TOSHIBA {DISCRETE/OPTO} b? de ffsos72so anosena eg ff 909725 1N4446~1N4449= 0 TOSHIBA (DISCRETE/OPTO) Silicon Epitaxial Planar Type ~ ogee He 67C 09293 DT~O3-09F TENTATIVE COMMUNICATION AND INDUSTRIAL APPLICATIONS, HIGH VOLTAGE, ULTRA HIGH SPEED SWITCHING APPLICATIONS. FEATURES; Low Forward Voltage i Smail Total Capacitance : Fast Reverse Recovery Time ; Vp=1.0V (Max,) Cr=4pF (Max.) trr=4ns (Max ' ) Hermetically Seaided Miniature Glass Package. MAXIMUM RATINGS (Ta=25C) Unit in mm 260MIN, " BROMAX, An? MAX, CHARACTERISTIC SYMBOL RATING | UNIT CATHODE MARK Maximum (Peak) Reverse Voltage Vem 100 Vv Reverse Voltage VR 75 Vv gas al x Maximum (Peak) Forward Current TeM 450 mA g Average Forward Current To 150 mA . Surge Current (1s) IpsM 2 A SabEo Douse Power Dissipation P 300 mW BIAJ Bo-40 Junction Temperature Tj 200 c || rosu1Ba 1~RALA Storage Temperature Range Tstg -65~200] c | Weight : 0.148 ELECTRICAL CHARACTERISTICS (Ta=25C) CHARACTERISTIC SYMBOL TEST CONDITION MIN. | TYP. | MAX. | UNIT 3N5446/7 | Vp(1) | Tr=20mA - |0.79 | 1.0 v 1N4448 Ve(2) | Ip=5mA 0.62 10.67 |0.72 v Forward Voltage Ve(3) | Tr=100mA - 0.9 | 1.0 v 14449 vp(4) | Ip=5mA 0.63 {0.68 j0.73 | Vv Vp(5) | Ip=30mA - 0.8 | 1.0 v IR(1) | VR=20V - - 25 | nA Reverse Current Ig(2) | Vp=20V, Ta=150C - - 50 uA In(3) | VR275V - [- BA Total Capacitance 1N4446/8 Cr(1) | Vr=0, f=1MHz - 1.5 pF 1N4447/9 CT(2) | Vp=0, =1MHz - 1.5 pF =10mA, Vp=6V Reverse Recovery Time trr R100, Lee=iaa - - 4 ns TOSHIBA CORPORATION 128 ee pen ee ren nen rte ime he