Jul-04-2001
1
BA892-02L
1
2
Silicon RF Switching Diode
Preliminary data
For band switching in TV/VTR tuners
up to 2GHz
Very low forward resistance
(very low insertion loss)
small capacitance
Ultra small leadless package
12
EHA07001
Type Marking Pin Configuration Package
BA892-02L AA 1 = C 2 = A - TSLP-2
Maximum Ratings
Parameter Symbol Value Unit
Diode reverse voltage VR35 V
Forward current IF100 mA
Operating temperature range Top -55 ... 125 °C
Storage temperature Tstg -55 ... 150
Thermal Resistance
Parameter Symbol Value Unit
Junction - soldering point1) RthJS tbd K/W
1For calculation of RthJA please refer to Application Note Thermal Resistance
Jul-04-2001
2
BA892-02L
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
DC Characteristics
Reverse current
VR = 20 V IR- - 20 nA
Forward voltage
IF = 100 mA VF- - 1 V
Electrical Characteristics
Parameter Symbol Values Unit
min. typ. max.
AC Characteristics
Diode capacitance-
VR = 1 V, f = 1 MHz
VR = 3 V, f = 1 MHz
CT
0.65
0.6
0.92
0.85
1.3
1.1
pF
Forward resistance
IF = 3 mA, f = 100 MHz
IF = 10 mA, f = 100 MHz
rf
-
-
0.45
0.36
0.7
0.5
Reverse resistance
VR = 1 V, f = 100 MHz 1/gP- 100 - k
Charge carrier life time
IF = 10 mA, IR = 6 mA, IR = 3 mA
rr - 120 - ns
Case capacitance
f = 1 MHz CC- 0.05 - pF
Series inductance LS- 0.6 - nH
Jul-04-2001
3
BA892-02L
Diode capacitance CT =
(VR)
f = 1MHz
0
0.0
EHD07009
C
T
R
V
10 20 V 30
0.4
0.8
1.2
1.6
pF
2.0
Forward resistance rf =
(IF)
f = 100MHz
10
EHD07010
r
f
F
Ι
-1 0
10
1
10
2
10mA
-1
10
Ω
10
1
10
0
Forward current IF =
(VF)
TA = 25°C
0.5 0.6 0.7 0.8 0.9 1 V1.2
VF
-2
10
-1
10
0
10
1
10
2
10
3
10
mA
I
F
