DB3X313N Silicon epitaxial planar type For small current rectification Unit: mm Features Low forward voltage VF and small reverse current IR Low terminal capacitance Ct Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL: Level 1 compliant) Marking Symbol: 4N Basic Part Number Dual DB2J313 (Common Cathode) Packaging DB3X313N0L Embossed type (Thermo-compression sealing): 3 000 pcs / reel (standard) Absolute Maximum Ratings Ta = 25C Parameter Reverse voltage Repetitive peak reverse voltage Single Forward current (Average) Single Unit VR 30 V VRRM 30 V 200 Single 300 Junction temperature 3: Cathode-1 Cathode-2 Panasonic JEITA Code Mini3-G3-B SC-59A TO-236AA/SOT-23 3 mA 220 1.0 IFSM Double *1 1: Anode-1 2: Anode-2 mA 130 IFM Double *1 Non-repetitive peak reverse surge voltage *2 Rating IF(AV) Double *1 Peak forward current Symbol A 0.7 Tj 125 C Operating ambient temperature Topr -40 to +85 C Storage temperature Tstg -55 to +125 C 1 2 Note) *1: Value of each diode in double diodes used. *2: 50 Hz sine wave 1 cycle (Non-repetitive peak current) Electrical Characteristics Ta = 25C3C Parameter Symbol Conditions Min Typ Max Unit 0.55 V 50 mA Forward voltage VF IF = 200 mA Reverse current IR VR = 30 V Terminal capacitance Ct VR = 10 V, f = 1 MHz 3.8 pF Reverse recovery time *1 trr IF = IR =100 mA, Irr = 0.1 x IR , RL = 100 1.5 ns Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes. 2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment. 3. Absolute frequency of input and output is 1 GHz *1: trr measurement circuit Input Pulse Bias Application Unit (N-50BU) tp tr 10% A Pulse Generator (PG-10N) Rs = 50 Publication date: May 2013 VR 90% tp = 2 s tr = 0.35 ns = 0.05 Wave Form Analyzer (SAS-8130) Ri = 50 Ver. CED Output Pulse t IF trr t Irr = 0.1 x IR IF = 100 mA IR = 100 mA RL = 100 1 DB3X313N DB3X313N_ IF-VF IR VR 10-2 Ta = 125C Pulse test Reverse current IR (A) Forward current IF (A) 10-4 10-2 25C 10-5 100C 10-3 10-6 85C -40C 10-7 25C 10-4 0 0.2 20 15 10 5 10-8 -40C 10-5 Ta = 25C 100C 85C 10-3 Ta = 125C Ct VR 25 Terminal capacitance Ct (pF) 1 10-1 DB3X313N_Ct-VR DB3X313N_ IR-VR IF VF 0.4 Forward voltage VF (V) 0.6 10-9 0 10 20 Reverse voltage VR (V) Ver. CED 30 0 0 10 20 30 Reverse voltage VR (V) 2 DB3X313N Mini3-G3-B Unit: mm Land Pattern (Reference) (Unit: mm) Ver. CED 3 Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. 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