Datasheet PT62SCMD12 SIC MOSFET driver R08 15 September 2014
© 2014 Prodrive Technologies B.V. 1 of 12
PT62SCMD12
Dual 1200V SIC MOSFET driver
Features:
Designed for driving CREE CAS300M12BM2 SIC MOSFETS modules
Low jitter: typical 1ns
+20V/-6V gate driving
Over-current protected
Switching frequencies up to 125kHz
Adjustable dead and blanking time
Dead-time generator
Output currents up to +/- 20A
Under and over voltage lock out
High dV/dt immunity
No optocouplers
RS422 input interface
Large power supply range, from 15V up to 24V
Driver ID
Associated SIC MOSFET module
PT62SCMD12 R01
CAS300M12BM2
Overview:
X10
VIN+,HIGH
VIN-,HIGH
VIN+,LOW
VIN-,LOW
GND
STATUS
VPOWER
DIFFERENTIAL
RECEIVER
DIFFERENTIAL
RECEIVER
DEAD TIME
GENERATOR
STATUS
CONTROLLER
CONTROLLER
BOARD
SUPPLIES
MODULATOR
HIGH SIDE
MODULATOR
LOW SIDE
FAULT
DETECTION
CON TROLLER
CONTROLLER
DE-MODULATOR
ISOLATED
SUPPLY
STATUS
CONTROLLER
DE-MODULATOR
STATUS
CONTROLLER
CON TROLLER
X22
X21
X32
X31
VGATE,HI GH
GNDHI GH
VGATE,LO W
GNDLOW
E NABLE
X33 VDRAIN,LO W
X23 VDRAIN,HI GH
E NABLE
OCP
OCP
VOLTAGE
MONITOR
R9 01
R9 02
GND
Dead time
settin g
VD,LO W
VD,HI GH
VOLTAGE
MONITOR
CBLA NK
ROCP
CBLA NK
ROCP
OCP settings
OCP settings
RGATE,OF F
VOLTAGE
MONITOR
RESET
GNDLOW
GNDHI GH
CGS
CGS
RGATE,ON
RGATE,ON
RGATE,OF F
SECONDARY LOW SIDE
SECONDARY HIGH SIDE
PRIMARY
SIDE
Datasheet PT62SCMD12 SIC MOSFET driver R08 15 September 2014
© 2014 Prodrive Technologies B.V. 2 of 12
1. Electrical characteristics
1.1. Operating range
Within the operating range the driver operates as described in the functional description. Unless
otherwise noted all voltages refer to GND.
Table 1-1, Operating range
Item
Description
Min
Typ
Max
Unit
Remarks
VPOWER
Supply voltage
14.5
-
26
[V]
-
VD,HIGH
VD,LOW
Inputs OCP
0
-
1700
[V]
Referred to
respectively
GNDHIGH and
GNDLOW
|VGND,HIGH/dt|
|VGND,LOW/dt|
Maximum voltage transients @ the
secondary ground
-
-
100
kV/µs
-
TAMB
Operating temperature range, no
airflow
-40
-
85
[°C ]
No condensation
1.2. Electrical characteristics
Table 1-2, Input power
Item
Description
Min
Typ
Max
Unit
Remarks
PIN,OPERATIONAL
Power consumption PT62SCMD121)
-
12
-
[W]
fSWITCH=100kHz
PIN,IDLE
Idle Power consumption
PT62SCMD12
-
3.5
4
[W]
-
Note1) In combination with module CAS300M12BM2
Table 1-3, Differential RS422 inputs
Item
Description
Min
Typ
Max
Unit
Remarks
VINX,X
Single ended input level
-7
-
12
[V]
-
ΔVIN,X
Differential input high-threshold
voltage
0.7
-
-
[V]
ΔVIN,X= ΔVIN+,X - ΔVIN-,X
Differential input low-threshold
voltage
-
-
-0.2
[V]
RID
Differential input impedance
120
[Ohm]
-
Table 1-4, Logic output
Item
Description
Min
Typ
Max
Unit
Remarks
VSTATUS = OK
Status output voltage when
the status of the driver is OK
4.7
-
-
[V]
-
VSTATUS = NOK
Status output voltage when
the status of the driver is
NOK
-
-
0.8
[V]
-
Table 1-5, Gate drivers
Item
Description
Min
Typ
Max
Unit
Remarks
VGATE,HIGH = HIGH
VGATE,LOW = HIGH
High level output voltage,
VPOWER=24V
18
20
22
[V]
Referred to
respectively
GNDHIGH and
GNDLOW
VGATE,HIGH = LOW
VGATE,LOW = LOW
Low level output voltage,
VPOWER=24V
-8
-6
-4
[V]
VGATE,HIGH = HIGH
VGATE,LOW = HIGH
Peak output current
capability1)
20
-
-
[A]
-
Note1) With RGATE,ON = RGATE,OFF = 0Ohm
Datasheet PT62SCMD12 SIC MOSFET driver R08 15 September 2014
© 2014 Prodrive Technologies B.V. 3 of 12
Table 1-6, Reset
Item
Description
Min
Typ
Max
Unit
Remarks
VRESET
Input voltage range RESET
input
-0.3
-
6
[V]
-
VRESET = HIGH
Reset high input voltage
3.5
-
-
[V]
-
VRESET = LOW
Reset low input voltage
-
-
1.5
[V]
-
tRESET
Pulse width of RESET for
clearing errors
10
-
-
[us]
-
Table 1-7, Dynamical characteristics @ TAMB = 25°C
Item
Description
Min
Typ
Max
Unit
Remarks
tON,PROP
Turn on propagation delay
-
100
125
[ns]
See section 1.2.1
for definitions
tOFF,PROP
Turn off propagation delay
-
100
125
[ns]
tON,RISE
Turn on rise time PT62SCMD121)
-
400
500
[ns]
tOFF,FALL
Turn off fall time PT62SCMD121)
-
250
300
[ns]
Δt
Delay mismatch (high and low side turn
on and off) 2)
-
0.25
2.5
[ns]
|tJITTER|
Absolute jitter of turn off and turn on
delay2)
-
1
2.5
[ns]
-
fSWITCH
Switching frequency
DC
-
125
[kHz]
Limited by
POUT,AVG
tDEAD,PROG
Programmable dead time
0
-
1000
[ns]
See section 1.3.2
and section 4.4
tBLANKING
Blanking time. This is the time in
between turning on the MOSFET and
monitoring the VDS.
1
-
-
[us]
-
tSTARTUP
Start-up timing
-
75
100
[ms]
See section 1.2.1
for definitions
Note1) In combination with module CAS300M12BM2
Note2) Measured without connected module/load and RGATE,ON = RGATE,OFF = 0Ohm
1.2.1. Timing definitions
Figure 1-1, Propagation delay
Figure 1-2, Rise/fall time
Figure 1-3, Delay mismatch
Figure 1-4, Start-up timing
VIN
VGATE
tON,PROP tOFF,PROP
20%
80%
VIN
VGATE
80%
20%
tON,RISE tOFF,FALL
VIN,HIGH
Δt
VIN,LOW
VGATE,HIGH
VGATE,LOW
tSTARTUP
VIN,X
VGATE,X
VPOW ER
15V
Datasheet PT62SCMD12 SIC MOSFET driver R08 15 September 2014
© 2014 Prodrive Technologies B.V. 4 of 12
1.3. Protections
1.3.1. Under Voltage Lock Out (UVLO)
Both secondary sides are equipped with an UVLO indirectly monitoring the gate voltages.
Table 1-8, UVLO
Item
Description
Min
Typ
Max
Unit
Remarks
VUVLO,SEC
Secondary side under voltage lock out
16
18
-
[V]
Only positive
voltage is
monitored
The primary side is equipped with an UVLO and an OVLO (Over Voltage Lock Out) monitoring an
internally generated supply voltage.
1.3.2. Dead-time generator
The driver has an on-board dead-time generator which overrules the input signals when the dead-
time of the applied PWM signals (tDEAD,IN) becomes larger than the set dead-time (tDEAD,PROG). Note
that when the dead-time generator has to intervene, the jitter increases to a maximum of 10ns.
The dead time is by default set at 500ns, but can be changed by modifying R901 and R902. See
chapter 4 for application information.
Table 1-9 Dead time settings
R901
R902
tDEAD
unit
Remarks
not assembled
not assembled
1000
[ns]
-
not assembled
assembled
500
[ns]
Default setting
assembled
not assembled
250
[ns]
-
assembled
assembled
-
[ns]
Dead time disabled
1.3.3. Over Current Protection (OCP)
The driver features VDS monitoring for protecting the modules against overcurrent. Both the
blanking time (time the monitor is not-active when switching on), as the VDS level (proportional with
IDS) is user-adjustable.
Table 1-10 VDS monitoring
Item
Description
Min
Typ
Max
Unit
Remarks
VDS,TRIP
Default VDS trip level PT62SCMD12
-
4
-
[V]
See Figure 1-6
tBLANKING
Default Blanking time
0.75
1
1.25
[us]
tSHUTDOWN
Delay between a detected over current
and a shutdown of the driver
-
-
1
[us]
tSTATUS
Delay between an over current
protection and a low going STATUS at
the primary side.
-
-
100
[us]
-
Datasheet PT62SCMD12 SIC MOSFET driver R08 15 September 2014
© 2014 Prodrive Technologies B.V. 5 of 12
Figure 1-5, Timing VDS monitor under nominal
conditions
Figure 1-6, Timing VDS monitor when an over
current is detected
1.3.4. Errors and stating
In the table below the LED and the output status is listed for all situations.
Table 1-11 Optical status interfacing
State
PRIMARY SIDE
ERROR
HIGH SIDE
ERROR
LOW SIDE
ERROR
LED PRIMARY
SIDE
LED SECONDARY
SIDE
OUTPUT STATUS
POWER
ERROR
HIGH
LOW
VGATE,HIGH
VGATE,LOW
Operational
-
-
-
OFF
As input
As input
Primary error
INIT
error2)
OFF
OFF
0V
0V
UVLO
or
OVP
-
-
OFF
LOW
LOW
Secondary error
-
UVLO
or
OCP
-
OFF
LOW
LOW
-
-
UVLO
or
OCP
OFF
LOW
LOW
Note1) The symbols and are representing blinking LED’s
Note2) Initialization error of the driver
1.4. Gate resistance
The applied gate resistances are listed in the table below.
Table 1-12 Gate resistances
Item
Driver ID
unit
PT62SCMD12
RGATE,ON
5
[Ohm]
RGATE,OFF1)
2.5
[Ohm]
CGS
18
[nF]
Note1) Note that the effective turn-off resistance is specified
VIN
VDS
MONITOR
VGATE
VDS
VDRIVER
OCP
VDS,TRIP
VIN
VDS
MONITOR
VGATE
VDS
VDRIVER
SHORT
tBLANKING
OCP
SHORT
DETECTED
tSHUTDOWN
VDS,TRIP
Datasheet PT62SCMD12 SIC MOSFET driver R08 15 September 2014
© 2014 Prodrive Technologies B.V. 6 of 12
1.5. Electrical isolation
Table 1-13 Grade of insulation1)
Circuit
PRIMARY
SECUNDARY_LOW
SECUNDARY_HIGH
PRIMARY
-
BASIC
BASIC
SECUNDARY_LOW
BASIC
-
BASIC
SECUNDARY_HIGH
BASIC
BASIC
-
Note1) Based on NEN-EN-IEC 60950
Table 1-14 Clearance distances
Circuit
PRIMARY
SECUNDARY_LOW
SECUNDARY_HIGH
PRIMARY
-
11.6mm
11.6mm
SECUNDARY_LOW
11.6mm
-
6.2mm
SECUNDARY_HIGH
11.6mm
6.2mm
-
Table 1-15 Creepage distances
Circuit
PRIMARY
SECUNDARY_LOW
SECUNDARY_HIGH
PRIMARY
-
11.6mm
11.6mm
SECUNDARY_LOW
11.6mm
-
23.2mm
SECUNDARY_HIGH
11.6mm
23.2mm
-
A safety test is applied at every driver produced, used test parameters are listed below.
Table 1-16 Safety test
Item
Description
Min
Typ
Max
Unit
Remarks
VTEST
Test voltage primary to secondary side
-
5
-
[kVDC]
1s, non-
repetitive
Datasheet PT62SCMD12 SIC MOSFET driver R08 15 September 2014
© 2014 Prodrive Technologies B.V. 7 of 12
2. Electrical interfaces
2.1. MOSFET terminals
Table 2-1 MOSFET terminals
Terminal ID
Mnemonic driver
Pinning @ MOSFET
module
Connector style
X21
VGATE,HIGH
4
Faston 2.8mm x 0.5mm
receptacle
X22
GNDHIGH
5
X23
VDRAIN,HIGH
3
X31
GNDLOW
7
X32
VGATE,LOW
6
X33
VDRAIN,LOW
1
2.2. Input connector
Table 2-2 Input connector
Connector ID
Pin#
Mnemonic driver
Interface
X10
1
VIN+,HIGH
2 x 4pin boxed header, angled, lockable & keyed.
2.54mm pitch
2
VIN-,HIGH
3
RESET
4
GND
5
VIN+,LOW
6
VIN-,LOW
7
STATUS
8
VPOWER
7
8
5
6
3
4
1
2
PCB
Datasheet PT62SCMD12 SIC MOSFET driver R08 15 September 2014
© 2014 Prodrive Technologies B.V. 8 of 12
3. Mechanical characteristics
Top view
Figure 3-1, Dimensions, top view
Bottom view
Figure 3-2, Bottom view
Side view
Figure 3-3, Dimensions, side view
130mm
68mm
10mm
48mm
15mm
6mm
5mm
135mm
M2.5
X21
5mm
X10
X22
X31
X32
30mm
10mm 5mm
10mm
X23
4.5mm
2.7mm
X33
LED
HIGH
SIDE
LED
LOW
SIDE
CBLANK
ROCP
CBLANK
ROCP
R901
R902
TOP VIEW
5mm 28mm
6mm
POWER
ERROR
1.6mm
8mm
X10
25mm 10mm
Datasheet PT62SCMD12 SIC MOSFET driver R08 15 September 2014
© 2014 Prodrive Technologies B.V. 9 of 12
4. Application notes
4.1. Input connection.
Connector
For the input connector (X10) a boxed header from Wurth is applied (612 008 217 21), a possible
mating wire connector is for example the 71600-608LF from FCI.
Wiring
For increasing the immunity of the PWM input signals the driver is equipped with differential inputs.
For reaching maximum performance the differential pairs should be physically kept close to each
other by using for example a flat cable with twisted differential pairs.
Although the differential concept already gives additional immunity it is still recommended to keep
the PWM signal lines away from conductors carrying large currents. Shielding of the wires will
increase the immunity further.
4.2. Input power.
The ramp-up of the supply voltage during start-up should be smooth and no dips should occur.
Figure 4-1, Behavior input voltage during start-up
4.3. Disabling OCP
If it, for any reason, is desired to disable the OCP then this can be achieved by interconnecting:
X31 with X33 and
X22 with X23
Note that when X23 and/or X33 are not connected the driver will always enter its error stated when
PWM is applied.
VPOW ER VPOW ER
PREFERRED NOT-PREFERRED
Datasheet PT62SCMD12 SIC MOSFET driver R08 15 September 2014
© 2014 Prodrive Technologies B.V. 10 of 12
4.4. Modifying dead-time and OCP settings
In this section information is given for modifying dead time, VDS trip level and/or blanking time.
Modifying dead-time
The dead time can be programmed by assembling the resistors R901 and R902 (0603 package).
Values of the resistors should be 220Ohm or lower. The possible settings are listed below.
Figure 4-2, Location R901 and R902
Datasheet PT62SCMD12 SIC MOSFET driver R08 15 September 2014
© 2014 Prodrive Technologies B.V. 11 of 12
Modifying blanking time
The blanking time can be modified by changing CBLANK (0603 package). Settings are listed below,
locations are shown in Figure 4-2. For CBLANK a capacitor with NP0 dielectric is recommended, the
voltage rating should be at least 25V.
Table 4-1 tBLANKING setting
CBLANK
t,BLANKING
unit
Remarks
56pF
0.5
[us]
-
120pF
1
[us]
Default setting
390pF
3
[us]
-
560pF
5
[us]
-
Modifying VDS,TRIP setting
The VDS trip-level can be modified by changing ROCP (1206 package). Settings are listed below,
locations are shown in Figure 4-3.
Table 4-2 VDS,TRIP setting PT62SCMD12
ROCP
Unit
VDS,TRIP
unit
Remarks
1550
[Ohm]
1
[V]
-
1000
[Ohm]
2
[V]
-
560
[Ohm]
3
[V]
-
47
[Ohm]
4
[V]
Default setting PT62SCMD12
Datasheet PT62SCMD12 SIC MOSFET driver R08 15 September 2014
© 2014 Prodrive Technologies B.V. 12 of 12
Figure 4-3, Location ROCP and RBLANK
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