BA892-02L Silicon RF Switching Diode Preliminary data For band switching in TV/VTR tuners 2 up to 2GHz Very low forward resistance 1 (very low insertion loss) small capacitance Ultra small leadless package 1 2 EHA07001 Type BA892-02L Marking AA Pin Configuration 1=C 2=A Package TSLP-2 - Maximum Ratings Parameter Symbol Diode reverse voltage VR 35 V Forward current IF 100 mA Operating temperature range Top -55 ... 125 C Storage temperature Tstg -55 ... 150 Value Unit Thermal Resistance Parameter Symbol Junction - soldering point1) RthJS 1For Value Unit tbd K/W calculation of RthJA please refer to Application Note Thermal Resistance 1 Jul-04-2001 BA892-02L Electrical Characteristics at TA = 25C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. IR - - 20 nA VF - - 1 V DC Characteristics Reverse current VR = 20 V Forward voltage IF = 100 mA Electrical Characteristics Parameter Symbol Values min. typ. Unit max. AC Characteristics Diode capacitance- pF CT VR = 1 V, f = 1 MHz 0.65 0.92 1.3 VR = 3 V, f = 1 MHz 0.6 0.85 1.1 Forward resistance rf IF = 3 mA, f = 100 MHz - 0.45 0.7 IF = 10 mA, f = 100 MHz - 0.36 0.5 1/gP - 100 - k rr - 120 - ns CC - 0.05 - pF LS - 0.6 - nH Reverse resistance VR = 1 V, f = 100 MHz Charge carrier life time IF = 10 mA, IR = 6 mA, IR = 3 mA Case capacitance f = 1 MHz Series inductance 2 Jul-04-2001 BA892-02L Diode capacitance CT = (VR ) Forward resistance rf = (IF ) f = 1MHz f = 100MHz CT EHD07009 2.0 pF EHD07010 10 1 rf 1.6 1.2 10 0 0.8 0.4 0.0 0 10 20 V 10 -1 30 10 -1 10 0 10 1 mA 10 2 F VR Forward current IF = (VF) TA = 25C 10 3 mA IF 10 2 10 1 10 0 10 -1 10 -2 0.5 0.6 0.7 0.8 0.9 1 V 1.2 VF 3 Jul-04-2001