VHB1-28T NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI VHB1-28T is Designed for Class C, 28 V High Band Applications up to 175 MHz. PACKAGE STYLE TO-39 FEATURES: B C 45 OA * Class C Operation * PG = 13 dB at 1.0 W/175 MHz * OmnigoldTM Metalization System OD E F MAXIMUM RATINGS IC 0.4 A VCBO 55 V VCEO 30 V MINIMUM DIM VEBO 3.5 V PDISS 5 W @ TC = 25 C TJ -65 C to +200 C TSTG -65 C to +200 C JC 35 C/W IC = 5.0 mA BVCER IC = 5.0 mA BVCBO BVEBO .029 / 0.740 .045 / 1.140 C .028 / 0.720 .034 / 0.860 D .335 / 8.510 .370 / 9.370 E .305 / 7.750 .335 / 8.500 F .240 / 6.100 .260 / 6.600 .500 / 12.700 .016 / 0.407 H .020 / 0.508 ORDER CODE: ASI10720 MINIMUM TYPICAL MAXIMUM UNITS 30 V 55 V IC = 0.1 mA 55 V IE = 0.1 mA 3.5 V ICEX VC = 55 V ICEO VE = 28 V hFE B TC = 25 C BVCEO (S) VCE inches / mm .200 / 5.080 G NONETEST CONDITIONS SYMBOL MAXIMUM inches / mm A O CHARACTERISTICS H G RBE = 10 VBE = -1.5 V IC = 100 mA IB = 20 mA VCE = 5.0 V IC = 50 mA IC = 360 mA COB VCB = 28 V PG C VCE = 28 V 10 5.0 f = 175 MHz A 20 A 1.0 V 200 f = 1.0 MHz POUT = 1.0 W 100 3.0 13 60 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE * NORTH HOLLYWOOD, CA 91605 * (818) 982-1200 * FAX (818) 765-3004 Specifications are subject to change without notice. --pF dB % REV. B 1/1