BCP55
NPN General Purpose Amplifier
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25°C unless otherwise noted
BCP55
This device is designed for general purpose medium power
amplifiers and switching circuits requiring collector currents
to 1.0 A. Sourced from Process 38. See BCP54 for characteristics.
Symbol Parameter Value Units
VCEO Collector-Em itt er Voltage 60 V
VCBO Col lec tor-Base Volt age 60 V
VEBO E mitter-Base Volt age 5.0 V
ICColl ector Cur rent - Cont inuous 1.5 A
TJ, Tstg Operati ng and Storage Juncti on Temperature Range -55 to +150 °C
Symbol Characteristic Max Units
BCP55
PDTot al Device Dissipation
Derate above 25°C1.5
12 W
mW/°C
RθJA Thermal Resistance, Junct ion to Ambient 83.3 °C/W
1997 Fairchild Semiconductor Corporation
BC
C
SOT-223
E
BCP55
NPN General Purpose Amplifier
(continued)
Electrical Characteristics TA = 25°C unless otherwise noted
OFF CHARACTERISTICS
Symb ol Parameter Test Conditions Min Max Units
V(BR)CEO Collec tor-Em itt er Br eakdown
Voltage IC = 10 mA, IB = 0 60 V
V(BR)CBO Coll ector-Base Breakdown Vol tage IC = 100 µA, IE = 0 60 V
V(BR)EBO Emitter -Bas e Breakdow n Voltage IE = 10 µA, I C = 0 5.0 V
ICBO Collect o r -Cutoff Curr en t VCB = 30 V, IE = 0
VCB = 30 V, IE = 0, TA = 125°C100
10 nA
µA
IEBO Em itte r-C u toff Cur ren t VEB = 5.0 V, IC = 0 10 µA
ON CHARACTERISTICS
hFE DC Current Gain IC = 5.0 mA, VCE = 2. 0 V
IC = 150 mA, VCE = 2.0 V
IC = 500 mA, VCE = 2.0 V
25
40
25 250
VCE(sat)Colle ct or -Emitter S aturat ion Voltage IC = 500 mA , IB = 50 m A 0.5 V
VBE(on)Base-Emitter On Voltage IC = 500 mA, VCE = 2.0 V 1. 0 V
TRADEMARKS
ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
E2CMOSTM
FACT™
FACT Quiet Series™
FAST
FASTr™
GTO™
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As used herein:
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failure to perform when properly used in accordance
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reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
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PRODUCT ST A TUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information
Preliminary
No Identification Needed
Obsolete
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Formative or
In Design
First Production
Full Production
Not In Production
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OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
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SuperSOT™-8
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VCX™
HiSeC™
ISOPLANAR™
MICROWIRE™
POP™
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QFET™
QS™
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SuperSOT™-3
SuperSOT™-6
Rev. E
