Ver. CEDPublication date: May 2013 1
DB3X313N
Silicon epitaxial planar type
For small current rectication
Features
Low forward voltage VF and small reverse current IR
Low terminal capacitance Ct
Halogen-free / RoHS compliant
(EU RoHS / UL-94 V-0 / MSL: Level 1 compliant)
Marking Symbol: 4N
Basic Part Number
Dual DB2J313 (Common Cathode)
Packaging
DB3X313N0L
Embossed type (Thermo-compression sealing): 3
000 pcs / reel (standard)
Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Reverse voltage VR30 V
Repetitive peak reverse voltage VRRM 30 V
Forward current (Average) Single IF(AV)
200 mA
Double *1130
Peak forward current Single IFM
300 mA
Double *1220
Non-repetitive peak reverse
surge voltage *2
Single IFSM
1.0 A
Double *10.7
Junction temperature Tj125 °C
Operating ambient temperature Topr 40 to +85 °C
Storage temperature Tstg 55 to +125 °C
Note) *1: Value of each diode in double diodes used.
*2: 50 Hz sine wave 1 cycle (Non-repetitive peak current)
Electrical Characteristics Ta = 25°C±3°C
Parameter Symbol Conditions Min Typ Max Unit
Forward voltage VFIF = 200 mA 0.55 V
Reverse current IRVR = 30 V 50 mA
Terminal capacitance CtVR = 10 V, f = 1 MHz 3.8 pF
Reverse recovery time *1trr
IF = IR =100 mA, Irr = 0.1 × IR , RL = 100
1.5 ns
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage
of current from the operating equipment.
3. Absolute frequency of input and output is 1 GHz
*1: trr measurement circuit
Bias Application Unit (N-50BU)
90%
Pulse Generator
(PG-10N)
Rs = 50
Wave Form Analyzer
(SAS-8130)
Ri = 50
tp = 2 µs
tr = 0.35 ns
δ = 0.05
IF = 100 mA
IR = 100 mA
RL = 100
10%
trtp
trr
VR
IF
t
t
A
Input Pulse Output Pulse
Irr = 0.1 × IR
Unit: mm
1: Anode-1
2: Anode-2
3: Cathode-1
Cathode-2
Panasonic Mini3-G3-B
JEITA SC-59A
Code TO-236AA/SOT-23
1 2
3
Ver. CED
DB3X313N
2
IF VF IR VR Ct VR
0 0.60.40.2
105
103
104
101
102
1
DB3X313N_ IF-VF
Forward current IF (A)
Forward voltage VF (V)
85°C
100°C
25°C
40°C
Ta = 125°C
Pulse test
109
108
0 20 3010
107
106
105
104
103
102
DB3X313N_ IR-VR
Reverse current IR (A)
Reverse voltage VR (V)
100°C
85°C
25°C
40°C
Ta = 125°C
00 3010 20
25
20
15
10
5
Terminal capacitance Ct (pF)
Reverse voltage VR (V)
DB3X313N_Ct-VR
Ta = 25°C
Ver. CED
DB3X313N
3
Land Pattern (Reference) (Unit: mm)
Mini3-G3-B Unit: mm
Request for your special attention and precautions
in using the technical information and semiconductors described in this book
(1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the
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(2) The technical information described in this book is intended only to show the main characteristics and application circuit
examples of the products. No license is granted in and to any intellectual property right or other right owned by
Panasonic Corporation or any other company. Therefore, no responsibility is assumed by our company as to the
infringement upon any such right owned by any other company which may arise as a result of the use of technical
information de-scribed in this book.
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communications equipment, measuring instruments and household appliances), or for specific applications as expressly
stated in this book.
Please consult with our sales staff in advance for information on the following applications, moreover please exchange
documents separately on terms of use etc.: Special applications (such as for in-vehicle equipment, airplanes, aerospace,
automotive equipment, traffic signaling equipment, combustion equipment, medical equipment and safety devices) in
which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly
jeopardize life or harm the human body.
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responsible for any damage incurred as a result of or in connection with your using the products described in this book
for any special application.
(4) The products and product specifications described in this book are subject to change without notice for modification
and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-
to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements.
(5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating
conditions (operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed
the range of absolute maximum rating on the transient state, such as power-on, power-off and mode-switching. Other-
wise, we will not be liable for any defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down
and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design,
arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages,
for example, by using the products.
(6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors
(ESD, EOS, thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. We do
not guarantee quality for disassembled products or the product re-mounted after removing from the mounting board.
When using products for which damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed
time since first opening the packages.
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request from the resale destination, please understand that customers will bear the burden.
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No.010618