BFS17A,215 - NXP SEMICONDUCTORS

DATA SH EET

Product specification September1995

DISCRETE SEMICONDUCTORS

BFS17A

NPN 3 GHz wideband transistor

September1995 2

NXP Semiconductors Product specification

NPN 3 GHz wideband transistor BFS17A

DESCRIPTION

NPN transistor in a plastic SOT23 package.

APPLICATIONS

It is intended for RF applications such as oscillators

in TV tuners.

PINNING

PIN DESCRIPTION

1base

2 emitter

3 collector

Fig.1 SOT23.

Marking code: E2p.

handbook, halfpage

MSB003

Top view

QUICK REFERENCE DATA

LIMITING VALUES

In accordance with the A bsolute Maxi m um Rating System (IEC 134).

Note to the Quick reference data and the Limiting values

1. Ts is the temperature at the sold ering point of the collector pin.

SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT

VCBO collector-base voltage open emitter 25 V

VCEO collector-emitter voltage open base 15 V

ICDC collector current 25 mA

Ptot total power dissipation up to Ts=70C; note 1 300 mW

fTtransition frequenc y IC=25mA; V

CE = 5 V; f = 500 MHz;

Tamb =25C2.8 GHz

GUM maximum unilateral power gain IC=14mA; V

CE =10V; f=800MHz 13.5 dB

F noise figure IC=2mA; V

CE = 5 V; f = 800 MHz;

Tamb =25C2.5 dB

VOoutput voltage dim =60 dB; IC=14mA; V

CE =10V;

RL=75; Tamb =25C;

f(p+qr) =793.25MHz

150 mV

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

VCBO collector-base voltage open emitter 25 V

VCEO collector-emitter voltage open base 15 V

VEBO emitter-base voltage open collector 2.5 V

ICDC collector current 25 mA

ICM peak collector current 50 mA

Ptot total power dissipation up to Ts=70C; note 1 300 mW

Tstg storage temperature 65 +150 C

Tjjunction temperature 150 C

September1995 3

NXP Semiconductors Product specification

NPN 3 GHz wideband transistor BFS17A

THERMAL CHARACTE RISTI CS

Note

1. Ts is the temperature at the sold ering point of the collector pin.

CHARACTERISTICS

Tj=25C unless otherwise specified.

Notes

1. GUM is the maximum unilateral power gain, assuming S12 is zero and dB.

2. dim =60 dB (DIN 45004B); IC=14mA; V

CE =10V; R

L=75; Tamb =25C;

Vp=V

O; fp= 795.25 MHz;

Vq=V

O6dB; f

q= 803.25 MHz;

Vr=V

O6dB; f

r= 805.25 MHz;

measured at f(p+qr) = 793.25 MHz.

SYMBOL PARAMETER CONDITIONS VALUE UNIT

Rth j-s thermal resistance from junction to soldering point up to Ts=70C; note 1 260 K/W

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

ICBO collector cut-off current IE=0; V

CB =10V 50 nA

hFE DC current gain IC=2mA; V

CE =1V; T

amb =25C25 90 

IC=25mA; V

CE =1V; T

amb =25C25 90 

fTtransition frequenc y IC=25mA; V

CE = 5 V; f = 500 MHz;

Tamb =25C2.8 GHz

Cccollector capacitance IE=0; V

CB =10V; f=1MHz;

Tamb =25C0.7 pF

Ceemitter capacita nce IC=0; V

EB = 0.5V; f=1MHz 1.25 pF

Cre feedback ca pacitance IC=0; V

CE =5V; f=1MHz 0.6 pF

GUM maximum unilateral power gain

note 1 IC=14mA; V

CE =10V; f=800MHz 13.5 dB

F noise figure IC=2mA; V

CE =5V; Z

S=60;

f=800MHz; T

amb =25C2.5 dB

VOoutput voltage note 2 150 mV

GUM 10 log S21 2

11 2

–1S

22 2

–

----------------------------------------------------------

September1995 4

NXP Semiconductors Product specification

NPN 3 GHz wideband transistor BFS17A

Fig.2 Intermodulation distortion and second ord er inte rmodulation distortion test cir cu i t.

L1 = L3 = 5 H Ferroxcube choke.

L2 = 3 turns 0.4 mm copper wir e; winding pitch 1 mm; internal diame ter 3 mm.

handbook, full pagewidth

MBB251

18 Ω

1.5 nF

10 kΩL2

1 nF

75 Ω

input

270 Ω

1 nF

1.5 nF

1 nF

0.68 pF

3.3 pF

DUT

75 Ω

output

VCC

VBB

Fig.3 DC current gain as a fu nction of

collector current.

VCE =1V; T

amb =25C.

handbook, halfpage

100

010 30

MEA395

20 IC (mA)

hFE

Fig.4 Collector capacitance as a function of

collector-base voltage.

IE= 0; f = 1 MHz; Tamb =25C.

handbook, halfpage MEA903

0.5

04 8 12 16

VCB (V)

(pF)

September1995 5

NXP Semiconductors Product specification

NPN 3 GHz wideband transistor BFS17A

Fig.5 Transition frequency as a function of

collector current.

VCE = 5 V; f = 500 MHz; Tamb =25C.

handbook, halfpage MEA904

20 40

IC (mA)

(GHz)

Fig.6 Minimum noise figure as a func tion of

collector current.

VCE =5V; Z

s=60; f = 800 MHz; Tamb =25C.

handbook, halfpage MEA902

10 20

(dB)

IC (mA)

September1995 6

NXP Semiconductors Product specification

NPN 3 GHz wideband transistor BFS17A

PACKAGE OUTLINE

UNIT A1

max. bpcDE e1HELpQwv

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

04-11-04

06-03-16

IEC JEDEC JEITA

mm 0.1 0.48

0.38 0.15

0.09 3.0

2.8 1.4

1.2 0.95

1.9 2.5

2.1 0.55

0.45 0.1

0.2

DIMENSIONS (mm are the original dimensions)

0.45

0.15

SOT23 TO-236AB

detail X

vMA

0 1 2 mm

scale

1.1

0.9

Plastic surface-mounted package; 3 leads SOT23

September1995 7

NXP Semiconductors Product specification

NPN 3 GHz wideband transistor BFS17A

DATA SHEET STATUS

Notes

1. Please consult the most recently issued document b efore initiating or completing a design.

2. The product status of device(s) described in this document may have changed since this do cument was published

and may differ in case of multiple devices. The latest product status information is available on th e Internet at

URL http://www.nxp.com.

DOCUMENT

STATUS(1) PRODUCT

STATUS(2) DEFINITION

Objective data sheet Development This doc ument contains data from the objective specification for pro duct

development.

Preliminary data sheet Qualification This document contains data from the preliminary specification.

Product data sheet Production This document contains the pr oduct specification.

DEFINITIONS

Product specification  The information and da ta

provided in a Product data she et shall define the

specification of the product as agreed between NXP

Semiconductors and its custo m er, unless NXP

Semiconductors and cus to mer have explicitly agreed

otherwise in writing. In no event however, shall an

agreement be valid in which th e NXP Semiconductors

product is deemed to offer functions and qualities beyond

those described in the Product data sheet.

DISCLAIMERS

Limited warranty and liability  Information in this

document is believed to be accurate and reliable.

However, NXP Semiconduc tors does not give any

representations or warranties, expressed or implied, as to

the accuracy or completeness of such information and

shall have no liability for the consequences of use of such

information.

In no event shall NXP Semiconductors be liable for any

indirect, incidental, punitive, special or consequential

damages (including - without limitation - lost profits, lost

savings, busin es s inte rru ption, costs related to the

removal or replacement of any products or rework

charges) whether or not such damages are based on tort

(including negligence), warranty, breach of contract or any

other legal theory.

Notwithstanding any damages that customer might incur

for any reason whatsoever, NXP Semiconductors’

aggregate and cumulative liability towards customer for

the products described herein shall be limited in

accordance with the Terms and conditions of commercial

sale of NXP Semiconductors.

Right to make changes  NXP Semiconductors

reserves the right to make changes to information

published in this document, including without limitation

specifications and prod uct descriptions, at any time and

without notice. This document supersedes and replaces all

information su pplied prior to the publication hereof.

Suitability for use  NXP Semiconductors products are

not designed, authorized or warranted to be suitable for

use in life support, life-critical or safety-critic al systems or

equipment, nor in applications where failure or malfunction

of an NXP Semiconductors product can reasonably be

expected to res ult in personal injur y, death or severe

property or environmental damage. NXP Semiconductors

accepts no liability for inclusion and/or use of NXP

Semiconductor s pr od ucts in such equipment or

application s and therefore such inclusion and /or use is at

the customer’s own risk.

Applications  Applications that are described herein for

any of these products are for illustrative purposes only.

NXP Semiconductors makes no representation or

warranty that such applications will be suitable for the

specified use without further testing or modification.

Customers are responsible for the design and operation of

their applications and products using NXP

Semiconductors products, and NXP Semiconductors

accepts no liability for any assistance with applications or

customer product design. It is customer’s sole

responsibility to determine whether the NXP

Semiconductors pro du ct is su itable and fit for the

customer’s applications and products planned, as well as

for the planned application and use of customer’s third

party customer(s). Customers should provide appropriate

design and opera ting safeguards to minimi ze the ris ks

associated with their ap plications and produ cts .

September1995 8

NXP Semiconductors Product specification

NPN 3 GHz wideband transistor BFS17A

NXP Semiconductors does not accept any liability related

to any default, damage, cost s or problem which is based

on any weakness or default in the customer’s applications

or products, or the applic ation or use by customer’s third

party customer(s). Customer is responsible for doing all

necessary testing for the customer’s applications and

products using NXP Semic on ductors produc ts in or de r to

avoid a default of the app lications and the products or of

the application or use by cust omer’s third party

customer(s). NXP does not accept any liability in this

respect.

Limiting values  Stress above one or more limiting

values (as defined in the Absolute Maximum Ratings

System of IEC 60134) will cause permanent damage to

the device. Limiting values are stress ratings only and

(proper) operat ion of the device at these or any other

conditions above those given in the Recommended

operating conditions section (if present) or the

Characteristics sections of this document is not warranted.

Constant or repeated exposure to limiting values will

permanently and irreversibly affect the quality and

reliability of the device.

Terms and conditions of commercial sale  NXP

Semiconductors products are sold subje ct to th e general

terms and conditio ns of commercial sale, as published at

http://www.nxp.com/profile/terms, unless other wis e

agreed in a valid written individual agreement. In case an

individual agreeme nt is co nc luded only the terms and

conditions of the resp ective agreement shall apply. NXP

Semiconductors hereby expressly objects to applyi ng the

customer’s general terms and conditions with regard to the

purchase of NXP Semicon ductors produc ts by customer.

No offer to sell or license  Nothing in this document

may be interpreted or construed as an offer to sell products

that is open for accepta nc e or the grant, conveyance or

implication of any license under any copyrights, patents or

other industrial or intellectual property rights.

Export control  This document as well as the item(s)

described herein may be subject to export control

regulations. Export might require a prior authorization from

national authorities.

Quick refer ence data  The Quick reference data is an

extract of th e product data given in the Li miting values and

Characteristics sections of this document, and as such is

not complete, exhaus tive or legally binding.

Non-automotive qualified products  Unless this data

sheet expressly states that this specific NXP

Semiconductors product is au tomotive qualified, the

product is not suitable fo r automotive use. It is neither

qualified nor te sted in accorda nce with automot ive testing

or application requirements. NXP Semiconductors accepts

no liability for inclusion and/or use of non-automotive

qualified prod ucts in automotive equip ment or

applications.

In the event that customer uses the product for design-in

and use in automotive applications to automotive

specifications and standards, customer (a) shall use the

product without NXP Semiconductors’ warranty of the

product for suc h aut omo tive applications, use and

specifications, and (b) whenever customer uses the

product for automotive applications beyond NXP

Semiconductors’ specifications such use sha ll be solely at

customer’s own ris k, an d (c) customer fully inde m nif i es

NXP Semiconductors for an y liability, damages or failed

product clai ms r esult ing fr om cus to mer d esi gn an d us e of

the product for automotive ap plic ations beyond NXP

Semiconductors ’ st andard warranty and NXP

Semiconductors’ product specifications.

NXP Semiconductors

provides High Performance Mixed Signal and Standard Product

solutions that leverage its leading RF, Analog, Power Management,

Interface, Security and Digital Processing expertise

Contact information

For additional information p lease visit: http://www.nxp.com

For sales offices addr esses send e-mail to : salesaddresses@nxp.com

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information presented in this do cum en t d oes not form part o f an y q uotation or contra ct, is b elieve d t o b e a ccur ate a nd re liable and may be changed

without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license

under patent- or other industrial or intellectual property rights.

Customer notification

This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal

definitions and disclaimer s. No cha ng es were made to the technical co ntent, except for package outline

drawings which were updated to the latest version.

Printed in The Netherlands R77/02/pp9 Date of release: September1995