1/9August 2000
IRF620
IRF620FP
N-CHAN NEL 200V - 0.6 Ω - 6A TO-220/FP
PowerMesh™II MOSFET
(1)ISD ≤6A, di/dt ≤300A/ µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.
(** ) Li m i ted onl y by M aximum T em perature Allowed
INTERNAL SCHEMATIC DIAGRAM
■TYPICAL RDS(on) = 0.6 Ω
■EXTREMELY HI GH dv /d t C APABILITY
■100% AVALANCHE TESTED
■NEW HIGH VOLTAGE BENCHMARK
■GATE CHARGE MINIMIZED
DESCRIPTION
The PowerMESH™II is the evolution of the first
generation of MESH OVERLAY™. The layout re-
finements introduced greatly improve t he Ron*area
figure of merit while keeping the device at t he lea d-
ing edge for what concerns switching speed, gate
charge and ruggedne ss.
APPLICATIONS
■HIGH CURRENT, HIGH SPEED SWITCHING
■SWIT H MODE PO WER SUPPLIES (SMPS)
■DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNI NTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVES
ABSOLUTE MAXIMUM RATINGS
(•) Pulse width li mited by saf e operating area
TYPE VDSS RDS(on) ID
IRF620
IRF620FP 200 V
200 V < 0.8 Ω
< 0.8 Ω6 A
6 A
Symbol Parameter Value Unit
IRF620 IRF620FP
VDS Drain-source Voltage (VGS = 0) 200 V
VDGR Drain-gate Voltage (RGS = 20 kΩ)200 V
VGS Gate- sourc e Vol tage ±20 V
IDDrain Current (continuous) at TC = 25°C 6 6 (**) A
IDDrain Current (continuous) at TC = 100°C 3.8 3.8 (**) A
IDM (
l
)Drain Current (pulsed) 24 24 A
PTOT Total Dissipation at TC = 25°C 70 30 W
Derating Factor 0.56 0.24 W/°C
dv/dt (1) Peak Diode Recovery voltage slope 5 5 V/ns
VISO Insulation Winthstand Voltage (DC) -- 2000 V
Tstg Storage Temperature –65 to 150 °C
TjMax. Operating Junction Temperature 150 °C
123
TO-220
123
TO-220FP
IRF620 / FP
2/9
THE RMAL DA TA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
ON (1)
DYNAMIC
TO-220 TO-220FP
Rthj-case Thermal Resistance Junction-case Max 1.79 4.17 °C/W
Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W
Rthc-sink Thermal Resistance Case-sink Typ 0.5 °C/W
TlMaximum Lead Temperature For Soldering Purpose 300 °C
Symbol Paramet er Max Value Unit
IAR Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max) 6A
E
AS Single Pulse Avalanche Energy
(starting Tj = 25 °C, ID = IAR, VDD = 50 V) 160 mJ
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V(BR)DSS Drain-source
Breakdown Voltage ID = 250 µA, VGS = 0 200 V
IDSS Zero Gate Voltage
Drain Current (VGS = 0) VDS = Max Rating 1µA
V
DS = Max Rating, TC = 125 °C 50 µA
IGSS Gate-body Leakage
Current (VDS = 0) VGS = ±20 V ±100 nA
Symbol Parameter Test Conditions Min. Typ. Max. Unit
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA 234V
R
DS(on) Static Drain-source On
Resistance VGS = 10 V, ID = 3 A 0.6 0.8 Ω
ID(on) On State Drain Current VDS > ID(on) x RDS(on)max,
VGS =10 V 6A
Symbol Parameter Test Conditions Min. Typ. Max. Unit
gfs (1) Forward Transconductance VDS > ID(on) x RDS(on)max,
ID=3A 1.5 4 S
Ciss Input Capacitance VDS = 25 V, f = 1 MHz, VGS = 0 350 pF
Coss Output Capacitance 70 pF
Crss Reverse Transfer
Capacitance 35 pF
3/9
IRF620 / FP
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHIN G ON
SWITCHIN G OFF
SOURCE DRAIN DIODE
Note: 1. Pul sed: Pul se duration = 300 µs, duty c ycle 1.5 % .
2. Pulse wi dth limi ted by safe operating area.
Symbol Parameter Test Conditions Min. Typ. Max. Unit
td(on) Turn-on Delay Time VDD = 100 V, ID = 3 A
RG= 4.7Ω VGS = 10 V
(see test circuit, Figure 3)
18 ns
trRise Time 30 ns
QgTotal Gate Charge VDD = 160 V, ID = 6 A,
VGS = 10 V 19 27 nC
Qgs Gate-Source Charge 4.5 nC
Qgd Gate-Drain Charge 7.5 nC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
tr(Voff) Off-voltage Rise Time VDD = 160 V, ID = 6 A,
RG=4.7Ω, VGS = 10 V
(see test circuit, Figure 5)
40 ns
tfFall Time 10 ns
tcCross -over Time 65 ns
Symbol Parameter Test Conditions Min. Typ. Max. Unit
ISD Source-drain Current 6 A
ISDM (2) Source-drain Current (pulsed) 24 A
VSD (1) Forward On Voltage ISD = 6 A, VGS = 0 1.5 V
trr Reverse Recovery Time ISD =6 A, di/dt = 100 A/µs
VDD = 100 V, Tj = 150°C
(see test circuit, Figure 5)
155 ns
Qrr Reverse Recovery Charge 700 nC
IRRM Reverse Recovery Current 9 A
Safe Op erating Area for TO-220 Safe Op erating Area for TO-220 FP
IRF620 / FP
4/9
Transconductance
Transfer Characteristic s
Output Characteri stics
Thermal Impedence for TO-220
Static Drain-source On Resis tance
Thermal Impedence for TO-220FP
5/9
IRF620 / FP
Capacitance Variations
Norma lized On Resistan ce vs Temp eratur e
Source-drain Diode Forward Characteristics
Norma lized Gate Thresh ol d Voltage vs Temp .
Gate Charge vs Gate-so urc e Voltage
IRF620 / FP
6/9
Fig. 5: Test Circuit For Inductive Lo ad Switching
And Diode Recovery Ti m es
Fig. 4: Gate Charge test Circuit
Fig. 2: Unclamped Induc tive Wav eformFig. 1: Unclamped Inductive Load Test Circuit
Fig. 3: Switching Times Test Circuit For
Resistive Load
7/9
IRF620 / FP
DIM. mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107
D1 1.27 0.050
E 0.49 0.70 0.019 0.027
F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.067
F2 1.14 1.70 0.044 0.067
G 4.95 5.15 0.194 0.203
G1 2.4 2.7 0.094 0.106
H2 10.0 10.40 0.393 0.409
L2 16.4 0.645
L4 13.0 14.0 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.2 6.6 0.244 0.260
L9 3.5 3.93 0.137 0.154
DIA. 3.75 3.85 0.147 0.151
L6
A
C
D
E
D1
F
G
L7
L2
Dia.
F1
L5
L4
H2
L9
F2
G1
TO-220 MECHANICAL DATA
P011C
IRF620 / FP
8/9
L2
A
B
D
E
H
G
L6
F
L3
G1
123
F2
F1
L7
L4
L5
DIM. mm. inch
MIN. TYP MAX. MIN. TYP. MAX.
A 4.4 4.6 0.173 0.181
B 2.5 2.7 0.098 0.106
D 2.5 2.75 0.098 0.108
E 0.45 0.7 0.017 0.027
F 0.75 1 0.030 0.039
F1 1.15 1.7 0.045 0.067
F2 1.15 1.7 0.045 0.067
G 4.95 5.2 0.195 0.204
G1 2.4 2.7 0.094 0.106
H 10 10.4 0.393 0.409
L2 16 0.630
L3 28.6 30.6 1.126 1.204
L4 9.8 10.6 .0385 0.417
L5 2.9 3.6 0.114 0.141
L6 15.9 16.4 0.626 0.645
L7 9 9.3 0.354 0.366
Ø 3 3.2 0.118 0.126
TO-220FP MECHANICA L DATA
9/9
IRF620 / FP
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