A D V A N C E D S E M I C O N D U C T O R, I N C. REV. B
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
Specif i cations are subjec t to change without notice.
CHARACTERISTICS TC = 25 °C
SYMBOL NONETEST CONDITIO NS MINIMUM TYPICAL MAXIMUM UNITS
BVCEO IC = 5.0 mA 30 V
BVCER IC = 5.0 mA RBE = 10 Ω 55 V
BVCBO IC = 0.1 mA 55 V
BVEBO IE = 0.1 mA 3.5 V
ICEX VC = 55 V VBE = -1.5 V 100 µ
µµ
µA
ICEO VE = 28 V 20 µ
µµ
µA
VCE(S) IC = 100 mA IB = 20 mA 1.0 V
hFE VCE = 5.0 V IC = 50 mA
IC = 360 mA 10
5.0 200
---
COB VCB = 28 V f = 1.0 MHz 3.0 pF
PG
η
ηη
ηC VCE = 28 V POUT = 1.0 W f = 175 MHz 13
60 dB
%
NPN SILICON RF POWER TRANSISTOR
VHB1-28T
DESCRIPTION:
The ASI VHB1-28T is Designed for
Class C, 28 V High Band Applicat ions
up to 175 MHz.
FEATURES:
• Class C Operation
• PG = 13 dB at 1.0 W/175 MHz
• Omnigold™ Metalization System
MAXIMUM RATINGS
IC 0.4 A
VCBO 55 V
VCEO 30 V
VEBO 3.5 V
PDISS 5 W @ TC = 25 °OC
TJ -65 °C to +200 °C
TSTG -65 °C to +200 °C
θ
θθ
θJC 35 °C/W
PACKAGE STYLE TO-39
ORDER CODE: ASI10720
Ø A
Ø D
45° CB
F
E
GH
MINIMUM
inches / mm
.029 / 0.740
.335 / 8.510
.200 / 5.080
.028 / 0.720
.305 / 7.750
.240 / 6.100
B
C
D
E
F
G
A
MAXIMUM
.034 / 0.860
.335 / 8.500
.260 / 6.600
.370 / 9.370
inches / mm
.045 / 1.140
.500 / 12.700
H.016 / 0.407 .020 / 0.508
DIM
