TSOP321.. Vishay Semiconductors IR Receiver Modules for Remote Control Systems Description The TSOP321.. - series are miniaturized receivers for infrared remote control systems. PIN diode and preamplifier are assembled on lead frame, the epoxy package is designed as IR filter. The demodulated output signal can directly be decoded by a microprocessor. The main benefit is the operation with short burst transmission codes and high data rates at a supply voltage of 3 V. This component has not been qualified according to automotive specifications. 1 2 3 16672 Features Mechanical Data * Photo detector and preamplifier in one package * Internal filter for PCM frequency e3 * Improved shielding against electrical field disturbance * TTL and CMOS compatibility * Output active low * Supply voltage range: 2.7 V to 5.5 V * High immunity against ambient light * Lead (Pb)-free component * Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC Pinning: 1 = OUT, 2 = VS, 3 = GND Parts Table Part Carrier Frequency TSOP32130 30 kHz TSOP32133 33 kHz TSOP32136 36 kHz TSOP32137 36.7 kHz TSOP32138 38 kHz TSOP32140 40 kHz TSOP32156 56 kHz Special Features * Enhanced data rate of 4000 bit/s * Operation with short bursts possible ( 6 cycles/burst) Block Diagram Application Circuit 17170 2 30 k VS 1 Input AGC Band Pass Demodulator OUT Transmitter TSOPxxxx with TSALxxxx Circuit 16835 R1 = 100 VS C1 = 4.7 F OUT GND VO + VS C GND 3 PIN www.vishay.com 108 Control Circuit GND R1 and C1 recommended to suppress power supply disturbances. The output voltage should not be hold continuously at a voltage below VO = 2.0 V by the external circuit. Document Number 82229 Rev. 1.4, 06-Mar-07 TSOP321.. Vishay Semiconductors Absolute Maximum Ratings Tamb = 25 C, unless otherwise specified Parameter Supply Voltage Symbol Value Unit (Pin 2) Test condition VS - 0.3 to + 6.0 V 3 mA - 0.3 to (VS + 0.3) V Supply Current (Pin 2) IS Output Voltage (Pin 1) VO Output Current (Pin 1) IO 10 mA Tj 100 C Storage Temperature Range Tstg - 25 to + 85 C Operating Temperature Range Tamb - 25 to + 85 C Junction Temperature Power Consumption (Tamb 85 C) Ptot 30 mW Soldering Temperature t 10 s, 1 mm from case Tsd 260 C Electrical and Optical Characteristics Tamb = 25 C, unless otherwise specified Parameter Supply Current (Pin 2) Symbol Min Typ. Max Unit Ev = 0 Test condition ISD 0.7 1.2 1.5 mA Ev = 40 klx, sunlight ISH Supply Voltage VS Transmission Distance Ev = 0, test signal see fig. 1, IR diode TSAL6200, IF = 250 mA Output Voltage Low (Pin 1) IOSL = 0.5 mA, Ee = 0.7 mW/m2, test signal see fig. 1 VOSL Minimum Irradiance (30 - 40 kHz) VS = 3 V Pulse width tolerance: tpi - 5/fo < tpo < tpi + 6/fo, test signal see fig. 3 Ee min Minimum Irradiance (56 kHz) VS = 3 V Pulse width tolerance: tpi - 5/fo < tpo < tpi + 6/fo, test signal see fig. 3 Minimum Irradiance (30 - 40 kHz) 1.3 2.7 d mA 5.5 35 V m 250 mV 0.2 0.4 mW/m2 Ee min 0.3 0.5 mW/m2 VS = 5 V Pulse width tolerance: tpi - 5/fo < tpo < tpi + 6/fo, test signal see fig. 3 Ee min 0.35 0.5 mW/m2 Minimum Irradiance (56 kHz) VS = 5 V Pulse width tolerance: tpi - 5/fo < tpo < tpi + 6/fo, test signal see fig. 3 Ee min 0.45 0.6 mW/m2 Maximum Irradiance tpi - 5/fo < tpo < tpi + 6/fo, test signal see fig. 3 Ee max Directivity Angle of half transmission distance Document Number 82229 Rev. 1.4, 06-Mar-07 1/2 30 W/m2 45 deg www.vishay.com 109 TSOP321.. Vishay Semiconductors Typical Characteristics Tamb = 25 C unless otherwise specified t tpi *) *) tpi T 6/fo is recommended for optimal function Output Signal VO 1) 2) VOH VOL 14337 3/f0 < td < 9/f0 tpi - 4/f 0 < tpo < tpi + 6/f0 td1 ) 0.9 0.8 0.6 0.5 Toff 0.4 0.3 0.2 = 950 nm, optical test signal, fig. 3 0.1 0.0 0.1 Figure 1. Output Function 1.0 10.0 100.0 1000.0 10000.0 E e - Irradiance (mW/m2) Figure 4. Output Pulse Diagram 1.2 0.35 0.30 E e min /E e - Rel. Responsivity t po - Output Pulse Width (ms) Ton 0.7 16910 t tpo2 ) Ton ,Toff - Output Pulse Width (ms) 1.0 Optical Test Signal (IR diode TSAL6200, IF = 0.4 A, N = 6 pulses, f = f0, T = 10 ms) Ee Output Pulse 0.25 0.20 0.15 Input Burst Duration 0.10 = 950 nm, optical test signal, fig.1 0.05 0.00 0.1 1.0 10.0 0.8 0.6 0.4 f = f0 5 % f (3 dB) = f0/7 0.2 0.0 0.7 100.0 1000.0 10000.0 0.9 1.1 f/f0 - Relative Frequency 16926 Ee - Irradiance (mW/m) 16907 1.0 Figure 2. Pulse Length and Sensitivity in Dark Ambient 1.3 Figure 5. Frequency Dependence of Responsivity Optical Test Signal 600 s t 600 s T = 60 ms VO 94 8134 Output Signal, (see fig. 4) VOH VOL Ton Toff Figure 3. Output Function www.vishay.com 110 t Ee min - Threshold Irradiance (mW/m2 ) 4.0 Ee 3.5 3.0 Correlation with ambient light sources: 10 W/m2 1.4 klx (Std.illum.A, T= 2855 K) 10 W/m2 8.2 klx (Daylight, T = 5900 K) 2.5 2.0 1.5 Ambient, = 950 nm 1.0 0.5 0.0 0.01 16911 0.10 1.00 10.00 100.00 E - Ambient DC Irradiance (W/m 2) Figure 6. Sensitivity in Bright Ambient Document Number 82229 Rev. 1.4, 06-Mar-07 TSOP321.. 16912 2.0 f = fo 1.5 f = 10 kHz 1.0 f = 1 kHz 0.5 f = 100 Hz 0.0 0.1 1.0 10.0 100.0 1000.0 VsRMS - AC Voltage on DC Supply Voltage (mV) Figure 7. Sensitivity vs. Supply Voltage Disturbances Ee min - Threshold Irradiance (mW/m) Ee min- Threshold Irradiance (mW/m) Vishay Semiconductors 0.6 Sensitivity in dark ambient 0.5 0.4 0.3 0.2 0.1 0.0 - 30 - 15 0 15 30 45 60 75 16918 Tamb - Ambient Temperature (C) 90 Figure 10. Sensitivity vs. Ambient Temperature S ( ) rel - Relative Spectral Sensitivity E e min - Threshold Irradiance (mW/m) 1.2 2.0 f(E) = f0 1.6 1.2 0.8 0.4 0.0 0.0 0.4 0.8 1.2 2.0 1.6 E - Field Strength of Disturbance (kV/m) 94 8147 Figure 8. Sensitivity vs. Electric Field Disturbances 1.0 0.8 0.6 0.4 0.2 0.0 750 850 950 1050 1150 - Wavelength (nm) 16919 Figure 11. Relative Spectral Sensitivity vs. Wavelength 0 1.0 10 20 30 Max. Envelope Duty Cycle 0.9 0.8 0.7 40 0.6 1.0 0.5 0.9 50 0.8 60 0.4 0.3 f = 38 kHz, Ee = 2 0.2 mW/m2 70 0.7 80 0.1 0.0 0 16914 20 40 60 80 100 120 Burst Length (number of cycles/burst) Figure 9. Max. Envelope Duty Cycle vs. Burstlength Document Number 82229 Rev. 1.4, 06-Mar-07 0.6 96 12223p2 0.4 0.2 0 0.2 0.4 0.6 drel - Relative Transmission Distance Figure 12. Directivity www.vishay.com 111 TSOP321.. Vishay Semiconductors 1.0 E e min - Sensitivity (mW/m 2 ) 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 17185 0.0 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 VS - Supply Voltage (V) Figure 13. Sensitivity vs. Supply Voltage Suitable Data Format www.vishay.com 112 * Continuous signal at 38 kHz or at any other frequency * Signals from fluorescent lamps with electronic ballast (an example of the signal modulation is in the figure below). IR Signal The circuit of the TSOP321.. is designed so that unexpected output pulses due to noise or disturbance signals are avoided. A bandpass filter, an integrator stage and an automatic gain control are used to suppress such disturbances. The distinguishing mark between data signal and disturbance signal are carrier frequency, burst length and duty cycle. The data signal should fulfill the following conditions: * Carrier frequency should be close to center frequency of the bandpass (e.g. 38 kHz). * Burst length should be 6 cycles/burst or longer. * After each burst which is between 6 cycles and 70 cycles a gap time of at least 10 cycles is necessary. * For each burst which is longer than 1.8 ms a corresponding gap time is necessary at some time in the data stream. This gap time should have at least same length as the burst. * Up to 2200 short bursts per second can be received continuously. Some examples for suitable data format are: NEC Code, Toshiba Micom Format, Sharp Code, RC5 Code, RC6 Code, RCMM Code, R-2000 Code, RECS-80 Code. When a disturbance signal is applied to the TSOP321.. it can still receive the data signal. However the sensitivity is reduced to that level that no unexpected pulses will occur. Some examples for such disturbance signals which are suppressed by the TSOP321.. are: * DC light (e.g. from tungsten bulb or sunlight) IR Signal from fluorescent lamp with low modulation 0 16920 5 10 15 20 Time (ms) Figure 14. IR Signal from Fluorescent Lamp with low Modulation Document Number 82229 Rev. 1.4, 06-Mar-07 TSOP321.. Vishay Semiconductors Package Dimensions in millimeters 13655 Document Number 82229 Rev. 1.4, 06-Mar-07 www.vishay.com 113 TSOP321.. Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany www.vishay.com 114 Document Number 82229 Rev. 1.4, 06-Mar-07 Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1