3 WH TEXAS INSTRUMENTS Discrete Semiconductors Small Signal Planar CV (continued) Absolute Maximum Rating hFE at Collector Current 38s CV Commercial] Case Min. | 3 & Comments Number | Equivalent |Outline|Polarity) VCB VCE VEBI hFE hFE Ic fT a v Vv Vf min. max. mA {MHz | CV7722 | BFY50 TOS NPN 80 35 6 30 100 150 50 e General purpose CV7723 | BFY51 TOS NPN 60 30 6 40 120 150 50 e Amplifier CV7724 | BFY52 TOS NPN 40 20 6 60 200 150 50 e CV7725 | BFY50 TO5 NPN 80 35 6 30 _ 150 50 e General Purpose Amplifier and CV7726 | BFYS1 TOS NPN 60 30 6 35 _ 150 50 e Saturated Switches CV7727 | BFY52 TOS NPN 40 20 6 50 _ 150 50 e 4 Amp hFE Minimum 10 CV7735 | 2N1711 TOS NPN 75 50 7 100 300 150 70 e High Gain Medium Power Amplifier CV7738 | 2N2484 TO18 | NPN 60 60 6 100 500 0.01 60 e Very High Gain Low Noise Low Level Amplifier CV7774 | 2N2194 TOS NPN 60 49 5 20 60 150 50 e General Purpose Amplifier CV7775 | 2N2243A | TOS NPN 120 80 7 40 120 450 50 e High Voltage Amplifier CV7748 .|| 2N2221* |TO018 | NPN 25 25 4 38 162 10 420 e - CV7749 | 2N2906* |TO18 | PNP 25 25 4 38 162 10 120 e CV7750 | 2N2221A*|TO18 | NPN 45 35 4 38 162 10 120 e CV7751 | 2N2906A*| TO18 | PNP 45 35 4 38 162 10 120 e High Frequency, Low Power Switching and CV7752 | 2N2222A*|TO18 | NPN 45 35 4 75 250 10 120 e Amplifier Applications. Fully Complementary Range CV7753 | 2N2907A*/|TO18 | PNP 45 35 4 76 250 10 120 e CV7754 | 2N2222* |T0O18 | NPN 25 25 #4 75 250 10 120 e CV7755 | 2N2907* | TO18 | PNP 25 25 4 75 250 10 120 e CV7763 | 2N2218 TO5 NPN | 60 30 5 40 120 150 | 250 CV7764 | 2N2219 |TOS | NPN | 60 30 5 |100 300 150 | 250 High Frequency, Medium Power NPN Amplifier and CV7765 | 2N2218A |TO5 | NPN | 75 40 6 | 40 120 150 ! 250 e High Current Switches CV7766 | 2N2219A | TOS NPN 78 40 6 100 300 150 250 e CV7767 | 2N2221 TO18 | NPN 60 30 5 40 120 150 250 e CV7768 | 2N2222 TO18 | NPN 60 30 5 100 300 150 250 e . cv7769 | 2N2221A |TO18 | NPN | 75 40 6 | 40 120 150 | 250] e from Version of CV7763-66 CV7770 | 2N2222A |TO18 | NPN 75 40 6 100 300 150 | 250 e CVv9023 | BCY72* TO18 | PNP 25 20 3 30 _ 10 150 Low Level PNP Amplifier CVv9507 | BFX29* TOS PNP 65 65 65 50 _ 10 100 Medium Power PNP Amplifier and Switch Cv9543 | BCY70 TO18 | PNP 25 20 #5 35 - 10 100 Low Level PNP Amplifier and Switch Cv9790 | BFX29 TOS PNP 60 60 5 50 200 10 | 100 Medium Power PNP Amplifier and Switch66 ig TEXAS INSTRUMENTS Discrete Semiconductors High Current NPN Amplifiers Zz Maximum ratings Device 5 BV BV BV hFe1 hFe2 ft | VCE(sat) | Available Type & | Case |] CBO CEO EBOJICM] Ic Ic Tc in Notes Vv v V-f{ mA] mA min. max. mA_ min. max.|/MHz] A Vv TO18 BFT39 NPN| TO39]/ 90 80 5 |1000| 100 50 250]1000 20 |100 {1.0 | 1.6 | BFT29 | hFE 25 min at1mA BFT40 NPN} TO3S| 70 60 5 {1000} 100 75 250)1000 25 (100 {1.0 | 1.0) BFT30 | HFE 45 min attmA BFT41 NPN| TO39} 60 50 5 |1000{ 100 100 300|1000 25 (100 |1.0 | 1.0] BFT31_{ NFE45 min at1mA BFY50 NPN] To39| 80 35 6 |1000| 150 30 j1000 15 | 60]1.0 | 1.0! BFT53 | HNFE 20min at 10mA BFY51 NPN] TO39] 60 30 6 /1000| 150 40 {1000 15 | 50/1.0 | 16| BFT54 | hFE30 min at 10mA BFY52 NPN] To39! 40 20 6 /1000| 150 60 {1000 15 | 50]1.0 | 16 { BFT5S | HFE30 min at 10mA BC142 NPN| To39/ 80 60 5 | 800; 200 20 ~| | 40[02 | 04 BC300 NPN| TO39{120 80 7 |1000{ 150 40 240}; 500 20 |120 (0.15 | 05 . 8c301 | NPN] To39] 90 60 7 |1000]} 150 40 240] 500 20 |120 |0.15| 05 FE 20 min at 100A ds at -<150 mA BC302 NPN] TO39} 60 45 7 |1000/ 150 40 240] 500 20 /120 |0.15; 0.5 ~ 2N697 NPN| T039/ 60 40 5 [1000] 150 40 120; | 50 1015] 15 2N1613 | NPN{ TO39| 75 50 7 |1000) 7150 40 120} 500 20 | 60 ]0.15]} 15 FE 20 min at 100pA 2N1711_ | NPN| TO39| 75 50 7 [1000] 150 100 300] 500 40 | 70 {015 | 1.5 hFE 35 min at 100pA 2n1890 | NPN| To39/100 60 7 | !/ 150100 300] | 60 |0.15/} 5.0 2n1893 | NPN} TO391120 80 7 | 500/150 40 120| 10 35 | 50 |0.15/ 5.0 FE 20 min at 100yA 2N2243A | NPN| T039|120 80 7 1000} 150 40 120] 10 30 | 60 ]0.15] 0.25 PNP Amplifiers and Fast Switches zB Maximum ratings Device 5 BV BV BV hFe1 hFE2 ft | VCE(sat) Max.| Max. | Max. Type | Case (CBO ceo EBOlIcmM] ic Ic min. [ Ic ton ts | toff Notes Vv Vv Vi mA] mA min. max.| mA min. max.] MHz] mA Vv ns ns ns 2n2411 | pNP | To18| 25 20 51300} 10 20 60{ 50 10 {140| 10 | 020] 25 | 90 | 100 | FE 10 min at 50pA. 2N2412 | PNP | TO1s| 25 20 5/300] 10 40 120| 50 20 J]140] 10 | 0.20] 25 | 90 | 100 | HFE 20 min at S0yA 2n2894 |pNP | TO18| 12 12 4{|200| 10 30 | 30 40 150} 400 | 10 | 015} 60 | | 90 | hFE 25 min at 100mA 2N3012 |PNP | TO18/.12. 12 4{200/ 10 25 J| 30 30 120/400] 10 | 015] 60 | | 75 | WFE 30 min at 100mA 2N3576 [pNP | TO18] 20 15 {|200) 10 40 120)100 10 ] 400} 10 } 015] 30 | 30} 50 | VCE(sat) 0.5V max at 100mA 2N3829 | PNP | TO52/ 35 20 20/500] 10 25 J 30 30 120) 350} 10 | 0.18 | 25 | 50 | 65 | hFE 25 min at 100mA 2N4260 |pNP |TO72115 15 45] 30| 10 30 160, 30 20 |1600/ 10 | 0.35 { 1.2] | 12