NTMFS4C08N Power MOSFET 30 V, 52 A, Single N-Channel, SO-8 FL Features * * * * Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant Applications www.onsemi.com V(BR)DSS * CPU Power Delivery * DC-DC Converters RDS(ON) MAX ID MAX 5.8 mW @ 10 V 30 V 52 A 8.5 mW @ 4.5 V MAXIMUM RATINGS (TJ = 25C unless otherwise stated) Parameter Symbol Value Unit Drain-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGS 20 V ID 16.4 A Continuous Drain Current RqJA (Note 1) TA = 25C Power Dissipation RqJA (Note 1) TA = 25C PD 2.51 W Continuous Drain Current RqJA 10 s (Note 1) TA = 25C ID 25.3 A Power Dissipation RqJA 10 s (Note 1) TA = 25C Continuous Drain Current RqJA (Note 2) TA = 80C TA = 25C G (4) 12.3 TA = 80C Steady State PD 6.0 9.0 6.8 0.76 Continuous Drain Current RqJC (Note 1) TC = 25C ID 52 Power Dissipation RqJC (Note 1) TC = 25C PD 25.5 W Pulsed Drain Current TA = 25C, tp = 10 ms IDM 144 A Pulsed Source Current (Body Diode) TA = 25C, tp = 10 ms ISM 560 A IDmax 80 A TJ, TSTG -55 to +150 C IS 23 A Drain to Source DV/DT dV/dt 7.0 V/ns Single Pulse Drain-to-Source Avalanche Energy (TJ = 25C, VGS = 10 V, IL = 29 Apk, L = 0.1 mH, RGS = 25 W) (Note 3) EAS 42 mJ TL 260 C TC =80C Lead Temperature for Soldering Purposes (1/8 from case for 10 s) S SO-8 FLAT LEAD S CASE 488AA S STYLE 1 G A PD Source Current (Body Diode) MARKING DIAGRAMS W TA = 25C Operating Junction and Storage Temperature N-CHANNEL MOSFET D ID TA = 80C TA = 25C S (1,2,3) 19.0 Power Dissipation RqJA (Note 2) Current Limited by Package D (5-8) W A 39 1 D 4C08N AYWZZ D D A Y W ZZ = Assembly Location = Year = Work Week = Lot Traceabililty ORDERING INFORMATION Device Package Shipping NTMFS4C08NT1G SO-8 FL (Pb-Free) 1500 / Tape & Reel NTMFS4C08NT3G SO-8 FL (Pb-Free) 5000 / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Surface-mounted on FR4 board using 1 sq-in pad, 1 oz Cu. 2. Surface-mounted on FR4 board using the minimum recommended pad size. 3. This is the absolute maximum rating. Parts are 100% tested at TJ = 25C, VGS = 10 V, IL = 21 Apk, EAS = 22 mJ. (c) Semiconductor Components Industries, LLC, 2015 November, 2015 - Rev. 6 1 Publication Order Number: NTMFS4C08N/D NTMFS4C08N THERMAL RESISTANCE MAXIMUM RATINGS Symbol Value Junction-to-Case (Drain) Parameter RqJC 4.9 Junction-to-Ambient - Steady State (Note 4) RqJA 49.8 Junction-to-Ambient - Steady State (Note 5) RqJA 164.6 Junction-to-Ambient - (t 10 s) (Note 4) RqJA 21.0 Unit C/W 4. Surface-mounted on FR4 board using 1 sq-in pad, 1 oz Cu. 5. Surface-mounted on FR4 board using the minimum recommended pad size. ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise specified) Parameter Symbol Test Condition Min Drain-to-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 30 Drain-to-Source Breakdown Voltage (transient) V(BR)DSSt VGS = 0 V, ID(aval) = 8.4 A, Tcase = 25C, ttransient = 100 ns 34 Drain-to-Source Breakdown Voltage Temperature Coefficient V(BR)DSS/ TJ Typ Max Unit OFF CHARACTERISTICS Zero Gate Voltage Drain Current Gate-to-Source Leakage Current IDSS V V 13.8 VGS = 0 V, VDS = 24 V mV/C TJ = 25C 1.0 TJ = 125C 10 IGSS VDS = 0 V, VGS = 20 V VGS(TH) VGS = VDS, ID = 250 mA mA 100 nA 2.1 V ON CHARACTERISTICS (Note 6) Gate Threshold Voltage Negative Threshold Temperature Coefficient Drain-to-Source On Resistance 1.3 VGS(TH)/TJ RDS(on) 4.9 mV/C VGS = 10 V ID = 18 A 4.6 5.8 VGS = 4.5 V ID = 30 A 6.8 8.5 Forward Transconductance gFS VDS = 1.5 V, ID = 15 A Gate Resistance RG TA = 25C 42 0.3 mW S 1.0 2.0 1670 W CHARGES AND CAPACITANCES Input Capacitance CISS 1113 Output Capacitance COSS 702 Reverse Transfer Capacitance CRSS VGS = 0 V, f = 1 MHz, VDS = 15 V pF 39 Capacitance Ratio CRSS/CISS Total Gate Charge QG(TOT) 8.4 Threshold Gate Charge QG(TH) 1.8 Gate-to-Source Charge QGS Gate-to-Drain Charge QGD 3.3 Gate Plateau Voltage VGP 3.4 V 18.2 nC Total Gate Charge VGS = 0 V, VDS = 15 V, f = 1 MHz VGS = 4.5 V, VDS = 15 V; ID = 30 A QG(TOT) VGS = 10 V, VDS = 15 V; ID = 30 A 0.035 3.5 nC SWITCHING CHARACTERISTICS (Note 7) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time td(ON) tr td(OFF) 9.0 VGS = 4.5 V, VDS = 15 V, ID = 15 A, RG = 3.0 W tf 33 15 4.0 6. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 7. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2 ns NTMFS4C08N ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise specified) Parameter Symbol Test Condition Min Typ Max Unit SWITCHING CHARACTERISTICS (Note 7) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time td(ON) tr td(OFF) 7.0 VGS = 10 V, VDS = 15 V, ID = 15 A, RG = 3.0 W tf 26 ns 19 3.0 DRAIN-SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time VSD TJ = 25C 0.79 TJ = 125C 0.66 tRR Charge Time ta Discharge Time tb Reverse Recovery Charge VGS = 0 V, IS = 10 A 1.1 V 28.3 VGS = 0 V, dIS/dt = 100 A/ms, IS = 30 A QRR 14.5 13.8 15.3 6. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 7. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 3 ns nC NTMFS4C08N TYPICAL CHARACTERISTICS 100 4.2 V TJ = 25C 80 4.0 V 70 3.8 V 60 3.6 V 50 3.4 V 40 30 3.2 V 20 3.0 V 10 0 1.0 1.5 2.0 40 30 TJ = 125C 20 TJ = 25C 3.0 2.5 TJ = -55C 0 2.0 2.5 3.0 3.5 4.0 Figure 2. Transfer Characteristics ID = 30 A 0.014 0.012 0.010 0.008 0.006 0.004 0.002 4.0 5.0 6.0 7.0 8.0 9.0 VGS, GATE-TO-SOURCE VOLTAGE (V) 10 4.5 5.0 0.010 0.009 TJ = 25C 0.008 VGS = 4.5 V 0.007 0.006 0.005 VGS = 10 V 0.004 0.003 0.002 10 20 30 40 50 60 70 ID, DRAIN CURRENT (A) Figure 3. On-Resistance vs. VGS Figure 4. On-Resistance vs. Drain Current and Gate Voltage 1.7 10000 VGS = 0 V ID = 30 A VGS = 10 V IDSS, LEAKAGE (nA) RDS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) 1.5 Figure 1. On-Region Characteristics 0.016 1.5 1.0 VGS, GATE-TO-SOURCE VOLTAGE (V) 0.018 1.6 0.5 VDS, DRAIN-TO-SOURCE VOLTAGE (V) 0.020 3.0 50 0 RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) 0.5 60 10 2.8 V 0 VDS = 3 V 70 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 80 4.5 V to 10 V 90 1.4 1.3 1.2 1.1 1.0 TJ = 150C TJ = 125C 1000 TJ = 85C 100 0.9 0.8 0.7 -50 10 -25 0 25 50 75 100 125 150 5 10 15 20 25 TJ, JUNCTION TEMPERATURE (C) VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 5. On-Resistance Variation with Temperature Figure 6. Drain-to-Source Leakage Current vs. Voltage www.onsemi.com 4 30 NTMFS4C08N TYPICAL CHARACTERISTICS VGS = 0 V TJ = 25C 1600 C, CAPACITANCE (pF) VGS, GATE-TO-SOURCE VOLTAGE (V) 1800 1400 Ciss 1200 1000 Coss 800 600 400 200 Crss 0 0 5 10 15 20 25 QT 8 6 Qgd Qgs 4 TJ = 25C VDD = 15 V VGS = 10 V ID = 30 A 2 0 0 30 2 4 6 8 10 12 14 16 18 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Qg, TOTAL GATE CHARGE (nC) Figure 7. Capacitance Variation Figure 8. Gate-to-Source and Drain-to-Source Voltage vs. Total Charge 20 20 1000 VDD = 15 V ID = 15 A VGS = 10 V 18 IS, SOURCE CURRENT (A) t, TIME (ns) 10 tr tf 100 td(off) td(on) 10 VGS = 0 V 16 14 12 10 8 6 TJ = 125C 4 TJ = 25C 2 1 1 10 0.8 0.9 1.0 Figure 10. Diode Forward Voltage vs. Current 10 ms 100 ms 1 ms 10 ms 0 V < VGS < 10 V Single Pulse TC = 25C RDS(on) Limit Thermal Limit Package Limit 0.01 0.1 dc 1 10 EAS, SINGLE PULSE DRAIN-TO- SOURCE AVALANCHE ENERGY (mJ) ID, DRAIN CURRENT (A) 0.7 Figure 9. Resistive Switching Time Variation vs. Gate Resistance 10 0.01 0.6 VSD, SOURCE-TO-DRAIN VOLTAGE (V) 100 0.1 0.5 RG, GATE RESISTANCE (W) 1000 1 0 0.4 100 22 ID = 21 A 20 18 16 14 12 10 8 6 4 2 0 25 100 50 75 100 125 VDS, DRAIN-TO-SOURCE VOLTAGE (V) TJ, STARTING JUNCTION TEMPERATURE (C) Figure 11. Maximum Rated Forward Biased Safe Operating Area Figure 12. Maximum Avalanche Energy vs. Starting Junction Temperature www.onsemi.com 5 150 NTMFS4C08N TYPICAL CHARACTERISTICS 100 R(t) (C/W) Duty Cycle = 50% 10 20% 10% 5% 1 2% 1% 0.1 Single Pulse 0.01 0.000001 0.00001 0.0001 0.001 0.1 0.01 1 10 100 1000 PULSE TIME (sec) Figure 13. Thermal Response 100 80 ID, DRAIN CURRENT (A) 70 GFS (S) 60 50 40 30 20 TA = 25C TA = 85C 10 10 1 1.E-08 0 0 10 20 30 40 50 60 70 1.E-07 1.E-06 1.E-05 1.E-04 1.E-03 ID (A) PULSE WIDTH (SECONDS) Figure 14. GFS vs. ID Figure 15. Avalanche Characteristics www.onsemi.com 6 NTMFS4C08N PACKAGE DIMENSIONS DFN5 5x6, 1.27P (SO-8FL) CASE 488AA ISSUE M 2X NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH PROTRUSIONS OR GATE BURRS. 0.20 C D A 2 B D1 2X 0.20 C 4X E1 q E 2 c 1 2 3 DIM A A1 b c D D1 D2 E E1 E2 e G K L L1 M q A1 4 TOP VIEW C SEATING PLANE DETAIL A 0.10 C A 0.10 C SIDE VIEW DETAIL A STYLE 1: PIN 1. SOURCE 2. SOURCE 3. SOURCE 4. GATE 5. DRAIN RECOMMENDED SOLDERING FOOTPRINT* 2X 0.495 0.10 b C A B 0.05 c MILLIMETERS MIN NOM MAX 0.90 1.00 1.10 0.00 --- 0.05 0.33 0.41 0.51 0.23 0.28 0.33 5.15 5.00 5.30 4.70 4.90 5.10 3.80 4.00 4.20 6.00 6.15 6.30 5.70 5.90 6.10 3.45 3.65 3.85 1.27 BSC 0.51 0.575 0.71 1.20 1.35 1.50 0.51 0.575 0.71 0.125 REF 3.00 3.40 3.80 0_ --- 12 _ 4.560 2X 8X 1.530 e/2 e L 1 4 3.200 4.530 K E2 PIN 5 (EXPOSED PAD) L1 1.330 2X M 0.905 1 0.965 G D2 4X BOTTOM VIEW 1.000 4X 0.750 1.270 PITCH DIMENSIONS: MILLIMETERS *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and the are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. 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