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© 2000 IXYS All rights reserved 98532 (7/98)
Features
• Latest generation HDMOSTM process
• International standard package
• Guaranteed Short Circuit SOA
capability
• Low VCE(sat)
- for low on-state conduction losses
• High current handling capability
• MOS Gate turn-on
- drive simplicity
• Fast fall time for switching speeds
up to 20 kHz
Applications
• AC motor speed control
• Uninterruptible power supplies (UPS)
• Welding
Advantages
• High power density
IXSH 16N60U1
Low VCE(sat) IGBT
with Diode
Short Circuit SOA Capability
Symbol Test Conditions Maximum Ratings
VCES TJ= 25°C to 150°C 600 V
VCGR TJ= 25°C to 150°C; RGE = 1 MW600 V
VGES Continuous ± 20 V
VGEM Transient ± 30 V
IC25 TC= 25°C32A
IC90 TC= 90°C16A
ICM TC= 25°C, 1 ms 5 2 A
SSOA VGE= 15 V, TJ = 125°C, RG = 150 W ICM = 32 A
(RBSOA) Clamped inductive load, L = 300 mH @ 0.8 VCES
tSC VGE= 15 V, VCE = 360 V, TJ = 125°C 5ms
(SCSOA) RG = 82 W, non repetitive
PCTC= 25°C 100 W
TJ-55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
Weight 2 g
Maximum lead temperature for soldering 300 °C
1.6 mm (0.062 in.) from case for 10 s
Maximum tab temperature for soldering for 10s 260 °C
G = Gate, C = Collector,
E = Emitter, TAB = Collector
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
BVCES IC= 250 mA, VGE = 0 V 6 0 0 V
VGE(th) IC= 750 mA, VCE = VGE 3.5 6.5 V
ICES VCE = 0.8 • VCES TJ = 25°C 200 mA
VGE = 0 V TJ = 125°C1mA
IGES VCE = 0 V, VGE = ± 20 V ± 100 nA
VCE(sat) IC= IC90, VGE = 15 V 1.8 2.3 V
Preliminary data
C (TAB)
GCE
TO-247 AD
IXYS reserves the right to change limits, test conditions, and dimensions.
VCES = 600V
IC25 = 16A
VCE(sat)typ = 1.8V
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© 2000 IXYS All rights reserved
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
gfs IC= I C90; VCE = 10 V, 3.3 5.0 S
Pulse test, t £ 300 ms, duty cycle £ 2 %
IC(on) VGE = 15 V, VCE = 10 V 50 A
Cies 920 pF
Coes VCE = 25 V, VGE = 0 V, f = 1 MHz 65 p F
Cres 14 pF
Qg40 nC
Qge IC = I C90, VGE = 15 V, VCE = 0.5 VCES 13 nC
Qgc 18 nC
td(on) 30 ns
tri 30 ns
td(off) 100 420 ns
tfi 310 470 ns
Eoff 1.9 2.9 mJ
td(on) 30 ns
tri 30 ns
Eon 0.12 mJ
td(off) 150 ns
tfi 510 ns
Eoff 3.0 mJ
RthJC 1.25 K/W
Inductive load, TJ = 25°C
IC = 16A, VGE = 15 V, L = 300 mH
VCE = 0.8 VCES, RG = 22 W
Switching times may increase for VCE
(Clamp) > 0.8 • VCES, higher TJ or
increased RG
Inductive load, TJ = 125°C
IC = 16 A, VGE = 15 V, L = 300 mH
VCE = 0.8 VCES, RG = 22 W
Switching times may increase for VCE
(Clamp) > 0.8 • VCES, higher TJ or
increased RG
IXSH 16N60U1
Reverse Diode (FRED) Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol Test Conditions min. typ. max.
VFIF = IC90, VGE = 0 V, 1.75 V
Pulse test, t £ 300 ms, duty cycle d £ 2 %
IRM IF = IC90, VGE = 0 V, -diF/dt = 64 A/ms 2.5 A
trr VR = 360 V TJ =100°C 165 ns
IF = 1 A; -di/dt = 50 A/ms; VR = 30 V TJ =25°C3550ns
RthJC 2.5 K/W
TO-247 AD (IXSH) Outline
Dim. Millimeter Inches
Min. Max. Min. Max.
A 19.81 20.32 0.780 0.800
B 20.80 21.46 0.819 0.845
C 15.75 16.26 0.610 0.640
D 3.55 3.65 0.140 0.144
E 4.32 5.49 0.170 0.216
F 5.4 6.2 0.212 0.244
G 1.65 2.13 0.065 0.084
H - 4.5 - 0.177
J 1.0 1.4 0.040 0.055
K 10.8 11.0 0.426 0.433
L 4.7 5.3 0.185 0.209
M 0.4 0.8 0.016 0.031
N 1.5 2.49 0.087 0.102
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
