APT33N90JCCU2
APT33N90JCCU2 – Rev 0 August, 2009
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5
G
S
D
K
ISOTOP®
Absolute maximum ratings
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
Symbol Parameter Max ratings Unit
VDSS Drain - Source Breakdown Voltage 900 V
Tc = 25°C 33
ID Continuous Drain Current Tc = 80°C 25
IDM Pulsed Drain current 75 A
VGS Gate - Source Voltage ±20 V
RDSon Drain - Source ON Resistance 120 mΩ
PD Maximum Power Dissipation Tc = 25°C 290 W
IAR Avalanche current (repetitive and non repetitive) 8.8 A
EAR Repetitive Avalanche Energy 2.9
EAS Single Pulse Avalanche Energy 1940 mJ
Application
• AC and DC motor control
• Switched Mode Power Supplies
• Power Factor Correction
• Brake switch
Features
•
- Ultra low RDSon
- Low Miller capacitance
- Ultra low gate charge
- Avalanche energy rated
• SiC Schottky Diode
- Zero reverse recovery
- Zero forward recovery
- Temperature Independent s w i t c hi ng behavior
- Positive temperature coefficient on VF
• ISOTOP® Package (SOT-227)
• Very low stray inductance
• High level of integration
Benefits
• Outstanding performance at high frequency operation
• Stable temperature behavior
• Very rugged
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Easy paralleling due to positive TC of VCEsat
• RoHS Compliant
ISOTOP® Boost chopper
Super Junction MOSFET
SiC chopper diode
VDSS = 900V
RDSon = 120mΩ max @ Tj = 25°C
ID = 33A @ Tc = 25°C
K
D
G
S
APT33N90JCCU2
APT33N90JCCU2 – Rev 0 August, 2009
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All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
VGS = 0V,VDS = 900V Tj = 25°C 100
IDSS Zero Gate Voltage Drain Current VGS = 0V,VDS = 900V Tj = 125°C 500 µA
RDS(on) Drain – Source on Resistance VGS = 10V, ID = 26A 100 120 mΩ
VGS(th) Gate Threshold Voltage VGS = VDS, ID = 3mA 2.5 3 3.5 V
IGSS Gate – Source Leakage Current VGS = ±20 V, VDS = 0V 100 nA
Dynamic Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
Ciss Input Capacitance 6.8
Coss Output Capacitance VGS = 0V ; VDS = 100V
f = 1MHz 0.33 nF
Qg Total gate Charge 270
Qgs Gate – Source Charge 32
Qgd Gate – Drain Charge
VGS = 10V
VBus = 400V
ID = 26A 115
nC
Td(on) Turn-on Delay Time 70
Tr Rise Time 20
Td(off) Turn-off Delay Time 400
Tf Fall Time
Inductive Switching (125°C)
VGS = 10V
VBus = 600V
ID = 26A
RG = 7.5Ω 25
ns
Eon Turn-on Switching Energy 0.9
Eoff Turn-off Switching Energy
Inductive switching @ 25°C
VGS = 10V ; VBus = 600V
ID = 26A ; RG = 7.5Ω 0.75 mJ
Eon Turn-on Switching Energy 1.3
Eoff Turn-off Switching Energy
Inductive switching @ 125°C
VGS = 10V ; VBus = 600V
ID = 26A ; RG = 7.5Ω 0.85 mJ
SiC chopper diode ratings and characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
VRRM Maximum Peak Repetitive Reverse Voltage 1200 V
Tj = 25°C 32 200
IRM Maximum Reverse Leakage Current VR=1200V Tj = 175°C 56 1000 µA
IF DC Forward Current Tc = 100°C 10 A
Tj = 25°C 1.6 1.8
VF Diode Forward Voltage IF = 10A Tj = 175°C 2.3 3 V
QC Total Capacitive Charge IF = 10A, VR = 600V
di/dt =500A/µs 40 nC
f = 1MHz, VR = 200V 96
C Total Capacitance f = 1MHz, VR = 400V 69 pF
APT33N90JCCU2
APT33N90JCCU2 – Rev 0 August, 2009
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Thermal and package characteristics
Symbol Characteristic Min Typ Max Unit
CoolMOS 0.43
RthJC Junction to Case Thermal Resistance SiC Diode 1.65
RthJA Junction to Ambient (IGBT & Diode) 20 °C/W
VISOL RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz 2500 V
TJ,TSTG Storage Temperature Range -40 150
TL Max Lead Temp for Soldering:0.063” from case for 10 sec 300 °C
Torque Mounting torque (Mounting = 8-32 or 4mm Machine and terminals = 4mm Machine) 1.5 N.m
Wt Package Weight 29.2 g
SOT-227 (ISOTOP®) Package Outline
31.5 (1.240)
31.7 (1.248)
Dimensions in Millimeters and (Inches)
7.8 (.307)
8.2 (.322)
30.1 (1.185)
30.3 (1.193)
38.0 (1.496)
38.2 (1.504)
14.9 (.587)
15.1 (.594)
11.8 (.463)
12.2 (.480)
8.9 (.350)
9.6 (.378)
Hex Nut M4
(4 places)
0.75 (.030)
0.85 (.033)
12.6 (.496)
12.8 (.504)
25.2 (0.992)
25.4 (1.000)
1.95 (.077)
2.14 (.084)
*
r = 4.0 (.157)
(2 places) 4.0 (.157)
4.2 (.165)
(2 places)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
3.3 (.129)
3.6 (.143)
Emitter terminals are shorted
internally. Current handling
capability is equal for either
Emitter terminal.
Typical CoolMOS performance Curve
Hard
switching
ZCS
ZVS
0
50
100
150
200
250
10 15 20 25 30
I
D
, Drain Curren t (A)
Frequency (kHz)
Operating F requency vs Drain Current
V
DS
=600V
D=50%
R
G
=7.5Ω
T
J
=125°C
T
C
=75°C
Switchi ng Energy vs Current
Eon
Eoff
0
1
1
2
2
5 10152025303540
I
D
, Drain Current (A)
Eon and Eoff (mJ)
V
DS
=600V
R
G
=7.5Ω
T
J
=125°C
L=100µH
ON resistance vs Temperature
0.5
1.0
1.5
2.0
2.5
3.0
25 50 75 100 125 150
T
J
, Junction Temperature (°C)
R
DS(on)
, Drain to S o urce ON resistance
(Normalized)
Switch ing Energy vs Gate Resistance
Eon
Eoff
0
1
2
3
5 101520253035
Gate Resistance (Ohms)
Switching E n ergy (mJ)
V
DS
=600V
I
D
=26A
T
J
=125°C
L=100µH
Source Gate
Drain
Cathode
APT33N90JCCU2
APT33N90JCCU2 – Rev 0 August, 2009
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0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0
0.1
0.2
0.3
0.4
0.5
0.00001 0.0001 0.001 0.01 0.1 1 10
rectangular Pulse Duration (Seconds)
Thermal Impedance (°C/W)
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
5V
6V
0
40
80
120
0 5 10 15 20
V
DS
, Drain to Source Voltage (V)
I
D
, Drai n Curren t (A )
Low Vol tage Output Characteristics
V
GS
=20, 8V
0
5
10
15
20
25
30
35
25 50 75 100 125 150
T
C
, Case Temperature (°C)
I
D
, DC Drain Cur re n t (A )
DC Drain Current vs Case Temperature
900
925
950
975
1000
25 50 75 100 125
T
J
, Junction Temperature (°C)
Breakdown Voltage vs Temperature
BV
DSS
, Drain to Source Breakdown
Voltage
Maxim um S afe Operating Area
10 ms
100 µs
1
10
100
1000
1 10 100 1000
V
DS
, Drain to Source Voltage (V)
I
D
, Drain Cur r e n t (A)
limited b
y
R
D
S
on
Single pulse
T
J
=150°C
T
C
=25°C
Ciss
Crss
Coss
1
10
100
1000
10000
100000
0 25 50 75 100 125 150 175 200
V
DS
, Drain to Source Voltage (V)
C, Capacitance (pF)
Capaci ta n c e v s Dr a i n to Source Vol tag e
0
2
4
6
8
10
0 50 100 150 200 250 300
Gate Charge (nC)
V
GS
, Gate to Sou rce Voltage (V )
Gate Charge vs Gate to Source Voltage
V
DS
=400V
I
D
=26A
T
J
=25°C
APT33N90JCCU2
APT33N90JCCU2 – Rev 0 August, 2009
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Typical SiC Chopper diode performance Curve
Maxim um Effective Transient Thermal Impedance, Junction to Case vs Pulse Dur ation
0.9
0.7
0.5
0.3
0.1
0.05 Single Pulse
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
0.00001 0.0001 0.001 0.01 0.1 1 10
Rectangular Pulse Dur atio n (Secon d s)
Thermal Impedance (°C/W)
Forw ard Char acteri sti cs
T
J
=25°C
T
J
=75°C
T
J
=125°C
T
J
=175°C
0
4
8
12
16
20
00.511.522.533.5
V
F
Forward Voltage (V)
I
F
Forward Current (A)
Reverse Characteristics
T
J
=25°C
T
J
=75°C
T
J
=125°C
T
J
=175°C
0
25
50
75
100
400 600 800 1000 1200 1400 1600
V
R
Reverse Voltage (V)
I
R
Reverse Current (µA)
Capacitance vs.Reverse Vol tage
0
100
200
300
400
500
600
700
1 10 100 1000
V
R
Reverse Voltage
C, Capacitance (pF)
“COOLMOS™ comprise a new family of transistors developed by Infineon Technologies AG. “COOLMOS” is a trademark of Infineon
Technologies AG”.
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsem i's products are covere d by one or more of U.S patents 4,895,8 10 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,50 3,786 5,256,583 4,748,103
5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,3 52,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262
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