Preliminary Product Brief May 2004 AGR09030XUM 30 W, 865 MHz--895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09030XUM is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor (LDMOS) RF power transistor suitable for cellular band, code-division multiple access (CDMA), global system for mobile communication (GSM), enhanced data for global evolution (EDGE), and time-division multiple access (TDMA) single and multicarrier class AB wireless base station amplifier applications. This device is manufactured on an advanced LDMOS technology, offering state-of-the-art performance and reliability. Available in a plastic overmold package capable of delivering a minimum output power of 30 W, it is ideally suited for today's RF power amplifier applications. Parameter Thermal Resistance, Junction to Case: AGR09030XUM Sym Value Unit RJC 2.0 C/W Table 2. Absolute Maximum Ratings* Parameter Drain-source Voltage Gate-source Voltage Drain Current--Continuous Total Dissipation at TC = 25 C: AGR09030XUM Derate Above 25 C: AGR09030XUM Operating Junction Temperature Storage Temperature Range Sym Value VDSS 65 VGS -0.5, +15 ID 4.25 Unit Vdc Vdc Adc PD 87.5 W -- TJ 0.5 200 W/C C TSTG -65, +150 C * Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. These are absolute stress ratings only. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of the data sheet. Exposure to absolute maximum ratings for extended periods can adversely affect device reliability. AGR09030XUM Table 3. ESD Rating* Figure 1. Available Package Features Typical performance ratings are for IS-95 CDMA, pilot, sync, paging, traffic codes 8--13: -- Output power (POUT): 7 W. -- Power gain: 18.35 dB. -- Efficiency: 27%. -- Adjacent channel power ratio (ACPR) for 30 kHz bandwidth (BW): (750 kHz offset: -45 dBc) (1.98 MHz offset: -60 dBc). -- Input return loss: -10 dB. High-reliability, gold-metalization process. High gain, efficiency, and linearity. Integrated ESD protection. Si LDMOS. Industry-standard packages. 30 W minimum output power. AGR09030XUM HBM MM CDM Minimum (V) 500 50 1500 Class 1B A 4 * Although electrostatic discharge (ESD) protection circuitry has been designed into this device, proper precautions must be taken to avoid exposure to ESD and electrical overstress (EOS) during all handling, assembly, and test operations. Agere employs a human-body model (HBM), a machine model (MM), and a charged-device model (CDM) qualification requirement in order to determine ESD-susceptibility limits and protection design evaluation. ESD voltage thresholds are dependent on the circuit parameters used in each of the models, as defined by JEDEC's JESD22-A114B (HBM), JESD22-A115A (MM), and JESD22-C101A (CDM) standards. Caution: MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. AGR09030XUM 30 W, 865 MHz--895 MHz, N-Channel E-Mode, Lateral MOSFET Preliminary Product Brief May 2004 AGR09030XUM Package Dimensions Controlling dimensions are in millimeters. 0.65 (0.03) 1.1 (0.043) 2 PLACES 0.315 (0.013) 0.315 (0.013) 1.00 (0.039) 1. DRAIN 16.00 11.00 / 11.30 MAX (0.630) (0.433 / 0.448 MAX) 1.27 (0.0495) AGERE AGR09030XUM YYWWL XXXXX ZZZZZZZZ 3. SOURCE 2.95 REF 6.00 0.20 (0.115) (0.234 0.0078) 2.50 (0.098) 2. GATE 0.61 x 0.61 MAX x 45 (0.025 x 0.025) 2.90 (0.114) 2 PLACES 11.00 2.0 (0.434 0.078) 11.35 (0.448) 2.24 (0.088) TOP VIEW 15.90 / 16.20 MAX (0.626 / 0.6378 MAX) BOTTOM VIEW 2.95 (0.115) 14 1 0.254 (0.099) 3.35 REF (0.131) 0.90 (0.036) 3.15 0.15 (0.123 0.006) 1.60 (0.063) 0.015 (0.0006) SIDE VIEW END VIEW millimeters Note: Dimensions are shown in ------------------------- . ( inches ) Label Notes: M before the part number denotes model program. X before the part number denotes engineering prototype. The last three letters of the part number denote wafer technology, flange type, and packaging technology. YYWWL is the date code including place of manufacture: year year work week (YYWW), L = location (P = Phillipines). XXXXX = five-digit wafer lot number. ZZZZZZZZ = Assembly lot number. 2 Agere Systems Inc. Preliminary Product Brief May 2004 AGR09030XUM 30 W, 865 MHz--895 MHz, N-Channel E-Mode, Lateral MOSFET RF Power Product Information For product and application information, please visit our website: http://www.agere.com/rfpower. For additional information, contact your Agere Systems Account Manager or the following: INTERNET: http://www.agere.com E-MAIL: docmaster@agere.com N. AMERICA: Agere Systems Inc., Lehigh Valley Central Campus, Room 10A-301C, 1110 American Parkway NE, Allentown, PA 18109-9138 1-800-372-2447, FAX 610-712-4106 (In CANADA: 1-800-553-2448, FAX 610-712-4106) ASIA: Agere Systems Hong Kong Ltd., Suites 3201 & 3210-12, 32/F, Tower 2, The Gateway, Harbour City, Kowloon Tel. (852) 3129-2000, FAX (852) 3129-2020 CHINA: (86) 21-54614688 (Shanghai), (86) 755-25881122 (Shenzhen) JAPAN: (81) 3-5421-1600 (Tokyo), KOREA: (82) 2-767-1850 (Seoul), SINGAPORE: (65) 6778-8833, TAIWAN: (886) 2-2725-5858 (Taipei) EUROPE: Tel. (44) 1344 296 400 Agere Systems Inc. reserves the right to make changes to the product(s) or information contained herein without notice. No liability is assumed as a result of their use or application. Agere is a registered trademark of Agere Systems Inc. Agere Systems and the Agere logo are trademarks of Agere Systems Inc. Copyright (c) 2004 Agere Systems Inc. All Rights Reserved May 2004 PB04-094RFPP (Replaces PB04-071RFPP)