AGR09030XUM - Agere Systems, Inc.

Preliminary Product Brief

May 2004

AGR09030XUM

30 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET

Introduction

The AGR09030XUM is a high-vo ltage, g old- metal-

ized, laterally diffused metal oxide semiconductor

(LDMOS) RF power transistor suitable for cellular

band, code-division multiple access (CDMA), global

system for mobile communication (GSM), enhanced

data for global evolution (EDGE), and time-division

multiple access (TDMA) single and multicarrier class

AB wireless base station amplifier applications. This

device is manufactured on an advanced LDMOS

technology, offering state-of-the-art performance and

reliability. Available in a plastic overmold package

capable of delivering a minimum output power of

30 W, it is ideally suited for today's RF power ampli-

fier applications.

AGR09030XUM

Figure 1. Available Package

Features

■Typical performance ratings are for IS-95 CDMA,

pilot, sync, paging, traffic codes 8—13:

— Output powe r (POUT): 7 W.

— Power gain: 18.35 dB.

— Efficiency: 27%.

— Adjacent ch annel power ratio (ACPR) for

30 kHz bandwidth (BW):

(750 kHz offset: –45 dBc)

(1.98 MHz offset: –60 dBc).

— Input return loss: –10 dB.

■High-reliability, gold-metalization process.

■High gain, efficiency, and linearity.

■Integrated ESD protection.

■Si LDMOS.

■Industry-standard packages.

■30 W minimum output power.

Table 1. Thermal Characteristics

Table 2. Absolute Maximum Ratings*

* Stress es in exce ss of the absolute maximum ratings can cause

permanent damage to the device. These are absolute stress rat-

ings only. Functional operation of the device is not implied at

these or any other conditions in excess of those given in the

operational sections of the data sheet. Exposure to absolute

maximum ratings for extended periods can adversely affect

device reliability.

Tab le 3. ESD Rating*

* Although electrostatic discharge (ESD) protection circuitry has

been designed into this device, proper precautions must be

taken to avoid exposure to ESD and electrical overstress (EOS)

during all handling, assembly, and test operations. Agere

employs a human-body model (HBM), a machine model (MM),

and a charged-device model (CDM) qualification requirement in

order to determine ESD-susceptibility limits and protection

design evaluation. ESD voltage thresholds are dependent on the

circuit parameters used in each of the models, as defined by

JEDEC's JESD22- A114B (H BM) , JES D22-A 115A (M M), and

JESD22-C101A (CDM ) standards.

Caution: MOS devices are susceptible to damage from elec-

trostatic charge. Reasonable precautions in han-

dling and packaging MOS devices should be

observed.

Parameter Sym Value Unit

Therma l Resi stance,

Junction to Case:

AGR09030XUM RθJC 2.0 °C/W

Parameter Sym Value Unit

Drain-source V oltage VDSS 65 Vdc

Gate-source V oltage VGS –0.5, +15 Vdc

Drain Current—Continuous ID4.25 Adc

Total Dissipation at TC = 25 °C:

AGR09030XUM PD87.5 W

Derate Above 25 °C:

AGR09030XUM — 0.5 W/°C

Operating Junction Tempera-

ture TJ200 °C

S torage Temperature Range TSTG –65, +150 °C

AGR09030XUM Minimum (V) Class

HBM 500 1B

MM 50 A

CDM 1500 4

2Agere Systems Inc.

30 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET May 2004

AGR09030XUM Preliminary Product Brief

AGR09030XUM Package Dimensions

Controlling dimensions are in millimeters.

Note: Dimensions are shown in .

Label Notes:

■M before the part number denotes model program. X before the part number denotes engineering prototype.

■The last three letters of the part number denote wafer technology, flange type, and packaging technology.

■YYWWL is the date code including place of manufacture: year year work week (YYWW), L = location (P = Phillipines).

■XXXXX = fi v e-digit wa fe r l o t n u m be r.

■ZZZZZZZZ = Assembly lot number.

SIDE VIEW

TOP VIEW BOTTOM VIEW

END VIEW

6.00 ± 0.20

(0.234 ± 0.0078)

2.95 REF

11.00 ± 2.0

(0.434 ± 0.078)

2.24

(0.088)

0.61 x 0.61 MAX x 45º

2.50

(0.098)

2.90

(0.114)

2 PLACES

1.00

(0.039)

0.315

(0.013)

0.65

(0.03)

1.1

(0.043)

2 PLACES

11.00 / 11.30 MAX

(0.433 / 0.448 MAX)

16.00

(0.630)

1.27

(0.0495)

(0.025 x 0.025)

(0.115)

0.315

(0.013)

15.90 / 16.20 MAX

(0.626 / 0.6378 MAX)

3.35 REF

14º ± 1º

0.90

(0.036)

0.254

(0.099)

(0.131)

2.95

(0.115)

3.15 ± 0.15

(0.123 ± 0.006)

1.60

(0.063)

0.015

(0.0006)

1. DRAIN

2. GATE

11.35

(0.448)

3. SOURCE

AGR09030XUM

AGERE

YYWW L XXXXX

ZZZZZZZZ

illimete

inches()

--------------------

----

Preliminary Product Brief AGR090 30XUM

May 2004 30 W, 865 MHz—895 MHz, N-Chann el E-Mode, Lateral MOSFET

May 2004

PB04-094RFPP (Replaces PB04-071RFPP)

Agere Systems Inc. reserves the right to make changes to the product(s) or information contained herein without notice. No liability is assumed as a result of their use or application.

Agere is a registered trademark of Agere Systems Inc. Agere Systems and the Agere logo are trademarks of Agere Systems Inc.

For additional information, contact your Agere Systems Account Manager or the follow ing:

INTERNET: http://www.agere.com

E-MAIL: docmaster@agere.com

N. AMERICA: Agere Systems Inc., Lehigh Valley Central Campus, Room 10A-301C, 1110 American Parkway NE, Allentown, PA 18109- 9138

1-800-372-2447, FAX 610-712-4106 (In CANADA: 1-800-553-2448, FAX 610-712-4106)

ASIA: Agere Systems Hong Kong Ltd., Suites 3201 & 3210-12, 32/F, Tower 2, The Gateway, Harbour City, Kowloon

Tel. (852) 3129-2000, FAX (852) 3129-2020

CHINA: (86) 21-54614688 (Shanghai), (86) 755-25881122 (Shenz hen)

JAPAN: (81) 3-5421-1600 (Tokyo), KOREA: (82) 2-767-1850 (Seoul), SINGAPORE: (65) 6778- 8833, TAIWA N: (886) 2-2725-5858 (Taipei)

EUROPE: Tel. (44) 1344 296 400

RF Power Product Information

For product and application information, please visit our website: http://www.agere.com/rfpower.