IRG8P60N120KDPbF
IRG8P60N120KD-EPbF
1 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback October 30, 2014
Base part number Package Type Standard Pack Orderable Part Number
Form Quantity
IRG8P60N120KDPbF TO-247AC Tube 25 IRG8P60N120KDPbF
IRG8P60N120KD-EPbF TO-247AD Tube 25 IRG8P60N120KD-EPbF
Absolute Maximum Ratings
Parameter Max. Units
VCES Collector-to-Emitter Voltage 1200 V
IC @ TC = 25°C Continuous Collector Current (Silicon Limited) 100
IC @ TC = 100°C Continuous Collector Current 60
ICM Pulse Collector Current (see fig. 2) 120
ILM Clamped Inductive Load Current (see fig. 3) 160
IF @ TC = 25°C Diode Continuous Forward Current 50
IF @ TC = 100°C Diode Continuous Forward Current 30
IFM Diode Maximum Forward Current 160
VGE Continuous Gate-to-Emitter Voltage ±30 V
PD @ TC = 25°C Maximum Power Dissipation 420 W
PD @ TC = 100°C Maximum Power Dissipation 170
TJ Operating Junction and -40 to +150
C
TSTG Storage Temperature Range
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Mounting Torque, 6-32 or M3 Screw 10 lbf·in (1.1 N·m)
A
Thermal Resistance
Parameter Min. Typ. Max. Units
RJC (IGBT) Thermal Resistance Junction-to-Case (IGBT) ––– ––– 0.3
°C/W
RCS Thermal Resistance, Case-to-Sink (flat, greased surface) ––– 0.24 –––
RJA Thermal Resistance, Junction-to-Ambient (typical socket mount) ––– 40 –––
RJC (Diode) Thermal Resistance Junction-to-Case (Diode) ––– ––– 0.8
VCES = 1200V
IC = 60A, TC =100°C
tSC 10µs, TJ(max) = 150°C
VCE(ON) typ. = 1.7V @ IC = 40A
Applications
• Industrial Motor Drive
• UPS
• Solar Inverters
• Welding
G C E
Gate Collector Emitter
G C E
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
IRG8P60N120KDPbF
TO‐247AC
E
G
n-channel
C
IRG8P60N120KD‐EPbF
TO‐247AD
G
C E
Features
Benchmark Low VCE(ON) High Efficiency in a Motor Drive Applications
10μs Short Circuit SOA Increases margin for short circuit protection scheme
Positive VCE(ON) Temperature Coefficient Excellent Current Sharing in Parallel Operation
Square RBSOA and high ILM- rating Rugged Transient Performance
Lead-Free, RoHS compliant Environmentally friendly
Benefits
IRG8P60N120KDPbF/IRG8P60N120KD-EPbF
2 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback October 30, 2014
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)CES Collector-to-Emitter Breakdown Voltage 1200 — — V VGE = 0V, IC = 250µA
V(BR)CES/TJ Temperature Coeff. of Breakdown Voltage — 1.0 — V/°C VGE = 0V, IC = 5.0mA (25°C-150°C)
VCE(on) Collector-to-Emitter Saturation Voltage — 1.7 2.0 V IC = 40A, VGE = 15V, TJ = 25°C
— 2.1 — IC = 40A, VGE = 15V, TJ = 150°C
VGE(th) Gate Threshold Voltage 5.0 — 6.5 V VCE = VGE, IC = 1.6mA
VGE(th)/TJ Threshold Voltage Temperature Coeff. — -16 — mV/°C VCE = VGE, IC = 1.6mA (25°C-150°C)
gfe Forward Transconductance — 22 — S VCE = 50V, IC = 40A, PW = 20µs
ICES Collector-to-Emitter Leakage Current — 1.0 35 µA VGE = 0V, VCE = 1200V
— 1.2 — VGE = 0V, VCE = 1200V, TJ = 150°C
IGES Gate-to-Emitter Leakage Current — — ±400 nA VGE = ±30V
VF — 2.3 2.9 V IF = 40A
— 2.5 — IF = 40A, TJ = 150°C
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max Units Conditions
Qg Total Gate Charge (turn-on) — 230 345
nC
IC = 40A
Qge Gate-to-Emitter Charge (turn-on) — 15 25 VGE = 15V
Qgc Gate-to-Collector Charge (turn-on) — 140 210 VCC = 600V
Eon Turn-On Switching Loss — 2.8 —
mJ IC = 40A, VCC = 600V, VGE=15V
RG = 5.0, TJ = 25°C
Energy losses include tail & diode
reverse recovery
Eoff Turn-Off Switching Loss — 2.3 —
Etotal Total Switching Loss — 5.1 —
td(on) Turn-On delay time — 40 —
ns
tr Rise time — 30 —
td(off) Turn-Off delay time — 240 —
tf Fall time — 110 —
Eon Turn-On Switching Loss — 4.4 —
mJIC = 40A, VCC = 600V, VGE=15V
RG = 5.0, TJ = 150°C
Energy losses include tail & diode
reverse recovery
Eoff Turn-Off Switching Loss — 4.2 —
Etotal Total Switching Loss — 8.6 —
td(on) Turn-On delay time — 40 —
ns
tr Rise time — 30 —
td(off) Turn-Off delay time — 310 —
tf Fall time — 110 —
Cies Input Capacitance — 3700 — VGE = 0V
Coes Output Capacitance — 215 — pF VCC = 30V
Cres Reverse Transfer Capacitance — 120 — f = 1.0Mhz
RBSOA Reverse Bias Safe Operating Area
TJ = 150°C, IC = 160A
FULL SQUARE VCC = 960V, Vp ≤ 1200V
VGE = +20V to 0V
SCSOA Short Circuit Safe Operating Area 10— — µs TJ = 150°C,VCC = 600V, Vp ≤ 1200V
VGE = +15V to 0V
Erec Reverse Recovery Energy of the Diode — 1.8 — mJ TJ = 150°C
trr Diode Reverse Recovery Time — 210 — ns VCC = 600V, IF = 40A
Irr Peak Reverse Recovery Current — 21 — A VGE = 15V, Rg = 5.0
Diode Forward Voltage Drop
mA
Notes:
V
CC = 80% (VCES), VGE = 20V.
R
is measured at TJ of approximately 90°C.
Refer to AN-1086 for guidelines for measuring V(BR)CES safely.
Maximum limits are based on statistical sample size characterization.
Pulse width limited by max. junction temperature.
Values influenced by parasitic L and C in measurement.
IRG8P60N120KDPbF/IRG8P60N120KD-EPbF
3 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback October 30, 2014
0.1 110 100
f , Frequency ( kHz )
0
20
40
60
80
100
Load Current ( A )
For both:
Duty cycle : 50%
Tj = 150°C
Tcase = 100°C
Gate drive as specified
Power Dissipation = 167W
I
Square Wave:
V
CC
Diode as specified
10 100 1000 10000
VCE (V)
1
10
100
1000
IC (A)
1 10 100 1000 10000
VCE (V)
0.1
1
10
100
1000
IC (A)
10µsec
100µsec
Tc = 25°C
Tj = 150°C
Single Pulse
DC
1msec
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
Fig. 2 - Forward SOA
TC = 25°C; TJ ≤ 150°C; VGE = 15V
0 2 4 6 8 10
VCE (V)
0.1
1
10
100
1000
ICE (A)
Tc = -40°C
Tc = 25°C
Tc = 150°C
Fig. 5 - Typ. IGBT Saturation Voltage
VGE = 15V; tp = 20µs
Fig. 3 - Reverse Bias SOA
TJ = 150°C; VGE = 20V
0 2 4 6 8 10
VCE (V)
0.1
1.0
10
100
1000
ICE (A)
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
Fig. 4 - Typ. IGBT Output Characteristics
TJ = 25°C; tp = 20µs
IRG8P60N120KDPbF/IRG8P60N120KD-EPbF
4 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback October 30, 2014
0 50 100 150 200 250
Q G, Total Gate Charge (nC)
0
2
4
6
8
10
12
14
16
VGE
, Gate-to-Emitter Voltage (V)
VCES
= 600V
VCES
= 400V
Fig. 7 - Typical Gate Charge vs. VGE
ICE = 40A
020 40 60 80
IC (A)
1
10
100
1000
Swiching Time (ns)
tR
tdON
tF
tdOFF
Fig. 11 - Typ. Switching Time vs. RG
TJ = 150°C; VCE = 600V, ICE = 40A; VGE = 15V
4 6 8 10 12 14 16 18 20
VGE (V)
0.1
1
10
100
1000
ICE (A)
TJ = -40°C
TJ = 25°C
TJ = 150°C
5 7 9 11 13 15 17 19 21 23 25 27
Rg ()
0
2
4
6
8
Energy (mJ)
EON @ Tj = 150°C
EOFF @ Tj = 150°C
ERR @ Tj = 150°C
EON @ Tj = 25°C
EOFF @ Tj = 25°C
ERR @ Tj = 25°C
Fig. 10 - Typ. Energy Loss vs. RG
VCE = 600V, ICE = 40A; VGE = 15V
0 1020304050607080
IC (A)
0
4
8
12
16
Energy (mJ)
EOFF @ Tj = 150°C
EON @ Tj = 150°C
ERR @ Tj = 150°C
EOFF @ Tj = 25°C
EON @ Tj = 25°C
ERR @ Tj = 25°C
Fig. 8 - Typ. Energy Loss vs. IC
VCE = 600V, RG = 5.0; VGE = 15V
Fig. 6 - Typ. Transfer Characteristics
VCE = 50V; tp = 20µs
36912 15 18 21 24 27
RG ()
10
100
1000
Swiching Time (ns)
tR
tdON
tF
tdOFF
Fig. 9 - Typ. Switching Time vs. IC
TJ = 150°C; VCE = 600V, RG = 5.0; VGE = 15V
IRG8P60N120KDPbF/IRG8P60N120KD-EPbF
5 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback October 30, 2014
Fig. 12 - Typ. IRR vs. di/dt Fig. 13 - Typ. Diode ERR vs. IF
TJ = 150°C
Fig. 14 - Typ. Diode Forward Voltage Drop
Characteristics
200 400 600 800 1000 1200 1400
diF /dt (A/µs)
21
22
23
24
25
IRR (A)
VCC = 600V
Tj = 150°C
VGE = 15V
IF = 40A
RG = 27
RG =
RG = 10
RG = 5
0.0 1.0 2.0 3.0 4.0 5.0 6.0
VF (V)
0.1
1
10
100
1000
IF (A)
-40°C
25°C
150°C
20 30 40 50 60 70 80
IF (A)
0
500
1000
1500
2000
2500
3000
3500
4000
Energy (µJ)
RG = 5.0
RG = 10
RG = 22
RG = 27
IRG8P60N120KDPbF/IRG8P60N120KD-EPbF
6 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback October 30, 2014
Fig. 15- Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)
Fig. 16 - Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)
1E-006 1E-005 0.0001 0.001 0.01 0.1 110
t1 , Rectangular Pulse Duration (sec)
0.0001
0.001
0.01
0.1
1
10
Thermal Response ( Z
thJC )
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
J
J
1
1
2
2
3
3
R
1
R
1
R
2
R
2
R
3
R
3
Ci= iRi
Ci= iRi
C
C
4
4
R
4
R
4
Ri (°C/W) i (sec)
0.036277 0.000132
0.245235 0.000597
0.294572 0.012360
0.233626 0.098387
1E-006 1E-005 0.0001 0.001 0.01 0.1 1
t1 , Rectangular Pulse Duration (sec)
0.0001
0.001
0.01
0.1
1
Thermal Response ( Z
thJC )
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE ) Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
J
J
1
1
2
2
3
3
R
1
R
1
R
2
R
2
R
3
R
3
Ci= iRi
Ci= iRi
C
C
4
4
R
4
R
4
Ri (°C/W) i (sec)
0.004527 0.000014
0.079980 0.000178
0.134306 0.004032
0.079980 0.019255
IRG8P60N120KDPbF/IRG8P60N120KD-EPbF
7 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback October 30, 2014
Fig.C.T.1 - Gate Charge Circuit (turn-off) Fig.C.T.2 - RBSOA Circuit
Fig.C.T.3 - S.C. SOA Circuit Fig.C.T.4 - Switching Loss Circuit
(Board Stray Inductance 180nH)
Fig.C.T.5 - BVCES Filter Circuit
0
1K
VCC
DUT
L
L
Rg
80 V
DUT VCC
+
-
DC
4X
DUT
VCC
R
SH
L
Rg
VCC
DUT /
DRIVER
diode clamp /
DUT
-5V
G force
C sense
100K
DUT
0.0075µF
D1 22K
E force
C force
E sense
IRG8P60N120KDPbF/IRG8P60N120KD-EPbF
9 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback October 30, 2014
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
TO-247AC Package Outline
Dimensions are shown in millimeters (inches)
YEAR 1 = 2001
DATE CODE
PART NUMBER
INTERNATIONAL
LOGO
RECTIFIER
ASSEMBLY
56 57
IRFPE30
135H
LINE H
indicates "Lead-Free" WEEK 35
LOT CODE
IN THE ASSEMBLY LINE "H"
ASSEMBLED ON WW 35, 2001
Notes: This part marking information applies to devices produced after 02/26/2001
Note: "P" in assembly line position
EXAMPLE:
WITH ASSEMBLY
THIS IS AN IRFPE30
LOT CODE 5657
TO-247AC Part Marking Information
TO-247AC package is not recommended for Surface Mount Application.
IRG8P60N120KDPbF/IRG8P60N120KD-EPbF
10 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback October 30, 2014
TO-247AD Package Outline
Dimensions are shown in millimeters (inches)
TO-247AD Part Marking Information
ASSEM BLY YEAR 0 = 2000
ASSEM BLED ON WW 35, 2000
IN TH E ASSEM BLY LINE "H"
EXAM PLE: THIS IS AN IRGP30B120KD-E
LOT CO DE 5657
WITH ASSEMBLY PART NUMBER
DATE CODE
IN T E R N A TIO N A L
R E C T IF IE R
LO G O
035H
5 6 5 7
WEEK 35
LIN E H
LOT CODE
N o te : "P " in a s s e m b ly lin e p o s itio n
indicates "Lead-Free"
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
TO-247AD package is not recommended for Surface Mount Application.
IRG8P60N120KDPbF/IRG8P60N120KD-EPbF
11 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback October 30, 2014
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visit http://www.irf.com/whoto-call/
Qualification Information†
Industrial
(per JEDEC JESD47F) ††
Moisture Sensitivity Level
TO-247AC N/A
TO-247AD N/A
RoHS Compliant Yes
Qualification Level
† Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability/
†† Applicable version of JEDEC standard at the time of product release.
