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Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
gfs IC= I C90; VCE = 10 V, 3.3 5.0 S
Pulse test, t £ 300 ms, duty cycle £ 2 %
IC(on) VGE = 15 V, VCE = 10 V 50 A
Cies 920 pF
Coes VCE = 25 V, VGE = 0 V, f = 1 MHz 65 p F
Cres 14 pF
Qg40 nC
Qge IC = I C90, VGE = 15 V, VCE = 0.5 VCES 13 nC
Qgc 18 nC
td(on) 30 ns
tri 30 ns
td(off) 100 420 ns
tfi 310 470 ns
Eoff 1.9 2.9 mJ
td(on) 30 ns
tri 30 ns
Eon 0.12 mJ
td(off) 150 ns
tfi 510 ns
Eoff 3.0 mJ
RthJC 1.25 K/W
Inductive load, TJ = 25°C
IC = 16A, VGE = 15 V, L = 300 mH
VCE = 0.8 VCES, RG = 22 W
Switching times may increase for VCE
(Clamp) > 0.8 • VCES, higher TJ or
increased RG
Inductive load, TJ = 125°C
IC = 16 A, VGE = 15 V, L = 300 mH
VCE = 0.8 VCES, RG = 22 W
Switching times may increase for VCE
(Clamp) > 0.8 • VCES, higher TJ or
increased RG
IXSH 16N60U1
Reverse Diode (FRED) Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol Test Conditions min. typ. max.
VFIF = IC90, VGE = 0 V, 1.75 V
Pulse test, t £ 300 ms, duty cycle d £ 2 %
IRM IF = IC90, VGE = 0 V, -diF/dt = 64 A/ms 2.5 A
trr VR = 360 V TJ =100°C 165 ns
IF = 1 A; -di/dt = 50 A/ms; VR = 30 V TJ =25°C3550ns
RthJC 2.5 K/W
TO-247 AD (IXSH) Outline
Dim. Millimeter Inches
Min. Max. Min. Max.
A 19.81 20.32 0.780 0.800
B 20.80 21.46 0.819 0.845
C 15.75 16.26 0.610 0.640
D 3.55 3.65 0.140 0.144
E 4.32 5.49 0.170 0.216
F 5.4 6.2 0.212 0.244
G 1.65 2.13 0.065 0.084
H - 4.5 - 0.177
J 1.0 1.4 0.040 0.055
K 10.8 11.0 0.426 0.433
L 4.7 5.3 0.185 0.209
M 0.4 0.8 0.016 0.031
N 1.5 2.49 0.087 0.102
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025