IRL3202S
Repetitive rating; pulse width limited by
max. junction temperature. I
SD £ 29A, di/dt £ 63A/µs, VDD £ V(BR)DSS,
TJ £ 150°C
Notes:
Starting TJ = 25°C, L = 0.64mH
RG = 25W, IAS = 29A. Pulse width £ 300µs; duty cycle £ 2%.
S
D
G
Parameter Min. Typ. Max. Units Conditions
ISContinuous Source Current MOSFET symbol
(Body Diode) ––– ––– showing the
ISM Pulsed Source Current integral reverse
(Body Diode)
––– ––– p-n junction diode.
VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 29A, VGS = 0V
trr Reverse Recovery Time ––– 68 100 n s TJ = 25°C, IF = 29A
Qrr Reverse Recovery Charge ––– 130 190 nC di/dt = 100A/µs
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Source-Drain Ratings and Characteristics
48
190 A
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 20 ––– ––– V VGS = 0V, ID = 250µA
DV(BR)DSS/DTJBreakdown Voltage Temp. Coefficient ––– 0.029 ––– V/°C Reference to 25°C, ID = 1mA
––– ––– 0.019 VGS = 4.5V, ID = 29A
––– ––– 0.016 WVGS = 7.0V, ID = 29A
VGS(th) Gate Threshold Voltage 0.70 ––– ––– V VDS = VGS, ID = 250µA
gfs Forward Transconductance 28 ––– ––– S VDS = 16V, ID = 29A
––– ––– 25 µA VDS = 20V, VGS = 0V
––– ––– 250 VDS = 10V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 100 nA VGS = 10V
Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -10V
QgTotal Gate Charge ––– ––– 43 ID = 29A
Qgs Gate-to-Source Charge ––– ––– 12 nC VDS = 16V
Qgd Gate-to-Drain ("Miller") Charge ––– ––– 13 VGS = 4.5V, See Fig. 6
td(on) Turn-On Delay Time ––– 9.8 ––– VDD = 10V
trRise Time ––– 100 ––– ns ID = 29A
td(off) Turn-Off Delay Time ––– 63 ––– RG = 9.5W, VGS = 4.5V
tfFall Time ––– 82 ––– RD = 0.3W,
Between lead,
and center of die contact
Ciss Input Capacitance ––– 2000 ––– VGS = 0V
Coss Output Capacitance ––– 800 ––– pF VDS = 15V
Crss Reverse Transfer Capacitance ––– 290 ––– ƒ = 1.0MHz, See Fig. 5
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
RDS(on) Static Drain-to-Source On-Resistance
IGSS
nH
LSInternal Source Inductance ––– 7.5 –––
IDSS Drain-to-Source Leakage Current
Uses IRL3202 data and test conditions
** When mounted on FR-4 board using minimum recommended footprint.
For recommended footprint and soldering techniques refer to application note #AN-994.