BC327 thru BC328 Small Signal Transistors (PNP) Features TO-226AA (TO-92) * PNP Silicon Epitaxial Planar Transistors for switching and amplifier applications. Especially suitable for AF-driver stages and low-power output stages. * These types are also available subdivided into three groups, -16, -25, and -40, according to their DC current gain. As complementary types, the NPN transistors BC327 and BC338 are recommended. * On special request, these transistors are also manufactured in the pin configuration TO-18. 0.142 (3.6) min. 0.492 (12.5) 0.181 (4.6) 0.181 (4.6) Mechanical Data max. 0.022 (0.55) 0.098 (2.5) Case: TO-92 Plastic Package Weight: approx. 0.18g Packaging Codes/Options: E6/Bulk - 5K per container E7/4K per Ammo tape Dimensions in inches and (millimeters) Bottom View Maximum Ratings & Thermal Characteristics Parameters Ratings at 25C ambient temperature unless otherwise specified. Symbols Value Units Collector-Emitter Voltage BC327 BC328 -VCES 50 30 V Collector-Emitter Voltage BC327 BC328 -VCEO 45 25 V -VEBO 5 V -IC 800 mA -ICM 1 A -IB 100 Emitter-Base Voltage Collector Current Peak Collector Current Base Current Power Dissipation at Tamb = 25C Thermal Resistance Junction to Ambient Air Ptot RJA mA (1) mW (1) C/W 625 200 Junction Temperature Tj 150 C Storage Temperature Range TS - 65 to +150 C Notes: (1) Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case. 2/28/00 BC327 thru BC328 Small Signal Transistors (PNP) Electrical Characteristics (T Parameter J = 25C unless otherwise noted) Symbol Current Gain Group DC Current Gain Current Gain Group Collector-Emitter Cutoff Current Collector Saturation Voltage Base-Emitter Voltage -16 -25 -40 -16 -25 -40 BC327 BC328 BC327 BC328 Test Condition Min Typ Max -VCE = 1 V, -IC = 100 mA 100 160 250 160 250 400 250 400 630 -VCE = 1 V, -IC = 300 mA 60 100 170 130 200 320 -- -- -- -VCE = 45 V -VCE = 25 V -VCE = 45 V, Tamb = 125C -VCE = 25 V, Tamb = 125C -- -- -- -- 2 2 -- -- 100 100 10 10 nA nA A A -IC -- -- 0.7 V -- -- 1.2 V hFE -ICES -VCEsat -VBE = 500 mA, -IB = 50 mA -VCE = 1 V, -IC = 300 mA Unit -- Collector-Emitter Breakdown Voltage BC327 -V(BR)CEO BC328 -IC = 10 mA 45 25 -- -- -- -- V Collector-Emitter Breakdown Voltage BC327 -V(BR)CES BC328 -IC = 0.1 mA 50 30 -- -- -- -- V 5 -- -- V Emitter-Base Breakdown Voltage Gain-Bandwidth Product Collector-Base Capacitance -V(BR)EBO fT CCBO -IE = 0.1 mA -VCE = 5 V, -IC = 10 mA f = 50 MHz -- 100 -- MHz -VCB = 10 V, f = 1 MHz -- 12 -- pF BC327 thru BC328 Small Signal Transistors (PNP) Ratings and Characteristic Curves BC327 thru BC328 Small Signal Transistors (PNP) Ratings and Characteristic Curves BC327 thru BC328 Small Signal Transistors (PNP) Ratings and Characteristic Curves