AP11N50I RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Low On-resistance D Simple Drive Requirement Fast Switching Characteristic BVDSS 500V RDS(ON) 0.62 ID G 11A S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. G D TO-220CFM(I) S The TO-220CFM isolation package is widely preferred for commercial-industrial through hole applications. Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 500 V VGS Gate-Source Voltage +30 V ID@TC=25 Continuous Drain Current, VGS @ 10V 11 A ID@TC=100 Continuous Drain Current, VGS @ 10V 5.6 A 40 A 40 W 50 mJ 1 IDM Pulsed Drain Current PD@TC=25 Total Power Dissipation 2 EAS Single Pulse Avalanche Energy TSTG Storage Temperature Range -55 to 150 TJ Operating Junction Temperature Range -55 to 150 Thermal Data Symbol Parameter Rthj-c Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice Value Units 3.2 /W 65 /W 1 201008112 AP11N50I Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=1mA 500 - - V RDS(ON) Static Drain-Source On-Resistance3 VGS=10V, ID=6A - - 0.62 VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 2 - 4 V gfs Forward Transconductance VDS=10V, ID=6A - 9 - S IDSS Drain-Source Leakage Current VDS=400V, VGS=0V - - 100 uA IGSS Gate-Source Leakage VGS=+30V, VDS=0V - - +100 nA ID=6A - 43 69 nC 3 Qg Total Gate Charge Qgs Gate-Source Charge VDS=400V - 8 - nC Qgd Gate-Drain ("Miller") Charge VGS=10V - 20 - nC VDD=250V - 36 - ns 3 td(on) Turn-on Delay Time tr Rise Time ID=6A - 53 - ns td(off) Turn-off Delay Time RG=50,VGS=10V - 230 - ns tf Fall Time RD=42 - 60 - ns Ciss Input Capacitance VGS=0V - 1680 2600 pF Coss Output Capacitance VDS=25V - 160 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 15 - pF Min. Typ. IS=6A, VGS=0V - - 1.5 V IS=6A, VGS=0V - 350 - ns dI/dt=100A/s - 5 - uC Source-Drain Diode Symbol VSD Parameter 3 Forward On Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge 3 Test Conditions Max. Units Notes: 1.Pulse width limited by Max junction temperature. 2.Starting Tj=25oC , VDD=50V , L=1mH , RG=25 3.Pulse test THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 2 AP11N50I 12 20 o 12 8 5.0V T C =150 C 10 ID , Drain Current (A) 10 V 7.0 V 6.0 V 16 ID , Drain Current (A) 10V 7.0 V 6.0 V 5.0V o T C =25 C 8 6 V G = 4.5V 4 4 V G = 4.5 V 2 0 0 0.0 4.0 8.0 12.0 16.0 20.0 24.0 0.0 4.0 12.0 16.0 20.0 24.0 28.0 V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 2.8 1.2 I D =6A V G =10V 2.4 1.1 Normalized RDS(ON) Normalized BVDSS (V) 8.0 V DS , Drain-to-Source Voltage (V) 1 2.0 1.6 1.2 0.9 0.8 0.8 0.4 -50 0 50 100 -50 150 o 0 50 100 150 T j , Junction Temperature ( o C) T j , Junction Temperature ( C) Fig 3. Normalized BVDSS v.s. Junction Fig 4. Normalized On-Resistance v.s. Junction Temperature Temperature 1.5 8 1.3 Normalized VGS(th) (V) 10 T j =25 o C T j =150 o C IS(A) 6 4 1.1 0.9 0.7 2 0.5 0 0 0.2 0.4 0.6 0.8 1 V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.2 -50 0 50 100 150 T j , Junction Temperature ( o C ) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3 AP11N50I 10 I D =6A V DS =400V 2400 8 C (pF) VGS , Gate to Source Voltage (V) f=1.0MHz 3200 12 6 C iss 1600 4 800 2 0 0 0 10 20 30 40 50 1 60 5 Q G , Total Gate Charge (nC) 9 13 17 21 25 C oss C rss 29 V DS ,Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 1000 1 100us Operation in this area limited by RDS(ON) ID (A) 10 1ms 1 10ms 100ms 1s DC 0.1 T C =25 o C Single Pulse 0.01 Normalized Thermal Response (Rthjc) Duty factor = 0.5 100 0.2 0.1 0.1 0.05 PDM t T 0.02 Duty Factor = t/T Peak Tj = PDM x Rthjc + T C 0.01 Single Pulse 0.01 0.1 1 10 100 1000 0.0001 0.001 V DS ,Drain-to-Source Voltage (V) Fig 9. Maximum Safe Operating Area 0.01 0.1 1 10 t , Pulse Width (s) Fig 10. Effective Transient Thermal Impedance VG VDS 90% QG 10V QGS QGD 10% VGS td(on) tr td(off)tf Fig 11. Switching Time Waveform Charge Q Fig 12. Gate Charge Waveform 4