CONDITIONS (1)(2)
Threshold Current Ith 0.5 1 3 mA
Output Power Po1 2 4.5 mW
Operating Current IOP 6 8 12 mA
Slope Efficiency dP/dI 0.38 mW/mA IF=4 mA
Wavelength λP830 845 860 nm IF=4 mA
Spectral Width (FWHM) ∆λ 0.5 1 nm IF=4 mA
Threshold Voltage Vth 1.5 1.6 1.8 V IF=0.3 mA
Forward Voltage VF1.7 2.1 2.5 V IF=4 mA
Reverse Breakdown Voltage Vb 5 10 15 V IF=4 mA
Dynamic Resistance dV/dI 40 55 65 ΩIF=4 mA
Bandwidth ΒW2.4 GHz IF=4 mA
Beam Divergence θ10 16 20 degree Full width at 1/e2 (3)
Operating temperature Top 0 25 85 oC
Note:
1. Parameters are measured with chip die-bonded to a metal header.
2. All parameters except mentioned are measured at IF=4 mA, 25°C, CW operation.
3. Beam divergence is defined as the angle of light intensity at Full Width at Half Maximum (FWHM).
850 nm oxidation VCSEL chip & array
Outline Dimensions: 250 µm x 305 µm x 100 µm
The brighter area is metal. The thickness of chip is 100 µm.
Note: These specifications are subject to change without notice.
If you have any comments or request for detail product information, please fill the
Quotation & Information Request Form or mail to: info@lasermate.com.
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850 nm oxidation VCSEL chip & array
850 nm oxidation VCSEL chip & array
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1 D VCSEL Arrays
For 1D VCSEL array, we offer two kinds of 1D array. One is with 1 x N (N= 2, ...40) 850nm VCSEL array with
bandwidth >2GHz. The other is with 1 x N (N= 2, ...) 850nm VCSEL chip array with bandwidth >1GHz.
The specifications of 1xN (N=2, ...) arrays are same except the length of size. The following is the specification of 1 x 4
VCSEL array as an example. Please contact us for more information if needed.
Model No.: VCA-1X4
Features:
850 nm VCSEL array●
1 x 4 array bar with 250 µm pitch●
Bandwidth > 2 GHz●
Optimized for fiber optic applications●
Picture of single chip
(Note: you can link 4 or 8 pcs from left to right
to become 1x 4 or 1x8 VCSEL array, respectively.)
ELECTRO-OPTICAL CHARACTERISTICS:
PARAMETERS SYMBOL MIN TYP MAX UNIT TEST CONDITIONS (1) (2)
Threshold Current Ith 3 5 mA
Output Power Po0.5 1.5 mW IF =10 mA
Slope Efficiency η0.1 0.2 mW/mA IF =10 mA (3)
850 nm VCSEL Arrays
Wavelength λP830 850 860 nm IF=10 mA
Forward Voltage VF1.7 1.9 2.2 V IF=10 mA
Breakdown Voltage VBD 10 15 V IR=10µA
Serial Impedance RS30 40 ΩIF =10 mA
Beam Divergence θ8 degree IF=10 mA (4)
Bandwidth BW 2 GHz
Notes:
1. Parameters are measured with chip die-bonded to a metal header.
2. All parameters except mentioned are measured at IFF=10 mA, 25oC, CW.
3. Slope efficiency is defined as ∆P/(12-IF) at 25oC.
4. Beam divergence is defined as the angle of light intensity at Full Width at Half Maximum (FWHM).
ABSOLUTE MAXIMUM RATINGS:
PARAMETERS MIN MAX UNIT CONDITIONS
Storage Temperature -40 125 °C
Operating Temperature -20 85 °C
Lead Solder Temperature 260 °C 10 seconds
Continuous Forward Current 40 mA
Continuous Reverse Voltage 10 V
THERMAL CHARACTERISTICS:
PARAMETERS SYMBOL MIN TYP MAX UNIT TEST CONDITIONS
Thermal Resistance Rth 900 °C /W TA=25°C
Ith Temperature Variation ∆Ith -1.5 1.5 mA TA =0~70°C
VF Temperature Coefficient ∆VF/∆T-3.5 -2.5 -1.5 mV/°C TA =0~70°C, IF = 10mA
ηTemperature Coefficient ∆η/∆T-0.40 -0.70 %/°C TA =0~70°C, IF = 10mA
∆λP Temperature Coefficient ∆λP /∆T0.06 nm/°C TA =0~70°C, IF = 10mA
DIMENSIONS:
PARAMETERS SYMBOL MIN TYP MIN UNIT
Number of PIN photodiode elements N 4
Pitch P 250 µm
Chip length (1xN) L 990 1000 1110 µm
Chip width w 240 250 260 µm
Chip thickness t 190 200 210 µm
Square bond pads 100 µm
Window size 17.5 18 18.5 µm
Outline Diagram:
(unit: µm)
850 nm VCSEL Arrays
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850nm VCSEL 2D Array
Model No. VCA-NxN (N = 2, 3, ….)
Features:
850 nm VCSEL 2D array ●
N x N (N= 2, 3, …) array with single element size 250 µm x 435 µm ●
Bandwidth 1 GHz ●
Optimized for fiber optic applications ●
Optical and Electrical Characteristics
Parameter Symbol Min. TYP. Max. Unit Test Condition
Peak Wavelength λp830 845 860 (nm) If = 11mA @ RT
Spectral Width (FWHM) ∆λ --- 0.5 1 (nm) If = 11mA @ RT
Beam Divergence Θ10 18 25 (Deg) Full width at 1/e2
Threshold Voltage Vth 1.47 1.49 1.55 (V) If = 0.5mA @ RT
Forward Voltage Vf1.7 2.0 2.5 (V) If = 11mA @ RT
Threshold Current Ith 2 5 7 (mA)
Peak Optical Power Pmax 3 6 12 (mW)
Peak Power Current Ipmax 20 30 40 (mA)
Slop Efficiency dP/dI 0.2 0.3 0.5 (W/A) If = 11mA @ RT
Dynamic Resistance dV/dI 20 40 60 (Ω) If = 11mA @ RT
Reverse Breakdown Voltage Vb5 10 15 (V)
Operation Temperature Range Top 0 25 70 oC
Maximum Ratings
Parameter Min. Max. Unit
Storage Temperature -30 100 oC
Operating Temperature -30 80 oC
Continuous Forward Current 30 mA
Continuous Reverse Voltage 5 (V)
850nm VCSEL 2D Array
The dimensions of 16x16 VCSEL array is an example for the outline dimensions of our VCSEL NxN
array.
If you have any comments or request for detail product information, please fill the
Quotation & Information Request Form or mail to: info@lasermate.com.
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850nm VCSEL 2D Array
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Connectorized 1310nm FP Laser Diode Modules
Read Model No. T13F-XYZ-WM
T13F = Laser 1310 nm FP laser
X = Package Pigtailed with 9/125 µm SM fiber (X=P), Receptacle (X=R)
Y = Connector For Pigtail:
None (Y=NO);
FC/PC (Y=FC); SC/PC (Y=SC); ST/PC (Y=ST);
FC/APC (Y=FA); SC/APC (Y=CA); ST/APC (Y=TA)
For Receptacle:
FC(Y=FC); SC(Y=SC); ST (Y=ST);
Z = Output power >0.4mW(Z=L); >0.6mW(Z=M); >1mW (Z=H); >1.5mW(Z=E)
W = Pinout configuration A pinout configuration (W=A); B pinout configuration (W=B)
M = Mount No flange (M=0); standard mount (M=1); optional mount (M=2)
Pigtailed laser diode module package Receptacle laser diode module package
Features
Laser diode with multi-quantum-well structure■
Uncooled operation at –40~+85oC■
Built-in InGaAs monitor photodiode■
Hermetically sealed active component ■
Packaging
FC/ST/SC receptacle package with 2-hole flange■
Uncooled fiber pigtailed with optional FC/ST/SC connector ■
Applications
Connectorized 1310nm FP Laser Diode Modules in SC, ST & FC connectors
Design for fiber optic networks■
SONET OC-3/OC-12/OC-24 ■
SDH STM-1/STM-4/STM-8 ■
Stable light source ■
Insertion / Return loss meter■
Absolute Maximum Ratings(Tc=25oC)
Parameter Symbol Value Unit
LD Forward Current IFLD 100 mA
LD Reverse Voltage VRLD 2 V
PD Reverse Current IRPD 2 mA
PD Reverse Voltage VRPD 15 V
Operating Case Temperature Top -40~+85 oC
Storage Temperature Tstg -40~+100 oC
Soldering Temperature Tstg 260 oC
Soldering Time T 10 sec
Optical and Electrical Characteristics(Tc=25oC)
Parameter Symbol Min. Typ. Max. Unit Test condition
Threshold Current Ith - 8 15 mA CW
Fiber Output Power
L
M
H
E
Pf0.4
0.6
1.0
1.5
- - - Coupled 9/125 µm SM fiber,
CW, Ith+20mA
Peak Wavelength λ1280 1310 1340 nm CW, Pf
Spectrum Width ∆λ - 2 5 nm CW, Pf
Forward Voltage VF- 1.2 1.6 V CW, Pf
Rise/Fall Time tr / tf- 0.3 0.5 ns Ibias=Ith , 20~80%
Tracking Error ∆Pf/Pf- ±1.0 - dB APC, -40~+85oC
PD Monitor Current Im0.2 - - mA CW, Pf, VRPD=5V
PD Monitor Dark Current Id- 40 100 nA VRPD=5V
PD Monitor Capacitance C - 10 20 pF VRPD=5V, 1MHz
Please click the below for more information.
Dimensions & Pinout
Connectorized 1310nm FP Laser Diode Modules in SC, ST & FC connectors
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Dimensions & Pinout of Connectorized 1310nm & 1550 nm FP Laser Diode
Modules
Pigtailed (Unit: mm)
Connectorized 1310nm & 1550 nm FP Laser Modules
Connector Options:
None●
FC/PC SC/PC ST/PC ●
FC/APC SC/APC ST/APC●
Receptacle (unit: mm)
Connectorized 1310nm & 1550 nm FP Laser Modules
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Dimensions & Pinout of Connectorized 1310nm & 1550 nm FP Laser Diode
Modules
Pigtailed (Unit: mm)
Connector Options:
None●
FC/PC SC/PC ST/PC ●
FC/APC SC/APC ST/APC●
Connectorized 1310nm & 1550 nm FP Laser Modules
Standard Mount
Optional Mount
Receptacle (unit: mm)
Connectorized 1310nm & 1550 nm FP Laser Modules
Connectorized 1310nm & 1550 nm FP Laser Modules
VCSELs | Communication Lasers | Photodiode Receivers | Fiber Optical Transceivers | Book Store | On Sale Items |
Green, Red, & Infrared Laser Diode Modules | Laser Diodes | Laser Accessories| Laser Products | Electroluminescent Products |
Connectorized 1550nm FP Laser Diode Modules
Read Model No. T15F-XYZ-WM
T15F = Laser 1550 nm FP laser
X = Package Pigtailed with 9/125 µm SM fiber (X=P), Receptacle (X=R)
Y = Connector For Pigtail:
None (Y=NO);
FC/PC (Y=FC); SC/PC (Y=SC); ST/PC (Y=ST);
FC/APC (Y=FA); SC/APC (Y=CA); ST/APC (Y=TA)
For Receptacle:
FC (Y=FC); SC (Y=SC); ST (Y=ST)
Z = Output power >0.4mW (Z=L), >0.6mW (Z=M), >0.8mW (Z=H)
W = Pinout configuration A pinout configuration (W=A); B pinout configuration (W=B)
M = Mount No flange (M=0); standard mount (M=1); optional mount (M=2)
Pigtailed laser diode module package Receptacle laser diode module package
Features
Laser diode with multi-quantum-well structure■
Uncooled operation at –40~+70oC■
Built-in InGaAs monitor photodiode■
Hermetically sealed active component ■
Packaging
FC/ST/SC receptacle package with 2-hole flange■
Uncooled fiber pigtailed with optional FC/ST/SC connector ■
Applications
Design for fiber optic networks■
SONET OC-3/OC-12■
SDH STM-1/STM-4■
Stable light source ■
Connectorized 1550nm FP Laser Diode Module
Insertion / Return loss meter■
Absolute Maximum Ratings(Tc=25oC)
Parameter Symbol Value Unit
LD Forward Current IFLD 100 mA
LD Reverse Voltage VRLD 2 V
PD Reverse Current IRPD 2 mA
PD Reverse Voltage VRPD 15 V
Operating Case Temperature Top -40~+70 oC
Storage Temperature Tstg -40~+85 oC
Soldering Temperature Tstg 260 oC
Soldering Time T 10 sec
Optical and Electrical Characteristics (Tc=25oC)
Parameter Symbol Min. Typ. Max. Unit Test condition
Threshold Current Ith - 20 30 mA CW
Fiber Output Power
L
M
H
Pf
0.4
0.6
0.8
- - -
CW, Ith+20mA
Peak Wavelength λ1520 1550 1580 nm CW, Pf
Spectrum Width ∆λ - 2 5 nm CW, Pf
Forward Voltage VF- 1.0 1.6 V CW, Pf
Rise/Fall Time tr / tf- 0.5 1.0 ns Ibias=Ith ,20~80%
Tracking Error ∆Pf / Pf- ±1.0 - dB APC, -20~+70oC
PD Monitor Current Im0.1 0.8 - mA CW, Pf, VRPD=5V
Please click the below for more information.
Dimensions Outline & Pinout
If you have any comments or request for detail product information, please fill the
Quotation & Information Request Form or mail to: info@lasermate.com.
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Connectorized 1550nm FP Laser Diode Module
VCSELs | Communication Lasers | Photodiode Receivers | Fiber Optical Transceivers | Book Store | On Sale Items |
Green, Red, & Infrared Laser Diode Modules | Laser Diodes | Laser Accessories| Laser Products | Electroluminescent Products |
Pigtailed 1310nm DFB Laser Diode Modules
Read Model No. T13D-XYZ-WM
T13D = Laser 1310 nm DFB laser
X = Package Pigtailed with 9/125 µm SM fiber (X=P)
Y = Connector For Pigtail:
None (Y=NO);
FC/PC (Y=FC); SC/PC (Y=SC); ST/PC (Y=ST);
FC/APC (Y=FA); SC/APC (Y=CA); ST/APC (Y=TA)
Z = Output power >1mW(Z=1); >2mW(Z=2)
W = Pinout configuration A pinout configuration (W=A)
B pinout configuration (W=B)
M = Mount No flange (M=0); standard mount (M=1); optional mount (M=2)
FEATURES
1310 nm InGaAsP/InP MQW-DFB laser diode (LD)● Entirely fabricated by OMVPE● Low threshold current ● Uncooled● Hermetically sealed● High performance over wide temperature range● Power monitoring (InGaAs high speed pin PD)● Available in pigtailed modules with FC/ST/SC APC Connectors●
APPLICATIONS
SONET OC-3/OC-12/OC-24● SDH STM-1/STM-4/STM-8● Stable light source● Insertion / Return loss meter● CATV●
SPECIFICATIONS
Electrical and Optical Characteristics (CW @ T=25oC)
Parameter Symbol Min. Typ. Max. Unit Condition
Threshold current Ith - 8 15 mA CW
Fiber output power Pf1 2 - mW If = Ith +20mA
Central wavelength λc1290 1310 1330 nm CW, Pf
Side-mode suppression ratio SMSR 30 35 - dB CW, Pf
1310nm DFB LASER DIODE MODULE
Operating voltage Vop - 1.2 1.6 V CW, Pf
Rise time / Fall time tr / tf- 0.2 - nsec Ib=Ith 20~80%
Tracking error ∆ Pf / Pf- ±1.0 - dB APC, -40oC~+85oC
Monitor current Im0.1 0.3 - mA CW, Pf, Vrp =5V
Monitor dark current Id- - 10 nA Vrp = 5V
Monitor capacitance C - - 10 pF Vrp = 5V, 1MHZ
Return loss RL 30 dB CW, Pf
Absolute maximum ratings
Parameter Symbol Value Unit
Storage temperature Tstg -40~+100 oC
Operating case temperature Top -40~+85 oC
Peak optical output power Po5 mW
Forward current (LD) IfL 100 mA
Reverse voltage (LD) VrL 2 V
Reverse current (PD) Irp 2 mA
Reverse voltage (PD) VrP 15 V
Soldering temperature Stemp 260 oC
Soldering time Stime 10 sec
Pinout:
Pigtailed (dimensions in mm):
Standard Mount
1310nm DFB LASER DIODE MODULE
VCSELs | Communication Lasers | Photodiode Receivers | Fiber Optical Transceivers | Book Store | On Sale Items |
Green, Red, & Infrared Laser Diode Modules | Laser Diodes | Laser Accessories| Laser Products | Electroluminescent Products |
PIGTAILED 1550 nm DFB LASER DIODE MODULES
Read Model No. T15D-XYZ-WM
T15D = Laser 1550 nm DFB laser
X = Package Pigtailed with 9/125 µm SM fiber (X=P)
Y = Connector None (Y=NO)
FC-PC (Y=FC); SC-PC (Y=SC); ST-PC (Y=ST);
FC-APC (Y=FA); SC-APC (Y=CA); ST-APC (Y=TA)
Z = Output power >1mW(Z=1); >1.5mW(Z=2)
W = Pinout configuration A pinout configuration (W=A)
B pinout configuration (W=B)
M = Mount No flange (M=0); standard mount (M=1); optional mount (M=2)
FEATURES
1550 nm InGaAsP/InP MQW-DFB laser diode (LD)● Entirely fabricated by OMVPE● Low threshold current● Uncooled● Hermetically sealed● High performance over wide temperature range● Power monitoring (InGaAs high speed pin PD)● Available in pigtailed modules with FC/ST/SC APC Connector●
APPLICATIONS
SONET OC-3/OC-12/OC-24● SDH STM-1/STM-4/STM-8● Stable light source● Insertion / Return loss meter● CATV●
SPECIFICATIONS
Electrical and Optical Characteristics (CW @ T=25oC)
Parameter Symbol Min. Typ. Max. Unit Condition
Threshold current Ith - 10 20 mA CW
Fiber output power Pf1 1.5 - mW If = Ith +20mA
Central wavelength λc1530 1550 1570 nm CW, Pf
Side-mode suppression ratio SMSR 30 35 - dB CW, Pf
Operating voltage Vop - 1.3 1.8 V CW, Pf
Rise time / Fall time tr / tf- 0.1 0.2 nsec Ib=Ith 20~80%
Tracking error ∆ Pf / Pf- ±1.0 - dB APC, -20oC~+85oC
Monitor current Im0.1 0.5 - mA CW, Pf, Vrp =5V
Pigtailed 1550nm DFB LASER DIODE MODULE
Monitor dark current Id- - 10 nA Vrp = 5V
Monitor capacitance C - - 10 pF Vrp = 5V, 1MHZ
Return loss RL 30 dB CW, Pf
Absolute maximum ratings
Parameter Symbol Value Unit
Storage temperature Tstg -40~+100 oC
Operating case temperature Top -40~+85 oC
Peak optical output power Po5 mW
Forward current (LD) IfL 100 mA
Reverse voltage (LD) VrL 2 V
Reverse current (PD) Irp 2 mA
Reverse voltage (PD) VrP 15 V
Soldering temperature Stemp 260 oC
Soldering time Stime 10 sec
Pinout:
Pigtailed (dimensions in mm):
Standard Mount
Pigtailed 1550nm DFB LASER DIODE MODULE
