Advanced Power N-CHANNEL ENHANCEMENT MODE
Electronics Corp. POWER MOSFET
▼ Low On-resistance BVDSS 500V
▼ Simple Drive Requirement RDS(ON) 0.62Ω
▼ Fast Switching Characteristic ID11A
Description
Absolute Maximum Ratings
Symbol Units
VDS V
VGS V
ID@TC=25℃A
ID@TC=100℃A
IDM A
PD@TC=25℃W
EAS Single Pulse Avalanche Energy2mJ
TSTG ℃
TJ℃
Symbol Value Units
Rthj-c Maximum Thermal Resistance, Junction-case 3.2 ℃/W
Rthj-a Maximum Thermal Resistance, Junction-ambient 65 ℃/W
Data and specifications subject to change without notice
AP11N50I
RoHS-compliant Product
-55 to 150
Parameter Rating
Drain-Source Voltage 500
Gate-Source Voltage +30
Continuous Drain Current, VGS @ 10V 11
Operating Junction Temperature Range -55 to 150
50
Continuous Drain Current, VGS @ 10V 5.6
Pulsed Drain Current140
Storage Temperature Range
Total Power Dissipation 40
201008112
Thermal Data
Parameter
1
G
D
S
A
dvanced Power MOSFETs from APEC provide the designer with
the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
The TO-220CFM isolation package is widely preferred for
commercial-industrial through hole applications.
GDSTO-220CFM(I)
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Units
BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=1mA 500 - - V
RDS(ON) Static Drain-Source On-Resistance3VGS=10V, ID=6A - - 0.62 Ω
VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 2 - 4 V
gfs Forward Transconductance VDS=10V, ID=6A - 9 - S
IDSS Drain-Source Leakage Current VDS=400V, VGS=0V - - 100 uA
IGSS Gate-Source Leakage VGS=+30V, VDS=0V - - +100 nA
QgTotal Gate Charge3ID=6A - 43 69 nC
Qgs Gate-Source Charge VDS=400V - 8 - nC
Qgd Gate-Drain ("Miller") Charge VGS=10V - 20 - nC
td(on) Turn-on Delay Time3VDD=250V - 36 - ns
trRise Time ID=6A - 53 - ns
td(off) Turn-off Delay Time RG=50Ω,VGS=10V - 230 - ns
tfFall Time RD=42Ω-60-ns
Ciss Input Capacitance VGS=0V - 1680 2600 pF
Coss Output Capacitance VDS=25V - 160 - pF
Crss Reverse Transfer Capacitance f=1.0MHz - 15 - pF
Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Units
VSD Forward On Voltage3IS=6A, VGS=0V - - 1.5 V
trr Reverse Recovery Time3IS=6A, VGS=0V - 350 - ns
Qrr Reverse Recovery Charge dI/dt=100A/µs - 5 - uC
Notes:
1.Pulse width limited by Max junction temperature.
2.Starting Tj=25oC , VDD=50V , L=1mH , RG=25Ω
3.Pulse test
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP11N50I
Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics
Fig 3. Normalized BVDSS v.s. Junction Fig 4. Normalized On-Resistance
Temperature v.s. Junction Temperature
Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s.
Reverse Diode Junction Temperature
3
AP11N50I
0
2
4
6
8
10
12
0.0 4.0 8.0 12.0 16.0 20.0 24.0 28.0
VDS , Drain-to-Source Voltage (V)
ID , Drain Current (A)
TC=150oC10V
7.0V
6.0V
5.0V
VG= 4.5V
0
4
8
12
16
20
0.0 4.0 8.0 12.0 16.0 20.0 24.0
VDS , Drain-to-Source Voltage (V)
ID , Drain Current (A)
TC=25oC 10 V
7.0 V
6.0V
5.0V
VG=4.5V
0.4
0.8
1.2
1.6
2.0
2.4
2.8
-50 0 50 100 150
Tj , Junction Temperature ( oC)
Normalized RDS(ON)
I
D=6A
VG=10V
0
2
4
6
8
10
0 0.2 0.4 0.6 0.8 1 1.2
VSD , Source-to-Drain Voltage (V)
IS(A)
Tj=25oC
Tj=150oC
0.5
0.7
0.9
1.1
1.3
1.5
-50 0 50 100 150
Tj , Junction Temperature ( oC )
Normalized VGS(th) (V)
0.8
0.9
1
1.1
1.2
-50 0 50 100 150
Tj , Junction Temperature ( oC)
Normalized BVDSS (V)
Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform
4
AP11N50I
0.01
0.1
1
10
100
1000
0.1 1 10 100 1000
VDS ,Drain-to-Source Voltage (V)
ID (A)
TC=25oC
S
in
g
le Puls
e
100us
1ms
10ms
100ms
1s
DC
0.01
0.1
1
0.0001 0.001 0.01 0.1 1 10
t , Pulse Width (s)
Normalized Th e rmal Re sponse (Rthjc)
PDM
Duty Factor = t/T
Peak Tj = PDM x Rthjc + TC
t
T
0.02
0.01
0.05
0.1
0.2
Duty factor = 0.5
Single Pulse
0
2
4
6
8
10
12
0 102030405060
QG , Total Gate Charge (nC)
VGS , Gate to Sourc e Voltage ( V)
I D=6A
VDS =400V
0
800
1600
2400
3200
1 5 9 1317212529
VDS ,Drain-to-Source Voltage (V)
C (pF)
f=1.0MHz
Ciss
Coss
Crss
Q
VG
10V
QGS QGD
QG
Charge
td(on) trtd(off)
tf
VDS
VGS
10%
90%
Operation in this
area limited by
RDS(ON)
